JP6807767B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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JP6807767B2
JP6807767B2 JP2017019642A JP2017019642A JP6807767B2 JP 6807767 B2 JP6807767 B2 JP 6807767B2 JP 2017019642 A JP2017019642 A JP 2017019642A JP 2017019642 A JP2017019642 A JP 2017019642A JP 6807767 B2 JP6807767 B2 JP 6807767B2
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insulator
transistor
oxide
conductor
oxygen
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JP2017147443A (ja
JP2017147443A5 (enExample
Inventor
山崎　舜平
舜平 山崎
佑太 遠藤
佑太 遠藤
加藤　清
清 加藤
岡本　悟
悟 岡本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D64/01342—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
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    • H10P14/24—
    • H10P14/43—
    • H10P14/44—
    • H10P14/6329—
    • H10P14/6334—
    • H10P14/6339—
    • H10P14/6519—
    • H10P14/6532—
    • H10P14/6927—
    • H10P14/69391—
    • H10P14/69393—
    • H10P30/40—
    • H10P70/23—
    • H10P95/00—
    • H10W20/075—
    • H10W20/077—
    • H10W20/088—
    • H10W20/095—
    • H10W20/096—
    • H10W20/097—
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Memories (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2017019642A 2016-02-12 2017-02-06 半導体装置及びその作製方法 Active JP6807767B2 (ja)

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JP2016024794 2016-02-12
JP2016024794 2016-02-12

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JP2017147443A JP2017147443A (ja) 2017-08-24
JP2017147443A5 JP2017147443A5 (enExample) 2020-03-12
JP6807767B2 true JP6807767B2 (ja) 2021-01-06

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US (2) US9978774B2 (enExample)
JP (1) JP6807767B2 (enExample)
KR (1) KR102628719B1 (enExample)
CN (2) CN116782639A (enExample)
TW (1) TWI730041B (enExample)
WO (1) WO2017137864A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018020350A1 (en) 2016-07-26 2018-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP7167038B2 (ja) * 2017-09-15 2022-11-08 株式会社半導体エネルギー研究所 半導体装置
US11222945B2 (en) 2017-12-29 2022-01-11 Texas Instruments Incorporated High voltage isolation structure and method
US11355530B2 (en) 2018-04-12 2022-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method of semiconductor device
US10727275B2 (en) * 2018-05-18 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Memory layout for reduced line loading
US10304836B1 (en) * 2018-07-18 2019-05-28 Xerox Corporation Protective layers for high-yield printed electronic devices
US10741638B2 (en) * 2018-08-08 2020-08-11 Infineon Technologies Austria Ag Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices
JP7355752B2 (ja) * 2018-10-05 2023-10-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10707296B2 (en) 2018-10-10 2020-07-07 Texas Instruments Incorporated LOCOS with sidewall spacer for different capacitance density capacitors
JP2020072191A (ja) * 2018-10-31 2020-05-07 キオクシア株式会社 半導体記憶装置
US11849572B2 (en) 2019-01-14 2023-12-19 Intel Corporation 3D 1T1C stacked DRAM structure and method to fabricate
CN109964313A (zh) 2019-02-11 2019-07-02 长江存储科技有限责任公司 具有由不扩散导电材料制成的键合触点的键合半导体结构及其形成方法
US11791221B2 (en) * 2019-02-22 2023-10-17 Intel Corporation Integration of III-N transistors and semiconductor layer transfer
US12501733B2 (en) 2019-03-07 2025-12-16 Sony Semiconductor Solutions Corporation Semiconductor device and imaging unit
US12376410B2 (en) * 2019-07-04 2025-07-29 Semiconductor Energy Laboratory Co., Ltd. Imaging device with embedded conductive layers
US12289878B2 (en) 2019-07-12 2025-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
CN114175249A (zh) 2019-08-09 2022-03-11 株式会社半导体能源研究所 存储装置
US11437416B2 (en) * 2019-09-10 2022-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Pixel device layout to reduce pixel noise
US11107820B2 (en) * 2019-09-13 2021-08-31 Nanya Technology Corporation Semiconductor device and method for fabricating the same
CN110993607B (zh) * 2019-11-21 2022-12-16 长江存储科技有限责任公司 具有阻挡结构的存储器件及其制备方法
CN111128721A (zh) * 2019-12-04 2020-05-08 长江存储科技有限责任公司 存储器的制作方法及存储器
US11864413B2 (en) * 2020-05-15 2024-01-02 Chengdu Boe Optoelectronics Technology Co., Ltd. Display substrate and method for manufacturing the same, display device
US20230179110A1 (en) * 2020-05-22 2023-06-08 Marel Power Solutions, Inc. Compact power converter
US11610999B2 (en) * 2020-06-10 2023-03-21 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Floating-gate devices in high voltage applications
JP7756646B2 (ja) * 2020-08-19 2025-10-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US11728272B2 (en) 2021-03-31 2023-08-15 Taiwan Semiconductor Manufacturing Company Limited Plasma-damage-resistant interconnect structure and methods for manufacturing the same
JP2023067454A (ja) * 2021-11-01 2023-05-16 ソニーセミコンダクタソリューションズ株式会社 半導体装置、電子機器、及び半導体装置の製造方法
TWI802321B (zh) * 2022-03-17 2023-05-11 新唐科技股份有限公司 橫向雙擴散金氧半導體裝置
CN116209249B (zh) * 2022-08-08 2024-02-20 北京超弦存储器研究院 动态存储器、其制作方法、读取方法及存储装置
KR102891038B1 (ko) * 2023-08-29 2025-11-28 (주)피코셈 반도체 디바이스 및 그 제조 방법

