JP6810029B2 - 腐食抑制剤及び関連組成物並びに方法 - Google Patents
腐食抑制剤及び関連組成物並びに方法 Download PDFInfo
- Publication number
- JP6810029B2 JP6810029B2 JP2017519872A JP2017519872A JP6810029B2 JP 6810029 B2 JP6810029 B2 JP 6810029B2 JP 2017519872 A JP2017519872 A JP 2017519872A JP 2017519872 A JP2017519872 A JP 2017519872A JP 6810029 B2 JP6810029 B2 JP 6810029B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- weight
- cobalt
- polishing composition
- chemical mechanical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000203 mixture Substances 0.000 title claims description 183
- 239000003112 inhibitor Substances 0.000 title claims description 98
- 230000007797 corrosion Effects 0.000 title claims description 96
- 238000005260 corrosion Methods 0.000 title claims description 96
- 238000000034 method Methods 0.000 title claims description 52
- 238000005498 polishing Methods 0.000 claims description 182
- 239000000758 substrate Substances 0.000 claims description 95
- 239000002245 particle Substances 0.000 claims description 89
- 229910017052 cobalt Inorganic materials 0.000 claims description 87
- 239000010941 cobalt Substances 0.000 claims description 87
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 87
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 50
- 239000000126 substance Substances 0.000 claims description 49
- 229940071089 sarcosinate Drugs 0.000 claims description 36
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 35
- 125000000129 anionic group Chemical group 0.000 claims description 29
- 239000007800 oxidant agent Substances 0.000 claims description 29
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical compound C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 239000008119 colloidal silica Substances 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 12
- 230000001629 suppression Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 239000008365 aqueous carrier Substances 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 229940070782 myristoyl sarcosinate Drugs 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000002401 inhibitory effect Effects 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 2
- -1 phosphate ester Chemical class 0.000 description 54
- 125000001931 aliphatic group Chemical group 0.000 description 35
- 125000000217 alkyl group Chemical group 0.000 description 25
- 150000003839 salts Chemical class 0.000 description 24
- 229920000642 polymer Polymers 0.000 description 20
- 239000000243 solution Substances 0.000 description 20
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical class OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 18
- 239000002253 acid Substances 0.000 description 17
- 239000010410 layer Substances 0.000 description 17
- 229920001400 block copolymer Polymers 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 150000003862 amino acid derivatives Chemical class 0.000 description 15
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 14
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 14
- 229940024606 amino acid Drugs 0.000 description 13
- 230000000694 effects Effects 0.000 description 13
- 239000004094 surface-active agent Substances 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 12
- 229910019142 PO4 Inorganic materials 0.000 description 12
- 239000002280 amphoteric surfactant Substances 0.000 description 12
- 150000007942 carboxylates Chemical class 0.000 description 12
- 235000014113 dietary fatty acids Nutrition 0.000 description 12
- 239000000194 fatty acid Substances 0.000 description 12
- 229930195729 fatty acid Natural products 0.000 description 12
- 230000001590 oxidative effect Effects 0.000 description 12
- 235000021317 phosphate Nutrition 0.000 description 12
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical compound OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 description 11
- 125000003342 alkenyl group Chemical group 0.000 description 11
- 229920001577 copolymer Polymers 0.000 description 11
- 108700004121 sarkosyl Proteins 0.000 description 11
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 11
- BACYUWVYYTXETD-UHFFFAOYSA-N N-Lauroylsarcosine Chemical compound CCCCCCCCCCCC(=O)N(C)CC(O)=O BACYUWVYYTXETD-UHFFFAOYSA-N 0.000 description 10
