JP6720091B2 - ルミネッセント化合物の調合物 - Google Patents
ルミネッセント化合物の調合物 Download PDFInfo
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- JP6720091B2 JP6720091B2 JP2016574339A JP2016574339A JP6720091B2 JP 6720091 B2 JP6720091 B2 JP 6720091B2 JP 2016574339 A JP2016574339 A JP 2016574339A JP 2016574339 A JP2016574339 A JP 2016574339A JP 6720091 B2 JP6720091 B2 JP 6720091B2
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
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Description
本出願でのドナー基A(ドナー置換基とも呼ばれる)は、電子供与性基である基の意味で使用される。ドナー基の元で理解されるものは、当業者に周知である。ドナー基は、正の誘起効果(−I)および/または正の共鳴効果(−M)を有することが好ましい。ハムレット方程式によるパラメータの決定は、当業者に周知である。適切なドナー置換基は、特に、ジアリール-もしくはジヘテロアリールアミノ基とカルバゾール基もしくはインデノカルバゾールもしくはインドロカルバゾール等のカルバゾール誘導体であり、好ましくは、夫々、ブリッジVにまたはNを介して基Aに結合する。これらの基は、さらに置換されてもよい。
Hpは、極性の寄与を意味し、
Hhは、水素結合の寄与を意味する。
Hpは、極性の寄与を意味し、
Hhは、水素結合の寄与を意味し、
MVolは、モル体積を意味する。
本発明の調合物中に存在してよい上記さらなる化合物は、当業者に周知である。したがって、当業者は、広範囲の公知化合物から選択することができるであろう。
[LUMO(TADF)−HOMO(マトリックス)]は、[S1(TADF)−0.4eV]より大であり、
式中、S1(TADF)は、TADF化合物の第1励起一重項状態S1である。
LUMO(TADF)は、TADF化合物のLUMOエネルギーであり、HOMO(マトリックス)は、マトリックスのHOMOエネルギーである。
たとえば、InAs、InP、GaAs、GaP、InN、GaN、InSb、GaSb、AlP、AlAs、AlSb等のIII-V族元素およびたとえば、InAsP、CdSeTe、ZnCdSe、InGaAs等のそれらの混合物;
たとえば、PbSe、PbTeおよびPbS等のIV-VI族元素およびそれらの混合物;
たとえば、InSe、InTe、InS、GaSe等のIII-VI族元素およびInGaSe、InSeS等のそれらの混合物;
たとえば、SiおよびGeとその混合物等のIV族半導体および上記材料の混合物から選ばれる。
1.本発明による調合物により製造された電子素子、特に、有機エレクトロルミネッセント素子は、極めて良好な安定性を有する。特に、故障数は、真空蒸発により製造された電子素子と比べて、調合物により顕著に減じることができる。
2.本発明による調合物により製造された電子素子、特に、有機エレクトロルミネッセント素子は、先行技術からの電子素子と比べて、同等の効率と電圧を有する。
3.本発明による調合物により製造された電子素子、特に、有機エレクトロルミネッセント素子は、簡単に、安価で製造することができ、それゆえ、商業製品の大量生産に、特に適している。
4.本発明の調合物により、有機電子素子の層を、特に、複数の成分(たとえば、複数のマトリックス化合物)を含む有機エレクトロルミッセンス素子において、極めて簡単に、安価な方法で製造することができる。
5.本発明の調合物により、製造プロセスは、新たな要請に極めて容易に適合することができる。
例1
決定方法
HOMO、LUMO、一重項準位および三重項準位の決定
材料の分子軌道のエネルギー準位と、最低の三重項状態T1または最低の励起一重項状態S1のエネルギーとを、量子化学計算によって決定する。この目的のために、「ガウシアン09、改訂D.01」ソフトウエアパッケージ(Gaussian Inc.)を本願で使用する。金属を含まない有機物質(「org.」方法で示される)を計算するために、最初に、電荷0およびマルチプリシティ1による、準実験的方法AM1(ガウシアンインプットライン#AM1 opt)を使用して、幾何学的な最適化を実施する。続いて幾何学的な最適化を基準にして、電子基底状態および三重項準位についてのエネルギー計算(一点)を実施する。ここでは、6−31G(d)ベースセット(ガウシアンインプットライン"# B3PW91/6-31G(d) td=(50-50,nstates=4)")を用いるTDDFT(時間依存密度汎関数法)B3PW91を使用する(電荷0、マルチプリシティ1)。有機金属化合物(“org-m”法と示されている)に対しては、ジオメトリーは、ハートリー-フォック法およびLanL2MBベースセット(ガウシアンインプットライン"# HF/LanL2MB opt")(電荷0、マルチプリシティ1)を用いて最適化される。エネルギー計算は、前述したように有機物質と同じように実行されるが、「LanL2DZ」ベースセットが金属原子のために使用され、「6−31G(d)」ベースセットがリガンドのために使用されるという違いがある(ガウシアンインプットライン"#B3PW91/gen pseudo=lanl2 td=(50-50,nstates=4)")。エネルギー計算は、たとえば、ハートリー単位で、2つの電子により占有される最後の軌道としてHOMO(アルファocc.固有値)と、ハートリー単位で、最初に占有されなかった軌道としてLUMO(アルファvirt.固有値)とを与え、ここではHEhとLEhは、それぞれハートリー単位のHOMOエネルギーと、ハートリー単位のLUMOエネルギーとを表している。HOMO−1,HOMO−2,…LUMO+1,LUMO+2等のような他のエネルギー準位のエネルギーは、ハートリー単位で、同じようにして得られる。
ある電子遷移(電荷−移動状態)に関与する分子軌道の重複は、パラメーターΛを使用して説明される。パラメーターΛの意味は当業者によく知られている。先行技術で説明されている方法によるパラメーターの決定は、当業者にはまったく問題を与えない。本願の目的では、パラメーターΛは、D. J. Tozer et al. (J. Chem. Phys. 128, 044118 (2008))によれば、たとえば、Q-Chem, Inc.製のQ-Chem 4.1ソフトウエアパッケージで実施されている、PBHT法から決定される。ここでは分子軌道は前述した方法によって計算される。占有分子軌道ψiと非占有(バーチャル)分子軌道ψaとのすべての可能な対についての空間的重複を続いて、以下の式から決定する:
使用される発光層の50nm厚の膜が、石英基板に適用される。この膜は、発光層が1以上のさらなる素子(たとえば、量子ドット、無機半導体または有機半導体)をもたなければ、対応するOLEDの発光層と同じ濃度で同じ材料を含む。この場合、PLQEの測定のための膜は、さらなる素子は別として、すべての材料を含み、存在する材料の混合比はOLEDの発光層のものに対応する。OLEDの発光層の製造と同じ製造条件を、PLQEの測定のための膜の製造で使用する。この膜の吸収スペクトルを350−500nmの範囲の波長において測定する。この目的のために、試料の反射スペクトルR(λ)と透過スペクトルT(λ)とが入射角6°で測定される(すなわち、実質的に垂直の入射)。本願の目的では吸収スペクトルを、A(λ)=1−R(λ)−T(λ)として定義する。
減衰時間を、「PL量子効率(PLQE)の決定」で前述したように、製造された試料を使用して測定する。試料をレーザーパルス(波長266nm、パルス期間1.5ns、パルスエネルギー200μJ、ビーム直径4mm)により、室温で励起する。ここでは、試料を真空に位置させる(10−5ミリバール未満)。励起後(t=0として定義)、時間にわたる、発光されたフォトルミネッセンスの強度の変化を測定する。フォトルミネッセンスは、TADF化合物の即発蛍光が原因で、初めは急落を示す。時間の継続につれて、ゆっくりとした落下、即ち遅延蛍光が観察される(たとえば、H. Uoyama et al., Nature, vol. 492, no. 7428, pp. 234-238, 2012 と、K. Masui et al., Organic Electronics, vol. 14, no. 11, pp. 2721-2726, 2013を参照)。本願の意味では、減衰時間taは、遅延蛍光の減衰時間であり、次のように決定される:時間tdが選択され、その時間では、即発蛍光は遅延蛍光の強度を非常に下回るように減衰し、よってそれに続く減衰時間の決定は即発蛍光による影響を受けない。この選択は当業者により行われることができ、一般的な専門家の知識に属する。時間tdからの測定データについて、減衰時間ta=te−tdが決定される。ここでteはt=td後の時間であり、その時間では、強度は初めは、t=tdにおけるその値の1/eまで低下する。
素子例
以下の例で必要とされる材料を表1に示す。関連されるHOMOおよびLUMOエネルギー準位と、S1およびT1とを表2に示す。
厚さ50nmの構造化されたITO(インジウム錫酸化物)で被覆された、(laboratoryの食器洗浄機、Merck Extran洗浄剤)ガラス板を、湿式洗浄し、引き続き、15分間、窒素雰囲気中で250℃で加熱することにより乾燥させ、被覆前に130秒間、酸素プラズマで処理する。これらのプラズマ処理されたガラス板は、OLEDが適用される基板を形成する。基板は被覆前は真空に置かれる。被覆はプラズマ処理後、遅くても10分間で開始する。
40nmのBPA1、次いで60nmのIC1(60%):WB1(30%):D1(10%)、次いで10nmのST1、次いで40nmのST1(50%):LiQ(50%)、最後にカソードとして100nmのアルミニウムの層配列が、調製された基板へ熱蒸発により適用される。
40nmのBPA1、次いで60nmのIC1(30%):WB1(60%):D1(10%)、次いで10nmのST1、次いで40nmのST1(50%):LiQ(50%)、最後にカソードとして100nmのアルミニウムの層配列が、調製された基板へ熱蒸発により適用される。
以下説明する例では、溶液ベースおよび真空ベースで適用される層は、OLED内で組み合わされ、よって、発光層を含めこれまでの処理が、溶液から実行され、引き続く層では熱真空蒸発により行われる。
先行技術の例V1、V2と、本発明の例E1、E2では、夫々の処理タイプに適合された非常に類似した材料を使用している。特に、化合物D1をすべての例で、TADFとして使用する。
OLEDは例E1に対応するが、混合物IC2(60%):WB1(30%):D1(10%)を混合物IC2(45%):WB1(23%):D1(7%):QRod(25%)に置き換える違いがある。ここではQRodは赤色発光量子ロッドであり、これは直径3.9nmを有するCdSeコアを含み、長さ35nmの周囲ロッドはCdSからなる。使用するキャッピング剤はオクタデシルホスホン酸である。QRodのピーク波長は635nmであり、半値幅は30nmである。QRodのない発光層は、81%のPLQE(λexc=350nm)と、4.8μs(td=5μs)の減衰時間を示す。
Claims (14)
- 少なくとも一つのタイプの有機ルミネッセント化合物(TADF化合物)と有機溶媒もしくは種々の有機溶媒の混合物とを含む調合物であって、TADF化合物は、0.15eV以下の、最低三重項状態T1と第1励起一重項状態S1との間の離隔を有し、調合物は、無機半導体材料から、または量子ドットもしくは量子ロッドから選ばれる少なくとも一つのさらなる成分を含み、また、調合物は、第1のマトリックス材料と第2のマトリックス材料とを含み、ここで、第1のマトリックス材料は電子輸送マトリックス材料であるか、または正孔輸送マトリックス材料の何れかであり、第2の電子輸送マトリックス材料は3.5eV以上のHOMOとLUMO間のバンドギャップを有することを特徴とする調合物。
- TADF化合物のS1とT1との間の離隔が、0.10eV以下、好ましくは、0.08eV以下、特に好ましくは、0.05eV以下であることを特徴とする、請求項1記載の調合物。
- TADF化合物が、ドナーおよびアクセプター置換基の両方を有する芳香族化合物であることを特徴とする、請求項1または2記載の調合物。
- 溶媒もしくは複数の溶媒の表面張力が、少なくとも28mN/m、好ましくは、少なくとも30mN/m、非常に好ましくは、少なくとも32mN/m、非常に特に好ましくは、少なくとも35mN/mであることを特徴とする、請求項1〜3何れか1項記載の調合物。
- 溶媒もしくは複数の溶媒の沸点もしくは昇華点が、300℃未満、好ましくは、260℃未満であることを特徴とする、請求項1〜4何れか1項記載の調合物:
- 溶媒もしくは溶媒混合物の個々の溶媒の粘度が、3mPa*s超、より好ましくは5mPa*s超であることを特徴とする、請求項1〜5何れか1項記載の調合物。
- 溶媒もしくは溶媒混合物中で使用される複数の溶媒の分子量が、1000g/mol以下、好ましくは、700g/mol以下、非常に好ましくは、500g/mol以下、特に好ましくは、300g/mol以下であることを特徴とする、請求項1〜6何れか1項記載の調合物。
- 全調合物に基づいて、調合物中のTADF化合物の濃度が、1〜20重量%の範囲、好ましくは、3〜15重量%の範囲、非常に好ましくは、5〜12重量%の範囲であることを特徴とする、請求項1〜7何れか1項記載の調合物。
- 溶媒は、トルエン、アニソール、o-、m-もしくはp-キシレン、メチルベンゾエート、メシチレン、テトラリン、ベラトール、THF、メチル-THF、THP、クロロベンゼン、ジオキサン、フェノキシトルエン、特に、3-フェノキシトルエン、(-)-フェンコヌ、1,2,3,5-テトラメチルベンゼン、1,2,4,5-テトラメチルベンゼン、1-メチルナフタレン、2-メチルベンゾチアゾール、2-フェノキシエタノール、2-ピロリジノン、3-メチルアニソール、4-メチルアニソール、3,4-ジメチルアニソール、3,5-ジメチルアニソール、アセトフェノン、α-テルピネオール、ベンゾチアゾール、ブチルベンゾエート、クメン、シクロヘキサノール、シクロヘキサノン、シクロヘキシルベンゼン、デカリン、ドデシルベンゼン、エチルベンゾエート、インダン、メチルベンゾエート、NMP、p-シメン、フェネトール、1,4-ジイソプロピルベンゼン、ジベンジルエーテル、ジエチレングリコールブチルメチルエステル、トリエチレングリコールブチルメチルエステル、ジエチレングリコールジブチルエステル、トリエチレングリコールジメチルエステル、ジエチレングリコールモノブチルエ−テル、トリプロピレングリコールジメチルエ−テル、テトラエチレングリコールジメチルエ−テル、2-イソプロピルナフタレン、ペンチルベンゼン、ヘキシルベンゼン、ヘプチルベンゼン、オクチルベンゼン、1,1-ビス(3,4-ジメチルフェニル)エタンもしくはこれら溶媒の混合物から選ばれることを特徴とする、請求項1〜8何れか1項記載の調合物。
- 調合物は、少なくとも一つの有機マトリックス材料を含み、ここで、有機マトリックス材料は、好ましくは、カルバゾール、インデノカルバゾール、インドロカルバゾール、トリアジン、ピリミジン、ラクタム、ケトン、ホスフィンオキシド、トリフェニレン、ジアリールフルオレン(特に、9,9'-ジアリールフルオレン、P08/044; WO2009/124627)またはジベンゾフランであることを特徴とする、請求項1〜9何れか1項記載の調合物。
- 調合物は、マトリックス材料を含み、ここで、TADF化合物の最低非占有分子軌道(LUMO):LUMO(TADF)およびマトリックスの最高占有子軌道(HOMO):HOMO(マトリックス)に対して、以下が適用されることを特徴とする、請求項1〜10何れか1項記載の調合物:
[LUMO(TADF)−HOMO(マトリックス)]は、[S1(TADF)−0.4eV]以上であり、
式中、S1(TADF)は、TADF化合物の第1励起一重項状態S1である。 - 溶液からの有機電子素子の一以上の層の製造のための、請求項1〜11何れか1項記載の調合物の使用。
- 電子素子の少なくとも一つの層が、請求項1〜11何れか1項記載の調合物により溶液から製造されることを特徴とする、有機電子素子の製造方法。
- 電子素子が、有機エレクトロルミッセンス素子、好ましくは、OLEDであることを特徴とする、請求項13記載の方法。
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KR20190018573A (ko) | 2019-02-22 |
US20170084844A1 (en) | 2017-03-23 |
KR102197166B1 (ko) | 2020-12-31 |
TWI681036B (zh) | 2020-01-01 |
EP3116973B1 (de) | 2019-06-19 |
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US10734587B2 (en) | 2020-08-04 |
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