CN112073041A - 包括具有体极连接的开关晶体管的rf电路 - Google Patents

包括具有体极连接的开关晶体管的rf电路 Download PDF

Info

Publication number
CN112073041A
CN112073041A CN202010894258.6A CN202010894258A CN112073041A CN 112073041 A CN112073041 A CN 112073041A CN 202010894258 A CN202010894258 A CN 202010894258A CN 112073041 A CN112073041 A CN 112073041A
Authority
CN
China
Prior art keywords
voltage
switching transistor
control voltage
gate
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010894258.6A
Other languages
English (en)
Chinese (zh)
Inventor
M·S·奥贝恩
C·科梅林格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN112073041A publication Critical patent/CN112073041A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Electronic Switches (AREA)
  • Transceivers (AREA)
CN202010894258.6A 2015-03-06 2016-03-04 包括具有体极连接的开关晶体管的rf电路 Pending CN112073041A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14/640,377 2015-03-06
US14/640,377 US9503074B2 (en) 2015-03-06 2015-03-06 RF circuit with switch transistor with body connection
US14/694,707 US9900001B2 (en) 2015-03-06 2015-04-23 RF circuit with switch transistor with body connection
US14/694,707 2015-04-23
CN201680012669.XA CN107278351B (zh) 2015-03-06 2016-03-04 包括具有体极连接的开关晶体管的rf电路

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201680012669.XA Division CN107278351B (zh) 2015-03-06 2016-03-04 包括具有体极连接的开关晶体管的rf电路

Publications (1)

Publication Number Publication Date
CN112073041A true CN112073041A (zh) 2020-12-11

Family

ID=56849749

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202010894258.6A Pending CN112073041A (zh) 2015-03-06 2016-03-04 包括具有体极连接的开关晶体管的rf电路
CN201680012669.XA Active CN107278351B (zh) 2015-03-06 2016-03-04 包括具有体极连接的开关晶体管的rf电路

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201680012669.XA Active CN107278351B (zh) 2015-03-06 2016-03-04 包括具有体极连接的开关晶体管的rf电路

Country Status (6)

Country Link
US (5) US9503074B2 (enExample)
EP (1) EP3266106A2 (enExample)
JP (1) JP6767379B2 (enExample)
KR (1) KR102568239B1 (enExample)
CN (2) CN112073041A (enExample)
WO (1) WO2016144762A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9503074B2 (en) 2015-03-06 2016-11-22 Qualcomm Incorporated RF circuit with switch transistor with body connection
US10884050B2 (en) * 2016-06-21 2021-01-05 Psemi Corporation Test of stacked transistors
US10135240B2 (en) 2016-06-27 2018-11-20 Intel IP Corporation Stacked switch circuit having shoot through current protection
US10361697B2 (en) * 2016-12-23 2019-07-23 Skyworks Solutions, Inc. Switch linearization by compensation of a field-effect transistor
US10475816B2 (en) * 2017-10-06 2019-11-12 Qualcomm Incorporated Body current bypass resistor
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
KR102069633B1 (ko) * 2018-07-10 2020-01-23 삼성전기주식회사 제어 버퍼 회로 및 고주파 스위치 장치
US10733391B1 (en) * 2019-03-08 2020-08-04 Analog Devices International Unlimited Company Switching scheme for low offset switched-capacitor integrators
US11496130B2 (en) * 2020-01-19 2022-11-08 Smarter Microelectronics (Guang Zhou) Co., Ltd. Radio frequency switch circuit and method for controlling circuit
US11863227B2 (en) 2021-10-25 2024-01-02 Analog Devices International Unlimited Company Radio frequency switches with fast switching speed
CN119995574B (zh) * 2025-01-02 2025-10-31 锐石创芯(深圳)半导体有限公司 射频开关、射频前端模组及电子设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5689144A (en) * 1996-05-15 1997-11-18 Siliconix Incorporated Four-terminal power MOSFET switch having reduced threshold voltage and on-resistance
CN103929163A (zh) * 2013-01-15 2014-07-16 特里奎恩特半导体公司 具有电阻分压器的开关装置