- 239000003082 abrasive agent Substances 0.000 description 10
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 10
- 239000012964 benzotriazole Substances 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 150000007513 acids Chemical class 0.000 description 9
- 239000003945 anionic surfactant Substances 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 9
- 239000010452 phosphate Substances 0.000 description 9
- 239000003381 stabilizer Substances 0.000 description 9
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 8
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 8
- 229910052939 potassium sulfate Inorganic materials 0.000 description 8
- 235000011151 potassium sulphates Nutrition 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 description 7
- 239000012141 concentrate Substances 0.000 description 7
- 230000007613 environmental effect Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 description 7
- 230000003068 static effect Effects 0.000 description 7
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 6
- 239000003139 biocide Substances 0.000 description 6
- 230000002209 hydrophobic effect Effects 0.000 description 6
- 230000005764 inhibitory process Effects 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 6
- 125000001273 sulfonato group Chemical class [O-]S(*)(=O)=O 0.000 description 6
- 150000001413 amino acids Chemical class 0.000 description 5
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 229950000886 isetionate Drugs 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 5
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 4
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 4
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- OWMVSZAMULFTJU-UHFFFAOYSA-N bis-tris Chemical compound OCCN(CCO)C(CO)(CO)CO OWMVSZAMULFTJU-UHFFFAOYSA-N 0.000 description 4
- 239000000872 buffer Substances 0.000 description 4
- 229930195712 glutamate Natural products 0.000 description 4
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 4
- 229960002885 histidine Drugs 0.000 description 4
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical group OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 4
- SUMDYPCJJOFFON-UHFFFAOYSA-N isethionic acid Chemical class OCCS(O)(=O)=O SUMDYPCJJOFFON-UHFFFAOYSA-N 0.000 description 4
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 4
- 150000003014 phosphoric acid esters Chemical class 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 3
- 239000004471 Glycine Substances 0.000 description 3
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000003863 ammonium salts Chemical class 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- JXLHNMVSKXFWAO-UHFFFAOYSA-N azane;7-fluoro-2,1,3-benzoxadiazole-4-sulfonic acid Chemical compound N.OS(=O)(=O)C1=CC=C(F)C2=NON=C12 JXLHNMVSKXFWAO-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229960003237 betaine Drugs 0.000 description 3
- 230000003115 biocidal effect Effects 0.000 description 3
- 229910000428 cobalt oxide Inorganic materials 0.000 description 3
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 125000000623 heterocyclic group Chemical group 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 3
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 239000001120 potassium sulphate Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- GYSCBCSGKXNZRH-UHFFFAOYSA-N 1-benzothiophene-2-carboxamide Chemical compound C1=CC=C2SC(C(=O)N)=CC2=C1 GYSCBCSGKXNZRH-UHFFFAOYSA-N 0.000 description 2
- TWJNQYPJQDRXPH-UHFFFAOYSA-N 2-cyanobenzohydrazide Chemical compound NNC(=O)C1=CC=CC=C1C#N TWJNQYPJQDRXPH-UHFFFAOYSA-N 0.000 description 2
- 125000006539 C12 alkyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N Decanoic acid Natural products CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 235000021360 Myristic acid Nutrition 0.000 description 2
- TUNFSRHWOTWDNC-UHFFFAOYSA-N Myristic acid Natural products CCCCCCCCCCCCCC(O)=O TUNFSRHWOTWDNC-UHFFFAOYSA-N 0.000 description 2
- QIAFMBKCNZACKA-UHFFFAOYSA-N N-benzoylglycine Chemical compound OC(=O)CNC(=O)C1=CC=CC=C1 QIAFMBKCNZACKA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 235000021314 Palmitic acid Nutrition 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- QNAYBMKLOCPYGJ-UHFFFAOYSA-M alaninate Chemical compound CC(N)C([O-])=O QNAYBMKLOCPYGJ-UHFFFAOYSA-M 0.000 description 2
