JP6921180B2 - デュアル側面接触キャパシタを形成するための裏面シリサイド化の利用 - Google Patents

デュアル側面接触キャパシタを形成するための裏面シリサイド化の利用 Download PDF

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JP6921180B2
JP6921180B2 JP2019505480A JP2019505480A JP6921180B2 JP 6921180 B2 JP6921180 B2 JP 6921180B2 JP 2019505480 A JP2019505480 A JP 2019505480A JP 2019505480 A JP2019505480 A JP 2019505480A JP 6921180 B2 JP6921180 B2 JP 6921180B2
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layer
metal coating
capacitor
coupled
circuit structure
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Japanese (ja)
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JP2019525476A5 (https=
JP2019525476A (ja
Inventor
シナン・ゴクテペリ
プラメン・ヴァッシレフ・コレフ
マイケル・アンドリュー・ステューバー
リチャード・ハモンド
シチュン・グ
スティーヴ・ファネリ
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2019505480A 2016-08-18 2017-07-14 デュアル側面接触キャパシタを形成するための裏面シリサイド化の利用 Expired - Fee Related JP6921180B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/240,952 2016-08-18
US15/240,952 US9847293B1 (en) 2016-08-18 2016-08-18 Utilization of backside silicidation to form dual side contacted capacitor
PCT/US2017/042213 WO2018034756A1 (en) 2016-08-18 2017-07-14 Utilization of backside silicidation to form dual side contacted capacitor

Publications (3)

Publication Number Publication Date
JP2019525476A JP2019525476A (ja) 2019-09-05
JP2019525476A5 JP2019525476A5 (https=) 2020-08-13
JP6921180B2 true JP6921180B2 (ja) 2021-08-18

Family

ID=59416818

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JP2019505480A Expired - Fee Related JP6921180B2 (ja) 2016-08-18 2017-07-14 デュアル側面接触キャパシタを形成するための裏面シリサイド化の利用

Country Status (7)

Country Link
US (2) US9847293B1 (https=)
EP (1) EP3501045A1 (https=)
JP (1) JP6921180B2 (https=)
KR (1) KR20190039714A (https=)
CN (1) CN109690788A (https=)
BR (1) BR112019002750B1 (https=)
WO (1) WO2018034756A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9847293B1 (en) 2016-08-18 2017-12-19 Qualcomm Incorporated Utilization of backside silicidation to form dual side contacted capacitor
US12575111B2 (en) * 2022-06-30 2026-03-10 Intel Corporation Back-end-of-line 2D memory cell

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JP3326267B2 (ja) 1994-03-01 2002-09-17 三菱電機株式会社 半導体装置およびその製造方法
US5541442A (en) * 1994-08-31 1996-07-30 International Business Machines Corporation Integrated compact capacitor-resistor/inductor configuration
JPH08222701A (ja) * 1995-02-17 1996-08-30 Asahi Chem Ind Co Ltd キャパシタを有する半導体装置およびその製造方法
US6320237B1 (en) 1999-11-08 2001-11-20 International Business Machines Corporation Decoupling capacitor structure
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
DE10210044A1 (de) * 2002-03-07 2003-09-18 Philips Intellectual Property Integrierte monolithische SOI-Schaltung mit Kondensator
SE527487C2 (sv) 2004-03-02 2006-03-21 Infineon Technologies Ag En metod för framställning av en kondensator och en monolitiskt integrerad krets innefattande en sådan kondensator
JP2005260163A (ja) 2004-03-15 2005-09-22 Fujitsu Ltd 容量素子及びその製造方法並びに半導体装置及びその製造方法
US20050280087A1 (en) * 2004-06-16 2005-12-22 Cree Microwave, Inc. Laterally diffused MOS transistor having source capacitor and gate shield
US7064043B1 (en) 2004-12-09 2006-06-20 Texas Instruments Incorporated Wafer bonded MOS decoupling capacitor
US20060170044A1 (en) 2005-01-31 2006-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. One-transistor random access memory technology integrated with silicon-on-insulator process
US7345334B2 (en) 2005-04-27 2008-03-18 International Business Machines Corporation Integrated circuit (IC) with high-Q on-chip discrete capacitors
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US20090057742A1 (en) 2007-08-30 2009-03-05 Sungjae Lee Cmos varactor
CN101952961B (zh) * 2008-02-25 2013-01-30 飞兆半导体公司 包括集成薄膜电感器的微模块及其制造方法
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Also Published As

Publication number Publication date
US20180076137A1 (en) 2018-03-15
US9847293B1 (en) 2017-12-19
BR112019002750B1 (pt) 2023-04-11
WO2018034756A1 (en) 2018-02-22
EP3501045A1 (en) 2019-06-26
CN109690788A (zh) 2019-04-26
BR112019002750A2 (pt) 2019-05-14
KR20190039714A (ko) 2019-04-15
US10290579B2 (en) 2019-05-14
JP2019525476A (ja) 2019-09-05

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