KR20190039714A - 듀얼 사이드 콘택 커패시터를 형성하기 위한 백사이드 실리사이드화의 활용 - Google Patents

듀얼 사이드 콘택 커패시터를 형성하기 위한 백사이드 실리사이드화의 활용 Download PDF

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KR20190039714A
KR20190039714A KR1020197004314A KR20197004314A KR20190039714A KR 20190039714 A KR20190039714 A KR 20190039714A KR 1020197004314 A KR1020197004314 A KR 1020197004314A KR 20197004314 A KR20197004314 A KR 20197004314A KR 20190039714 A KR20190039714 A KR 20190039714A
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South Korea
Prior art keywords
layer
backside
circuit structure
integrated circuit
coupled
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KR1020197004314A
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English (en)
Korean (ko)
Inventor
시난 고크테펠리
플레이먼 바실레브 코레브
마이클 앤드류 스튜버
리처드 햄몬드
쉬쿤 구
스티브 파넬리
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퀄컴 인코포레이티드
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Ceased legal-status Critical Current

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    • H01L23/66—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H01L23/5223—
    • H01L23/5283—
    • H01L23/53209—
    • H01L27/1203—
    • H01L28/40—
    • H01L29/0649—
    • H01L29/66181—
    • H01L29/94—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H01L2223/6677—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020197004314A 2016-08-18 2017-07-14 듀얼 사이드 콘택 커패시터를 형성하기 위한 백사이드 실리사이드화의 활용 Ceased KR20190039714A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/240,952 2016-08-18
US15/240,952 US9847293B1 (en) 2016-08-18 2016-08-18 Utilization of backside silicidation to form dual side contacted capacitor
PCT/US2017/042213 WO2018034756A1 (en) 2016-08-18 2017-07-14 Utilization of backside silicidation to form dual side contacted capacitor

Publications (1)

Publication Number Publication Date
KR20190039714A true KR20190039714A (ko) 2019-04-15

Family

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Family Applications (1)

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KR1020197004314A Ceased KR20190039714A (ko) 2016-08-18 2017-07-14 듀얼 사이드 콘택 커패시터를 형성하기 위한 백사이드 실리사이드화의 활용

Country Status (7)

Country Link
US (2) US9847293B1 (https=)
EP (1) EP3501045A1 (https=)
JP (1) JP6921180B2 (https=)
KR (1) KR20190039714A (https=)
CN (1) CN109690788A (https=)
BR (1) BR112019002750B1 (https=)
WO (1) WO2018034756A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9847293B1 (en) 2016-08-18 2017-12-19 Qualcomm Incorporated Utilization of backside silicidation to form dual side contacted capacitor
US12575111B2 (en) * 2022-06-30 2026-03-10 Intel Corporation Back-end-of-line 2D memory cell

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JP3326267B2 (ja) 1994-03-01 2002-09-17 三菱電機株式会社 半導体装置およびその製造方法
US5541442A (en) * 1994-08-31 1996-07-30 International Business Machines Corporation Integrated compact capacitor-resistor/inductor configuration
JPH08222701A (ja) * 1995-02-17 1996-08-30 Asahi Chem Ind Co Ltd キャパシタを有する半導体装置およびその製造方法
US6320237B1 (en) 1999-11-08 2001-11-20 International Business Machines Corporation Decoupling capacitor structure
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
DE10210044A1 (de) * 2002-03-07 2003-09-18 Philips Intellectual Property Integrierte monolithische SOI-Schaltung mit Kondensator
SE527487C2 (sv) 2004-03-02 2006-03-21 Infineon Technologies Ag En metod för framställning av en kondensator och en monolitiskt integrerad krets innefattande en sådan kondensator
JP2005260163A (ja) 2004-03-15 2005-09-22 Fujitsu Ltd 容量素子及びその製造方法並びに半導体装置及びその製造方法
US20050280087A1 (en) * 2004-06-16 2005-12-22 Cree Microwave, Inc. Laterally diffused MOS transistor having source capacitor and gate shield
US7064043B1 (en) 2004-12-09 2006-06-20 Texas Instruments Incorporated Wafer bonded MOS decoupling capacitor
US20060170044A1 (en) 2005-01-31 2006-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. One-transistor random access memory technology integrated with silicon-on-insulator process
US7345334B2 (en) 2005-04-27 2008-03-18 International Business Machines Corporation Integrated circuit (IC) with high-Q on-chip discrete capacitors
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US8013342B2 (en) * 2007-11-14 2011-09-06 International Business Machines Corporation Double-sided integrated circuit chips
US20090057742A1 (en) 2007-08-30 2009-03-05 Sungjae Lee Cmos varactor
CN101952961B (zh) * 2008-02-25 2013-01-30 飞兆半导体公司 包括集成薄膜电感器的微模块及其制造方法
US8889548B2 (en) * 2008-09-30 2014-11-18 Infineon Technologies Ag On-chip RF shields with backside redistribution lines
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US20160043108A1 (en) * 2014-08-07 2016-02-11 Silanna Semiconductor U.S.A., Inc. Semiconductor Structure with Multiple Active Layers in an SOI Wafer
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Also Published As

Publication number Publication date
US20180076137A1 (en) 2018-03-15
US9847293B1 (en) 2017-12-19
BR112019002750B1 (pt) 2023-04-11
WO2018034756A1 (en) 2018-02-22
EP3501045A1 (en) 2019-06-26
CN109690788A (zh) 2019-04-26
BR112019002750A2 (pt) 2019-05-14
US10290579B2 (en) 2019-05-14
JP2019525476A (ja) 2019-09-05
JP6921180B2 (ja) 2021-08-18

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