- 229940045714 alkyl sulfonate alkylating agent Drugs 0.000 description 2
- 125000005227 alkyl sulfonate group Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000001588 bifunctional effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000004181 carboxyalkyl group Chemical group 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 229940071124 cocoyl glutamate Drugs 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- WJJMNDUMQPNECX-UHFFFAOYSA-N dipicolinic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=N1 WJJMNDUMQPNECX-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 2
- 229940071145 lauroyl sarcosinate Drugs 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005555 metalworking Methods 0.000 description 2
- PMRYVIKBURPHAH-UHFFFAOYSA-N methimazole Chemical compound CN1C=CNC1=S PMRYVIKBURPHAH-UHFFFAOYSA-N 0.000 description 2
- 239000000693 micelle Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 2
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 150000003009 phosphonic acids Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004584 polyacrylic acid Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- LLKGTXLYJMUQJX-UHFFFAOYSA-M sodium;3-[2-carboxyethyl(dodecyl)amino]propanoate Chemical compound [Na+].CCCCCCCCCCCCN(CCC(O)=O)CCC([O-])=O LLKGTXLYJMUQJX-UHFFFAOYSA-M 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 239000012085 test solution Substances 0.000 description 2
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- DZSVIVLGBJKQAP-UHFFFAOYSA-N 1-(2-methyl-5-propan-2-ylcyclohex-2-en-1-yl)propan-1-one Chemical compound CCC(=O)C1CC(C(C)C)CC=C1C DZSVIVLGBJKQAP-UHFFFAOYSA-N 0.000 description 1
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 description 1
- OVSKIKFHRZPJSS-UHFFFAOYSA-N 2,4-D Chemical compound OC(=O)COC1=CC=C(Cl)C=C1Cl OVSKIKFHRZPJSS-UHFFFAOYSA-N 0.000 description 1
- PRAMZQXXPOLCIY-UHFFFAOYSA-N 2-(2-methylprop-2-enoyloxy)ethanesulfonic acid Chemical compound CC(=C)C(=O)OCCS(O)(=O)=O PRAMZQXXPOLCIY-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 1
- DLQDXIWHWLZYSG-UHFFFAOYSA-N 3-ethyldecylphosphonic acid Chemical compound CCCCCCCC(CC)CCP(O)(O)=O DLQDXIWHWLZYSG-UHFFFAOYSA-N 0.000 description 1
- YEPACHVPVZZBRT-UHFFFAOYSA-N 3-phenyl-2-sulfoprop-2-enoic acid Chemical compound S(=O)(=O)(O)C(C(=O)O)=CC1=CC=CC=C1 YEPACHVPVZZBRT-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 125000006538 C11 alkyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000004343 Calcium peroxide Substances 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical group OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- SPAGIJMPHSUYSE-UHFFFAOYSA-N Magnesium peroxide Chemical compound [Mg+2].[O-][O-] SPAGIJMPHSUYSE-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- FSVCELGFZIQNCK-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)glycine Chemical compound OCCN(CCO)CC(O)=O FSVCELGFZIQNCK-UHFFFAOYSA-N 0.000 description 1
- JWGGSJFIGIGFSQ-UHFFFAOYSA-N N-dodecanoylglycine Chemical compound CCCCCCCCCCCC(=O)NCC(O)=O JWGGSJFIGIGFSQ-UHFFFAOYSA-N 0.000 description 1
- KVTFEOAKFFQCCX-UHFFFAOYSA-N N-hexadecanoylglycine Chemical compound CCCCCCCCCCCCCCCC(=O)NCC(O)=O KVTFEOAKFFQCCX-UHFFFAOYSA-N 0.000 description 1
- DYUGTPXLDJQBRB-UHFFFAOYSA-N N-myristoylglycine Chemical compound CCCCCCCCCCCCCC(=O)NCC(O)=O DYUGTPXLDJQBRB-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 108010077895 Sarcosine Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- 150000008052 alkyl sulfonates Chemical class 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 125000004103 aminoalkyl group Chemical group 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 229920006318 anionic polymer Polymers 0.000 description 1
- 239000007998 bicine buffer Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- HXNZTJULPKRNPR-UHFFFAOYSA-N borinine Chemical compound B1=CC=CC=C1 HXNZTJULPKRNPR-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- LHJQIRIGXXHNLA-UHFFFAOYSA-N calcium peroxide Chemical compound [Ca+2].[O-][O-] LHJQIRIGXXHNLA-UHFFFAOYSA-N 0.000 description 1
