JP6876383B2 - 波長可変光源 - Google Patents
波長可変光源 Download PDFInfo
- Publication number
- JP6876383B2 JP6876383B2 JP2016113259A JP2016113259A JP6876383B2 JP 6876383 B2 JP6876383 B2 JP 6876383B2 JP 2016113259 A JP2016113259 A JP 2016113259A JP 2016113259 A JP2016113259 A JP 2016113259A JP 6876383 B2 JP6876383 B2 JP 6876383B2
- Authority
- JP
- Japan
- Prior art keywords
- wavelength
- output
- optical
- light source
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/101—Curved waveguide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/083—Ring lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Description
(付記1)半導体光増幅器と、前記半導体光増幅器とともに波長可変レーザを構成する共振器と、前記半導体光増幅器および前記共振器と光学的に結合され、前記波長可変レーザ内の光の一部を2つの出力光に分岐する2×2型の光分岐器と、前記光分岐器で分岐された前記2つの出力光の内、一方の出力光が入力される光強度モニタと、前記光分岐器で分岐された前記2つの出力光の内、他方の出力光が入力される波長ロッカーとを有する波長可変光源。
(付記2)前記光強度モニタに入力される出力光は、前記光分岐器で分岐された前記2つの出力光の内、前記共振器側から出力された出力光であり、前記波長ロッカーに入力される出力光は、前記光分岐器で分岐された前記2つの出力光の内、前記半導体光増幅器側から出力された出力光である付記1に記載の波長可変光源。
(付記3)前記光分岐器が、方向性結合器である付記1または付記2に記載の波長可変光源。
(付記4)前記光分岐器が、マルチモード干渉カプラである付記1または付記2に記載の波長可変光源。
(付記5)前記光分岐器が、交差導波路である付記1または付記2に記載の波長可変光源。
(付記6)前記共振器が、シリコン細線導波路で形成されている付記1乃至付記5のいずれか1に記載の波長可変光源。
(付記7)前記光強度モニタが、シリコン層上に積層したゲルマニウム層を有している付記6に記載の波長可変光源。
(付記8)少なくとも前記半導体光増幅器、前記共振器、前記光分岐器及び、前記光強度モニタがIII-V族化合物半導体によりモノリシックに形成されている付記1乃至付記5のいずれか1に記載の波長可変光源。
2 半導体光増幅器
3 共振器
4 光分岐器
5 光強度モニタ
6 波長ロッカー
10 Si導波路プラットフォーム
101 化合物半導体基板
20,201 共振器
21,211、23,25 光導波路
2110 傾斜部
22,24 リング共振器
26 ループミラー
27,28 ヒータ
29 位相調整用ヒータ
30,301 方向性結合器
31,311 結合導波路
32 2×2MMIカプラ
33,34 出力ポート
35 交差導波路
36 光導波路
40,401 SOA
41 n型InP基板
42 n型InPクラッド層
43 MQW活性層
431 傾斜導波路
432 屈曲導波路
433 直線導波路
44 p型InPクラッド層
45 p型InGaAsコンタクト層
46 FeドープInP埋込層
47 n側電極
48 p側電極
50,501 パワーモニタ
60,601 波長ロッカー
61 ハーフミラー
62,64 フォトダイオード
63 エタロンフィルタ
70,80 波長可変レーザ
71,81 半導体光増幅器
72,82 共振器
73 第1光分岐器
74 第2光分岐器
75,85 パワーモニタ
76,86 波長ロッカー
83 第1Y分岐
84 第2Y分岐
Claims (5)
- 半導体光増幅器と、
前記半導体光増幅器とともに波長可変レーザを構成する共振器と、
前記半導体光増幅器および前記共振器と光学的に結合され、前記波長可変レーザ内の光の一部を2つの出力光に分岐する2×2型の光分岐器と、
前記光分岐器で分岐された前記2つの出力光の内、一方の出力光が入力される光強度モニタと、
前記光分岐器で分岐された前記2つの出力光の内、他方の出力光が入力される波長ロッカーと
を有する波長可変光源。 - 前記光強度モニタに入力される出力光は、前記光分岐器で分岐された前記2つの出力光の内、前記共振器側から出力された出力光であり、
前記波長ロッカーに入力される出力光は、前記光分岐器で分岐された前記2つの出力光の内、前記半導体光増幅器側から出力された出力光である
請求項1に記載の波長可変光源。 - 前記光分岐器が、方向性結合器、マルチモード干渉カプラ、或いは、交差導波路のいずれかである請求項1または請求項2に記載の波長可変光源。
- 前記共振器が、シリコン細線導波路で形成されている請求項1乃至請求項3のいずれか1項に記載の波長可変光源。
- 少なくとも前記半導体光増幅器、前記共振器、前記光分岐器、及び、前記光強度モニタがIII-V族化合物半導体によりモノリシックに形成されている請求項1乃至請求項3のいずれか1項に記載の波長可変光源。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016113259A JP6876383B2 (ja) | 2016-06-07 | 2016-06-07 | 波長可変光源 |
US15/606,876 US10355448B2 (en) | 2016-06-07 | 2017-05-26 | Tunable laser source |
CN201710413621.6A CN107482475B (zh) | 2016-06-07 | 2017-06-05 | 可调激光源 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016113259A JP6876383B2 (ja) | 2016-06-07 | 2016-06-07 | 波長可変光源 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017219668A JP2017219668A (ja) | 2017-12-14 |
JP6876383B2 true JP6876383B2 (ja) | 2021-05-26 |
Family
ID=60483563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016113259A Active JP6876383B2 (ja) | 2016-06-07 | 2016-06-07 | 波長可変光源 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10355448B2 (ja) |
JP (1) | JP6876383B2 (ja) |