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5818099A (en) 1996-10-03 1998-10-06 International Business Machines Corporation MOS high frequency switch circuit using a variable well bias
JP2001186007A (ja) * 1999-12-24 2001-07-06 Sharp Corp 金属酸化膜半導体トランジスタ回路およびそれを用いた半導体集積回路
US6201761B1 (en) * 2000-01-26 2001-03-13 Advanced Micro Devices, Inc. Field effect transistor with controlled body bias
US7071799B2 (en) * 2003-10-23 2006-07-04 Broadcom Corporation High performance switch for switched inductor tuned RF circuit
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US7772648B1 (en) 2006-09-13 2010-08-10 Rf Micro Devices, Inc. Performance enhanced silicon-on-insulator technology
US20080217727A1 (en) 2007-03-11 2008-09-11 Skyworks Solutions, Inc. Radio frequency isolation for SOI transistors
CN101442302B (zh) * 2007-11-20 2010-11-03 盛群半导体股份有限公司 栅极驱动电路及其驱动方法
US7859009B1 (en) 2008-06-17 2010-12-28 Rf Micro Devices, Inc. Integrated lateral high-voltage diode and thyristor
US7989889B1 (en) 2008-06-17 2011-08-02 Rf Micro Devices, Inc. Integrated lateral high-voltage metal oxide semiconductor field effect transistor
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
JP2010278110A (ja) * 2009-05-27 2010-12-09 Toshiba Corp 半導体装置及び高周波スイッチ回路
JP2010278407A (ja) * 2009-06-01 2010-12-09 Panasonic Corp 半導体装置
US8058922B2 (en) 2009-07-28 2011-11-15 Qualcomm, Incorporated Switch with improved biasing
US8395435B2 (en) 2009-07-30 2013-03-12 Qualcomm, Incorporated Switches with bias resistors for even voltage distribution
US8461903B1 (en) 2009-09-11 2013-06-11 Rf Micro Devices, Inc. SOI switch enhancement
JP2011193191A (ja) 2010-03-15 2011-09-29 Renesas Electronics Corp 半導体集積回路およびそれを内蔵した高周波モジュール
JP5571596B2 (ja) * 2010-07-02 2014-08-13 ルネサスエレクトロニクス株式会社 スイッチ回路装置
JP5661448B2 (ja) * 2010-12-15 2015-01-28 サムソン エレクトロ−メカニックス カンパニーリミテッド． 高周波スイッチ
JP5814547B2 (ja) 2010-12-20 2015-11-17 サムソン エレクトロ−メカニックス カンパニーリミテッド． 高周波スイッチ
WO2012125504A2 (en) 2011-03-11 2012-09-20 Skyworks Solutions, Inc. Dual mode serial/parallel interface and use thereof in improved wireless devices and switching components
JP5733624B2 (ja) * 2011-06-24 2015-06-10 日立金属株式会社 高周波スイッチ回路、及び複合高周波スイッチ回路
US20130029614A1 (en) * 2011-07-29 2013-01-31 Samsung Electro-Mechanics Company Systems, Methods, and Apparatuses for Negative-Charge-Pump-Based Antenna Switch Controllers Utilizing Battery Supplies
CN103078618B (zh) * 2011-10-26 2015-08-12 力旺电子股份有限公司 电压开关电路
US9035716B2 (en) 2012-01-20 2015-05-19 Samsung Electro-Mechanics Co., Ltd. High frequency switch
US8829967B2 (en) 2012-06-27 2014-09-09 Triquint Semiconductor, Inc. Body-contacted partially depleted silicon on insulator transistor
US9160328B2 (en) * 2012-07-07 2015-10-13 Skyworks Solutions, Inc. Circuits, devices, methods and applications related to silicon-on-insulator based radio-frequency switches
US9059702B2 (en) 2012-07-07 2015-06-16 Skyworks Solutions, Inc. Switch linearization by non-linear compensation of a field-effect transistor
US20150249449A1 (en) 2012-09-27 2015-09-03 QUALCOMM INCORPORATED 5775 Morehouse DriveSan Diego92121-1714 Power switch cell with adaptive body bias
US9214932B2 (en) * 2013-02-11 2015-12-15 Triquint Semiconductor, Inc. Body-biased switching device
US9240770B2 (en) 2013-03-15 2016-01-19 Rf Micro Devices, Inc. Harmonic cancellation circuit for an RF switch branch
US9595959B2 (en) 2013-09-06 2017-03-14 Ferfics Limited Radio frequency switch with improved linearity
KR101952857B1 (ko) * 2013-12-20 2019-02-27 삼성전기주식회사 스위칭 회로 및 이를 포함하는 고주파 스위치
KR101901694B1 (ko) * 2014-05-09 2018-09-27 삼성전기 주식회사 고주파 스위치
US9503074B2 (en) 2015-03-06 2016-11-22 Qualcomm Incorporated RF circuit with switch transistor with body connection

