JP6786316B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP6786316B2
JP6786316B2 JP2016177746A JP2016177746A JP6786316B2 JP 6786316 B2 JP6786316 B2 JP 6786316B2 JP 2016177746 A JP2016177746 A JP 2016177746A JP 2016177746 A JP2016177746 A JP 2016177746A JP 6786316 B2 JP6786316 B2 JP 6786316B2
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Japan
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region
contact
trench
emitter electrode
semiconductor substrate
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JP2016177746A
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Japanese (ja)
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JP2018046053A (ja
JP2018046053A5 (enExample
Inventor
隆充 松尾
隆充 松尾
仁 松浦
仁 松浦
靖之 斉藤
靖之 斉藤
義典 星野
義典 星野
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2016177746A priority Critical patent/JP6786316B2/ja
Priority to CN201710794982.XA priority patent/CN107819032B/zh
Priority to CN201721135203.7U priority patent/CN207474470U/zh
Priority to TW106130534A priority patent/TWI717551B/zh
Priority to EP18211862.0A priority patent/EP3483940B1/en
Priority to EP17190374.3A priority patent/EP3293770A1/en
Priority to US15/700,337 priority patent/US10600896B2/en
Publication of JP2018046053A publication Critical patent/JP2018046053A/ja
Publication of JP2018046053A5 publication Critical patent/JP2018046053A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/035—Etching a recess in the emitter region 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

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  • Electrodes Of Semiconductors (AREA)
JP2016177746A 2016-09-12 2016-09-12 半導体装置の製造方法 Active JP6786316B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2016177746A JP6786316B2 (ja) 2016-09-12 2016-09-12 半導体装置の製造方法
CN201710794982.XA CN107819032B (zh) 2016-09-12 2017-09-06 半导体器件及其制造方法
CN201721135203.7U CN207474470U (zh) 2016-09-12 2017-09-06 半导体器件
TW106130534A TWI717551B (zh) 2016-09-12 2017-09-07 半導體裝置之製造方法
EP18211862.0A EP3483940B1 (en) 2016-09-12 2017-09-11 Semiconductor device and method for producing the same
EP17190374.3A EP3293770A1 (en) 2016-09-12 2017-09-11 Semiconductor device and method for producing the same
US15/700,337 US10600896B2 (en) 2016-09-12 2017-09-11 Semiconductor device and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016177746A JP6786316B2 (ja) 2016-09-12 2016-09-12 半導体装置の製造方法

Publications (3)

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JP2018046053A JP2018046053A (ja) 2018-03-22
JP2018046053A5 JP2018046053A5 (enExample) 2019-04-04
JP6786316B2 true JP6786316B2 (ja) 2020-11-18

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US (1) US10600896B2 (enExample)
EP (2) EP3483940B1 (enExample)
JP (1) JP6786316B2 (enExample)
CN (2) CN107819032B (enExample)
TW (1) TWI717551B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6786316B2 (ja) * 2016-09-12 2020-11-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP7125339B2 (ja) 2018-12-26 2022-08-24 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
EP3863062B1 (en) * 2020-02-07 2025-05-21 Infineon Technologies Austria AG Semiconductor transistor device and method of manufacturing the same
JP7475265B2 (ja) * 2020-12-14 2024-04-26 三菱電機株式会社 半導体装置及び半導体装置の製造方法
KR102861154B1 (ko) 2021-02-22 2025-09-17 삼성전자주식회사 반도체 장치
CN113178474A (zh) * 2021-03-02 2021-07-27 华为技术有限公司 半导体器件及其制作方法、及电子设备
CN114496910A (zh) * 2022-01-10 2022-05-13 上海华虹宏力半导体制造有限公司 双接触孔实现方法
JP7731320B2 (ja) * 2022-05-17 2025-08-29 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Family Cites Families (19)

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DE19651108C2 (de) 1996-04-11 2000-11-23 Mitsubishi Electric Corp Halbleitereinrichtung des Gategrabentyps mit hoher Durchbruchsspannung und ihr Herstellungsverfahren
JP4205128B2 (ja) * 1996-04-11 2009-01-07 三菱電機株式会社 高耐圧半導体装置およびその製造方法
JP2005057028A (ja) * 2003-08-04 2005-03-03 Sanken Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
JP2007207930A (ja) 2006-01-31 2007-08-16 Toshiba Corp 残渣処理システム、残渣処理方法及び半導体装置の製造方法
CN101536164B (zh) * 2006-09-27 2012-06-20 巨能半导体股份有限公司 具有凹陷场板的功率金属氧化物半导体场效应晶体管
US8264033B2 (en) * 2009-07-21 2012-09-11 Infineon Technologies Austria Ag Semiconductor device having a floating semiconductor zone
US20130164895A1 (en) 2011-12-12 2013-06-27 Maxpower Semiconductor, Inc. Trench-Gated Power Devices with Two Types of Trenches and Reliable Polycidation
JP5973730B2 (ja) 2012-01-05 2016-08-23 ルネサスエレクトロニクス株式会社 Ｉｅ型トレンチゲートｉｇｂｔ
US8946002B2 (en) * 2012-07-24 2015-02-03 Semiconductor Components Industries, Llc Method of forming a semiconductor device having a patterned gate dielectric and structure therefor
JP6190206B2 (ja) * 2012-08-21 2017-08-30 ローム株式会社 半導体装置
JP6284314B2 (ja) * 2012-08-21 2018-02-28 ローム株式会社 半導体装置
JP5900243B2 (ja) * 2012-08-23 2016-04-06 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2014075483A (ja) * 2012-10-04 2014-04-24 Sanken Electric Co Ltd 半導体装置及び半導体装置の製造方法
US9666663B2 (en) * 2013-08-09 2017-05-30 Infineon Technologies Ag Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device
JP6354458B2 (ja) * 2014-08-27 2018-07-11 富士電機株式会社 半導体装置
JP5758058B1 (ja) 2015-03-23 2015-08-05 株式会社コーチ・エィ コーチング支援システム、コーチング支援方法、およびコーチング支援プログラム
JP6472714B2 (ja) * 2015-06-03 2019-02-20 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6584893B2 (ja) * 2015-09-25 2019-10-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6786316B2 (ja) * 2016-09-12 2020-11-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
EP3483940B1 (en) 2020-07-22
EP3293770A1 (en) 2018-03-14
JP2018046053A (ja) 2018-03-22
CN107819032B (zh) 2023-10-24
EP3483940A1 (en) 2019-05-15
CN107819032A (zh) 2018-03-20
US10600896B2 (en) 2020-03-24
US20180076308A1 (en) 2018-03-15
CN207474470U (zh) 2018-06-08
TW201826541A (zh) 2018-07-16
TWI717551B (zh) 2021-02-01

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