SG11201808692QA - Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates - Google Patents

Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates

Info

Publication number
SG11201808692QA
SG11201808692QA SG11201808692QA SG11201808692QA SG11201808692QA SG 11201808692Q A SG11201808692Q A SG 11201808692QA SG 11201808692Q A SG11201808692Q A SG 11201808692QA SG 11201808692Q A SG11201808692Q A SG 11201808692QA SG 11201808692Q A SG11201808692Q A SG 11201808692QA
Authority
SG
Singapore
Prior art keywords
ludwigshafen
str
international
cobalt
cmp
Prior art date
Application number
SG11201808692QA
Inventor
Dr Reichardt
Max Siebert
Yongqing Lan
Michael Lauter
Ibrahim Sheik Ansar Usman
Reza Golzarin
Dr Guevenc
Dr Proelss
Leonardus Leunissen
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201808692QA publication Critical patent/SG11201808692QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 111111101111 0 DOI 01011111010111011101111101110101111100111110110111111 Organization International Bureau (10) International Publication Number (43) International Publication Date ......0\" WO 2017/186283 Al 02 November 2017 (02.11.2017) W I PO I PCT (51) International Patent Classification: TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, C09G 1/02 (2006.01) H01L 21/321 (2006.01) KM, ML, MR, NE, SN, TD, TG). (21) International Application Number: PCT/EP2016/059363 Published: — with international search report (Art. 21(3)) (22) International Filing Date: 27 April 2016 (27.04.2016) (25) Filing Language: English (26) Publication Language: English (71) Applicant: BASF SE [DE/DE]; Carl-Bosch-Str. 38, 67056 Ludwigshafen (DE). (72) Inventors: REICHARDT, DR.,, Robert; Fritz-Leder- le-Str. 6a, 67071 Ludwigshafen (DE). SIEBERT, DR.,, Max; Friedrich-Profit-Str. 41, 67063 Ludwigshafen (DE). LAN, Yongqing; Christoph-Krowerath-Str. 77, 67071 Ludwigshafen (DE). LAUTER, DR., Michael; Gontard- str. 6, 68163 Mannheim (DE). USMAN IBRAHIM, Sheik Ansar; Naamsesteenweg, 3001Z Heverlee (BE). _ GOLZARIN, Reza; 4201 NW 179th Place, Portland, Ore- gon — 97229 (US). GUEVENC , DR., Haci Osman; Langer = Anger 109, 69115 Heidelberg (DE). PROELSS, DR., Ju- lian; Bennigsenstr. 40, 67549 Worms (DE). LEUNISSEN, _ DR.,, Leonardus; Biirgermeister-Fries-Str. 13a, 67069 Ludwigshafen (DE). (74) Agent: BASF IP ASSOCIATION; BASF SE, ZRX-0006, 67056 Ludwigshafen (DE). = (81) Designated States (unless otherwise indicated, for every = kind of national protection available): AE, AG, AL, AM, = — AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, = _ EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, = HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, = MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, = _ PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, _ = SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, = UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. = — Designated States indicated, (84) (unless otherwise for every = — kind of regional protection available): ARIPO (BW, GH, = GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, — EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, 1-1 MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, r) M QC (54) Title: USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT AND / V::+ el OR COBALT ALLOY COMPRISING SUBSTRATES *t (57) : Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) 1-1 —. comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic IN surfactant of the general formula (I) R-S wherein R is C5-C20-alkyl, C5-C20-alkenyl, C5-C20-alkylacyl or C5-C20-alkenylacyl and S is 0 a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino N acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10. C
SG11201808692QA 2016-04-27 2016-04-27 Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates SG11201808692QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2016/059363 WO2017186283A1 (en) 2016-04-27 2016-04-27 Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates

Publications (1)

Publication Number Publication Date
SG11201808692QA true SG11201808692QA (en) 2018-11-29

Family

ID=55860841

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201808692QA SG11201808692QA (en) 2016-04-27 2016-04-27 Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates

Country Status (8)

Country Link
US (1) US11264250B2 (en)
EP (1) EP3448948B1 (en)
JP (1) JP2019520697A (en)
KR (1) KR20180135066A (en)
CN (1) CN109153886B (en)
IL (1) IL262380B (en)
SG (1) SG11201808692QA (en)
WO (1) WO2017186283A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6901297B2 (en) 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド Polishing composition
JP7064870B2 (en) * 2017-12-26 2022-05-11 ニッタ・デュポン株式会社 Polishing composition
WO2022107217A1 (en) * 2020-11-17 2022-05-27 昭和電工マテリアルズ株式会社 Polishing agent, multi-liquid polishing agent, and polishing method

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
TWI288046B (en) * 2003-11-14 2007-10-11 Showa Denko Kk Polishing composition and polishing method
TW200916567A (en) * 2007-08-23 2009-04-16 Nitta Haas Inc Polishing composition
US8506359B2 (en) * 2008-02-06 2013-08-13 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
WO2014069457A1 (en) * 2012-11-02 2014-05-08 株式会社フジミインコーポレーテッド Polishing composition
JP6156630B2 (en) * 2013-05-24 2017-07-05 Jsr株式会社 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
WO2016008896A1 (en) * 2014-07-15 2016-01-21 Basf Se A chemical mechanical polishing (cmp) composition
US10217645B2 (en) * 2014-07-25 2019-02-26 Versum Materials Us, Llc Chemical mechanical polishing (CMP) of cobalt-containing substrate
EP3209815B1 (en) * 2014-10-21 2021-12-29 CMC Materials, Inc. Corrosion inhibitors and related compositions and methods
EP3210237B1 (en) * 2014-10-21 2019-05-08 Cabot Microelectronics Corporation Cobalt dishing control agents
US9978609B2 (en) * 2015-04-27 2018-05-22 Versum Materials Us, Llc Low dishing copper chemical mechanical planarization

Also Published As

Publication number Publication date
CN109153886A (en) 2019-01-04
EP3448948B1 (en) 2021-07-28
US11264250B2 (en) 2022-03-01
IL262380B (en) 2022-08-01
WO2017186283A1 (en) 2017-11-02
KR20180135066A (en) 2018-12-19
EP3448948A1 (en) 2019-03-06
CN109153886B (en) 2021-12-21
JP2019520697A (en) 2019-07-18
US20200294813A1 (en) 2020-09-17
IL262380A (en) 2019-01-31

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