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5689144A (en) * 1996-05-15 1997-11-18 Siliconix Incorporated Four-terminal power MOSFET switch having reduced threshold voltage and on-resistance
CN103929163A (zh) * 2013-01-15 2014-07-16 特里奎恩特半导体公司 具有电阻分压器的开关装置

Also Published As

Publication number Publication date
WO2016144762A2 (en) 2016-09-15
US11539360B2 (en) 2022-12-27
US20180109252A1 (en) 2018-04-19
US10326439B2 (en) 2019-06-18
US20190273490A1 (en) 2019-09-05
KR102568239B1 (ko) 2023-08-17
JP2018513582A (ja) 2018-05-24
US20160261262A1 (en) 2016-09-08
CN107278351B (zh) 2021-01-08
KR20170125036A (ko) 2017-11-13
US9503074B2 (en) 2016-11-22
US9900001B2 (en) 2018-02-20
US10756724B2 (en) 2020-08-25
JP6767379B2 (ja) 2020-10-14
EP3266106A2 (en) 2018-01-10
WO2016144762A3 (en) 2016-10-20
CN107278351A (zh) 2017-10-20
US20160261265A1 (en) 2016-09-08
US20200350906A1 (en) 2020-11-05

Similar Documents

Publication Publication Date Title
CN107278351B (zh) 包括具有体极连接的开关晶体管的rf电路
US9461643B2 (en) High freuency semiconductor switch and wireless device
KR20080050325A (ko) 다중 스택 구조에서 바디 스위칭 및 기판 접합 다이오드제어를 이용한 고출력 상보형 금속 산화막 반도체 안테나스위치 시스템, 방법 및 장치
KR101452072B1 (ko) 고주파 스위치 회로
JP7043117B2 (ja) アナログ電気入力信号を切り替えるためのスイッチ装置
CN103219979B (zh) 射频切换器及其辅助电压产生单元和产生辅助电压的方法
JP2005006143A (ja) 高周波スイッチ回路および半導体装置
JP2010220200A (ja) 導通切替回路、導通切替回路ブロック、及び導通切替回路の動作方法
CN101102103A (zh) 射频开关电路、射频开关装置和发射机模块装置
US9123796B2 (en) Semiconductor device
KR101952857B1 (ko) 스위칭 회로 및 이를 포함하는 고주파 스위치
CN115189682A (zh) 一种射频开关电路
US10411703B1 (en) Impedance matched clock driver with amplitude control
JP6996934B2 (ja) 高周波スイッチ装置
US10826497B2 (en) Impedance matched clock driver with amplitude control
JP2007243410A (ja) 高周波用スイッチ回路及びこれを用いた半導体装置
JP2016174240A (ja) 半導体スイッチ
CN218183326U (zh) 一种模拟开关
CN117713779A (zh) 一种模拟开关
CN117713777A (zh) 一种模拟开关

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination