JP6913569B2 - 被処理体を処理する方法 - Google Patents

被処理体を処理する方法 Download PDF

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Publication number
JP6913569B2
JP6913569B2 JP2017162600A JP2017162600A JP6913569B2 JP 6913569 B2 JP6913569 B2 JP 6913569B2 JP 2017162600 A JP2017162600 A JP 2017162600A JP 2017162600 A JP2017162600 A JP 2017162600A JP 6913569 B2 JP6913569 B2 JP 6913569B2
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Prior art keywords
film
gas
hole
etching
processing
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JP2017162600A
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JP2019041020A5 (enExample
JP2019041020A (ja
Inventor
雅弘 田端
雅弘 田端
亨 久松
亨 久松
嘉英 木原
嘉英 木原
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2017162600A priority Critical patent/JP6913569B2/ja
Priority to TW107128535A priority patent/TWI785095B/zh
Priority to TW111137161A priority patent/TWI858400B/zh
Priority to KR1020180098612A priority patent/KR102735966B1/ko
Priority to US16/111,622 priority patent/US10559472B2/en
Priority to CN201810971378.4A priority patent/CN109427561B/zh
Publication of JP2019041020A publication Critical patent/JP2019041020A/ja
Priority to US16/731,456 priority patent/US11133192B2/en
Publication of JP2019041020A5 publication Critical patent/JP2019041020A5/ja
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3344—Problems associated with etching isotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H01L21/28132—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects conducting part of electrode is difined by a sidewall spacer or a similar technique, e.g. oxidation under mask, plating

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
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TW107128535A TWI785095B (zh) 2017-08-25 2018-08-16 被處理體之處理方法
TW111137161A TWI858400B (zh) 2017-08-25 2018-08-16 電漿處理裝置
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US16/111,622 US10559472B2 (en) 2017-08-25 2018-08-24 Workpiece processing method
CN201810971378.4A CN109427561B (zh) 2017-08-25 2018-08-24 处理被处理体的方法
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JP7071175B2 (ja) * 2017-04-18 2022-05-18 東京エレクトロン株式会社 被処理体を処理する方法
JP7066565B2 (ja) * 2018-07-27 2022-05-13 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
US10950428B1 (en) * 2019-08-30 2021-03-16 Mattson Technology, Inc. Method for processing a workpiece
CN114467164A (zh) * 2019-09-12 2022-05-10 应用材料公司 排斥网和沉积方法
US11443923B2 (en) * 2019-09-25 2022-09-13 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus for fabricating a semiconductor structure and method of fabricating a semiconductor structure
JP7500332B2 (ja) * 2020-08-05 2024-06-17 キオクシア株式会社 半導体記憶装置及びその製造方法
JP2022096079A (ja) * 2020-12-17 2022-06-29 パナソニックＩｐマネジメント株式会社 素子チップの製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635335B1 (en) * 1999-06-29 2003-10-21 Micron Technology, Inc. Etching methods and apparatus and substrate assemblies produced therewith
JP4727171B2 (ja) * 2003-09-29 2011-07-20 東京エレクトロン株式会社 エッチング方法
TW201415551A (zh) * 2006-03-31 2014-04-16 Applied Materials Inc 用以改良介電薄膜之階梯覆蓋與圖案負載的方法
US7780865B2 (en) * 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US7524750B2 (en) * 2006-04-17 2009-04-28 Applied Materials, Inc. Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD
JP5082338B2 (ja) * 2006-08-25 2012-11-28 東京エレクトロン株式会社 エッチング方法及びエッチング装置
WO2009067381A1 (en) * 2007-11-21 2009-05-28 Lam Research Corporation Method of controlling etch microloading for a tungsten-containing layer
US8133797B2 (en) * 2008-05-16 2012-03-13 Novellus Systems, Inc. Protective layer to enable damage free gap fill
KR101468028B1 (ko) * 2008-06-17 2014-12-02 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
JP2010283213A (ja) * 2009-06-05 2010-12-16 Tokyo Electron Ltd 基板処理方法
US8728956B2 (en) * 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
JP2014003085A (ja) * 2012-06-15 2014-01-09 Tokyo Electron Ltd プラズマエッチング方法及びプラズマ処理装置
WO2014115600A1 (ja) * 2013-01-22 2014-07-31 ピーエスフォー ルクスコ エスエイアールエル 半導体装置の製造方法
US9378971B1 (en) * 2014-12-04 2016-06-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP6207947B2 (ja) * 2013-09-24 2017-10-04 東京エレクトロン株式会社 被処理体をプラズマ処理する方法
US9190478B2 (en) * 2013-12-22 2015-11-17 Alpha And Omega Semiconductor Incorporated Method for forming dual oxide trench gate power MOSFET using oxide filled trench
JP6151215B2 (ja) * 2014-05-15 2017-06-21 東京エレクトロン株式会社 プラズマエッチング方法
US9406522B2 (en) * 2014-07-24 2016-08-02 Applied Materials, Inc. Single platform, multiple cycle spacer deposition and etch
JP2016058590A (ja) * 2014-09-11 2016-04-21 株式会社日立ハイテクノロジーズ プラズマ処理方法
US9564342B2 (en) * 2014-09-26 2017-02-07 Tokyo Electron Limited Method for controlling etching in pitch doubling
US9425041B2 (en) * 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation
JP6559430B2 (ja) * 2015-01-30 2019-08-14 東京エレクトロン株式会社 被処理体を処理する方法
US9922839B2 (en) 2015-06-23 2018-03-20 Lam Research Corporation Low roughness EUV lithography

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US10559472B2 (en) 2020-02-11
US11133192B2 (en) 2021-09-28
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CN109427561A (zh) 2019-03-05
CN109427561B (zh) 2023-07-07
TW202305153A (zh) 2023-02-01
TWI858400B (zh) 2024-10-11
TW201920716A (zh) 2019-06-01
US20190067019A1 (en) 2019-02-28
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