TWI785095B - 被處理體之處理方法 - Google Patents

被處理體之處理方法 Download PDF

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TWI785095B
TWI785095B TW107128535A TW107128535A TWI785095B TW I785095 B TWI785095 B TW I785095B TW 107128535 A TW107128535 A TW 107128535A TW 107128535 A TW107128535 A TW 107128535A TW I785095 B TWI785095 B TW I785095B
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Taiwan
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film
gas
processing
hole
plasma
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TW107128535A
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Chinese (zh)
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TW201920716A (zh
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田端雅弘
久松亨
木原嘉英
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日商東京威力科創股份有限公司
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    • H01L21/28026Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H01L21/28132Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects conducting part of electrode is difined by a sidewall spacer or a similar technique, e.g. oxidation under mask, plating

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