JP6870776B2 - 発光装置、発光モジュール - Google Patents
発光装置、発光モジュール Download PDFInfo
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- JP6870776B2 JP6870776B2 JP2020193841A JP2020193841A JP6870776B2 JP 6870776 B2 JP6870776 B2 JP 6870776B2 JP 2020193841 A JP2020193841 A JP 2020193841A JP 2020193841 A JP2020193841 A JP 2020193841A JP 6870776 B2 JP6870776 B2 JP 6870776B2
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Images
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Description
<実施形態1>
(1)電極面2bに一対の電極ポスト2cを備えた発光素子2と、各々の電極ポスト2cの表面の一部が露出するように発光素子2を覆う被覆部材3と、を備えた中間体8を準備する工程と、
(2)露出された一対の電極ポスト2cに電気接続されて、電極ポスト2cと被覆部材3を連続して覆う金属層9を形成する積層工程と、
(3)金属層9にレーザー光を照射して金属層9の一部を除去し、一対の電極層5に分離して互いに離間すると共に、一対の電極ポスト2cのそれぞれよりも面積の大きい一対の電極層5を形成する分割工程と、
(4)一対の電極層5に電気接続する一対の電極端子6を、電極層5よりも厚く、かつ一対の電極ポスト2cの間隔よりも広い間隔で設ける電極形成工程と、
を含む。
(中間体を準備する工程)
(金属層9を形成する積層工程)
(電極間スリットを形成する分割工程)
(電極端子6の形成工程)
(発光装置に分離する工程)
<変形例1>
<実施形態2>
<実施形態3>
(発光モジュール11)
(導光板7)
(態様)
一対の電極ポスト2cを設けてなる発光素子2の電極面2bを覆い、かつ電極ポスト2cの露出部を設けてなる被覆部材3と、
被覆部材3の表面に設けられて電極ポスト2cの露出部に電気接続してなる一対の電極層5と、
電極層5に電気接続され、かつ被覆部材3の表面に設けられてなる一対の電極端子6とを備え、
一対の電極端子6が、電極層5よりも厚く、かつ一対の電極ポスト2cの間隔よりも広い間隔に配置されてなることを特徴とする発光装置。
(態様2)
一対の電極ポスト2cを設けてなる前記発光素子の前記電極面2bが方形状で、
一対の電極端子6が、電極面2bの外周縁の対称位置に配置されてなることを特徴とする発光装置。
(態様3)
一対の電極ポスト2cを設けてなる発光素子2の電極面2bが方形状で、
電極面2bに、電極層5のない絶縁領域10を設けており、
絶縁領域10が電極間スリットであることを特徴とする発光装置。
(態様4)
電極面2bに配置してなる絶縁領域10の電極間スリットが、電極面2bの中央部から対角方向に伸びる傾斜スリット10aを有することを特徴とする発光装置。
(態様5)
絶縁領域10である電極間スリットが、傾斜スリット10aの両端部に連結してなる平行スリット10bを有し、
平行スリット10bが、互いに平行な姿勢であって、電極面2bの対向する2辺と平行な方向に伸びることを特徴とする発光装置。
傾斜スリット10aと平行スリット10bとがなす角度が鈍角で、
電極層5が、スリットの両側に設けられ、幅広部5Aと幅狭部5Bとを有することを特徴とする発光装置。
(態様7)
一対の電極端子6が平行スリット10bの延伸方向に伸びる形状であることを特徴とする発光装置。
(態様8)
一対の前記電極端子が前記被覆部材の対向する隅部であって中央部を除く領域に配置されることを特徴とする発光装置。
(態様9)
電極端子6が、方形状である電極面2bの対向する隅部であって中央部を除く領域に配置され、電極面2bの中央部に電極ポスト2cを配置してなることを特徴とする発光装置。
(態様10)
電極端子6の厚さが電極層5の厚さの10倍以上であることを特徴とする発光装置。
(態様11)
外部に光を放射する発光面となる第1主面7cの反対側の第2主面7dに凹部7aを設けてなる透光性の導光板7と、を備え、
発光装置1が、導光板7の凹部7aに配置されてなる発光モジュール。
(態様12)