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101299429B (zh) * 2004-06-28 2010-12-15 富士通半导体股份有限公司 半导体器件及其制造方法
JP2008010758A (ja) * 2006-06-30 2008-01-17 Fujitsu Ltd 半導体装置及びその製造方法
CN103794612B (zh) 2009-10-21 2018-09-07 株式会社半导体能源研究所 半导体装置
CN102598247B (zh) 2009-10-29 2015-05-06 株式会社半导体能源研究所 半导体器件
KR20240042252A (ko) 2009-10-29 2024-04-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101945171B1 (ko) 2009-12-08 2019-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011070901A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
WO2013089115A1 (en) * 2011-12-15 2013-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9735280B2 (en) 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
US8981370B2 (en) * 2012-03-08 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9006024B2 (en) * 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2015060133A1 (en) 2013-10-22 2015-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN110571278A (zh) * 2013-10-22 2019-12-13 株式会社半导体能源研究所 半导体装置
WO2015097589A1 (en) 2013-12-26 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102325158B1 (ko) * 2014-01-30 2021-11-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법
TWI663733B (zh) 2014-06-18 2019-06-21 日商半導體能源研究所股份有限公司 電晶體及半導體裝置
KR20220069118A (ko) * 2014-07-15 2022-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치
JP2016066788A (ja) 2014-09-19 2016-04-28 株式会社半導体エネルギー研究所 半導体膜の評価方法および半導体装置の作製方法
KR20160034200A (ko) 2014-09-19 2016-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR20160114511A (ko) * 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US10460984B2 (en) 2015-04-15 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating electrode and semiconductor device
WO2017081579A1 (en) * 2015-11-13 2017-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6917700B2 (ja) * 2015-12-02 2021-08-11 株式会社半導体エネルギー研究所 半導体装置
JP6884569B2 (ja) * 2015-12-25 2021-06-09 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP6851814B2 (ja) * 2015-12-29 2021-03-31 株式会社半導体エネルギー研究所 トランジスタ
JP6845692B2 (ja) 2016-01-15 2021-03-24 株式会社半導体エネルギー研究所 半導体装置
US10700212B2 (en) * 2016-01-28 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof

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CN108886021B (zh) 2023-07-25
US10367005B2 (en) 2019-07-30
US20180254291A1 (en) 2018-09-06
US9978774B2 (en) 2018-05-22
CN116782639A (zh) 2023-09-19
WO2017137864A1 (en) 2017-08-17
KR20180124032A (ko) 2018-11-20
US20170236839A1 (en) 2017-08-17
TWI730041B (zh) 2021-06-11
KR102628719B1 (ko) 2024-01-24
TW201735130A (zh) 2017-10-01
CN108886021A (zh) 2018-11-23
JP2017147443A (ja) 2017-08-24

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