JP6862817B2 - 銅およびモリブデンを含む多層薄膜をエッチングする液体組成物、およびこれを用いたエッチング方法、並びに表示デバイスの製造方法 - Google Patents

銅およびモリブデンを含む多層薄膜をエッチングする液体組成物、およびこれを用いたエッチング方法、並びに表示デバイスの製造方法 Download PDF

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JP6862817B2
JP6862817B2 JP2016246122A JP2016246122A JP6862817B2 JP 6862817 B2 JP6862817 B2 JP 6862817B2 JP 2016246122 A JP2016246122 A JP 2016246122A JP 2016246122 A JP2016246122 A JP 2016246122A JP 6862817 B2 JP6862817 B2 JP 6862817B2
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liquid composition
acid
mass
copper
molybdenum
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JP2016246122A
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Japanese (ja)
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JP2017115245A (ja
Inventor
将英 松原
将英 松原
邦夫 夕部
邦夫 夕部
麻里 茂田
麻里 茂田
智子 浅井
智子 浅井
奈津美 原田
奈津美 原田
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Mitsubishi Gas Chemical Co Inc
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Mitsubishi Gas Chemical Co Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Dispersion Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
JP2016246122A 2015-12-21 2016-12-20 銅およびモリブデンを含む多層薄膜をエッチングする液体組成物、およびこれを用いたエッチング方法、並びに表示デバイスの製造方法 Active JP6862817B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015248179 2015-12-21
JP2015248179 2015-12-21

Publications (2)

Publication Number Publication Date
JP2017115245A JP2017115245A (ja) 2017-06-29
JP6862817B2 true JP6862817B2 (ja) 2021-04-21

Family

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JP2016246122A Active JP6862817B2 (ja) 2015-12-21 2016-12-20 銅およびモリブデンを含む多層薄膜をエッチングする液体組成物、およびこれを用いたエッチング方法、並びに表示デバイスの製造方法

Country Status (4)

Country Link
JP (1) JP6862817B2 (zh)
KR (1) KR102493276B1 (zh)
CN (1) CN107099801B (zh)
TW (1) TWI706056B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111286738A (zh) * 2020-01-17 2020-06-16 江阴江化微电子材料股份有限公司 一种酸性铜蚀刻液的生产工艺
CN112030165B (zh) * 2020-08-28 2022-05-20 武汉迪赛新材料有限公司 Tft-lcd制程用铜钼合层蚀刻液

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3105971B2 (ja) 1991-11-07 2000-11-06 株式会社豊田中央研究所 化学溶解処理液
EP0489339B1 (en) * 1990-11-27 1996-04-17 Kabushiki Kaisha Toyota Chuo Kenkyusho Brightening chemical polishing solution for hardened steel article and method of using it
JPH11256374A (ja) 1997-07-08 1999-09-21 Aichi Steel Works Ltd ステンレス鋼及びチタン用酸洗処理液及びその酸洗処理方法
US8980121B2 (en) * 2010-01-28 2015-03-17 Mitsubishi Gas Chemical Company, Inc. Etching liquid for a copper/titanium multilayer thin film
CN103717787B (zh) * 2011-07-26 2016-08-24 三菱瓦斯化学株式会社 铜/钼系多层薄膜用蚀刻液
KR101517013B1 (ko) * 2013-10-02 2015-05-04 주식회사 이엔에프테크놀로지 구리 및 몰리브덴 함유 막의 식각액 조성물
JP5866566B2 (ja) * 2014-04-25 2016-02-17 パナソニックＩｐマネジメント株式会社 モリブデンと銅を含む多層膜用エッチング液とエッチング濃縮液およびエッチング方法

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Publication number Publication date
TWI706056B (zh) 2020-10-01
JP2017115245A (ja) 2017-06-29
CN107099801A (zh) 2017-08-29
KR102493276B1 (ko) 2023-01-30
TW201734266A (zh) 2017-10-01
CN107099801B (zh) 2020-07-10
KR20170074190A (ko) 2017-06-29

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