KR102628719B1 - 반도체 장치 및 그 제작 방법 - Google Patents

반도체 장치 및 그 제작 방법 Download PDF

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KR102628719B1
KR102628719B1 KR1020187024777A KR20187024777A KR102628719B1 KR 102628719 B1 KR102628719 B1 KR 102628719B1 KR 1020187024777 A KR1020187024777 A KR 1020187024777A KR 20187024777 A KR20187024777 A KR 20187024777A KR 102628719 B1 KR102628719 B1 KR 102628719B1
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insulator
transistor
oxide
conductor
oxygen
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KR20180124032A (ko
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슌페이 야마자키
šœ페이 야마자키
유타 엔도
기요시 가토
사토루 오카모토
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
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Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018020350A1 (en) 2016-07-26 2018-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11088286B2 (en) * 2017-09-15 2021-08-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US11222945B2 (en) * 2017-12-29 2022-01-11 Texas Instruments Incorporated High voltage isolation structure and method
US11355530B2 (en) 2018-04-12 2022-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method of semiconductor device
US10727275B2 (en) * 2018-05-18 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Memory layout for reduced line loading
US10304836B1 (en) * 2018-07-18 2019-05-28 Xerox Corporation Protective layers for high-yield printed electronic devices
US10741638B2 (en) * 2018-08-08 2020-08-11 Infineon Technologies Austria Ag Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices
US11881522B2 (en) 2018-10-05 2024-01-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US10707296B2 (en) * 2018-10-10 2020-07-07 Texas Instruments Incorporated LOCOS with sidewall spacer for different capacitance density capacitors
JP2020072191A (ja) * 2018-10-31 2020-05-07 キオクシア株式会社 半導体記憶装置
US11849572B2 (en) 2019-01-14 2023-12-19 Intel Corporation 3D 1T1C stacked DRAM structure and method to fabricate
JP2022509235A (ja) 2019-02-11 2022-01-20 長江存儲科技有限責任公司 半導体デバイス、接合構造および半導体デバイスの形成方法
US11791221B2 (en) * 2019-02-22 2023-10-17 Intel Corporation Integration of III-N transistors and semiconductor layer transfer
US12501733B2 (en) 2019-03-07 2025-12-16 Sony Semiconductor Solutions Corporation Semiconductor device and imaging unit
US12376410B2 (en) 2019-07-04 2025-07-29 Semiconductor Energy Laboratory Co., Ltd. Imaging device with embedded conductive layers
KR20220031020A (ko) 2019-07-12 2022-03-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US12156410B2 (en) 2019-08-09 2024-11-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
US11437416B2 (en) * 2019-09-10 2022-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Pixel device layout to reduce pixel noise
US11107820B2 (en) * 2019-09-13 2021-08-31 Nanya Technology Corporation Semiconductor device and method for fabricating the same
CN110993607B (zh) * 2019-11-21 2022-12-16 长江存储科技有限责任公司 具有阻挡结构的存储器件及其制备方法
CN111128721A (zh) * 2019-12-04 2020-05-08 长江存储科技有限责任公司 存储器的制作方法及存储器
WO2021227027A1 (zh) * 2020-05-15 2021-11-18 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
US20230179110A1 (en) * 2020-05-22 2023-06-08 Marel Power Solutions, Inc. Compact power converter
US11610999B2 (en) * 2020-06-10 2023-03-21 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Floating-gate devices in high voltage applications
KR20230050329A (ko) * 2020-08-19 2023-04-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US11728272B2 (en) 2021-03-31 2023-08-15 Taiwan Semiconductor Manufacturing Company Limited Plasma-damage-resistant interconnect structure and methods for manufacturing the same
JP2023067454A (ja) * 2021-11-01 2023-05-16 ソニーセミコンダクタソリューションズ株式会社 半導体装置、電子機器、及び半導体装置の製造方法
TWI802321B (zh) * 2022-03-17 2023-05-11 新唐科技股份有限公司 橫向雙擴散金氧半導體裝置
CN116209249B (zh) * 2022-08-08 2024-02-20 北京超弦存储器研究院 动态存储器、其制作方法、读取方法及存储装置
KR102891038B1 (ko) * 2023-08-29 2025-11-28 (주)피코셈 반도체 디바이스 및 그 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008010758A (ja) 2006-06-30 2008-01-17 Fujitsu Ltd 半導体装置及びその製造方法
JP2015109425A (ja) 2013-10-22 2015-06-11 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP2015144271A (ja) 2013-12-26 2015-08-06 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101299429B (zh) * 2004-06-28 2010-12-15 富士通半导体股份有限公司 半导体器件及其制造方法
CN105070715B (zh) 2009-10-21 2018-10-19 株式会社半导体能源研究所 半导体装置
KR102416955B1 (ko) 2009-10-29 2022-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2494594B1 (en) 2009-10-29 2020-02-19 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
KR101470303B1 (ko) * 2009-12-08 2014-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011070901A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
DE112011102644B4 (de) 2010-08-06 2019-12-05 Semiconductor Energy Laboratory Co., Ltd. Integrierte Halbleiterschaltung
WO2013089115A1 (en) * 2011-12-15 2013-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9735280B2 (en) 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
US8981370B2 (en) * 2012-03-08 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9006024B2 (en) * 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2015060133A1 (en) 2013-10-22 2015-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102325158B1 (ko) * 2014-01-30 2021-11-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법
TWI663733B (zh) 2014-06-18 2019-06-21 日商半導體能源研究所股份有限公司 電晶體及半導體裝置
WO2016009310A1 (en) * 2014-07-15 2016-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device including the semiconductor device
KR20160034200A (ko) 2014-09-19 2016-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP2016066788A (ja) 2014-09-19 2016-04-28 株式会社半導体エネルギー研究所 半導体膜の評価方法および半導体装置の作製方法
KR20160114511A (ko) * 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US10460984B2 (en) 2015-04-15 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating electrode and semiconductor device
WO2017081579A1 (en) * 2015-11-13 2017-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6917700B2 (ja) * 2015-12-02 2021-08-11 株式会社半導体エネルギー研究所 半導体装置
US9917207B2 (en) * 2015-12-25 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6851814B2 (ja) * 2015-12-29 2021-03-31 株式会社半導体エネルギー研究所 トランジスタ
JP6845692B2 (ja) 2016-01-15 2021-03-24 株式会社半導体エネルギー研究所 半導体装置
US10700212B2 (en) * 2016-01-28 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008010758A (ja) 2006-06-30 2008-01-17 Fujitsu Ltd 半導体装置及びその製造方法
JP2015109425A (ja) 2013-10-22 2015-06-11 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP2015144271A (ja) 2013-12-26 2015-08-06 株式会社半導体エネルギー研究所 半導体装置

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