JP6865008B2 - 基板処理装置及び基板処理方法 - Google Patents

基板処理装置及び基板処理方法 Download PDF

Info

Publication number
JP6865008B2
JP6865008B2 JP2016194349A JP2016194349A JP6865008B2 JP 6865008 B2 JP6865008 B2 JP 6865008B2 JP 2016194349 A JP2016194349 A JP 2016194349A JP 2016194349 A JP2016194349 A JP 2016194349A JP 6865008 B2 JP6865008 B2 JP 6865008B2
Authority
JP
Japan
Prior art keywords
substrate
nozzle
processed
center
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016194349A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018056508A (ja
Inventor
幸之介 笹平
幸之介 笹平
菊池　勉
勉 菊池
晃一 樋口
晃一 樋口
俊秀 林
俊秀 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to JP2016194349A priority Critical patent/JP6865008B2/ja
Priority to TW106130726A priority patent/TWI655034B/zh
Priority to CN201710903098.5A priority patent/CN107887302A/zh
Publication of JP2018056508A publication Critical patent/JP2018056508A/ja
Application granted granted Critical
Publication of JP6865008B2 publication Critical patent/JP6865008B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2016194349A 2016-09-30 2016-09-30 基板処理装置及び基板処理方法 Active JP6865008B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016194349A JP6865008B2 (ja) 2016-09-30 2016-09-30 基板処理装置及び基板処理方法
TW106130726A TWI655034B (zh) 2016-09-30 2017-09-08 基板處理裝置及基板處理方法
CN201710903098.5A CN107887302A (zh) 2016-09-30 2017-09-29 基板处理装置及基板处理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016194349A JP6865008B2 (ja) 2016-09-30 2016-09-30 基板処理装置及び基板処理方法

Publications (2)

Publication Number Publication Date
JP2018056508A JP2018056508A (ja) 2018-04-05
JP6865008B2 true JP6865008B2 (ja) 2021-04-28

Family

ID=61780967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016194349A Active JP6865008B2 (ja) 2016-09-30 2016-09-30 基板処理装置及び基板処理方法

Country Status (3)

Country Link
JP (1) JP6865008B2 (zh)
CN (1) CN107887302A (zh)
TW (1) TWI655034B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109065485B (zh) * 2018-09-04 2020-09-11 江苏晶品新能源科技有限公司 一种单晶硅生产线用硅片高效清洗装置
CN111326440B (zh) * 2018-12-17 2022-09-16 辛耘企业股份有限公司 基板处理装置
JP7292120B2 (ja) * 2019-06-17 2023-06-16 東京エレクトロン株式会社 基板処理方法および基板処理装置
TW202230497A (zh) * 2020-08-28 2022-08-01 日商東京威力科創股份有限公司 基板處理方法、基板處理裝置及記錄媒體
JP2022189496A (ja) * 2021-06-11 2022-12-22 東京エレクトロン株式会社 基板処理方法および基板処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6634806B2 (en) * 2000-03-13 2003-10-21 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
JP5188216B2 (ja) * 2007-07-30 2013-04-24 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP5151629B2 (ja) * 2008-04-03 2013-02-27 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置、現像方法、現像装置及び記憶媒体
JP6014313B2 (ja) * 2011-07-20 2016-10-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US9378988B2 (en) * 2011-07-20 2016-06-28 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method using processing solution
JP6051858B2 (ja) * 2012-12-28 2016-12-27 東京エレクトロン株式会社 基板処理装置
TWI584370B (zh) * 2013-08-27 2017-05-21 Tokyo Electron Ltd A substrate processing method, a substrate processing apparatus, and a memory medium
JP6330998B2 (ja) * 2014-02-17 2018-05-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6410694B2 (ja) * 2014-10-21 2018-10-24 東京エレクトロン株式会社 基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP6331961B2 (ja) * 2014-10-22 2018-05-30 東京エレクトロン株式会社 基板液処理装置
JP5931230B1 (ja) * 2015-01-15 2016-06-08 東京エレクトロン株式会社 液処理方法、液処理装置、及び記録媒体。

Also Published As

Publication number Publication date
TWI655034B (zh) 2019-04-01
CN107887302A (zh) 2018-04-06
JP2018056508A (ja) 2018-04-05
TW201822892A (zh) 2018-07-01

Similar Documents

Publication Publication Date Title
JP6865008B2 (ja) 基板処理装置及び基板処理方法
TWI596686B (zh) 基板處理方法
JP6271304B2 (ja) 基板処理装置及び基板処理方法
KR102514003B1 (ko) 기판 처리 장치, 기판 처리 방법 및 기억 매체
KR20120073089A (ko) 기판 처리 방법 및 기판 처리 장치
JP7138539B2 (ja) 基板処理装置及び基板処理方法
JP6563762B2 (ja) 基板処理装置及び基板処理方法
KR20140114298A (ko) 기판 처리 장치 및 기판 처리 방법
JP6849368B2 (ja) 基板処理装置
US10707098B2 (en) Substrate processing apparatus, substrate processing method and memory medium
JP2002151455A (ja) 半導体ウエハ用洗浄装置
JP6481598B2 (ja) 塗布膜形成方法、塗布膜形成装置及び記憶媒体
JP2019062018A (ja) 基板処理方法、基板処理装置、及び記憶媒体
JP6432644B2 (ja) 塗布膜形成装置、塗布膜形成方法、記憶媒体
JP6160554B2 (ja) 塗布膜形成装置、塗布膜形成方法、記憶媒体
TW201347031A (zh) 基板處理方法
JP6402215B2 (ja) 基板処理方法および基板処理装置
JP4430424B2 (ja) 基板処理装置および基板処理方法
JP2012204720A (ja) 基板処理装置
JP2022043845A (ja) 液処理方法及び液処理装置
JP2017175041A (ja) 基板処理装置および基板処理方法
JP2022087527A (ja) 液処理方法及び液処理装置
JP2020102508A (ja) 基板処理装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190927

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20200626

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200804

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200901

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201030

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201102

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210330

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210405

R150 Certificate of patent or registration of utility model

Ref document number: 6865008

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150