JP6816912B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP6816912B2 JP6816912B2 JP2016007508A JP2016007508A JP6816912B2 JP 6816912 B2 JP6816912 B2 JP 6816912B2 JP 2016007508 A JP2016007508 A JP 2016007508A JP 2016007508 A JP2016007508 A JP 2016007508A JP 6816912 B2 JP6816912 B2 JP 6816912B2
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- 239000000758 substrate Substances 0.000 claims description 64
- 229910052751 metal Inorganic materials 0.000 claims description 63
- 239000002184 metal Substances 0.000 claims description 63
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000004973 liquid crystal related substance Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Theoretical Computer Science (AREA)
Description
する。
100 基板
102 半導体層
102a ドレイン領域
104 第3の絶縁層
106 第1の金属層
108 第1の絶縁層
110 第1の開口
112 第2の金属層
112a 金属パッド
112b データ線
116 第2の絶縁層
118 第2の開口
120 透明電極
300 アレイ基板
350 透明基板
400 表示層
500 表示装置
A 幾何中心
B 幾何中心
P 画素領域
α 夾角
Claims (10)
- アレイに配列された複数の画素構造が定められたアレイ基板を含み、
前記画素構造の各々は、
基板と、
前記基板の上方に配置された半導体層と、
前記基板の上方に配置され、ゲート線として機能する第1の金属層と、
前記半導体層の上方に配置され、前記半導体層の上面と第1の絶縁層の側壁面を露出させる第1の開口を含む第1の絶縁層と、
前記第1の絶縁層の上方に配置され、且つ前記第1の開口を介して前記半導体層の前記上面と前記第1の絶縁層の前記側壁面の上方に形成された金属パッドと、
前記金属パッドと前記第1の絶縁層の上方に配置され、前記第1の絶縁層の前記側壁面の上方の前記金属パッドを露出させる第2の開口を含む第2の絶縁層と、を含み、
前記第1の開口、前記第2の開口、および前記第1の金属層の一方向に沿った順序は、前記第1の金属層、前記第2の開口、および前記第1の開口であり、
前記第2の開口の底部が、前記第1の開口の底部と部分的に重なり、且つ前記第1の開口の底部の一部が前記第2の開口の底部の外側に配置される、
表示装置。 - 前記第2の開口で露出した前記金属パッドの面積は、前記第1の開口で露出した前記半導体層の前記上面の面積より大きい、請求項1に記載の表示装置。
- 前記画素構造の各々は、第2の金属層を更に含み、前記第2の金属層は、前記金属パッドとデータ線を含み、前記データ線は、前記第1の金属層に部分的に重なる、請求項1に記載の表示装置。
- 前記ゲート線は、第1の方向に沿って離間して配置され、前記データ線は、第2の方向に沿って離間して配置され、前記第1の方向は、前記第2の方向と異なり、前記画素構造のうちの1つでは、前記半導体層は、前記の対応するデータ線と前記の対応する金属パッドと電気的に接続される、請求項3に記載の表示装置。
- 前記画素構造のうちの1つでは、前記第2の開口は、前記第1の開口と前記データ線との間にある、請求項4に記載の表示装置。
- 前記画素構造のうちの1つでは、前記第2の開口は、前記第1の金属層に部分的に重なる、請求項4に記載の表示装置。
- 前記画素構造のうちの1つでは、前記第1の開口は、第1の幾何中心を有し、前記第2の開口は、第2の幾何中心を有し、前記第1の幾何中心と前記第2の幾何中心との間の接続線と前記ゲート線は、夾角を有し、前記夾角は、0度超90度未満である、請求項4に記載の表示装置。
- 透明基板と、
前記透明基板と前記アレイ基板との間に配置された表示層と、を更に含む、請求項1に記載の表示装置。 - 前記画素構造の各々は、第1の透明電極を更に含み、前記の透明電極は、前記第2の開口を介して前記第2の金属層を電気的に接続する、請求項1に記載の表示装置。
- 前記表示層は、液晶層または有機発光ダイオード層である、請求項8に記載の表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104101901 | 2015-01-21 | ||
TW104101901A TWI577000B (zh) | 2015-01-21 | 2015-01-21 | 顯示裝置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016133811A JP2016133811A (ja) | 2016-07-25 |
JP6816912B2 true JP6816912B2 (ja) | 2021-01-20 |
Family
ID=56407755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016007508A Active JP6816912B2 (ja) | 2015-01-21 | 2016-01-19 | 表示装置 |
Country Status (4)
Country | Link |
---|---|
US (3) | US9772535B2 (ja) |
JP (1) | JP6816912B2 (ja) |
KR (1) | KR101778364B1 (ja) |
TW (1) | TWI577000B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI577000B (zh) * | 2015-01-21 | 2017-04-01 | 群創光電股份有限公司 | 顯示裝置 |
KR20180047584A (ko) * | 2016-10-31 | 2018-05-10 | 엘지디스플레이 주식회사 | 보조 전극을 포함하는 디스플레이 장치 |