- 235000019402 calcium peroxide Nutrition 0.000 description 1
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011437 continuous method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005595 deprotonation Effects 0.000 description 1
- 238000010537 deprotonation reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- VTIIJXUACCWYHX-UHFFFAOYSA-L disodium;carboxylatooxy carbonate Chemical compound [Na+].[Na+].[O-]C(=O)OOC([O-])=O VTIIJXUACCWYHX-UHFFFAOYSA-L 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- SVMUEEINWGBIPD-UHFFFAOYSA-N dodecylphosphonic acid Chemical compound CCCCCCCCCCCCP(O)(O)=O SVMUEEINWGBIPD-UHFFFAOYSA-N 0.000 description 1
- 231100000673 dose–response relationship Toxicity 0.000 description 1
- ZJXZSIYSNXKHEA-UHFFFAOYSA-N ethyl dihydrogen phosphate Chemical compound CCOP(O)(O)=O ZJXZSIYSNXKHEA-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002332 glycine derivatives Chemical group 0.000 description 1
- 235000019589 hardness Nutrition 0.000 description 1
- SSILHZFTFWOUJR-UHFFFAOYSA-M hexadecane-1-sulfonate Chemical compound CCCCCCCCCCCCCCCCS([O-])(=O)=O SSILHZFTFWOUJR-UHFFFAOYSA-M 0.000 description 1
- SSILHZFTFWOUJR-UHFFFAOYSA-N hexadecane-1-sulfonic acid Chemical compound CCCCCCCCCCCCCCCCS(O)(=O)=O SSILHZFTFWOUJR-UHFFFAOYSA-N 0.000 description 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- DLHSXQSAISCVNN-UHFFFAOYSA-M hydroxy(oxo)cobalt Chemical compound O[Co]=O DLHSXQSAISCVNN-UHFFFAOYSA-M 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- MGIYRDNGCNKGJU-UHFFFAOYSA-N isothiazolinone Chemical compound O=C1C=CSN1 MGIYRDNGCNKGJU-UHFFFAOYSA-N 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 229940071085 lauroyl glutamate Drugs 0.000 description 1
- 125000000400 lauroyl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000005645 linoleyl group Chemical group 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229960004995 magnesium peroxide Drugs 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229940046947 oleth-10 phosphate Drugs 0.000 description 1
- 229940093440 oleth-3-phosphate Drugs 0.000 description 1
- 125000001117 oleyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])/C([H])=C([H])\C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 230000000399 orthopedic effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 229940081066 picolinic acid Drugs 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001983 poloxamer Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000582 polyisocyanurate Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- JEMLSRUODAIULV-UHFFFAOYSA-M potassium;2-[dodecanoyl(methyl)amino]acetate Chemical compound [K+].CCCCCCCCCCCC(=O)N(C)CC([O-])=O JEMLSRUODAIULV-UHFFFAOYSA-M 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229940043230 sarcosine Drugs 0.000 description 1
- 239000002455 scale inhibitor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229940045872 sodium percarbonate Drugs 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 125000003696 stearoyl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- ZTWTYVWXUKTLCP-UHFFFAOYSA-N vinylphosphonic acid Chemical compound OP(O)(=O)C=C ZTWTYVWXUKTLCP-UHFFFAOYSA-N 0.000 description 1
- NLVXSWCKKBEXTG-UHFFFAOYSA-N vinylsulfonic acid Chemical compound OS(=O)(=O)C=C NLVXSWCKKBEXTG-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/08—Anti-corrosive paints
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
Description
本出願は、米国特許仮出願第62/066,484号(2014年10月21日出願)及び米国特許仮出願第62/198,013号(2015年7月28日出願)の利益を主張するものであり、これらは参照することにより組み入れられたものとする。
1つの態様では、発明は金属を含む基板の腐食抑制方法を提供する。方法は、両性界面活性剤、スルホナート、ホスホナート、カルボキシラート、アミノ酸誘導体、リン酸エステル、イセチオナート、スルファート、スルホスクシナート、スルホシンナマート、またはそれらの任意の組み合わせを含む水性組成物と基板を接触させることを備える。これらの各原料種の例が本明細書で提供されており、当業者には容易に理解されるであろう。いくつかの実施形態では、例えばコバルトを含む基板に関連する応用では抑制剤が約3〜約8.5のpHを有する水性組成物に含まれる。また、発明は以下の本明細書で更に記載したように、化学機械研磨組成物及び基板の研磨方法も提供する。
腐食抑制方法は、様々な金属に対して有用性を有し、多様な業界にわたり様々な用途に使用することができる。いくつかの実施形態では、腐食抑制方法は金属がコバルトまたはコバルト含有合金の場合に使用することができる。基板は腐食抑制が必要な任意の適切な基板とすることができる。例として、制限することを意図しているわけではないが、例えば、基板が集積回路または他の電子デバイスを具現する半導体ウエハーである場合、腐食抑制方法を本明細書で記載したような化学機械研磨で使用することができる。ウエハー、一般的には、例えば金属、金属酸化物、金属窒化物、金属複合材、金属合金、低誘電材料またはそれらの組み合わせを含む、または同からなる。
