JP2018513582A5 - - Google Patents

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Publication number
JP2018513582A5
JP2018513582A5 JP2017545968A JP2017545968A JP2018513582A5 JP 2018513582 A5 JP2018513582 A5 JP 2018513582A5 JP 2017545968 A JP2017545968 A JP 2017545968A JP 2017545968 A JP2017545968 A JP 2017545968A JP 2018513582 A5 JP2018513582 A5 JP 2018513582A5
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JP
Japan
Prior art keywords
voltage
switch transistor
positive bias
circuit
gate
Prior art date
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Application number
JP2017545968A
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English (en)
Japanese (ja)
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JP2018513582A (ja
JP6767379B2 (ja
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Priority claimed from US14/640,377 external-priority patent/US9503074B2/en
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Publication of JP2018513582A publication Critical patent/JP2018513582A/ja
Publication of JP2018513582A5 publication Critical patent/JP2018513582A5/ja
Application granted granted Critical
Publication of JP6767379B2 publication Critical patent/JP6767379B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2017545968A 2015-03-06 2016-03-04 ボディ接続を伴うスイッチトランジスタを有するｒｆ回路 Active JP6767379B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14/640,377 2015-03-06
US14/640,377 US9503074B2 (en) 2015-03-06 2015-03-06 RF circuit with switch transistor with body connection
US14/694,707 US9900001B2 (en) 2015-03-06 2015-04-23 RF circuit with switch transistor with body connection
US14/694,707 2015-04-23
PCT/US2016/020908 WO2016144762A2 (en) 2015-03-06 2016-03-04 Rf circuit with switch transistor with body connection

Publications (3)

Publication Number Publication Date
JP2018513582A JP2018513582A (ja) 2018-05-24
JP2018513582A5 true JP2018513582A5 (enExample) 2019-03-28
JP6767379B2 JP6767379B2 (ja) 2020-10-14

Family

ID=56849749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017545968A Active JP6767379B2 (ja) 2015-03-06 2016-03-04 ボディ接続を伴うスイッチトランジスタを有するｒｆ回路

Country Status (6)

Country Link
US (5) US9503074B2 (enExample)
EP (1) EP3266106A2 (enExample)
JP (1) JP6767379B2 (enExample)
KR (1) KR102568239B1 (enExample)
CN (2) CN112073041A (enExample)
WO (1) WO2016144762A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
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US9503074B2 (en) 2015-03-06 2016-11-22 Qualcomm Incorporated RF circuit with switch transistor with body connection
US10884050B2 (en) * 2016-06-21 2021-01-05 Psemi Corporation Test of stacked transistors
US10135240B2 (en) 2016-06-27 2018-11-20 Intel IP Corporation Stacked switch circuit having shoot through current protection
US10361697B2 (en) * 2016-12-23 2019-07-23 Skyworks Solutions, Inc. Switch linearization by compensation of a field-effect transistor
US10475816B2 (en) * 2017-10-06 2019-11-12 Qualcomm Incorporated Body current bypass resistor
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
KR102069633B1 (ko) * 2018-07-10 2020-01-23 삼성전기주식회사 제어 버퍼 회로 및 고주파 스위치 장치
US10733391B1 (en) * 2019-03-08 2020-08-04 Analog Devices International Unlimited Company Switching scheme for low offset switched-capacitor integrators
US11496130B2 (en) * 2020-01-19 2022-11-08 Smarter Microelectronics (Guang Zhou) Co., Ltd. Radio frequency switch circuit and method for controlling circuit
US11863227B2 (en) 2021-10-25 2024-01-02 Analog Devices International Unlimited Company Radio frequency switches with fast switching speed
CN119995574B (zh) * 2025-01-02 2025-10-31 锐石创芯(深圳)半导体有限公司 射频开关、射频前端模组及电子设备

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US9503074B2 (en) 2015-03-06 2016-11-22 Qualcomm Incorporated RF circuit with switch transistor with body connection

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