JP6873696B2 - 強化されたプロセスの均一性および低減された基板の滑りのためのサセプタ - Google Patents

強化されたプロセスの均一性および低減された基板の滑りのためのサセプタ Download PDF

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JP6873696B2
JP6873696B2 JP2016500800A JP2016500800A JP6873696B2 JP 6873696 B2 JP6873696 B2 JP 6873696B2 JP 2016500800 A JP2016500800 A JP 2016500800A JP 2016500800 A JP2016500800 A JP 2016500800A JP 6873696 B2 JP6873696 B2 JP 6873696B2
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substrate
recess
support
lift pin
substrate support
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JP2016500800A
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Japanese (ja)
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JP2016518699A5 (enExample
JP2016518699A (ja
Inventor
ガンガーダル シーラヴァント
ガンガーダル シーラヴァント
マハデヴ ジョシ
マハデヴ ジョシ
裕司 青木
裕司 青木
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2016500800A 2013-03-15 2014-03-07 強化されたプロセスの均一性および低減された基板の滑りのためのサセプタ Active JP6873696B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361788920P 2013-03-15 2013-03-15
US61/788,920 2013-03-15
US14/197,699 US9799548B2 (en) 2013-03-15 2014-03-05 Susceptors for enhanced process uniformity and reduced substrate slippage
US14/197,699 2014-03-05
PCT/US2014/021639 WO2014149957A1 (en) 2013-03-15 2014-03-07 Susceptors for enhanced process uniformity and reduced substrate slippage

Publications (3)

Publication Number Publication Date
JP2016518699A JP2016518699A (ja) 2016-06-23
JP2016518699A5 JP2016518699A5 (enExample) 2017-04-13
JP6873696B2 true JP6873696B2 (ja) 2021-05-19

Family

ID=51524050

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Application Number Title Priority Date Filing Date
JP2016500800A Active JP6873696B2 (ja) 2013-03-15 2014-03-07 強化されたプロセスの均一性および低減された基板の滑りのためのサセプタ

Country Status (6)

Country Link
US (1) US9799548B2 (enExample)
JP (1) JP6873696B2 (enExample)
KR (1) KR102335921B1 (enExample)
CN (2) CN105009272A (enExample)
TW (1) TWI631660B (enExample)
WO (1) WO2014149957A1 (enExample)

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GB2534146B (en) * 2015-01-14 2017-06-28 Sky Tech Inc Wafer carrier tray
JP2018026503A (ja) * 2016-08-12 2018-02-15 株式会社Sumco サセプタ、エピタキシャル成長装置、及びエピタキシャルウェーハの製造方法
CN109661715B (zh) * 2016-09-05 2023-07-28 信越半导体株式会社 气相生长装置及外延晶片的制造方法
KR102540125B1 (ko) 2017-08-30 2023-06-05 주성엔지니어링(주) 기판안치수단 및 기판처리장치
US10755955B2 (en) * 2018-02-12 2020-08-25 Applied Materials, Inc. Substrate transfer mechanism to reduce back-side substrate contact
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
CN115704108A (zh) * 2021-08-09 2023-02-17 广州集成电路技术研究院有限公司 预热环和基板处理装置
JP7774416B2 (ja) * 2021-10-20 2025-11-21 東京エレクトロン株式会社 基板載置方法および基板載置機構

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Also Published As

Publication number Publication date
KR20150130261A (ko) 2015-11-23
CN112201594A (zh) 2021-01-08
TWI631660B (zh) 2018-08-01
WO2014149957A1 (en) 2014-09-25
CN112201594B (zh) 2024-09-20
JP2016518699A (ja) 2016-06-23
CN105009272A (zh) 2015-10-28
US20140265091A1 (en) 2014-09-18
TW201448111A (zh) 2014-12-16
US9799548B2 (en) 2017-10-24
KR102335921B1 (ko) 2021-12-03

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