別の態様では、発明は(a)アニオン性粒子を含む研磨剤、(b)速度促進剤、(c)両性界面活性剤、スルホナート、ホスホナート、カルボキシラート、アミノ酸誘導体、リン酸エステル、イセチオナート、スルファート、スルホスクシナート、スルホシンナマート、またはそれらの任意の組み合わせ、(d)酸化剤、及び(e)水性担体を含む、同からなる、若しくは同から実質的になる化学機械研磨(CMP)組成物を提供する。
研磨組成物は研摩剤(すなわち、1つ以上の研磨剤)を含む。研摩剤は任意の任意の好適な研摩剤または粒子形態で研摩剤を組み合わせることができる。研磨粒子は、好ましい実施形態で望ましくはアニオン性である。例えば、研磨粒子はアルミナ粒子、シリカ粒子またはそれらの組み合わせとすることができる。いくつかの実施形態では、研磨粒子がアルファアルミナ粒子等のアルミナ粒子であり、またはそれらを含み、少なくとも一部のアルファアルミナ粒子が負電荷重合体または共重合体で被覆されている。より好ましくは、研磨粒子はコロイダルシリカ粒子(望ましくはアニオン性コロイダルシリカ粒子)等のシリカ粒子であり、または同シリカ粒子を含む。
好ましい実施形態に従って、腐食抑制剤(例えば、コバルトの場合または他の金属の場合)は1つ以上の両性界面活性剤、スルホナート、ホスホナート、カルボキシラート、アミノ酸誘導体(例えば、脂肪酸アミノ等のアミノ酸アミド)、リン酸エステル、イセチオナート、サルフェート、スルホサクシネート、スルホシンナマートまたはそれらの組み合わせである。いくつかの実施形態では、腐食抑制剤が親水性頭部基及び疎水性尾部を有し、表面を活性状態にすることから腐食抑制剤は界面活性剤とみなせる。
表1
研磨組成物は適切な速度促進剤を含むことができる。速度促進剤は研磨組成物による基板からの材料の除去速度を改善する物質または物質の組み合わせである。速度促進剤は、例えばカチオン性速度促進剤、両性イオン性速度促進剤、アニオン性速度促進剤またはそれらの任意な組み合わせである場合またはそれらを含む場合がある。いくつかの実施形態では、速度促進剤がアニオン性速度促進剤を含む、アニオン性速度促進剤からなる、またはアニオン性速度促進剤から実質的になる。例えば、いくつかの実施形態では、速度促進剤としてホスホン酸、N-複素環式化合物またはそれらの組み合わせが挙げられる。
いくつかの実施形態では研磨組成物は、限定はされないが、コバルト等の金属を酸化する酸化剤を含む。酸化剤は、研磨組成物のpHでコバルトを酸化するのに十分な大きさの酸化電位を有する任意の適切な酸化剤でありうる。好ましい実施形態では酸化剤が過酸化水素である。他の好適な酸化剤の例として、過硫酸塩(例えば、過硫酸アンモニウム)、第二鉄塩(例えば、硝酸第二鉄)、無機過酸化物、有機過酸化物およびそれらの組み合わせが挙げられる。無機過酸化物として、過炭酸ナトリウム、過酸化カルシウム及び過酸化マグネシウムが挙げられる。酸化剤は、上述した一つ以上の好適な酸化剤の例を含む、これらの例から実質的になる、またはこれらの例からなる。
研磨組成物は任意の好適な技術によって調製することができ、その多くが当業者に公知である。研磨組成物は回分または連続法で調製することができる。一般に、研磨組成物は任意の順序で成分を組み合わせことによって調製することができる。本明細書で使用されるとき、「成分」という用語は、個別の原料(例えば、研摩剤、速度促進剤、腐食抑制剤、酸化剤など)並びに原料(例えば、研摩剤、速度促進剤、腐食抑制剤、酸化剤など)の任意の組合せを含む。
別の態様では、(i)基板を提供する、(ii)研磨パッドを提供する、(iii)化学機械研磨組成物を提供する、(iv)基板と研磨パッド及び化学機械研磨組成物を接触させる、及び(v)基板に対して研磨パッド及び化学機械研磨組成物を動かして少なくとも基板の一部を摩滅させて、基板を研磨することを含む、またはこれらからなる、若しくはこれらから実質的になる基板の研磨方法を提供する。研磨組成物は、本明細書に記載したように、(a)アニオン性粒子を含む研磨剤、(b)速度促進剤、(c)両性界面活性剤、スルホナート、ホスホナート、カルボキシラート、アミノ酸誘導体(例えば、脂肪酸アミノ酸アミド)、リン酸エステル、イセチオナート、サルフェート、スルホサクシネート、スルホシンナマート、またはそれらの任意な組み合わせを含む腐食抑制剤、(d)酸化剤、及び (e)水性担体を含む、これらからなる、またはこれらから実質的になる。
この例は、活性環境条件下のもとでの抑制剤組成物の腐食抑制効力を示す。特に、抑制剤が存在しない対照溶液との比較で、コバルト(Co)基板の静的エッチ速度(SER)を様々なpHに亘って種々の抑制剤溶液に曝露した後に測定した。静的エッチングは、試験したpHレベルで水へのコバルト溶解の大きさ示す手法であり、高値は望ましくない。また、追加的腐食性が必要な場合、すなわちpH3以上で所望の活性環境条件を提供するために溶液に硫酸カリウム(K2SO4 )も含めた。
表2
表3
本実施例は実施例1の条件より低活性の環境条件下で抑制剤組成物の腐食抑制効力を示す。特に、SER実験は、硫酸カリウム塩がいずれの溶液にも含まれないこと以外は実施例1に記載したように実行した。
表4
本実施例は、活性条件下で種々のサルコシナート抑制剤組成物について腐食抑制効力の用量依存の役割を示す。
本実施例は、種々の腐食抑制剤を含む研磨組成物が効果的なコバルト除去速度を提供したことを示す。
本実施例は、種々の腐食抑制剤を含んだ研磨組成物が効果的なコバルト除去速度を提供したことを示す。
本実施例は、0.02mMの濃度で硫酸カリウム (K2SO4)塩を加えた以外は先に実施例1で記載した試験手順及び条件下での選択した抑制剤溶液のpH7でのエッチ速度を示す。抑制剤を含まない溶液または多様な濃度のBTAを含む溶液をN-ラウロイルサルコシナートを含む溶液と比較した。試験した抑制剤溶液を表5に示す。
表5
Claims (12)
- 金属を含む基板の腐食抑制方法であって、前記方法が抑制剤を含む水性組成物と基板とを接触させることを含み、
前記抑制剤が、N‐ココイルサルコシナート、N-ステアロイルサルコシナート、N-オレオイルサルコシナート、N-ミリストイルサルコシナート、またはそれらの任意な組み合わせであり、
前記金属がコバルトまたはコバルトを含む合金である、方法。 - 前記基板が半導体ウエハーである、請求項1に記載の方法。
- 前記抑制剤が60g/mol〜500g/molの分子量を有する、請求項1または2に記載の方法。
- 前記抑制剤が0.004〜0.010重量%の量で存在する、請求項1−3のいずれか一項に記載の方法。
- 基材を研磨するための化学機械研磨組成物であって、
(a)研磨剤
(b)速度促進剤
(c)腐食抑制剤、前記抑制剤は、N‐ココイルサルコシナート、N-ステアロイルサルコシナート、N-オレオイルサルコシナート、N-ミリストイルサルコシナート、またはそれらの任意な組み合わせである、
(d)酸化剤、及び
(e)水性担体
を含み、前記基材がコバルトまたはコバルト含有合金を含む、化学機械研磨組成物。 - 前記酸化剤はコバルトを酸化する化合物である、請求項5に記載の化学機械研磨組成物。
- 前記抑制剤は0.004重量%の〜0.010重量%の量で存在する、請求項5または6に記載の化学機械研磨組成物。
- 前記研磨剤はアルミナ粒子、シリカ粒子、またはそれらの組み合わせである、請求項5−7のいずれか一項に記載の化学機械研磨組成物。
- 前記研磨剤はシリカ粒子を含み、かつ該シリカ粒子がコロイダルシリカ粒子である、請求項8に記載の化学機械研磨組成物。
- 前記コロイダルシリカ粒子はアニオン性コロイダルシリカ粒子である、請求項9に記載の化学機械研磨組成物。
- 前記研磨剤はコロイダルシリカ粒子を含み、研磨組成物のpHは3〜8.5である、請求項5に記載の化学機械研磨組成物。
- (i) 基板を提供し、該基板がコバルト層を含み、
(ii) 研磨パッドを提供し、
(iii)請求項5−11のいずれか一項に記載の化学機械研磨組成物を提供し、
(iv)前記研磨パッド及び前記化学機械研磨組成物と前記基板を接触させる、及び
(v)前記基板に対して前記研磨パッドと前記化学機械研磨組成物を動かしてコバルト層の少なくとも一部を擦過させて前記基板を研磨することを備える基板の研磨方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462066484P | 2014-10-21 | 2014-10-21 | |
US62/066,484 | 2014-10-21 | ||
US201562198013P | 2015-07-28 | 2015-07-28 | |
US62/198,013 | 2015-07-28 | ||
PCT/US2015/056744 WO2016065057A1 (en) | 2014-10-21 | 2015-10-21 | Corrosion inhibitors and related compositions and methods |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2018500456A JP2018500456A (ja) | 2018-01-11 |
JP2018500456A5 JP2018500456A5 (ja) | 2020-04-09 |
JP6810029B2 true JP6810029B2 (ja) | 2021-01-06 |
Family
ID=55748310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017519872A Active JP6810029B2 (ja) | 2014-10-21 | 2015-10-21 | 腐食抑制剤及び関連組成物並びに方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10124464B2 (ja) |
