JP6767379B2 - ボディ接続を伴うスイッチトランジスタを有するｒｆ回路 - Google Patents

ボディ接続を伴うスイッチトランジスタを有するｒｆ回路 Download PDF

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JP6767379B2
JP6767379B2 JP2017545968A JP2017545968A JP6767379B2 JP 6767379 B2 JP6767379 B2 JP 6767379B2 JP 2017545968 A JP2017545968 A JP 2017545968A JP 2017545968 A JP2017545968 A JP 2017545968A JP 6767379 B2 JP6767379 B2 JP 6767379B2
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voltage
circuit
control voltage
gate
control
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Japanese (ja)
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JP2018513582A (ja
JP2018513582A5 (enExample
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マックス・サミュエル・アーバイン
クリント・ケマーリング
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

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  • Electronic Switches (AREA)
  • Transceivers (AREA)
JP2017545968A 2015-03-06 2016-03-04 ボディ接続を伴うスイッチトランジスタを有するｒｆ回路 Active JP6767379B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14/640,377 2015-03-06
US14/640,377 US9503074B2 (en) 2015-03-06 2015-03-06 RF circuit with switch transistor with body connection
US14/694,707 US9900001B2 (en) 2015-03-06 2015-04-23 RF circuit with switch transistor with body connection
US14/694,707 2015-04-23
PCT/US2016/020908 WO2016144762A2 (en) 2015-03-06 2016-03-04 Rf circuit with switch transistor with body connection

Publications (3)

Publication Number Publication Date
JP2018513582A JP2018513582A (ja) 2018-05-24
JP2018513582A5 JP2018513582A5 (enExample) 2019-03-28
JP6767379B2 true JP6767379B2 (ja) 2020-10-14

Family

ID=56849749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017545968A Active JP6767379B2 (ja) 2015-03-06 2016-03-04 ボディ接続を伴うスイッチトランジスタを有するｒｆ回路

Country Status (6)

Country Link
US (5) US9503074B2 (enExample)
EP (1) EP3266106A2 (enExample)
JP (1) JP6767379B2 (enExample)
KR (1) KR102568239B1 (enExample)
CN (2) CN112073041A (enExample)
WO (1) WO2016144762A2 (enExample)

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US9503074B2 (en) 2015-03-06 2016-11-22 Qualcomm Incorporated RF circuit with switch transistor with body connection
US10884050B2 (en) * 2016-06-21 2021-01-05 Psemi Corporation Test of stacked transistors
US10135240B2 (en) 2016-06-27 2018-11-20 Intel IP Corporation Stacked switch circuit having shoot through current protection
US10361697B2 (en) * 2016-12-23 2019-07-23 Skyworks Solutions, Inc. Switch linearization by compensation of a field-effect transistor
US10475816B2 (en) * 2017-10-06 2019-11-12 Qualcomm Incorporated Body current bypass resistor
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
KR102069633B1 (ko) * 2018-07-10 2020-01-23 삼성전기주식회사 제어 버퍼 회로 및 고주파 스위치 장치
US10733391B1 (en) * 2019-03-08 2020-08-04 Analog Devices International Unlimited Company Switching scheme for low offset switched-capacitor integrators
US11496130B2 (en) * 2020-01-19 2022-11-08 Smarter Microelectronics (Guang Zhou) Co., Ltd. Radio frequency switch circuit and method for controlling circuit
US11863227B2 (en) 2021-10-25 2024-01-02 Analog Devices International Unlimited Company Radio frequency switches with fast switching speed
CN119995574B (zh) * 2025-01-02 2025-10-31 锐石创芯(深圳)半导体有限公司 射频开关、射频前端模组及电子设备

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CN101442302B (zh) * 2007-11-20 2010-11-03 盛群半导体股份有限公司 栅极驱动电路及其驱动方法
US7859009B1 (en) 2008-06-17 2010-12-28 Rf Micro Devices, Inc. Integrated lateral high-voltage diode and thyristor
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JP5661448B2 (ja) * 2010-12-15 2015-01-28 サムソン エレクトロ−メカニックス カンパニーリミテッド． 高周波スイッチ
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Also Published As

Publication number Publication date
WO2016144762A2 (en) 2016-09-15
US11539360B2 (en) 2022-12-27
US20180109252A1 (en) 2018-04-19
US10326439B2 (en) 2019-06-18
US20190273490A1 (en) 2019-09-05
KR102568239B1 (ko) 2023-08-17
JP2018513582A (ja) 2018-05-24
US20160261262A1 (en) 2016-09-08
CN107278351B (zh) 2021-01-08
KR20170125036A (ko) 2017-11-13
US9503074B2 (en) 2016-11-22
US9900001B2 (en) 2018-02-20
CN112073041A (zh) 2020-12-11
US10756724B2 (en) 2020-08-25
EP3266106A2 (en) 2018-01-10
WO2016144762A3 (en) 2016-10-20
CN107278351A (zh) 2017-10-20
US20160261265A1 (en) 2016-09-08
US20200350906A1 (en) 2020-11-05

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