JP6771015B2 - 上部発光型有機発光ダイオード表示装置 - Google Patents
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- JP6771015B2 JP6771015B2 JP2018233962A JP2018233962A JP6771015B2 JP 6771015 B2 JP6771015 B2 JP 6771015B2 JP 2018233962 A JP2018233962 A JP 2018233962A JP 2018233962 A JP2018233962 A JP 2018233962A JP 6771015 B2 JP6771015 B2 JP 6771015B2
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- 239000010408 film Substances 0.000 claims description 84
- 239000000758 substrate Substances 0.000 claims description 39
- 239000010409 thin film Substances 0.000 claims description 29
- 230000001681 protective effect Effects 0.000 claims description 23
- 239000000126 substance Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000007769 metal material Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 230000000873 masking effect Effects 0.000 description 12
- 239000004020 conductor Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- -1 ITO or IZO Chemical class 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/88—Dummy elements, i.e. elements having non-functional features
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Description
Claims (7)
- 基板上に配置された補助配線と、
前記補助配線を覆う絶縁膜と、
前記絶縁膜の上に配置され、前記補助配線と接続された補助カソード電極と、
前記補助カソード電極を覆う保護膜と、
前記保護膜の上に積層された平坦化膜と、
前記補助カソード電極の一側端部を露出するアンダーカット開口部と、
前記アンダーカット開口部の内側において、前記露出された補助カソード電極の前記一側端部の下層部に配置された前記絶縁膜を除去して形成されたアンダー領域と、
前記平坦化膜上から前記アンダーカット開口部に延長され、前記露出された補助カソード電極と接触する接続端子と、
前記補助カソード電極の表面上に積層されるが、前記アンダー領域には塗布されず、前記補助カソード電極の露出した端部と接触している前記接続端子の側面を露出させる有機発光層と、
前記有機発光層の上に積層され、前記アンダーカット開口部において前記有機発光層によって被覆されていない前記接続端子の側面と接触するカソード電極と
を含む有機発光ダイオード表示装置。 - 前記アンダーカット開口部は、
前記平坦化膜、前記保護膜及び前記絶縁膜のエッチング側面を有する一側部と、
前記補助カソード電極の前記一側端部を露出し、前記露出された一側端部の下部に形成された前記アンダー領域を有する他側部と
を含む、請求項1に記載の有機発光ダイオード表示装置。 - 前記アンダー領域に配置され、前記カソード電極と直接接触するダミー接続端子をさらに含む、請求項1に記載の有機発光ダイオード表示装置。
- 前記基板上において、前記補助配線と同じ層に配置された遮光層と、
前記遮光層の上において、前記保護膜の下に配置された薄膜トランジスタと、
前記平坦化膜に形成された、前記薄膜トランジスタの一部を露出する画素コンタクトホールと、
前記平坦化膜上において画素コンタクトホールを介して前記薄膜トランジスタと接続されるアノード電極と、
前記アンダーカット開口部より大きいサイズで前記アンダーカット開口部の全体を露出し、前記アノード電極の中央部を露出する発光領域を開放するバンクと、
をさらに含み、
前記有機発光層は、前記発光領域上の全体に塗布され、
前記カソード電極は、前記発光領域においては、前記有機発光層上に積層され、
前記発光領域においては、前記アノード電極、前記有機発光層及び、前記カソード電極が重畳されて有機発光ダイオードが形成される、
請求項1に記載の有機発光ダイオード表示装置。 - 前記接続端子は、前記アノード電極と同一の物質を含む、請求項4に記載の有機発光ダイオード表示装置。
- 前記遮光層と前記補助配線を覆い前記絶縁膜の下に積層されたバッファ層と、
前記絶縁膜上に配置された前記薄膜トランジスタのドレイン電極と
をさらに含み、
前記補助カソード電極は、前記絶縁膜の上において、前記ドレイン電極と同一の物質を含む、
請求項4に記載の有機発光ダイオード表示装置。 - 前記アンダーカット開口部において、
前記補助カソード電極の前記一側端部、前記接続端子の前記側面、及び前記カソード電極は、直接接触して物理的及び電気的に接続されている、請求項1に記載の有機発光ダイオード表示装置。
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KR1020170181345A KR102482990B1 (ko) | 2017-12-27 | 2017-12-27 | 상부 발광형 유기발광 다이오드 표시장치 |
KR10-2017-0181345 | 2017-12-27 |
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JP2019121598A JP2019121598A (ja) | 2019-07-22 |
JP6771015B2 true JP6771015B2 (ja) | 2020-10-21 |
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US (1) | US10403845B2 (ja) |
JP (1) | JP6771015B2 (ja) |
KR (1) | KR102482990B1 (ja) |
CN (1) | CN109979964B (ja) |
TW (1) | TWI699917B (ja) |
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KR102483073B1 (ko) * | 2017-12-06 | 2022-12-30 | 엘지디스플레이 주식회사 | 유기발광 표시장치 |
KR102498288B1 (ko) * | 2017-12-22 | 2023-02-09 | 엘지디스플레이 주식회사 | 유기발광 표시장치 및 이의 제조방법 |
KR102578350B1 (ko) * | 2018-11-27 | 2023-09-13 | 엘지디스플레이 주식회사 | 표시 장치 |
TWI757962B (zh) * | 2020-11-09 | 2022-03-11 | 友達光電股份有限公司 | 有機發光二極體顯示面板 |
CN112952023B (zh) * | 2021-02-20 | 2022-11-04 | 合肥鑫晟光电科技有限公司 | 显示基板及其制备方法、显示装置 |
CN113345945B (zh) * | 2021-05-31 | 2022-12-23 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制作方法、显示装置 |
CN113972252B (zh) * | 2021-10-13 | 2023-04-07 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及电子设备 |
CN114141852B (zh) * | 2021-11-30 | 2023-05-05 | 深圳市华星光电半导体显示技术有限公司 | 柔性显示面板及柔性显示装置 |
CN114156330A (zh) * | 2021-12-02 | 2022-03-08 | 惠州华星光电显示有限公司 | 显示面板的制作方法及显示面板 |
CN114171566B (zh) * | 2021-12-02 | 2023-05-30 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
KR20230091546A (ko) * | 2021-12-16 | 2023-06-23 | 엘지디스플레이 주식회사 | 발광 소자를 포함하는 디스플레이 장치 |
KR20230094650A (ko) * | 2021-12-21 | 2023-06-28 | 엘지디스플레이 주식회사 | 전계 발광 표시장치 |
KR20230096533A (ko) | 2021-12-23 | 2023-06-30 | 엘지디스플레이 주식회사 | 리페어 구조를 갖는 전계 발광 표시장치 |
CN114664912A (zh) * | 2022-03-28 | 2022-06-24 | 深圳市华星光电半导体显示技术有限公司 | 有机发光二极管显示面板及其制造方法 |
CN114706249B (zh) * | 2022-06-07 | 2022-09-20 | 惠科股份有限公司 | 显示面板及显示装置 |
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KR100712111B1 (ko) * | 2004-12-14 | 2007-04-27 | 삼성에스디아이 주식회사 | 보조 전극 라인을 구비하는 유기전계발광소자 및 그의제조 방법 |
CN103715231B (zh) * | 2013-12-31 | 2016-11-23 | 京东方科技集团股份有限公司 | 有机发光显示面板、显示装置 |
KR20160006520A (ko) * | 2014-07-09 | 2016-01-19 | 엘지디스플레이 주식회사 | 유기전계발광 표시장치 및 그 제조방법 |
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KR102374833B1 (ko) * | 2014-11-25 | 2022-03-15 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
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KR102575459B1 (ko) | 2015-07-31 | 2023-09-06 | 엘지디스플레이 주식회사 | 유기발광 표시장치 및 이의 제조방법 |
KR102405695B1 (ko) * | 2015-08-31 | 2022-06-03 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102578834B1 (ko) * | 2015-11-30 | 2023-09-15 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
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EP3240036B1 (en) * | 2016-04-29 | 2024-05-01 | LG Display Co., Ltd. | Organic light-emitting display device and method of manufacturing the same |
KR102593335B1 (ko) * | 2016-06-10 | 2023-10-23 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그의 제조방법 |
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2017
- 2017-12-27 KR KR1020170181345A patent/KR102482990B1/ko active IP Right Grant
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2018
- 2018-10-26 CN CN201811258407.9A patent/CN109979964B/zh active Active
- 2018-11-13 US US16/188,820 patent/US10403845B2/en active Active
- 2018-12-14 JP JP2018233962A patent/JP6771015B2/ja active Active
- 2018-12-26 TW TW107147071A patent/TWI699917B/zh active
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TWI699917B (zh) | 2020-07-21 |
US20190198799A1 (en) | 2019-06-27 |
CN109979964A (zh) | 2019-07-05 |
KR102482990B1 (ko) | 2022-12-29 |
JP2019121598A (ja) | 2019-07-22 |
KR20190079265A (ko) | 2019-07-05 |
CN109979964B (zh) | 2022-11-08 |
US10403845B2 (en) | 2019-09-03 |
TW201929283A (zh) | 2019-07-16 |
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