CN (1) | CN107482475B (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018207422A1 (ja) * | 2017-05-08 | 2018-11-15 | ソニー株式会社 | レーザ装置組立体 |
US11896373B2 (en) | 2017-05-22 | 2024-02-13 | Brolis Sensor Technology, Uab | Tunable hybrid III-V/ IV laser sensor system-on-a chip for real-time monitoring of a blood constituent concentration level |
JP6943060B2 (ja) * | 2017-08-03 | 2021-09-29 | 富士通オプティカルコンポーネンツ株式会社 | 波長可変光源、及び光モジュール |
US10530126B2 (en) * | 2017-12-27 | 2020-01-07 | Elenion Technologies, Llc | External cavity laser |
JP7162066B2 (ja) * | 2018-02-02 | 2022-10-27 | ブロリス センサー テクノロジー,ユーエイビー | 広帯域波長可変レーザー及びそのレーザーシステムの波長判定 |
JP7269185B2 (ja) | 2018-02-08 | 2023-05-08 | 古河電気工業株式会社 | 波長可変レーザおよび光モジュール |
CN108666864B (zh) * | 2018-03-26 | 2021-04-09 | 中国科学院半导体研究所 | 混合集成可调谐激光器及光子芯片 |
JP6704436B2 (ja) * | 2018-08-15 | 2020-06-03 | 沖電気工業株式会社 | 光ハイブリッド回路 |
WO2020181938A1 (zh) * | 2019-03-14 | 2020-09-17 | 青岛海信宽带多媒体技术有限公司 | 一种光模块 |
JP7436881B2 (ja) * | 2019-07-09 | 2024-02-22 | 日本電信電話株式会社 | 光合波回路 |
US11557878B2 (en) * | 2019-10-22 | 2023-01-17 | University Of Maryland, College Park | High power, narrow linewidth semiconductor laser system and method of fabrication |
WO2021080697A1 (en) * | 2019-10-23 | 2021-04-29 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Intrinsic and tunable self-modulating optical limiter via strong cavity coupling |
KR20210150225A (ko) * | 2020-06-03 | 2021-12-10 | 삼성전자주식회사 | 파장 가변 레이저 광원 및 이를 포함하는 광 조향 장치 |
US11929592B2 (en) * | 2020-09-17 | 2024-03-12 | Marvell Asia Pte Ltd. | Silicon-photonics-based semiconductor optical amplifier with N-doped active layer |
US12088060B2 (en) * | 2020-10-19 | 2024-09-10 | Intel Corporation | Multi-wavelength laser generator using ring filter |
US11804692B2 (en) | 2021-03-03 | 2023-10-31 | Marvell Asia Pte Ltd | Power monitor for silicon-photonics-based laser |
WO2022201329A1 (ja) * | 2021-03-23 | 2022-09-29 | 日本電信電話株式会社 | 半導体光集積素子 |
CN113607386B (zh) * | 2021-07-29 | 2023-05-26 | 苏州长光华芯光电技术股份有限公司 | 一种波长锁定监测系统及其工作方法 |
WO2023041171A1 (en) * | 2021-09-17 | 2023-03-23 | Huawei Technologies Co., Ltd. | Distributed feedback laser with integrated mpd |
WO2024103573A1 (zh) * | 2022-11-18 | 2024-05-23 | 青岛海信宽带多媒体技术有限公司 | 光模块 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5703710A (en) * | 1994-09-09 | 1997-12-30 | Deacon Research | Method for manipulating optical energy using poled structure |
IL134908A (en) * | 1999-03-08 | 2003-12-10 | C I Systems Ltd | Active pyrometry with emissivity extrapolation and compensation |
GB2378811A (en) | 2001-08-16 | 2003-02-19 | Bookham Technology Plc | A Laser System |
JP4402912B2 (ja) * | 2003-07-23 | 2010-01-20 | 日本電信電話株式会社 | 半導体波長可変レーザおよび波長可変レーザモジュール |
JP5029364B2 (ja) * | 2005-09-06 | 2012-09-19 | 日本電気株式会社 | 波長可変フィルタおよび波長可変レーザ |
PL1984381T3 (pl) * | 2006-01-27 | 2011-03-31 | Isis Pharmaceuticals Inc | Zmodyfikowane w pozycji 6 analogi bicykliczne kwasów nukleinowych |
JP2011003591A (ja) | 2009-06-16 | 2011-01-06 | Sumitomo Electric Ind Ltd | 波長ロッカー集積型半導体レーザ素子 |
US8467122B2 (en) * | 2011-07-13 | 2013-06-18 | Oracle America, Inc. | Hybrid laser source with ring-resonator reflector |
