TWI858400B - 電漿處理裝置 - Google Patents

電漿處理裝置 Download PDF

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Publication number
TWI858400B
TWI858400B TW111137161A TW111137161A TWI858400B TW I858400 B TWI858400 B TW I858400B TW 111137161 A TW111137161 A TW 111137161A TW 111137161 A TW111137161 A TW 111137161A TW I858400 B TWI858400 B TW I858400B
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Taiwan
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film
gas
plasma
hole
processing
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TW111137161A
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English (en)
Chinese (zh)
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TW202305153A (zh
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田端雅弘
久松亨
木原嘉英
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日商東京威力科創股份有限公司
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H01L21/28132—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects conducting part of electrode is difined by a sidewall spacer or a similar technique, e.g. oxidation under mask, plating

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