JP2019041020A - 被処理体を処理する方法 - Google Patents
被処理体を処理する方法 Download PDFInfo
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- JP2019041020A JP2019041020A JP2017162600A JP2017162600A JP2019041020A JP 2019041020 A JP2019041020 A JP 2019041020A JP 2017162600 A JP2017162600 A JP 2017162600A JP 2017162600 A JP2017162600 A JP 2017162600A JP 2019041020 A JP2019041020 A JP 2019041020A
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- gas
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Abstract
Description
このように、第1シーケンスが繰り返し実行されるので、比較的に薄い膜厚の膜を第1工程において形成し第1シーケンスを繰り返し実行することによって最終的に所望とする膜厚の膜を形成することができる。これにより、ホール幅の比較的に狭いホールにおいて、第1工程によって形成される膜によってホールの開口が閉塞される事態が十分に回避され得る。
比較的にホール幅が狭く第1工程で比較的に膜厚の薄い膜が形成されたホール(第1ホールという)において第2の膜が第2工程で除去されても、この時点において、比較的にホール幅が広く第1工程で比較的に膜厚の厚い膜が形成されたホール(第2ホールという)では第2の膜の一部が残存し得る。このような状態から、第2工程におけるエッチングが更に継続して行われる場合、第1の膜のエッチング耐性が第2の膜のエッチング耐性よりも低いので、第1ホールの方が第2ホールよりも速くエッチングが進行する。従って、比較的にエッチング耐性の低い第1の膜と比較的にエッチング耐性の高い第2の膜とを用いることによって、第1ホールと第2ホールとの間のホール幅のバラツキがより効果的に低減され得る。
Claims (11)
- 被処理体を処理する方法であって、該被処理体には複数のホールが該被処理体の表面に設けられており、該方法は、
前記ホールの内面に対して膜を成膜する第1工程と、
前記膜を等方的にエッチングする第2工程と、
を含む第1シーケンスを備え、
前記第1工程は、プラズマCVD法を用いた成膜処理を含み、
前記膜は、シリコンを含有する、
方法。 - 前記第1シーケンスは、繰り返し実行される、
請求項1に記載の方法。 - 前記第2工程は、
前記被処理体が収容されたプラズマ処理装置の処理容器内に第1のガスのプラズマを生成し該第1のガスのプラズマに含まれるイオンを含む混合層を前記ホールの前記内面の原子層に等方的に形成する第3工程と、
前記第3工程の実行後に、前記処理容器内の空間をパージする第4工程と、
前記第4工程の実行後に、前記処理容器内において第2のガスのプラズマを生成し、該第2のガスのプラズマに含まれるラジカルによって前記混合層を除去する第5工程と、
前記第5工程の実行後に、前記処理容器内の空間をパージする第6工程と、
を含む第2シーケンスを繰り返し実行し前記膜を原子層ごとに除去することによって該膜を等方的にエッチングし、
前記第1のガスは、窒素を含み、
前記第2のガスは、フッ素を含み、
前記第5工程において生成される前記第2のガスのプラズマは、シリコンの窒化物を含む前記混合層を除去する前記ラジカルを含む、
請求項1または請求項2に記載の方法。 - 前記第2のガスは、NF3ガスおよびO2ガスを含む混合ガスである、
請求項3に記載の方法。 - 前記第2のガスは、NF3ガス、O2ガス、H2ガスおよびArガスを含む混合ガスである、
請求項3に記載の方法。 - 前記第2のガスは、CH3Fガス、O2ガスおよびArガスを含む混合ガスである、
請求項3に記載の方法。 - 前記膜は、第1の膜および第2の膜を備え、
前記第1工程は、
前記ホールの内面に前記第1の膜を成膜する第7工程と、
前記第1の膜上に前記第2の膜を成膜する第8工程と、
を備え、
前記第2工程において実行されるエッチングに対するエッチング耐性は、前記第1の膜の方が前記第2の膜よりも低い、
請求項1〜6の何れか一項に記載の方法。 - 前記第7工程は、
前記被処理体が収容されたプラズマ処理装置の処理容器内に第3のガスを供給する第9工程と、
前記第9工程の実行後に、前記処理容器内の空間をパージする第10工程と、
前記第10工程の実行後に、前記処理容器内で第4のガスのプラズマを生成する第11工程と、
前記第11工程の実行後に、前記処理容器内の空間をパージする第12工程と、
を含む第3シーケンスを繰り返し実行することによって前記第1の膜を成膜し、
前記第8工程は、プラズマCVDを用いて前記第2の膜を成膜し、
前記第3のガスは、アミノシラン系ガスを含み、
前記第4のガスは、酸素原子を含有するガスを含み、
前記第9工程は、前記第3のガスのプラズマを生成しない、
請求項7に記載の方法。 - 前記第3のガスは、モノアミノシランを含む、
請求項8に記載の方法。 - 前記第3のガスのアミノシラン系ガスは、1〜3個のケイ素原子を有するアミノシランを含む、
請求項8に記載の方法。 - 前記第3のガスのアミノシラン系ガスは、1〜3個のアミノ基を有するアミノシランを含む、
請求項8または請求項10に記載の方法。
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