CN106502012A (zh) * | 2017-01-03 | 2017-03-15 | 深圳市华星光电技术有限公司 | Ffs模式的阵列基板及其制作方法 |
TWI795632B (zh) * | 2020-03-02 | 2023-03-11 | 友達光電股份有限公司 | 陣列基板 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010043175A1 (en) * | 1996-10-22 | 2001-11-22 | Masahiro Yasukawa | Liquid crystal panel substrate, liquid crystal panel, and electronic equipment and projection type display device both using the same |
JP3463005B2 (ja) * | 1999-07-19 | 2003-11-05 | シャープ株式会社 | 液晶表示装置およびその製造方法 |
KR100475108B1 (ko) * | 2001-12-22 | 2005-03-10 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조 방법 |
JP2003262885A (ja) * | 2002-03-08 | 2003-09-19 | Seiko Epson Corp | 電気光学装置およびその製造方法、電子機器 |
JP4449953B2 (ja) * | 2006-07-27 | 2010-04-14 | エプソンイメージングデバイス株式会社 | 液晶表示装置 |
JP2009021477A (ja) * | 2007-07-13 | 2009-01-29 | Sony Corp | 半導体装置およびその製造方法、ならびに表示装置およびその製造方法 |
WO2010109719A1 (ja) * | 2009-03-27 | 2010-09-30 | シャープ株式会社 | 表示パネルおよび表示装置 |
US8698153B2 (en) * | 2010-06-24 | 2014-04-15 | Sharp Kabushiki Kaisha | Semiconductor device and process for production thereof |
US9996210B2 (en) * | 2011-06-30 | 2018-06-12 | International Business Machines Corporation | Enabling host active element content related actions on a client device within remote presentations |
JP5834705B2 (ja) * | 2011-09-28 | 2015-12-24 | セイコーエプソン株式会社 | 電気光学装置、及び電子機器 |
CN103137616B (zh) * | 2011-11-25 | 2017-04-26 | 上海天马微电子有限公司 | Tft阵列基板及其形成方法、显示面板 |
WO2014054500A1 (ja) * | 2012-10-03 | 2014-04-10 | シャープ株式会社 | 液晶表示装置 |
KR102015873B1 (ko) * | 2013-01-03 | 2019-10-22 | 삼성디스플레이 주식회사 | 표시장치용 백플레인 및 그의 제조 방법 |
KR102007833B1 (ko) * | 2013-04-30 | 2019-08-06 | 엘지디스플레이 주식회사 | 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 |
TWI520399B (zh) * | 2013-05-31 | 2016-02-01 | 群創光電股份有限公司 | 有機發光裝置及其製造方法、以及包含其之影像顯示系統 |
CN103700669A (zh) | 2013-12-19 | 2014-04-02 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
KR101798433B1 (ko) * | 2014-12-31 | 2017-11-17 | 엘지디스플레이 주식회사 | 인셀 터치 액정 디스플레이 장치와 이의 제조방법 |
TWI577000B (zh) * | 2015-01-21 | 2017-04-01 | 群創光電股份有限公司 | 顯示裝置 |
-
2015
- 2015-01-21 TW TW104101901A patent/TWI577000B/zh active
- 2015-06-03 US US14/729,315 patent/US9772535B2/en active Active
- 2015-06-26 KR KR1020150090880A patent/KR101778364B1/ko active IP Right Grant
-
2016
- 2016-01-19 JP JP2016007508A patent/JP6816912B2/ja active Active
-
2017
- 2017-08-21 US US15/681,477 patent/US9977304B2/en active Active
-
2018
- 2018-04-20 US US15/958,052 patent/US10503038B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2016133811A (ja) | 2016-07-25 |
US10503038B2 (en) | 2019-12-10 |
US9772535B2 (en) | 2017-09-26 |
US20170343846A1 (en) | 2017-11-30 |
US20180239182A1 (en) | 2018-08-23 |
KR20160090233A (ko) | 2016-07-29 |
US20160209690A1 (en) | 2016-07-21 |
TW201628169A (zh) | 2016-08-01 |
KR101778364B1 (ko) | 2017-09-13 |
US9977304B2 (en) | 2018-05-22 |
TWI577000B (zh) | 2017-04-01 |
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