JP2022043845A - 液処理方法及び液処理装置 - Google Patents
液処理方法及び液処理装置 Download PDFInfo
- Publication number
- JP2022043845A JP2022043845A JP2020149317A JP2020149317A JP2022043845A JP 2022043845 A JP2022043845 A JP 2022043845A JP 2020149317 A JP2020149317 A JP 2020149317A JP 2020149317 A JP2020149317 A JP 2020149317A JP 2022043845 A JP2022043845 A JP 2022043845A
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- substrate
- wafer
- nozzle
- back surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 178
- 238000000034 method Methods 0.000 title claims abstract description 31
- 230000002093 peripheral effect Effects 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000003595 mist Substances 0.000 claims abstract description 25
- 238000004140 cleaning Methods 0.000 claims description 128
- 238000010438 heat treatment Methods 0.000 claims description 27
- 230000001737 promoting effect Effects 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 53
- 238000011109 contamination Methods 0.000 description 33
- 230000002265 prevention Effects 0.000 description 32
- 230000003028 elevating effect Effects 0.000 description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000003373 anti-fouling effect Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- 238000007599 discharging Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
回転する前記基板の裏面における周端より中心寄りの位置にミスト状の処理液をノズルから供給すると共に当該処理液が遠心力により当該基板の周端に供給されないように揮発させ、当該基板の裏面の環状領域を局所的に処理する工程と、
を含む。
参考試験として、ウエハWの裏面全体にレジスト膜を形成し、液処理装置1によって当該ウエハWの裏面の洗浄処理を行った。そして、洗浄処理後のウエハWについて撮像した。また比較試験として、ウエハWの裏面全体にレジスト膜を形成し、比較試験用の液処理装置により、当該ウエハWの裏面の洗浄処理を行い、洗浄処理後のウエハWについて撮像した。この比較試験用の液処理装置については、洗浄用ノズルから洗浄液が液流として吐出されることを除き、液処理装置1と同様の構成である。
W ウエハ
11 スピンチャック
41 洗浄用ノズル
Claims (11)
- 基板の裏面の中心部をステージに載置し、当該ステージを回転させる工程と、
回転する前記基板の裏面における周端よりも中心寄りの位置にミスト状の処理液をノズルから供給し、当該処理液が遠心力によって当該基板の周端に供給されないように揮発させて、当該基板の裏面の環状領域を局所的に処理する工程と、
を含む液処理方法。 - 前記処理液は、前記基板の裏面を洗浄する洗浄液である請求項1記載の液処理方法。
- 前記基板の裏面において周縁部を局所的に被覆する環状膜を形成する工程を含み、
前記環状領域を局所的に処理する工程は、
当該環状膜が除去されないように前記処理液を揮発させる工程を含む請求項1または2記載の液処理方法。 - 前記処理液が前記基板に供給されるときに、当該基板を加熱する工程を含む請求項1ないし3のいずれか一つに記載の液処理方法。
- 前記基板を加熱する工程は、当該基板を加熱するための加熱ガスを前記基板の表面に供給する工程を含む請求項4記載の液処理方法。
- 前記環状領域を局所的に処理する工程は、
前記処理液の液流と、当該処理液をミスト化するためのミスト形成用ガスとを前記ノズルに同時に供給する工程を含み、
当該ノズルに供給される前記処理液の液流または前記ミスト形成用ガスを加熱する工程を含む請求項1ないし5のいずれか一つに液処理方法。 - 前記ミスト状の処理液を前記基板に供給するときに、当該処理液の揮発を促進させるための乾燥ガスを当該基板の裏面に供給する工程を含む請求項1ないし6のいずれか一つに記載の液処理方法。
- 前記ノズルの吐出口の前記基板への投影領域について、前記基板の径方向に沿った長さは、当該径方向に直交する方向の長さよりも小さい請求項1ないし7のいずれか一つに記載の液処理方法。
- 前記ステージに載置される前記基板の状態に応じて、前記ノズルについての当該基板に対する位置または当該基板に対する向きを駆動機構により変更して、前記基板における前記ミスト状の処理液が供給される位置を変更する工程を含む請求項1ないし8記載の液処理方法。
- 前記基板の裏面において周縁部を局所的に被覆する環状膜を形成する工程を含み、
前記基板の状態とは、前記環状膜についての当該基板の中心寄りの端部の位置である請求項9記載の液処理方法。 - 基板の裏面の中心部を載置するステージと、
当該ステージを回転させる回転機構と、
前記基板の周端に遠心力により処理液が供給されずに揮発するように、回転する前記基板の裏面における周端よりも中心寄りの位置にミスト状の処理液を供給して、当該基板の裏面の環状領域を局所的に処理するためのノズルと、
を備える液処理装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020149317A JP7512779B2 (ja) | 2020-09-04 | 2020-09-04 | 液処理方法及び液処理装置 |
CN202110980802.3A CN114141654A (zh) | 2020-09-04 | 2021-08-25 | 液处理方法和液处理装置 |
KR1020210112173A KR20220031499A (ko) | 2020-09-04 | 2021-08-25 | 액 처리 방법 및 액 처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020149317A JP7512779B2 (ja) | 2020-09-04 | 2020-09-04 | 液処理方法及び液処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022043845A true JP2022043845A (ja) | 2022-03-16 |
JP7512779B2 JP7512779B2 (ja) | 2024-07-09 |
Family
ID=80393663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020149317A Active JP7512779B2 (ja) | 2020-09-04 | 2020-09-04 | 液処理方法及び液処理装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7512779B2 (ja) |
KR (1) | KR20220031499A (ja) |
CN (1) | CN114141654A (ja) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5622282B2 (ja) | 2011-09-30 | 2014-11-12 | 東京エレクトロン株式会社 | 基板裏面洗浄装置 |
JP2013120911A (ja) | 2011-12-08 | 2013-06-17 | Sharp Corp | ウェハ洗浄装置およびその方法 |
JP6045357B2 (ja) | 2013-01-16 | 2016-12-14 | キヤノン株式会社 | 薬液層の形成方法 |
JP7052573B2 (ja) | 2018-06-06 | 2022-04-12 | 東京エレクトロン株式会社 | 塗布膜形成装置及び塗布膜形成装置の調整方法 |
-
2020
- 2020-09-04 JP JP2020149317A patent/JP7512779B2/ja active Active
-
2021
- 2021-08-25 KR KR1020210112173A patent/KR20220031499A/ko active Search and Examination
- 2021-08-25 CN CN202110980802.3A patent/CN114141654A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN114141654A (zh) | 2022-03-04 |
KR20220031499A (ko) | 2022-03-11 |
JP7512779B2 (ja) | 2024-07-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI567815B (zh) | 基板洗淨方法、基板洗淨裝置及基板洗淨用記憶媒體 | |
TWI619190B (zh) | Liquid processing method, memory medium and liquid processing device | |
TWI790241B (zh) | 基板處理裝置、基板處理方法及記憶媒體 | |
TWI354344B (ja) | ||
KR101976968B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
JP6118758B2 (ja) | 基板処理装置及び基板処理方法並びに基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体 | |
JP5139844B2 (ja) | 基板処理方法および基板処理装置 | |
US9623435B2 (en) | Substrate processing apparatus for coating liquid composed of first coating liquid and second coating liquid on substrate with slit-shaped ejection port | |
TWI548467B (zh) | 基板處理方法及基板處理裝置 | |
TW201719742A (zh) | 基板液處理裝置、基板液處理方法及記憶媒體 | |
KR102652667B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
TWI584366B (zh) | A substrate processing apparatus and a substrate processing method and a computer-readable recording medium for recording a substrate processing program | |
JP7309485B2 (ja) | エッチング装置およびエッチング方法 | |
JP6449097B2 (ja) | 基板処理方法及び基板処理装置並びに基板処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 | |
TWI775574B (zh) | 基板處理方法及基板處理裝置 | |
JP6111282B2 (ja) | 基板処理方法および基板処理装置 | |
CN107230653B (zh) | 基板处理装置、基板处理方法以及存储介质 | |
JP2019062018A (ja) | 基板処理方法、基板処理装置、及び記憶媒体 | |
JP2022043845A (ja) | 液処理方法及び液処理装置 | |
JP6402215B2 (ja) | 基板処理方法および基板処理装置 | |
JP6411571B2 (ja) | 基板処理装置及び基板処理方法並びに基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体 | |
JP2020177982A (ja) | 塗布膜形成方法及び塗布膜形成装置 | |
KR20160019606A (ko) | 기판 처리 장치 및 기판 건조 방법 | |
JP7143465B2 (ja) | 基板処理装置および基板処理方法 | |
JP2017103500A (ja) | 基板処理方法および基板処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230605 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20240209 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240220 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240326 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240528 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240610 |