JP6762738B2 - 半導体素子の製造装置及びこれを用いた半導体素子の製造方法 - Google Patents
半導体素子の製造装置及びこれを用いた半導体素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 87
- 238000004519 manufacturing process Methods 0.000 title claims description 75
- 238000000034 method Methods 0.000 claims description 123
- 229910052739 hydrogen Inorganic materials 0.000 claims description 101
- 239000001257 hydrogen Substances 0.000 claims description 100
- 230000008569 process Effects 0.000 claims description 95
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 74
- 238000006356 dehydrogenation reaction Methods 0.000 claims description 59
- 239000010409 thin film Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 40
- 230000001678 irradiating effect Effects 0.000 claims description 32
- 239000010408 film Substances 0.000 claims description 23
- 238000012545 processing Methods 0.000 claims description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- 150000002431 hydrogen Chemical class 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 5
- 230000000052 comparative effect Effects 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 16
- -1 hydrogen ions Chemical class 0.000 description 15
- 238000010586 diagram Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000008016 vaporization Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C30B28/00—Production of homogeneous polycrystalline material with defined structure
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Description
S1:第1の被処理物
S2:第2の被処理物
S3:第3の被処理物
1:半導体素子の製造装置
100:チャンバ
110:上部チャンバ
130:下部チャンバ
200:ステージ
300:熱源ユニット
310:第1のランプ
330:第2のランプ
400:制御部
A:1次光源
B:2次光源
Claims (16)
- 基板及び前記基板の上に水素を含有して形成される被処理層を含む被処理物が処理される空間を提供するチャンバと、
前記チャンバ内に配置され、上面に前記被処理物を載置するステージと、
前記ステージの上方に離隔配置され、前記被処理物に2段階に亘って光を照射して脱水素化を行うための熱源ユニットと、
前記熱源ユニットに接続されて2段階に亘って光が照射されるように前記熱源ユニットを制御する制御部と、
を備え、
前記熱源ユニットは、
前記被処理物上の全体の領域に紫外線を照射する第1のランプと、
前記紫外線が照射された被処理物上の一部の領域に赤外線を照射する第2のランプと、
を備える半導体素子の製造装置。 - 前記第1のランプは、前記第2のランプを囲繞するように配置される請求項1に記載の半導体素子の製造装置。
- 前記制御部は、前記第1のランプが作動した後に前記第2のランプが作動するように前記熱源ユニットを制御する請求項1又は2に記載の半導体素子の製造装置。
- 前記制御部は、
前記第1のランプの作動が止まると同時に前記第2のランプを作動する請求項3に記載の半導体素子の製造装置。 - 前記制御部は、
前記第1のランプの作動が止まった後に時間差をおいて前記第2のランプを作動する請求項3に記載の半導体素子の製造装置。 - 前記制御部は、
前記第1のランプの作動タイミングと前記第2のランプの作動タイミングとを重ならせる請求項3に記載の半導体素子の製造装置。 - 前記被処理層は、前記基板の上に水素(H)を含むソースを用いて化学気相蒸着CVD方法により形成した薄膜である請求項1に記載の半導体素子の製造装置。
- ソース及びドレイン電極を有する半導体素子を製造する方法であって、
基板の上に水素を含有する被処理層を形成する過程と、
前記被処理層に2段階に亘って光を照射して脱水素化を行う過程と、
を含み、
前記脱水素化を行う過程は、
前記被処理層上の全体の領域に紫外線を照射する1次光照射過程と、
紫外線系の光が照射された被処理物上の一部の領域に赤外線系の光を照射する2次光照射過程と、
を含む半導体素子の製造方法。 - 前記1次光照射過程では、前記被処理層内のSi−Hの化学的な結合を分離し、
前記2次光照射過程では、前記1次光照射過程により分離された水素(H)を気化させる請求項8に記載の半導体素子の製造方法。 - 前記脱水素化を行う過程は、350℃〜400℃において行われる請求項8に記載の半導体素子の製造方法。
- 前記脱水素化を行う過程は、
前記基板の上にゲート電極を形成し、前記ゲート電極の上に前記被処理層としてゲート絶縁膜を形成する過程の後に行われる請求項8乃至請求項10のうちのいずれか一項に記載の半導体素子の製造方法。 - 前記脱水素化を行う過程は、
前記基板の上に前記ソース及びドレイン電極を形成し、前記ソース及びドレイン電極の上にアクティブパターンを形成し、前記アクティブパターンの上に前記被処理層としてゲート絶縁膜を形成する過程の後に行われる請求項8乃至請求項10のうちのいずれか一項に記載の半導体素子の製造方法。 - 前記脱水素化を行う過程は、
前記基板の上に前記被処理層として非晶質シリコンを形成する過程の後に行われる請求項8乃至請求項10のうちのいずれか一項に記載の半導体素子の製造方法。 - 前記1次光照射過程及び前記2次光照射過程は、同一の空間において行われる請求項9に記載の半導体素子の製造方法。
- 前記1次光照射過程及び前記2次光照射過程は、互いに異なる空間において行われる請求項9に記載の半導体素子の製造方法。
- 前記被処理層は、前記基板の上に水素(H)を含むソースを用いて化学気相蒸着CVD方法により形成した薄膜である請求項8に記載の半導体素子の製造方法。
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KR1020150042994A KR101818721B1 (ko) | 2015-03-27 | 2015-03-27 | 반도체 소자 제조 장치 및 이를 이용한 반도체 소자 제조 방법 |
KR10-2015-0042994 | 2015-03-27 |
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JP6762738B2 true JP6762738B2 (ja) | 2020-09-30 |
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US (1) | US10106914B2 (ja) |
JP (1) | JP6762738B2 (ja) |
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KR20190035036A (ko) * | 2017-09-25 | 2019-04-03 | 삼성전자주식회사 | 박막 형성 장치 및 이를 이용한 비정질 실리콘 막 형성방법 |
KR20190062695A (ko) * | 2017-11-29 | 2019-06-07 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치 |
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JP3409542B2 (ja) * | 1995-11-21 | 2003-05-26 | ソニー株式会社 | 半導体装置の製造方法 |
JP2002033483A (ja) * | 2000-07-17 | 2002-01-31 | Sony Corp | 薄膜半導体装置の製造方法 |
JP2002231628A (ja) * | 2001-02-01 | 2002-08-16 | Sony Corp | 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置 |
US7622378B2 (en) * | 2005-11-09 | 2009-11-24 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
JP5159295B2 (ja) | 2007-12-26 | 2013-03-06 | キヤノン株式会社 | 自動焦点調節装置および撮像装置 |
US7863201B2 (en) | 2008-03-24 | 2011-01-04 | Samsung Electronics Co., Ltd. | Methods of forming field effect transistors having silicided source/drain contacts with low contact resistance |
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US9252279B2 (en) * | 2011-08-31 | 2016-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP5418563B2 (ja) * | 2011-09-29 | 2014-02-19 | ウシオ電機株式会社 | 酸化物半導体を用いた薄膜トランジスタの製造方法および製造装置 |
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US10106914B2 (en) | 2018-10-23 |
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