JP6789099B2 - 計測方法、除電方法及びプラズマ処理装置 - Google Patents

計測方法、除電方法及びプラズマ処理装置 Download PDF

Info

Publication number
JP6789099B2
JP6789099B2 JP2016251572A JP2016251572A JP6789099B2 JP 6789099 B2 JP6789099 B2 JP 6789099B2 JP 2016251572 A JP2016251572 A JP 2016251572A JP 2016251572 A JP2016251572 A JP 2016251572A JP 6789099 B2 JP6789099 B2 JP 6789099B2
Authority
JP
Japan
Prior art keywords
wafer
calculated
substrate
residual charge
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016251572A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018107265A5 (enExample
JP2018107265A (ja
Inventor
雅紀 佐藤
雅紀 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2016251572A priority Critical patent/JP6789099B2/ja
Priority to US15/844,729 priority patent/US10755957B2/en
Priority to KR1020170175181A priority patent/KR102458423B1/ko
Priority to TW106145207A priority patent/TWI764967B/zh
Publication of JP2018107265A publication Critical patent/JP2018107265A/ja
Publication of JP2018107265A5 publication Critical patent/JP2018107265A5/ja
Application granted granted Critical
Publication of JP6789099B2 publication Critical patent/JP6789099B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/24—Arrangements for measuring quantities of charge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/12—Measuring electrostatic fields or voltage-potential

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2016251572A 2016-12-26 2016-12-26 計測方法、除電方法及びプラズマ処理装置 Active JP6789099B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016251572A JP6789099B2 (ja) 2016-12-26 2016-12-26 計測方法、除電方法及びプラズマ処理装置
US15/844,729 US10755957B2 (en) 2016-12-26 2017-12-18 Measurement method, method of removing static electricity, and plasma processing apparatus
KR1020170175181A KR102458423B1 (ko) 2016-12-26 2017-12-19 계측 방법, 제전 방법 및 플라즈마 처리 장치
TW106145207A TWI764967B (zh) 2016-12-26 2017-12-22 計測方法、除電方法及電漿處理裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016251572A JP6789099B2 (ja) 2016-12-26 2016-12-26 計測方法、除電方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2018107265A JP2018107265A (ja) 2018-07-05
JP2018107265A5 JP2018107265A5 (enExample) 2019-10-10
JP6789099B2 true JP6789099B2 (ja) 2020-11-25

Family

ID=62630119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016251572A Active JP6789099B2 (ja) 2016-12-26 2016-12-26 計測方法、除電方法及びプラズマ処理装置

Country Status (4)

Country Link
US (1) US10755957B2 (enExample)
JP (1) JP6789099B2 (enExample)
KR (1) KR102458423B1 (enExample)
TW (1) TWI764967B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10770257B2 (en) * 2018-07-20 2020-09-08 Asm Ip Holding B.V. Substrate processing method
JP7241540B2 (ja) * 2018-12-28 2023-03-17 東京エレクトロン株式会社 測定方法及び測定治具
US10950485B2 (en) * 2019-04-17 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor processing apparatus and method utilizing electrostatic discharge (ESD) prevention layer
JP7340953B2 (ja) * 2019-04-26 2023-09-08 東京エレクトロン株式会社 除電方法、基板処理方法及び基板処理装置
US11171030B2 (en) 2019-05-06 2021-11-09 Applied Materials, Inc. Methods and apparatus for dechucking wafers
JP7398909B2 (ja) * 2019-09-12 2023-12-15 東京エレクトロン株式会社 静電吸着方法及びプラズマ処理装置
CN113725059B (zh) * 2020-05-26 2025-04-08 中微半导体设备(上海)股份有限公司 一种下电极组件，其安装方法及等离子体处理装置
CN112526242B (zh) * 2020-11-26 2024-02-27 北京北方华创微电子装备有限公司 半导体工艺设备及静电卡盘表面电荷量的检测方法
KR102813737B1 (ko) * 2020-12-10 2025-05-28 주식회사 원익아이피에스 기판처리장치
US12243848B2 (en) * 2021-05-14 2025-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and systems for improving fusion bonding
KR102769437B1 (ko) * 2022-05-18 2025-02-17 주민수 웨이퍼 고정용 정전척의 동일성 검증을 위한 비파괴 진단 방법
KR102891426B1 (ko) 2022-08-02 2025-11-25 도쿄엘렉트론가부시키가이샤 제전 상태 표시 방법, 기판 처리 장치 및 프로그램
JP2025027211A (ja) 2023-08-14 2025-02-27 東京エレクトロン株式会社 状態判定方法、基板処理装置及びプログラム

