CN109690788A - 利用背面硅化形成双面接触电容器 - Google Patents

利用背面硅化形成双面接触电容器 Download PDF

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Publication number
CN109690788A
CN109690788A CN201780049975.5A CN201780049975A CN109690788A CN 109690788 A CN109690788 A CN 109690788A CN 201780049975 A CN201780049975 A CN 201780049975A CN 109690788 A CN109690788 A CN 109690788A
Authority
CN
China
Prior art keywords
layer
metallization
backside
capacitor
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201780049975.5A
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English (en)
Chinese (zh)
Inventor
S·格科特佩里
P·V·科勒夫
M·A·斯图贝
R·哈蒙德
古仕群
S·费恩利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN109690788A publication Critical patent/CN109690788A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201780049975.5A 2016-08-18 2017-07-14 利用背面硅化形成双面接触电容器 Pending CN109690788A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/240,952 2016-08-18
US15/240,952 US9847293B1 (en) 2016-08-18 2016-08-18 Utilization of backside silicidation to form dual side contacted capacitor
PCT/US2017/042213 WO2018034756A1 (en) 2016-08-18 2017-07-14 Utilization of backside silicidation to form dual side contacted capacitor

Publications (1)

Publication Number Publication Date
CN109690788A true CN109690788A (zh) 2019-04-26

Family

ID=59416818

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780049975.5A Pending CN109690788A (zh) 2016-08-18 2017-07-14 利用背面硅化形成双面接触电容器

Country Status (7)

Country Link
US (2) US9847293B1 (https=)
EP (1) EP3501045A1 (https=)
JP (1) JP6921180B2 (https=)
KR (1) KR20190039714A (https=)
CN (1) CN109690788A (https=)
BR (1) BR112019002750B1 (https=)
WO (1) WO2018034756A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9847293B1 (en) 2016-08-18 2017-12-19 Qualcomm Incorporated Utilization of backside silicidation to form dual side contacted capacitor
US12575111B2 (en) * 2022-06-30 2026-03-10 Intel Corporation Back-end-of-line 2D memory cell

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4882649A (en) * 1988-03-29 1989-11-21 Texas Instruments Incorporated Nitride/oxide/nitride capacitor dielectric
US6320237B1 (en) * 1999-11-08 2001-11-20 International Business Machines Corporation Decoupling capacitor structure
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
CN109643691A (zh) * 2016-08-11 2019-04-16 高通股份有限公司 背面半导体生长

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JP3326267B2 (ja) 1994-03-01 2002-09-17 三菱電機株式会社 半導体装置およびその製造方法
US5541442A (en) * 1994-08-31 1996-07-30 International Business Machines Corporation Integrated compact capacitor-resistor/inductor configuration
JPH08222701A (ja) * 1995-02-17 1996-08-30 Asahi Chem Ind Co Ltd キャパシタを有する半導体装置およびその製造方法
DE10210044A1 (de) * 2002-03-07 2003-09-18 Philips Intellectual Property Integrierte monolithische SOI-Schaltung mit Kondensator
SE527487C2 (sv) 2004-03-02 2006-03-21 Infineon Technologies Ag En metod för framställning av en kondensator och en monolitiskt integrerad krets innefattande en sådan kondensator
JP2005260163A (ja) 2004-03-15 2005-09-22 Fujitsu Ltd 容量素子及びその製造方法並びに半導体装置及びその製造方法
US20050280087A1 (en) * 2004-06-16 2005-12-22 Cree Microwave, Inc. Laterally diffused MOS transistor having source capacitor and gate shield
US7064043B1 (en) 2004-12-09 2006-06-20 Texas Instruments Incorporated Wafer bonded MOS decoupling capacitor
US20060170044A1 (en) 2005-01-31 2006-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. One-transistor random access memory technology integrated with silicon-on-insulator process
US7345334B2 (en) 2005-04-27 2008-03-18 International Business Machines Corporation Integrated circuit (IC) with high-Q on-chip discrete capacitors
US7709313B2 (en) 2005-07-19 2010-05-04 International Business Machines Corporation High performance capacitors in planar back gates CMOS
US8013342B2 (en) * 2007-11-14 2011-09-06 International Business Machines Corporation Double-sided integrated circuit chips
US20090057742A1 (en) 2007-08-30 2009-03-05 Sungjae Lee Cmos varactor
CN101952961B (zh) * 2008-02-25 2013-01-30 飞兆半导体公司 包括集成薄膜电感器的微模块及其制造方法
US8889548B2 (en) * 2008-09-30 2014-11-18 Infineon Technologies Ag On-chip RF shields with backside redistribution lines
JP2011193191A (ja) * 2010-03-15 2011-09-29 Renesas Electronics Corp 半導体集積回路およびそれを内蔵した高周波モジュール
JP5876249B2 (ja) * 2011-08-10 2016-03-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
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US8748258B2 (en) 2011-12-12 2014-06-10 International Business Machines Corporation Method and structure for forming on-chip high quality capacitors with ETSOI transistors
US8685790B2 (en) * 2012-02-15 2014-04-01 Freescale Semiconductor, Inc. Semiconductor device package having backside contact and method for manufacturing
JP6216235B2 (ja) * 2013-05-07 2017-10-18 キヤノン株式会社 画像形成装置及びその制御方法とプログラム
US20160043108A1 (en) * 2014-08-07 2016-02-11 Silanna Semiconductor U.S.A., Inc. Semiconductor Structure with Multiple Active Layers in an SOI Wafer
KR20160034200A (ko) * 2014-09-19 2016-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9257393B1 (en) 2014-09-29 2016-02-09 Freescale Semiconductor Inc. Fan-out wafer level packages containing embedded ground plane interconnect structures and methods for the fabrication thereof
US9620463B2 (en) * 2015-02-27 2017-04-11 Qualcomm Incorporated Radio-frequency (RF) shielding in fan-out wafer level package (FOWLP)
US9847293B1 (en) 2016-08-18 2017-12-19 Qualcomm Incorporated Utilization of backside silicidation to form dual side contacted capacitor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4882649A (en) * 1988-03-29 1989-11-21 Texas Instruments Incorporated Nitride/oxide/nitride capacitor dielectric
US6320237B1 (en) * 1999-11-08 2001-11-20 International Business Machines Corporation Decoupling capacitor structure
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
CN109643691A (zh) * 2016-08-11 2019-04-16 高通股份有限公司 背面半导体生长

Also Published As

Publication number Publication date
US20180076137A1 (en) 2018-03-15
US9847293B1 (en) 2017-12-19
BR112019002750B1 (pt) 2023-04-11
WO2018034756A1 (en) 2018-02-22
EP3501045A1 (en) 2019-06-26
BR112019002750A2 (pt) 2019-05-14
KR20190039714A (ko) 2019-04-15
US10290579B2 (en) 2019-05-14
JP2019525476A (ja) 2019-09-05
JP6921180B2 (ja) 2021-08-18

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Application publication date: 20190426