JP6809626B1 - シリコンウェーハのdic欠陥の形状測定方法及び研磨方法 - Google Patents
シリコンウェーハのdic欠陥の形状測定方法及び研磨方法 Download PDFInfo
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- JP6809626B1 JP6809626B1 JP2020069746A JP2020069746A JP6809626B1 JP 6809626 B1 JP6809626 B1 JP 6809626B1 JP 2020069746 A JP2020069746 A JP 2020069746A JP 2020069746 A JP2020069746 A JP 2020069746A JP 6809626 B1 JP6809626 B1 JP 6809626B1
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- 230000007547 defect Effects 0.000 title claims abstract description 126
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 44
- 239000010703 silicon Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 42
- 235000012431 wafers Nutrition 0.000 title claims description 42
- 238000005498 polishing Methods 0.000 title claims description 29
- 238000000691 measurement method Methods 0.000 title description 2
- 239000002245 particle Substances 0.000 claims abstract description 15
- 230000010363 phase shift Effects 0.000 claims abstract description 11
- 238000005305 interferometry Methods 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000010586 diagram Methods 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 241001482107 Alosa sapidissima Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0608—Height gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/03—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring coordinates of points
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/22—Measuring arrangements characterised by the use of optical techniques for measuring depth
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8854—Grading and classifying of flaws
- G01N2021/8861—Determining coordinates of flaws
- G01N2021/8864—Mapping zones of defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
Description
本実施例では、直径が300mmで、主面が(100)面であるシリコンウェーハを使用した。なお、使用したシリコンウェーハは、概略、順に、シリコン単結晶インゴット作製、インゴットスライス、面取り、ラッピング、エッチング、研磨、洗浄の、各作製フローが行われたものである。
比較例では、従来通り、パーティクルカウンターでDIC欠陥の発生が検出された場合に、一律のリワーク取り代でリワークを行う条件を示した。具体的には、取り代を2μmに設定し、リワーク時間にすると5分である(表1)。
Claims (3)
- シリコンウェーハのDIC欠陥の形状測定方法であって、
パーティクルカウンターを用いて、前記シリコンウェーハの主面におけるDIC欠陥を検出する工程と、
前記検出したDIC欠陥の位置座標を特定する工程と、
前記特定した位置座標を用いて、位相シフト干渉法により、前記検出したDIC欠陥の少なくとも高さ又は深さを含む形状を測定する工程とを有することを特徴とするDIC欠陥の形状測定方法。 - 前記シリコンウェーハの主面がデバイス作製面であることを特徴とする請求項1に記載のDIC欠陥の形状測定方法。
- 請求項1又は2に記載のDIC欠陥の形状測定方法により測定した前記DIC欠陥の形状に基づいて研磨取り代を設定し、前記シリコンウェーハの研磨を行うことを特徴とするシリコンウェーハの研磨方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020069746A JP6809626B1 (ja) | 2020-04-08 | 2020-04-08 | シリコンウェーハのdic欠陥の形状測定方法及び研磨方法 |
TW110111443A TW202140990A (zh) | 2020-04-08 | 2021-03-30 | 矽晶圓的微分干涉相差缺陷之形狀測定方法及研磨方法 |
CN202180024107.8A CN115335975A (zh) | 2020-04-08 | 2021-03-31 | 硅晶圆的dic缺陷的形状测量方法及研磨方法 |
PCT/JP2021/013755 WO2021205950A1 (ja) | 2020-04-08 | 2021-03-31 | シリコンウェーハのdic欠陥の形状測定方法及び研磨方法 |
KR1020227033112A KR20220164489A (ko) | 2020-04-08 | 2021-03-31 | 실리콘 웨이퍼의 dic결함의 형상측정방법 및 연마방법 |
DE112021000907.9T DE112021000907T5 (de) | 2020-04-08 | 2021-03-31 | Verfahren zur Messung der Form von DIC-Defekten auf Silicium-Wafern und Polierverfahren |
US17/914,631 US20230125000A1 (en) | 2020-04-08 | 2021-03-31 | Method for measuring dic defect shape on silicon wafer and polishing method |