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5325261A (en) * 1991-05-17 1994-06-28 Unisearch Limited Electrostatic chuck with improved release
JP3005461B2 (ja) * 1995-11-24 2000-01-31 日本電気株式会社 静電チャック
US5818682A (en) * 1996-08-13 1998-10-06 Applied Materials, Inc. Method and apparatus for optimizing a dechucking period used to dechuck a workpiece from an electrostatic chuck
JP4579206B2 (ja) * 1997-05-23 2010-11-10 株式会社アルバック 離脱状態判断方法及び真空処理装置
JP4484883B2 (ja) * 1997-05-23 2010-06-16 株式会社アルバック 被吸着物の処理方法
JP4226101B2 (ja) * 1998-05-12 2009-02-18 株式会社アルバック 静電チャックプレート表面からの基板離脱方法
JP2004228488A (ja) * 2003-01-27 2004-08-12 Matsushita Electric Ind Co Ltd 基板搬送方法
JP2004281783A (ja) * 2003-03-17 2004-10-07 Renesas Technology Corp 半導体処理装置
US7292428B2 (en) * 2005-04-26 2007-11-06 Applied Materials, Inc. Electrostatic chuck with smart lift-pin mechanism for a plasma reactor
JP2008294257A (ja) * 2007-05-25 2008-12-04 Seiko Epson Corp 半導体基板の脱離方法及び静電チャック装置
US9225285B2 (en) * 2008-09-24 2015-12-29 Sunpower Corporation Photovoltaic installation with automatic disconnect device
CN101872733B (zh) * 2009-04-24 2012-06-27 中微半导体设备(上海)有限公司 感测和移除被加工半导体工艺件的残余电荷的系统和方法
CN102484086B (zh) * 2009-09-10 2014-10-15 朗姆研究公司 基于等离子体信号与基板位置和电位相耦合来优化等离子体释放的方法和设备
US10069443B2 (en) * 2011-12-20 2018-09-04 Tokyo Electron Limited Dechuck control method and plasma processing apparatus
JP6013740B2 (ja) * 2012-02-03 2016-10-25 東京エレクトロン株式会社 離脱制御方法及びプラズマ処理装置の制御装置
JP6401901B2 (ja) * 2013-11-13 2018-10-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US9101038B2 (en) * 2013-12-20 2015-08-04 Lam Research Corporation Electrostatic chuck including declamping electrode and method of declamping

Also Published As

Publication number Publication date
TW201838027A (zh) 2018-10-16
JP2018107265A (ja) 2018-07-05
KR102458423B1 (ko) 2022-10-25
US10755957B2 (en) 2020-08-25
KR20180075397A (ko) 2018-07-04
TWI764967B (zh) 2022-05-21
US20180182656A1 (en) 2018-06-28

Similar Documents

Publication Publication Date Title
JP6789099B2 (ja) 計測方法、除電方法及びプラズマ処理装置
JP7138497B2 (ja) 測定装置、測定方法及びプラズマ処理装置
TWI721062B (zh) 電漿處理方法及電漿處理裝置
US9466519B2 (en) De-chuck control method and control device for plasma processing apparatus
CN109427531B (zh) 测定装置、测定方法以及等离子体处理装置
TWI829915B (zh) 除電方法、基板處理方法及基板處理裝置
TWI660421B (zh) 基板處理方法及基板處理裝置
JP2018107265A5 (enExample)
CN111381194B (zh) 测定方法和测定治具
TW201526098A (zh) 清洗方法及基板處理裝置
TW201338009A (zh) 用以偵測電漿處理腔室中之直流偏壓的系統、方法與設備
TW202027164A (zh) 電漿處理裝置及環構件之形狀測定方法
US11658012B2 (en) Control method and plasma processing apparatus
JP7648309B2 (ja) プラズマ処理装置及びプログラム
JP7527194B2 (ja) プラズマ処理装置およびプラズマ処理方法
TW202312222A (zh) 清洗控制方法及電漿處理裝置
JP4365300B2 (ja) プラズマ処理装置およびプラズマ処理方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190902

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190902

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200827

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20201006

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20201102

R150 Certificate of patent or registration of utility model

Ref document number: 6789099

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250