JP6758427B2 - ディスプレイデバイスおよびその製造方法 - Google Patents
ディスプレイデバイスおよびその製造方法 Download PDFInfo
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- JP6758427B2 JP6758427B2 JP2018567934A JP2018567934A JP6758427B2 JP 6758427 B2 JP6758427 B2 JP 6758427B2 JP 2018567934 A JP2018567934 A JP 2018567934A JP 2018567934 A JP2018567934 A JP 2018567934A JP 6758427 B2 JP6758427 B2 JP 6758427B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 89
- 229920005591 polysilicon Polymers 0.000 claims description 89
- 239000003990 capacitor Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 41
- 230000000875 corresponding effect Effects 0.000 claims description 22
- 238000000059 patterning Methods 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 238000012360 testing method Methods 0.000 claims description 11
- 230000003071 parasitic effect Effects 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 230000002596 correlated effect Effects 0.000 claims description 2
- 230000008569 process Effects 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0408—Integration of the drivers onto the display substrate
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
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- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0267—Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Description
基板を提供するステップ;
前記基板上にポリシリコン層を形成するステップ;
前記ポリシリコン層をパターン化して複数のポリシリコンブロックを形成するステップ;
前記複数のポリシリコンブロックに対してイオンをインプラントするステップ;
前記複数のポリシリコンブロック上にゲート絶縁層を形成するステップ;
前記ゲート絶縁層上に第1導電層を形成するステップ;
前記第1導電層をパターン化して複数のデータラインを形成するステップであって、各前記データラインは対応する前記ポリシリコンブロックと部分的に重なり、これにより複数の補償キャパシタを形成する、ステップ;
を有する。
1)基板100を提供するステップ;
2)基板100上にポリシリコン層を形成するステップ;
3)ポリシリコン層をパターン化して複数のポリシリコンブロック110を形成するステップ;
4)ポリシリコンブロック110に対してイオンをインプラントするステップ;
5)複数のポリシリコンブロック110上にゲート絶縁層(図示せず)を形成するステップ;
6)ゲート絶縁層上に第1導電層を形成するステップ;
7)第1導電層をパターン化して複数のデータライン120を形成するステップであって、複数のデータライン120はポリシリコンブロック110と部分的に重なって補償キャパシタを提供する、ステップ。
Claims (11)
- ディスプレイデバイスであって、
基板と、
前記基板上に順番で形成されたパターン化のポリシリコン層と、パターン化のゲート絶縁層と、およびパターン化の第1導電層と、
を備え、
前記パターン化のポリシリコン層は不純物をドープした複数のポリシリコンブロックを備え、前記パターン化の第1導電層は複数のデータラインを備え、各前記データラインは対応する前記ポリシリコンブロックと部分的に重なって補償キャパシタを形成しており、
前記補償キャパシタは前記データラインの寄生容量を補償し、前記補償キャパシタの補償キャパシタンスは前記データラインと前記ポリシリコンブロックとが重なっている面積に正比例している
ことを特徴とするディスプレイデバイス。 - 前記ディスプレイデバイスはさらに、それぞれ薄膜トランジスタとピクセルキャパシタを有する複数のピクセルセルを備え、前記パターン化のポリシリコン層はさらに、前記複数のピクセルセルの前記薄膜トランジスタの複数のソースとドレイン、および前記複数のピクセルセルの前記ピクセルキャパシタの複数の第1プレートとを備え、前記パターン化の第1導電層はさらに、前記複数のピクセルセルの前記薄膜トランジスタのゲートと前記複数のピクセルセルの前記ピクセルキャパシタの複数の第2プレートとを備える ことを特徴とする請求項1記載のディスプレイデバイス。
- 前記ディスプレイデバイスはさらに、複数のテスト回路を備え、
各前記データラインは、対応する前記ピクセルセルに接続された第1端部と、対応する前記テスト回路に接続された第2端部とを有する
ことを特徴とする請求項2記載のディスプレイデバイス。 - 前記ディスプレイデバイスはさらに、複数のGIP回路と、複数のピクセル接続ラインと、および複数の電力ラインとを備え、前記複数のピクセル接続ラインと前記複数の電力ラインは同じ層内に配置されるとともに同じ材料で作成されており、前記複数の電力ラインは前記複数のピクセルセルに接続されるとともに前記複数のピクセルセルに対して電力供給信号を提供するように構成されており、前記複数のピクセル接続ラインは前記複数のピクセルセルを前記複数のGIP回路に接続するように構成されている
ことを特徴とする請求項2記載のディスプレイデバイス。 - 前記ディスプレイデバイスはさらに、複数のピクセルセルを備え、
前記データラインと前記ポリシリコンブロックとが重なっているエリアは、前記データラインに接続されている前記ピクセルセルの個数と逆相関している
ことを特徴とする請求項1記載のディスプレイデバイス。 - ディスプレイデバイスを製造する方法であって、
基板を提供するステップと、
前記基板上にポリシリコン層を形成するステップと、
前記ポリシリコン層をパターン化して複数のポリシリコンブロックを形成するステップと、
前記複数のポリシリコンブロックに対してイオンをインプラントするステップと、
前記複数のポリシリコンブロック上にゲート絶縁層を形成するステップと、
前記ゲート絶縁層上に第1導電層を形成するステップと、
前記第1導電層をパターン化して複数のデータラインを形成するステップであって、各前記データラインは対応する前記ポリシリコンブロックと部分的に重なり、これにより補償キャパシタを形成する、ステップと、
を有し、
前記補償キャパシタは前記データラインの寄生容量を補償し、前記補償キャパシタの補償キャパシタンスは前記データラインと前記ポリシリコンブロックとが重なっている面積に正比例している
ことを特徴とする方法。 - 前記方法はさらに、前記ポリシリコン層をパターン化して複数のポリシリコンブロックを形成するステップが発生する時発生し、前記ポリシリコン層をパターン化して、複数のピクセルキャパシタの複数の第1プレートと、複数の薄膜トランジスタの複数のソースとドレインを形成するステップを有する
ことを特徴とする請求項6記載の方法。 - 前記方法はさらに、前記複数のポリシリコンブロックに対してイオンをインプラントするステップが発生する時発生し、前記複数のピクセルキャパシタの前記第1プレートに対してイオンをインプラントするステップを有する
ことを特徴とする請求項7記載の方法。 - 前記方法はさらに、前記第1導電層をパターン化して複数のデータラインを形成するステップが発生する時発生し、前記第1導電層をパターン化して、前記複数のピクセルキャパシタの複数の第2プレートと、前記複数の薄膜トランジスタの複数のゲートを形成するステップを有する
ことを特徴とする請求項7記載の方法。 - 前記方法はさらに、前記第1導電層をパターン化して複数のデータラインを形成するステップの後に発生し、前記パターン化した第1導電層上に第2導電層を形成するステップ、前記第2導電層をパターン化して複数のピクセル接続ラインと複数の電力ラインを形成するステップ、を有する
ことを特徴とする請求項6記載の方法。 - 前記方法はさらに、前記パターン化した第1導電層上に第2導電層を形成するステップの前に、かつ、前記第1導電層をパターン化して複数のデータラインを形成するステップの後に発生し、前記電力ラインを前記ポリシリコンブロックと接続するための複数のコンタクトホールを前記ポリシリコンブロックに形成するステップを有する
ことを特徴とする請求項10記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611147363.3A CN108231790B (zh) | 2016-12-13 | 2016-12-13 | 显示装置及其制造方法 |
CN201611147363.3 | 2016-12-13 | ||
PCT/CN2017/115604 WO2018108069A1 (zh) | 2016-12-13 | 2017-12-12 | 显示装置及其制造方法 |
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CN109523963B (zh) * | 2018-11-21 | 2020-10-16 | 惠科股份有限公司 | 一种显示装置的驱动电路和显示装置 |
CN114464644A (zh) * | 2020-11-09 | 2022-05-10 | 京东方科技集团股份有限公司 | 显示基板和显示装置 |
KR20220140093A (ko) * | 2021-04-08 | 2022-10-18 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
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JP4096585B2 (ja) * | 2001-03-19 | 2008-06-04 | セイコーエプソン株式会社 | 表示装置の製造方法及び表示装置並びに電子機器 |
KR100831235B1 (ko) | 2002-06-07 | 2008-05-22 | 삼성전자주식회사 | 박막 트랜지스터 기판 |
KR20060041949A (ko) | 2004-04-15 | 2006-05-12 | 미쓰비시덴키 가부시키가이샤 | 오프셋 보상기능을 갖는 구동회로 및 그것을 사용한 액정표시장치 |
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EP2085952B1 (en) | 2006-11-21 | 2016-08-10 | Sharp Kabushiki Kaisha | Active matrix substrate, display panel, and display |
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WO2009054166A1 (ja) * | 2007-10-24 | 2009-04-30 | Sharp Kabushiki Kaisha | 表示パネルおよび表示装置 |
JP2010249955A (ja) * | 2009-04-13 | 2010-11-04 | Global Oled Technology Llc | 表示装置 |
KR101736319B1 (ko) | 2010-12-14 | 2017-05-17 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
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JP5997958B2 (ja) | 2012-07-23 | 2016-09-28 | 株式会社ジャパンディスプレイ | 表示装置及びアレイ基板 |
CN103296030B (zh) * | 2012-07-25 | 2015-12-09 | 上海天马微电子有限公司 | Tft-lcd阵列基板 |
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CN103325688A (zh) * | 2013-06-17 | 2013-09-25 | 深圳市华星光电技术有限公司 | 薄膜晶体管的沟道形成方法及补偿电路 |
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US9190005B2 (en) * | 2014-03-05 | 2015-11-17 | Innolux Corporation | Display panel |
JP2015227974A (ja) | 2014-06-02 | 2015-12-17 | 株式会社ジャパンディスプレイ | 表示装置 |
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KR102507151B1 (ko) * | 2015-08-27 | 2023-03-08 | 티씨엘 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | 표시 장치 및 그 제조 방법 |
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CN105204248A (zh) * | 2015-10-10 | 2015-12-30 | 重庆京东方光电科技有限公司 | 一种阵列基板及显示装置 |
CN105513528B (zh) | 2016-02-04 | 2018-06-22 | 京东方科技集团股份有限公司 | 电容补偿电路、显示基板、显示装置及电容补偿方法 |
KR102503164B1 (ko) * | 2016-04-05 | 2023-02-24 | 삼성디스플레이 주식회사 | 표시 패널 및 이의 제조 방법 |
CN106449651B (zh) * | 2016-09-12 | 2019-05-21 | 厦门天马微电子有限公司 | 像素结构及显示装置 |
KR102430809B1 (ko) * | 2017-09-29 | 2022-08-09 | 엘지디스플레이 주식회사 | 양면 디스플레이 |
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US20190326334A1 (en) | 2019-10-24 |
KR102174662B1 (ko) | 2020-11-05 |
WO2018108069A1 (zh) | 2018-06-21 |
EP3528286A4 (en) | 2019-11-27 |
CN108231790A (zh) | 2018-06-29 |
CN108231790B (zh) | 2019-09-17 |
TWI663718B (zh) | 2019-06-21 |
TW201838159A (zh) | 2018-10-16 |
EP3528286B1 (en) | 2024-03-27 |
JP2020500321A (ja) | 2020-01-09 |
EP3528286A1 (en) | 2019-08-21 |
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