中間体8の電極ポスト2cの露出部に電気接続する一対の電極層5を被覆部材3の表面に形成する工程と、
一対の電極層5に電気接続する一対の電極端子6を、電極層5よりも厚く、かつ一対の電極ポスト2cの間隔よりも広い間隔で設ける電極形成工程と、
を含む発光装置の製造方法。
(態様13)
電極層5を金属の薄膜とし、電極層5の表面に金属ペーストを塗布して電極端子6を設けることを特徴とする発光装置の製造方法。
(態様14)
電極層5を形成する工程において、被覆部材3の表面に金属層9を形成し、
金属層9にレーザー光を照射して金属層9の一部を除去して一対の電極層5に分離することを特徴とする発光装置の製造方法。
(態様15)
発光面となる第1主面7cと、第1主面7cと反対側にあって凹部7aを設けてなる第2主面7dと、
を備える導光板7と、
を準備する工程と、
発光装置1を凹部7aに固着する工程と、
導光板7の第2主面7dに、発光装置1を埋設する光反射性部材を設ける工程と、
光反射性部材を研磨して電極端子6を露出し、露出する電極端子6の表面に導電膜15を形成する工程と、
を含む発光モジュールの製造方法。
2…発光素子
2a…積層構造体
2b…電極面
2c…電極ポスト
2d…光放射面
3…被覆部材
4…透光性部材
4A…第1の透光性部材
4B…第2の透光性部材
5…電極層
5A…幅広部
5B…幅狭部
6…電極端子
6a…切欠部
7…導光板
7a…凹部
7b…光学機能部
7c…第1主面
7d…第2主面
7e…V溝
8…中間体
9…金属層
10…絶縁領域
10a…傾斜スリット
10b…平行スリット
11…発光モジュール
12…透光性接合部材
12a…傾斜面
14…光反射性部材
15…導電膜
16…透光性接着部材
18…アライメントマーク
30…支持部材
X…切断ライン
Y…切断ライン
Z…切断ライン
Claims (6)
- 上面と、前記上面と反対側に位置する電極面と、前記上面と前記電極面との間に位置する側面と、を含む半導体層が積層されてなる積層構造体と、
前記電極面に配置された一対の電極ポストと、
を有する発光素子と、
前記積層構造体の前記上面及び前記側面を覆う透光性部材と、
前記透光性部材の下面と前記発光素子の前記電極面とを覆い、かつ前記電極ポストの露出部を設けてなる被覆部材と、
前記透光性部材の上面に配置された光拡散部と、
前記被覆部材の表面に設けられて前記電極ポストの露出部に電気接続してなる一対の電極層と、
を備え、
前記被覆部材は、光反射性の樹脂部材であり、
前記電極層に電気接続され、かつ前記電極層の表面に設けられてなる一対の電極端子を備え、
一対の前記電極端子が、前記電極層よりも厚く、かつ一対の前記電極ポストの間隔よりも広い間隔に配置されてなる発光装置。 - 請求項1に記載する発光装置であって、
前記電極層の膜厚が、5nm以上100nm以下である発光装置。 - 請求項1又は2に記載する発光装置であって、
一対の前記電極ポストを設けてなる前記発光素子の前記電極面が方形状で、
一対の前記電極端子が、方形状の前記電極面から離れた対称位置に配置されてなる発光装置。 - 請求項1ないし3のいずれか一項に記載する発光装置であって、
前記発光素子の前記電極面が方形状であり、前記電極面の対角方向に前記電極ポストを配置してなる発光装置。 - 請求項1ないし4のいずれか一項に記載する発光装置であって、
前記積層構造体の側面から前記透光性部材の側面までの幅が、前記積層構造体の上面から前記透光性部材の上面までの厚さよりも大きい発光装置。 - 請求項1ないし5のいずれか一項に記載する発光装置と、
外部に光を放射する発光面となる第1主面の反対側の第2主面に凹部を設けてなる透光性の導光板と、を備え、
前記発光装置が、前記導光板の前記凹部に配置されてなる発光モジュール。
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US6005276A (en) * | 1997-11-12 | 1999-12-21 | Advanced Photonix, Inc. | Solid state photodetector with light-responsive rear face |
JP5110744B2 (ja) | 2000-12-21 | 2012-12-26 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 発光装置及びその製造方法 |