WO2013036955A1 (en) * | 2011-09-08 | 2013-03-14 | Skorpios Technologies, Inc. | Tunable reflectors based on multi-cavity interference |
JP2014042010A (ja) * | 2012-07-25 | 2014-03-06 | Canon Inc | 波長掃引光源の駆動方法 |
EP2773052B1 (fr) * | 2013-02-28 | 2015-07-29 | Alcatel Lucent | Emetteur-recepteur optique |
US9559487B2 (en) * | 2014-07-11 | 2017-01-31 | Acacia Communications, Inc. | Integrated high-power tunable laser with adjustable outputs |
US9837781B2 (en) * | 2014-10-24 | 2017-12-05 | Oracle International Corporation | External cavity laser with reduced optical mode-hopping |
US9653882B1 (en) * | 2016-02-09 | 2017-05-16 | Oracle America, Inc. | Wavelength control of an external cavity laser |
-
2016
- 2016-06-07 JP JP2016113259A patent/JP6876383B2/ja active Active
-
2017
- 2017-05-26 US US15/606,876 patent/US10355448B2/en active Active
- 2017-06-05 CN CN201710413621.6A patent/CN107482475B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN107482475A (zh) | 2017-12-15 |
CN107482475B (zh) | 2019-07-12 |
US20170353008A1 (en) | 2017-12-07 |
US10355448B2 (en) | 2019-07-16 |
JP2017219668A (ja) | 2017-12-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6876383B2 (ja) | 波長可変光源 | |
US9705282B2 (en) | Multi-wavelength laser light source and wavelength multiplexing communication system | |
US20170353001A1 (en) | Tunable laser | |
US9722397B2 (en) | Tunable laser and tunable laser module | |
JP5772989B2 (ja) | レーザ素子 | |
KR102162833B1 (ko) | 집적된 마하젠더 변조기를 구비한 튜너블 u-레이저 전송기 | |
US10680410B2 (en) | External cavity laser | |
JP5206187B2 (ja) | 光半導体装置 | |
JP5877727B2 (ja) | 半導体光変調素子及び光モジュール | |
KR101405419B1 (ko) | 레이저 모듈 | |
US8643943B2 (en) | Tunable laser source using intracavity laser light outcoupling and module containing the same | |
JP4983910B2 (ja) | 光半導体素子 | |
JP2017098362A (ja) | 光集積素子及び光通信装置 | |
JP2007139888A (ja) | 光送信装置 | |
JP5212475B2 (ja) | 波長可変光送信機 | |
JP2011253930A (ja) | 半導体光装置 | |
JP6257544B2 (ja) | 半導体レーザー | |
US9927676B2 (en) | Optical device with integrated reflector(s) comprising a loop reflector integrating a mach-zehnder interferometer | |
JP5001239B2 (ja) | 半導体波長可変レーザ | |
JP6610834B2 (ja) | 波長可変レーザ装置 | |
JP2010034114A (ja) | レーザ装置、レーザモジュールおよび波長多重光通信システム | |
JP2017168545A (ja) | 光モジュール | |
JP4022792B2 (ja) | 半導体光増幅装置 | |
US20220200244A1 (en) | Broadband arbitrary wavelength multichannel laser source | |
JP6943150B2 (ja) | 半導体光素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190227 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20191225 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200107 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20200609 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20200904 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20210119 |
|
C23 | Notice of termination of proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C23 Effective date: 20210302 |
|
C03 | Trial/appeal decision taken |
Free format text: JAPANESE INTERMEDIATE CODE: C03 Effective date: 20210406 |
|
C30A | Notification sent |
Free format text: JAPANESE INTERMEDIATE CODE: C3012 Effective date: 20210406 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210426 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6876383 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |