JP6842952B2 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法 Download PDF

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Publication number
JP6842952B2
JP6842952B2 JP2017037562A JP2017037562A JP6842952B2 JP 6842952 B2 JP6842952 B2 JP 6842952B2 JP 2017037562 A JP2017037562 A JP 2017037562A JP 2017037562 A JP2017037562 A JP 2017037562A JP 6842952 B2 JP6842952 B2 JP 6842952B2
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Japan
Prior art keywords
substrate
nozzle
liquid
processing
height position
Prior art date
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JP2017037562A
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English (en)
Japanese (ja)
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JP2018142677A (ja
Inventor
励 武明
励 武明
幸嗣 安藤
幸嗣 安藤
前川　直嗣
直嗣 前川
弘晃 石井
弘晃 石井
陽介 安武
陽介 安武
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2017037562A priority Critical patent/JP6842952B2/ja
Priority to CN201880008897.9A priority patent/CN110226216B/zh
Priority to PCT/JP2018/002153 priority patent/WO2018159163A1/ja
Priority to TW107102528A priority patent/TWI682474B/zh
Priority to KR1020197022571A priority patent/KR102278178B1/ko
Publication of JP2018142677A publication Critical patent/JP2018142677A/ja
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Publication of JP6842952B2 publication Critical patent/JP6842952B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2017037562A 2017-02-28 2017-02-28 基板処理装置および基板処理方法 Active JP6842952B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017037562A JP6842952B2 (ja) 2017-02-28 2017-02-28 基板処理装置および基板処理方法
CN201880008897.9A CN110226216B (zh) 2017-02-28 2018-01-24 基板处理装置以及基板处理方法
PCT/JP2018/002153 WO2018159163A1 (ja) 2017-02-28 2018-01-24 基板処理装置および基板処理方法
TW107102528A TWI682474B (zh) 2017-02-28 2018-01-24 基板處理裝置以及基板處理方法
KR1020197022571A KR102278178B1 (ko) 2017-02-28 2018-01-24 기판 처리 장치 및 기판 처리 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017037562A JP6842952B2 (ja) 2017-02-28 2017-02-28 基板処理装置および基板処理方法

Publications (2)

Publication Number Publication Date
JP2018142677A JP2018142677A (ja) 2018-09-13
JP6842952B2 true JP6842952B2 (ja) 2021-03-17

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ID=63370386

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Application Number Title Priority Date Filing Date
JP2017037562A Active JP6842952B2 (ja) 2017-02-28 2017-02-28 基板処理装置および基板処理方法

Country Status (5)

Country Link
JP (1) JP6842952B2 (zh)
KR (1) KR102278178B1 (zh)
CN (1) CN110226216B (zh)
TW (1) TWI682474B (zh)
WO (1) WO2018159163A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7145019B2 (ja) * 2018-09-19 2022-09-30 株式会社Ｓｃｒｅｅｎホールディングス レシピ変換方法、レシピ変換プログラム、レシピ変換装置および基板処理システム
JP7261052B2 (ja) * 2019-03-26 2023-04-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置およびその搬送制御方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
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JP2001110712A (ja) * 1999-10-12 2001-04-20 Tokyo Electron Ltd 塗布膜除去装置及び塗布膜除去方法
JP2004179211A (ja) * 2002-11-25 2004-06-24 Nec Kansai Ltd レジスト塗布装置のエッジリンス機構
JP2004241492A (ja) * 2003-02-04 2004-08-26 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2005217282A (ja) * 2004-01-30 2005-08-11 Tokyo Electron Ltd 塗布膜形成方法及び塗布膜形成装置
KR20070074270A (ko) * 2006-01-09 2007-07-12 주식회사 탑 엔지니어링 페이스트 도포장치의 디스펜스 헤드
JP5090089B2 (ja) * 2006-10-19 2012-12-05 大日本スクリーン製造株式会社 基板処理装置
KR101065557B1 (ko) * 2008-10-29 2011-09-19 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리장치
JP5449239B2 (ja) 2010-05-12 2014-03-19 東京エレクトロン株式会社 基板処理装置、基板処理方法及びプログラムを記録した記憶媒体
JP6183705B2 (ja) * 2013-01-15 2017-08-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6242056B2 (ja) * 2013-02-15 2017-12-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US20140261572A1 (en) * 2013-03-15 2014-09-18 Dainippon Screen Mfg.Co., Ltd. Substrate treatment apparatus and substrate treatment method
JP6112509B2 (ja) * 2013-03-15 2017-04-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6203098B2 (ja) * 2013-03-29 2017-09-27 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
TWI597770B (zh) * 2013-09-27 2017-09-01 斯克林集團公司 基板處理裝置及基板處理方法
JP6211910B2 (ja) * 2013-12-03 2017-10-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR101673061B1 (ko) * 2013-12-03 2016-11-04 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
TWI578396B (zh) * 2013-12-11 2017-04-11 斯克林集團公司 基板處理方法及基板處理裝置
JP6118758B2 (ja) * 2014-05-01 2017-04-19 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体
KR102342131B1 (ko) * 2014-08-15 2021-12-21 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
JP6389089B2 (ja) * 2014-09-18 2018-09-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6475487B2 (ja) * 2014-12-15 2019-02-27 株式会社Ｓｃｒｅｅｎセミコンダクターソリューションズ 現像方法
JP6352824B2 (ja) * 2015-01-23 2018-07-04 東芝メモリ株式会社 基板処理装置、制御プログラムおよび制御方法
US10249487B2 (en) * 2015-01-23 2019-04-02 SCREEN Holdings Co., Ltd. Substrate processing method
JP6475071B2 (ja) * 2015-04-24 2019-02-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Also Published As

Publication number Publication date
CN110226216A (zh) 2019-09-10
KR20190100374A (ko) 2019-08-28
TWI682474B (zh) 2020-01-11
WO2018159163A1 (ja) 2018-09-07
KR102278178B1 (ko) 2021-07-19
TW201834103A (zh) 2018-09-16
CN110226216B (zh) 2023-06-20
JP2018142677A (ja) 2018-09-13

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