EP (1) | EP3209815B1 (ja) |
JP (1) | JP6810029B2 (ja) |
KR (1) | KR102477843B1 (ja) |
CN (2) | CN116288366A (ja) |
TW (1) | TWI611049B (ja) |
WO (1) | WO2016065057A1 (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG11201808692QA (en) * | 2016-04-27 | 2018-11-29 | Basf Se | Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates |
TWI660017B (zh) | 2016-07-14 | 2019-05-21 | 卡博特微電子公司 | 用於鈷化學機械拋光(cmp)之替代氧化劑 |
US10294399B2 (en) * | 2017-01-05 | 2019-05-21 | Cabot Microelectronics Corporation | Composition and method for polishing silicon carbide |
WO2018159530A1 (ja) * | 2017-02-28 | 2018-09-07 | 富士フイルム株式会社 | 研磨液、研磨液の製造方法、研磨液原液、研磨液原液収容体、化学的機械的研磨方法 |
US10077382B1 (en) | 2017-03-06 | 2018-09-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for polishing cobalt-containing substrate |
US10233356B2 (en) | 2017-03-06 | 2019-03-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing slurry for cobalt-containing substrate |
JP7209620B2 (ja) * | 2017-03-14 | 2023-01-20 | 株式会社フジミインコーポレーテッド | 研磨用組成物、その製造方法ならびにこれを用いた研磨方法および基板の製造方法 |
JP6901297B2 (ja) * | 2017-03-22 | 2021-07-14 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
CN110914476A (zh) * | 2017-08-03 | 2020-03-24 | 日华化学株式会社 | 金属用洗净剂组合物 |
CA3072899A1 (en) * | 2017-09-07 | 2019-03-14 | Stepan Company | Corrosion inhibitors for oilfield applications |
US20190085205A1 (en) * | 2017-09-15 | 2019-03-21 | Cabot Microelectronics Corporation | NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS |
US10647887B2 (en) * | 2018-01-08 | 2020-05-12 | Cabot Microelectronics Corporation | Tungsten buff polishing compositions with improved topography |
US20190211228A1 (en) * | 2018-01-09 | 2019-07-11 | Cabot Microelectronics Corporation | Tungsten bulk polishing method with improved topography |
US11021786B2 (en) * | 2018-12-04 | 2021-06-01 | Texas Instruments Incorporated | Copper passivation |
US10763119B2 (en) * | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
US10759970B2 (en) * | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
DE102019104019A1 (de) * | 2019-02-18 | 2020-08-20 | Johann Wolfgang Goethe-Universität | Gegen Korrosion geschütztes Erzeugnis, Verfahren zur Herstellung und Verwendung einer Aminosäureverbindung zum Korrosionsschutz |
US11001733B2 (en) * | 2019-03-29 | 2021-05-11 | Fujimi Incorporated | Compositions for polishing cobalt and low-K material surfaces |
US10947413B2 (en) * | 2019-03-29 | 2021-03-16 | Rohm And Haas Electronic Materials Cmp Holdings | Chemical mechanical polishing method for cobalt with high cobalt removal rates and reduced cobalt corrosion |
TW202043397A (zh) * | 2019-04-17 | 2020-12-01 | 美商卡博特微電子公司 | 用於鎢擦光應用之表面塗覆研磨顆粒 |
US11292938B2 (en) * | 2019-09-11 | 2022-04-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films |
TWI769619B (zh) * | 2020-01-07 | 2022-07-01 | 美商Cmc材料股份有限公司 | 經衍生的聚胺基酸 |
TW202214795A (zh) * | 2020-07-28 | 2022-04-16 | 美商Cmc材料股份有限公司 | 包含陰離子性及陽離子性抑制劑之cmp組合物 |
US11680186B2 (en) | 2020-11-06 | 2023-06-20 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
CN112501617B (zh) * | 2020-11-12 | 2021-11-23 | 陕西科技大学 | 一种双疏水链改性l-组氨酸缓蚀剂及其制备方法和应用 |
CN113881347B (zh) * | 2021-10-15 | 2023-01-31 | 深圳市科玺化工有限公司 | 一种硅晶圆用化学机械精抛液 |
CN114106702B (zh) * | 2021-12-13 | 2022-11-18 | 广东凯盟钝化防锈技术有限公司 | 一种不锈钢流体粗抛蜡及其制备方法 |
Family Cites Families (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4711735A (en) | 1986-09-12 | 1987-12-08 | Gulley Harold J | Coolant additive with corrosion inhibitive and scale preventative properties |
US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
US5316573A (en) | 1992-03-12 | 1994-05-31 | International Business Machines Corporation | Corrosion inhibition with CU-BTA |
US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
JP3329572B2 (ja) | 1994-04-15 | 2002-09-30 | 福田金属箔粉工業株式会社 | 印刷回路用銅箔およびその表面処理方法 |
US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
US6585933B1 (en) | 1999-05-03 | 2003-07-01 | Betzdearborn, Inc. | Method and composition for inhibiting corrosion in aqueous systems |
GB9924358D0 (en) | 1999-10-14 | 1999-12-15 | Brad Chem Technology Ltd | Corrosion inhibiting compositions |
JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
