JP6851794B2 - 研磨方法 - Google Patents
研磨方法 Download PDFInfo
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- JP6851794B2 JP6851794B2 JP2016223630A JP2016223630A JP6851794B2 JP 6851794 B2 JP6851794 B2 JP 6851794B2 JP 2016223630 A JP2016223630 A JP 2016223630A JP 2016223630 A JP2016223630 A JP 2016223630A JP 6851794 B2 JP6851794 B2 JP 6851794B2
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- 238000005498 polishing Methods 0.000 title claims description 310
- 238000000034 method Methods 0.000 title claims description 21
- 239000007788 liquid Substances 0.000 claims description 77
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 51
- 239000002245 particle Substances 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004745 nonwoven fabric Substances 0.000 claims description 4
- 229920002635 polyurethane Polymers 0.000 claims description 4
- 239000004814 polyurethane Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 107
- 239000002585 base Substances 0.000 description 33
- 239000000463 material Substances 0.000 description 33
- 230000003028 elevating effect Effects 0.000 description 24
- 239000006061 abrasive grain Substances 0.000 description 19
- 230000007246 mechanism Effects 0.000 description 14
- 239000012530 fluid Substances 0.000 description 12
- 238000005247 gettering Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 230000032258 transport Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 238000007517 polishing process Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000003513 alkali Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 2
- 239000000920 calcium hydroxide Substances 0.000 description 2
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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Description
また、アルカリ粒子の水への溶解度は、25℃において0.17重量%以下であってもよい。
砥粒とアルカリ粒子が混入された研磨パッドを用いて、ウエーハを研磨するウエーハの研磨方法であって、
設定された研磨条件に基づき回転するウエーハに研磨パッドを当接させつつ回転させて、純水を研磨パッドに供給してアルカリ性の研磨液を生成し該ウエーハに作用させて研磨する研磨工程と、
該研磨工程中に該研磨液のpH値を測定する測定工程と、
測定されたpH値に基づき該研磨条件を補正する補正工程と、を含み、
補正された新たな研磨条件で研磨することによりウエーハの研磨状態を一定に保つ、ウエーハの研磨方法。
38a,38b 研削ユニット
48 研磨ユニット
56 水平移動ユニット
61 電磁弁
62 純水供給源
63 受け部
65 排水管
67 pH計測部
78b 研磨パッド
79 流体供給路
80 ドレスユニット
84 ドレッシングパッド
85 昇降機構
90 基材
90a 研磨面
91 砥粒
92 アルカリ粒子
100 制御部
W ウエーハ
WR 裏面
WS 表面
Claims (2)
- ポリウレタンおよび不織布からなる基材中にシリカ粒子とアルカリ粒子とを含むウエーハを研磨するための研磨パッドを用いてウエーハを研磨する研磨方法であって、
該研磨パッドに純水を供給することによりアルカリ性の研磨液を生成し、該研磨パッドをウエーハに当接させることにより該ウエーハを研磨する研磨工程と、
該研磨工程中に該研磨液のpH値を測定するpH測定工程と、
該pH測定工程にて測定されたpH値に基づき、少なくともウエーハの研磨時間および該研磨パッドへの純水の供給量を変更する研磨条件変更工程と、
該研磨液のpH値を測定し、測定したpH値が所定の研磨液範囲内にあるかどうかを判定する判定工程と、
該判定工程において、該pH値が研磨液範囲の下限閾値よりも小さく該研磨液範囲にないと判定された場合、該研磨パッドをドレッシングし、該研磨液のpH値を下限閾値よりも大きくして該研磨液範囲に含まれるように調整するドレッシング工程と、
を含む、研磨方法。 - 該アルカリ粒子の水への溶解度は、25℃において0.17重量%以下である、請求項1に記載の研磨方法。
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JP6851794B2 true JP6851794B2 (ja) | 2021-03-31 |
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Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10315135A (ja) * | 1997-05-23 | 1998-12-02 | Nec Corp | 研磨溶液濃度の制御方法及び制御装置 |
JP4190219B2 (ja) * | 2002-06-27 | 2008-12-03 | 泰弘 谷 | 化学的機械的研磨パッド及びその製造方法 |
JP2004071833A (ja) * | 2002-08-06 | 2004-03-04 | Sumitomo Mitsubishi Silicon Corp | 半導体ウェーハの両面研磨方法 |
JP5060755B2 (ja) * | 2006-09-29 | 2012-10-31 | Sumco Techxiv株式会社 | 半導体ウェハの粗研磨方法、及び半導体ウェハの研磨装置 |
JP2010056127A (ja) * | 2008-08-26 | 2010-03-11 | Hitachi Chem Co Ltd | シリコン膜用cmpスラリー |
JP2009094233A (ja) * | 2007-10-05 | 2009-04-30 | Showa Denko Kk | 半導体基板用研磨組成物 |
JP5222626B2 (ja) * | 2008-05-20 | 2013-06-26 | 富士紡ホールディングス株式会社 | 研磨パッドおよび研磨パッドの製造方法 |
JP2010225987A (ja) * | 2009-03-25 | 2010-10-07 | Disco Abrasive Syst Ltd | ウェーハの研磨方法及び研磨パッド |
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