JP6777742B2 - フリップチップのパッケージ方法 - Google Patents

フリップチップのパッケージ方法 Download PDF

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Publication number
JP6777742B2
JP6777742B2 JP2018532495A JP2018532495A JP6777742B2 JP 6777742 B2 JP6777742 B2 JP 6777742B2 JP 2018532495 A JP2018532495 A JP 2018532495A JP 2018532495 A JP2018532495 A JP 2018532495A JP 6777742 B2 JP6777742 B2 JP 6777742B2
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Prior art keywords
flip chip
photoresist
metal
conductive layer
packaging method
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Japanese (ja)
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JP2018529238A5 (enExample
JP2018529238A (ja
Inventor
クァン ケ
クァン ケ
フーティン イ
フーティン イ
ミン パン
ミン パン
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2018532495A 2015-09-11 2016-04-26 フリップチップのパッケージ方法 Active JP6777742B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201510579955.1 2015-09-11
CN201510579955.1A CN105161436B (zh) 2015-09-11 2015-09-11 倒装芯片的封装方法
PCT/CN2016/080209 WO2017041491A1 (zh) 2015-09-11 2016-04-26 倒装芯片的封装方法

Publications (3)

Publication Number Publication Date
JP2018529238A JP2018529238A (ja) 2018-10-04
JP2018529238A5 JP2018529238A5 (enExample) 2018-12-13
JP6777742B2 true JP6777742B2 (ja) 2020-10-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018532495A Active JP6777742B2 (ja) 2015-09-11 2016-04-26 フリップチップのパッケージ方法

Country Status (4)

Country Link
US (1) US10985300B2 (enExample)
JP (1) JP6777742B2 (enExample)
CN (1) CN105161436B (enExample)
WO (1) WO2017041491A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105161436B (zh) * 2015-09-11 2018-05-22 柯全 倒装芯片的封装方法
US10861895B2 (en) * 2018-11-20 2020-12-08 Ningbo Semiconductor International Corporation Image capturing assembly and packaging method thereof, lens module and electronic device
CN109817769B (zh) * 2019-01-15 2020-10-30 申广 一种新型led芯片封装制作方法
CN110112129B (zh) * 2019-06-05 2024-04-02 福建天电光电有限公司 一种玻璃荧光片的发光半导体制作工艺
CN111170271A (zh) * 2019-12-30 2020-05-19 杭州臻镭微波技术有限公司 一种嵌入式微系统模组中的芯片切割误差的协调方法
CN119365062B (zh) * 2024-10-21 2025-09-19 中国科学院上海微系统与信息技术研究所 超导量子芯片封装结构及超导量子芯片的倒装封装方法

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US20040007779A1 (en) 2002-07-15 2004-01-15 Diane Arbuthnot Wafer-level method for fine-pitch, high aspect ratio chip interconnect
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JP5201983B2 (ja) 2007-12-28 2013-06-05 富士通株式会社 電子部品
JP5107187B2 (ja) 2008-09-05 2012-12-26 新光電気工業株式会社 電子部品パッケージの製造方法
CN101728466A (zh) * 2008-10-29 2010-06-09 先进开发光电股份有限公司 高功率发光二极管陶瓷封装结构及其制造方法
DE112011100376B4 (de) * 2010-01-29 2024-06-27 Citizen Electronics Co., Ltd. Verfahren zur herstellung einer licht aussendenden vorrichtung
KR101181224B1 (ko) * 2011-03-29 2012-09-10 성균관대학교산학협력단 Ｌｅｄ 패키지 및 그 제조방법
JP5748336B2 (ja) * 2011-06-10 2015-07-15 富士機械製造株式会社 半導体装置の製造方法
CN103094135A (zh) 2011-11-01 2013-05-08 柯全 倒装芯片的封装方法
JP5829501B2 (ja) * 2011-12-01 2015-12-09 富士機械製造株式会社 半導体素子画像認識装置及び半導体素子画像認識方法
WO2013145071A1 (ja) * 2012-03-26 2013-10-03 富士機械製造株式会社 Ｌｅｄパッケージ及びその製造方法
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CN103488051B (zh) * 2013-08-28 2015-11-11 中国科学院高能物理研究所 一种用于liga技术的光刻胶膜与基片的复合结构的制备方法
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CN104658929A (zh) 2014-04-22 2015-05-27 柯全 倒装芯片的封装方法及装置
CN105098025A (zh) * 2014-05-07 2015-11-25 新世纪光电股份有限公司 发光装置
CN105161436B (zh) 2015-09-11 2018-05-22 柯全 倒装芯片的封装方法

Also Published As

Publication number Publication date
US20180261743A1 (en) 2018-09-13
WO2017041491A1 (zh) 2017-03-16
CN105161436B (zh) 2018-05-22
CN105161436A (zh) 2015-12-16
JP2018529238A (ja) 2018-10-04
US10985300B2 (en) 2021-04-20

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