US6936543B2 (en) * | 2002-06-07 | 2005-08-30 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
JP2004172606A (ja) | 2002-11-08 | 2004-06-17 | Sumitomo Chem Co Ltd | 金属研磨材組成物及び研磨方法 |
CN1842577A (zh) * | 2003-06-06 | 2006-10-04 | 应用材料公司 | 用于抛光导电材料的抛光组合物和方法 |
US7300603B2 (en) * | 2003-08-05 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers |
JP2005244123A (ja) * | 2004-02-27 | 2005-09-08 | Fujimi Inc | 研磨用組成物 |
US7161247B2 (en) * | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
TW200618108A (en) * | 2004-09-07 | 2006-06-01 | Phifer Smith Corp | Copper processing using an ozone-solvent solution |
US7988878B2 (en) * | 2004-09-29 | 2011-08-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier slurry for chemical mechanical polishing |
US20070144915A1 (en) * | 2005-12-22 | 2007-06-28 | Applied Materials, Inc. | Process and composition for passivating a substrate during electrochemical mechanical polishing |
US7326750B1 (en) * | 2006-10-12 | 2008-02-05 | Kivanc Isik | Expanded nanoclays and method of producing such expanded nanoclays |
US7931714B2 (en) | 2007-10-08 | 2011-04-26 | Uwiz Technology Co., Ltd. | Composition useful to chemical mechanical planarization of metal |
US8435421B2 (en) * | 2007-11-27 | 2013-05-07 | Cabot Microelectronics Corporation | Metal-passivating CMP compositions and methods |
TW200925326A (en) * | 2007-12-06 | 2009-06-16 | Uwiz Technology Co Ltd | Sarcosine compound for using as corrosion inhibitor |
US8337716B2 (en) * | 2008-01-23 | 2012-12-25 | Uwiz Technology Co., Ltd. | Sarcosine compound used as corrosion inhibitor |
KR101481573B1 (ko) | 2008-02-12 | 2015-01-14 | 삼성전자주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 이를 이용한화학적 기계적 연마 방법 |
CN101525563B (zh) | 2008-03-03 | 2011-04-13 | 盟智科技股份有限公司 | 用于后研磨清洁剂的腐蚀抑制剂 |
CN101580700B (zh) | 2008-05-16 | 2015-08-19 | 盟智科技股份有限公司 | 化学机械研磨的组成物 |
KR20100001785A (ko) * | 2008-06-27 | 2010-01-06 | 유위즈 테크놀로지 컴퍼니 리미티드 | 화학기계 연마 조성물 |
US8722592B2 (en) | 2008-07-25 | 2014-05-13 | Wincom, Inc. | Use of triazoles in reducing cobalt leaching from cobalt-containing metal working tools |
US8540893B2 (en) | 2008-08-04 | 2013-09-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
US20100193728A1 (en) * | 2008-08-05 | 2010-08-05 | Song-Yuan Chang | Chemical Mechanical Polishing Composition |
US8071479B2 (en) | 2008-12-11 | 2011-12-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
TWI454561B (zh) | 2008-12-30 | 2014-10-01 | Uwiz Technology Co Ltd | A polishing composition for planarizing the metal layer |
US8222145B2 (en) * | 2009-09-24 | 2012-07-17 | Dupont Air Products Nanomaterials, Llc | Method and composition for chemical mechanical planarization of a metal-containing substrate |
WO2011078982A1 (en) | 2009-12-23 | 2011-06-30 | Lam Research Corporation | Post deposition wafer cleaning formulation |
WO2011094568A2 (en) | 2010-01-29 | 2011-08-04 | Advanced Technology Materials, Inc. | Cleaning agent for semiconductor provided with metal wiring |
JP5858597B2 (ja) | 2010-01-29 | 2016-02-10 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | タングステン配線半導体用洗浄剤 |
WO2011152966A2 (en) * | 2010-06-01 | 2011-12-08 | Applied Materials, Inc. | Chemical planarization of copper wafer polishing |
KR20120019242A (ko) * | 2010-08-25 | 2012-03-06 | 삼성전자주식회사 | 연마용 슬러리 및 이를 이용하는 반도체 장치의 제조 방법 |
JPWO2012073909A1 (ja) | 2010-11-29 | 2014-05-19 | 和光純薬工業株式会社 | 銅配線用基板洗浄剤及び銅配線半導体基板の洗浄方法 |
WO2012127398A1 (en) * | 2011-03-22 | 2012-09-27 | Basf Se | A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine |
TWI548727B (zh) * | 2011-03-22 | 2016-09-11 | 巴斯夫歐洲公司 | 包含兩種抗蝕劑的化學機械研磨(cmp)組成物 |
EP2502969A1 (en) * | 2011-03-22 | 2012-09-26 | Basf Se | A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors |
CN102304327A (zh) * | 2011-07-05 | 2012-01-04 | 复旦大学 | 一种基于金属Co的抛光工艺的抛光液 |
JP6051632B2 (ja) * | 2011-07-20 | 2016-12-27 | 日立化成株式会社 | 研磨剤及び基板の研磨方法 |
US8865013B2 (en) | 2011-08-15 | 2014-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing tungsten |
US20130186850A1 (en) | 2012-01-24 | 2013-07-25 | Applied Materials, Inc. | Slurry for cobalt applications |
EP2814895A4 (en) * | 2012-02-15 | 2015-10-07 | Entegris Inc | POST-CMP DISPOSAL USING COMPOSITIONS AND USE PROCESSES |
TWI456013B (zh) | 2012-04-10 | 2014-10-11 | Uwiz Technology Co Ltd | 研磨液組成物 |