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JP2020069746A JP6809626B1 (ja) | 2020-04-08 | 2020-04-08 | シリコンウェーハのdic欠陥の形状測定方法及び研磨方法 |
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JP6809626B1 true JP6809626B1 (ja) | 2021-01-06 |
JP2021166265A JP2021166265A (ja) | 2021-10-14 |
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US (1) | US20230125000A1 (ja) |
JP (1) | JP6809626B1 (ja) |
KR (1) | KR20220164489A (ja) |
CN (1) | CN115335975A (ja) |
DE (1) | DE112021000907T5 (ja) |
TW (1) | TW202140990A (ja) |
WO (1) | WO2021205950A1 (ja) |
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KR102255421B1 (ko) * | 2020-08-11 | 2021-05-24 | 충남대학교산학협력단 | 단결정 산화갈륨의 결함 평가방법 |
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EP0979398B1 (en) * | 1996-06-04 | 2012-01-04 | KLA-Tencor Corporation | Optical scanning system for surface inspection |
FR2881222A1 (fr) * | 2005-01-25 | 2006-07-28 | Debiotech Sa | Procede de mesure de volume par profilometrie optique de surface dans un dispositif micromecanique et ensemble destine a une telle mesure |
JP2006278513A (ja) * | 2005-03-28 | 2006-10-12 | Shin Etsu Handotai Co Ltd | 半導体ウエーハの評価方法及び製造方法 |
JP4385978B2 (ja) * | 2005-03-28 | 2009-12-16 | 信越半導体株式会社 | 半導体ウエーハの評価方法及び製造方法 |
JP2010021242A (ja) | 2008-07-09 | 2010-01-28 | Sumco Corp | 貼り合わせ用ウェーハの欠陥検出方法 |
US20110242312A1 (en) * | 2010-03-30 | 2011-10-06 | Lasertec Corporation | Inspection system and inspection method |
JP5888334B2 (ja) | 2011-09-30 | 2016-03-22 | ウシオ電機株式会社 | デジタルホログラフィ方法及びデジタルホログラフィ装置 |
US10157801B2 (en) * | 2016-01-04 | 2018-12-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Detecting the cleanness of wafer after post-CMP cleaning |
JP6327329B1 (ja) | 2016-12-20 | 2018-05-23 | 株式会社Sumco | シリコンウェーハの研磨方法およびシリコンウェーハの製造方法 |
JP6690606B2 (ja) | 2017-07-14 | 2020-04-28 | 信越半導体株式会社 | 研磨方法 |
JP2019058955A (ja) | 2017-09-22 | 2019-04-18 | 信越半導体株式会社 | 研磨ヘッド及び研磨ヘッドの製造方法 |
JP6708305B2 (ja) * | 2017-10-17 | 2020-06-10 | 株式会社Sumco | シリコンウェーハの研磨方法 |
JP6919579B2 (ja) | 2018-01-17 | 2021-08-18 | 株式会社Sumco | 貼り合わせウェーハの製造方法、貼り合わせウェーハ |
KR102160170B1 (ko) * | 2018-11-21 | 2020-09-25 | 에스케이실트론 주식회사 | 웨이퍼 표면의 파티클 측정 장치 및 방법 |
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- 2021-03-30 TW TW110111443A patent/TW202140990A/zh unknown
- 2021-03-31 KR KR1020227033112A patent/KR20220164489A/ko unknown
- 2021-03-31 CN CN202180024107.8A patent/CN115335975A/zh active Pending
- 2021-03-31 DE DE112021000907.9T patent/DE112021000907T5/de active Pending
- 2021-03-31 WO PCT/JP2021/013755 patent/WO2021205950A1/ja active Application Filing
- 2021-03-31 US US17/914,631 patent/US20230125000A1/en active Pending
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Publication number | Publication date |
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DE112021000907T5 (de) | 2022-11-17 |
US20230125000A1 (en) | 2023-04-20 |
CN115335975A (zh) | 2022-11-11 |
TW202140990A (zh) | 2021-11-01 |
WO2021205950A1 (ja) | 2021-10-14 |
JP2021166265A (ja) | 2021-10-14 |
KR20220164489A (ko) | 2022-12-13 |
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