JP2005038776A (ja) | 2003-07-17 | 2005-02-10 | Sony Corp | 導光板およびその製造方法、面発光装置、ならびに液晶表示装置 |
US7179670B2 (en) * | 2004-03-05 | 2007-02-20 | Gelcore, Llc | Flip-chip light emitting diode device without sub-mount |
JP4747726B2 (ja) * | 2004-09-09 | 2011-08-17 | 豊田合成株式会社 | 発光装置 |
JP2007165613A (ja) * | 2005-12-14 | 2007-06-28 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
TWI307178B (en) * | 2006-03-24 | 2009-03-01 | Advanced Optoelectronic Tech | Package structure of led |
JP2009117536A (ja) * | 2007-11-05 | 2009-05-28 | Towa Corp | 樹脂封止発光体及びその製造方法 |
JP5495495B2 (ja) | 2008-02-18 | 2014-05-21 | シチズン電子株式会社 | 表面実装型発光ダイオード |
JP5426124B2 (ja) * | 2008-08-28 | 2014-02-26 | 株式会社東芝 | 半導体発光装置の製造方法及び半導体発光装置 |
JP2011159951A (ja) * | 2010-01-07 | 2011-08-18 | Kyushu Institute Of Technology | Ledモジュール装置及びその製造方法 |
JP5390472B2 (ja) | 2010-06-03 | 2014-01-15 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP5508244B2 (ja) * | 2010-11-15 | 2014-05-28 | シチズンホールディングス株式会社 | 半導体発光装置の製造方法 |
JPWO2012141094A1 (ja) * | 2011-04-13 | 2014-07-28 | シャープ株式会社 | 光源モジュールおよびこれを備えた電子機器 |
JP6107060B2 (ja) * | 2011-12-26 | 2017-04-05 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2014160736A (ja) * | 2013-02-19 | 2014-09-04 | Toshiba Corp | 半導体発光装置及び発光装置 |
TWI707484B (zh) | 2013-11-14 | 2020-10-11 | 晶元光電股份有限公司 | 發光裝置 |
CN109119412B (zh) * | 2013-12-02 | 2022-05-31 | 日亚化学工业株式会社 | 发光装置及其制造方法 |
TW201526315A (zh) | 2015-02-17 | 2015-07-01 | Xiu-Zhang Huang | 覆晶式發光二極體及其製造方法 |
JP2016171188A (ja) | 2015-03-12 | 2016-09-23 | 株式会社東芝 | 半導体発光装置とその製造方法 |
JP6604786B2 (ja) | 2015-09-11 | 2019-11-13 | 三星電子株式会社 | 半導体発光装置およびその製造方法 |
JP6645781B2 (ja) * | 2015-09-11 | 2020-02-14 | アルパッド株式会社 | 半導体発光装置 |
US10199533B2 (en) * | 2015-12-21 | 2019-02-05 | Nichia Corporation | Method of manufacturing light emitting device |
JP6547661B2 (ja) * | 2016-03-09 | 2019-07-24 | 豊田合成株式会社 | 発光装置 |
JP6790899B2 (ja) * | 2017-02-17 | 2020-11-25 | 日亜化学工業株式会社 | 発光モジュールの製造方法及び発光モジュール |
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