US8717710B2 (en) | 2012-05-08 | 2014-05-06 | HGST Netherlands, B.V. | Corrosion-resistant bit patterned media (BPM) and discrete track media (DTM) and methods of production thereof |
US8980750B2 (en) * | 2012-07-06 | 2015-03-17 | Basf Se | Chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and a carbonate salt |
CN102796458B (zh) * | 2012-07-17 | 2014-04-23 | 清华大学 | 化学机械抛光水性组合物及钛基片化学机械抛光工艺方法 |
CN104919575B (zh) | 2013-01-11 | 2018-09-18 | 应用材料公司 | 化学机械抛光设备及方法 |
DE112014001038T5 (de) | 2013-02-28 | 2015-11-26 | Fujimi Incorporated | Polieraufschlämmung zur Kobaltentfernung |
US8865635B1 (en) * | 2013-04-09 | 2014-10-21 | S.C. Johnson & Son, Inc. | Aqueous-based cleaning composition with a water-insoluble, fatty alcohol-based builder |
US10358579B2 (en) | 2013-12-03 | 2019-07-23 | Cabot Microelectronics Corporation | CMP compositions and methods for polishing nickel phosphorous surfaces |
EP3112436A4 (en) * | 2014-02-26 | 2017-02-22 | Fujimi Incorporated | Polishing composition |
US10217645B2 (en) * | 2014-07-25 | 2019-02-26 | Versum Materials Us, Llc | Chemical mechanical polishing (CMP) of cobalt-containing substrate |
-
2015
- 2015-10-21 CN CN202310169002.2A patent/CN116288366A/zh active Pending
- 2015-10-21 EP EP15853494.1A patent/EP3209815B1/en active Active
- 2015-10-21 KR KR1020177013244A patent/KR102477843B1/ko active IP Right Grant
- 2015-10-21 CN CN201580057443.7A patent/CN107148496A/zh active Pending
- 2015-10-21 TW TW104134573A patent/TWI611049B/zh active
- 2015-10-21 US US14/919,404 patent/US10124464B2/en active Active
- 2015-10-21 WO PCT/US2015/056744 patent/WO2016065057A1/en active Application Filing
- 2015-10-21 JP JP2017519872A patent/JP6810029B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
EP3209815A1 (en) | 2017-08-30 |
US10124464B2 (en) | 2018-11-13 |
TWI611049B (zh) | 2018-01-11 |
US20160107289A1 (en) | 2016-04-21 |
KR20170068584A (ko) | 2017-06-19 |
EP3209815B1 (en) | 2021-12-29 |
KR102477843B1 (ko) | 2022-12-16 |
TW201629269A (zh) | 2016-08-16 |
EP3209815A4 (en) | 2018-08-01 |
CN116288366A (zh) | 2023-06-23 |
CN107148496A (zh) | 2017-09-08 |
JP2018500456A (ja) | 2018-01-11 |
WO2016065057A1 (en) | 2016-04-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6810029B2 (ja) | 腐食抑制剤及び関連組成物並びに方法 | |
US9944828B2 (en) | Slurry for chemical mechanical polishing of cobalt | |
JP6110444B2 (ja) | コバルト含有基板の化学的機械的研磨(cmp) | |
KR101165921B1 (ko) | 텅스텐-함유 기판의 연마 방법 | |
TW201708451A (zh) | 低淺盤效應銅化學機械平坦化 | |
KR101173753B1 (ko) | 구리-부동태화 cmp 조성물 및 방법 | |
JP6603234B2 (ja) | タングステン材料のcmp用組成物及び方法 | |
JPWO2008013226A1 (ja) | 研磨組成物 | |
JP6646051B2 (ja) | コバルト研磨促進剤 | |
TW200811276A (en) | Polishing composition containing polyether amine | |
JP2011508423A (ja) | 金属除去速度を制御するためのハロゲン化物アニオン | |
JP2014532305A (ja) | アルミニウム半導体基材研摩用の組成物および研磨方法 | |
TW201024397A (en) | Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate | |
TWI683896B (zh) | 研磨用組成物 | |
JP6538701B2 (ja) | 窒化チタン及びチタン/窒化チタン除去の抑制に関するcmp方法 | |
JP2006316167A (ja) | Cmp用研磨組成物 | |
JP5992925B2 (ja) | 金属を不動態化する化学機械研磨用組成物及び方法 | |
KR20230042493A (ko) | 음이온성 및 양이온성 억제제를 포함하는 cmp 조성물 | |
WO2021067151A1 (en) | Low dishing copper chemical mechanical planarization | |
TW202106824A (zh) | 以高鈷移除速率及減少的鈷腐蝕之鈷化學機械拋光方法 | |
TW202038325A (zh) | 化學機械研磨用水系分散體以及化學機械研磨方法 | |
JP2024511506A (ja) | 研磨用組成物及びその使用方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171228 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20171228 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181001 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20191007 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191126 |
|
A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20200226 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20200602 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200928 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20200928 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20201007 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20201013 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201110 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201210 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6810029 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |