JP6709271B2 - 蒸着装置及び有機電子デバイスの生産方法 - Google Patents

蒸着装置及び有機電子デバイスの生産方法 Download PDF

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Publication number
JP6709271B2
JP6709271B2 JP2018225361A JP2018225361A JP6709271B2 JP 6709271 B2 JP6709271 B2 JP 6709271B2 JP 2018225361 A JP2018225361 A JP 2018225361A JP 2018225361 A JP2018225361 A JP 2018225361A JP 6709271 B2 JP6709271 B2 JP 6709271B2
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Japan
Prior art keywords
vapor deposition
coil
container
power
power semiconductor
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JP2018225361A
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English (en)
Japanese (ja)
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JP2019173151A (ja
JP2019173151A5 (enExample
Inventor
慎一郎 小林
慎一郎 小林
弘 藤本
弘 藤本
宮崎　浩
浩 宮崎
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Fukuoka Industry Science and Technology Foundation
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Fukuoka Industry Science and Technology Foundation
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Publication date
Application filed by Fukuoka Industry Science and Technology Foundation filed Critical Fukuoka Industry Science and Technology Foundation
Priority to CN201980023277.7A priority Critical patent/CN111971411A/zh
Priority to KR1020227013143A priority patent/KR20220053700A/ko
Priority to US17/042,267 priority patent/US20210013457A1/en
Priority to EP19774731.4A priority patent/EP3822388A4/en
Priority to PCT/JP2019/007301 priority patent/WO2019187902A1/ja
Priority to KR1020207030373A priority patent/KR102391901B1/ko
Publication of JP2019173151A publication Critical patent/JP2019173151A/ja
Publication of JP2019173151A5 publication Critical patent/JP2019173151A5/ja
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Publication of JP6709271B2 publication Critical patent/JP6709271B2/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/04—Sources of current
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/06—Control, e.g. of temperature, of power
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
  • General Induction Heating (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Inverter Devices (AREA)
JP2018225361A 2018-03-28 2018-11-30 蒸着装置及び有機電子デバイスの生産方法 Active JP6709271B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020227013143A KR20220053700A (ko) 2018-03-28 2019-02-26 증착 장치 및 유기 전자 장치의 생산 방법
US17/042,267 US20210013457A1 (en) 2018-03-28 2019-02-26 Vapor deposition apparatus and organic electronic device production method
EP19774731.4A EP3822388A4 (en) 2018-03-28 2019-02-26 VAPORIZATION DEVICE AND METHOD OF MANUFACTURE OF ORGANIC ELECTRONIC DEVICE
PCT/JP2019/007301 WO2019187902A1 (ja) 2018-03-28 2019-02-26 蒸着装置及び有機電子デバイスの生産方法
CN201980023277.7A CN111971411A (zh) 2018-03-28 2019-02-26 蒸镀装置及有机电子器件的生产方法
KR1020207030373A KR102391901B1 (ko) 2018-03-28 2019-02-26 증착 장치 및 유기 전자 장치의 생산 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018063368 2018-03-28
JP2018063368 2018-03-28

Publications (3)

Publication Number Publication Date
JP2019173151A JP2019173151A (ja) 2019-10-10
JP2019173151A5 JP2019173151A5 (enExample) 2020-04-02
JP6709271B2 true JP6709271B2 (ja) 2020-06-10

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JP2018225361A Active JP6709271B2 (ja) 2018-03-28 2018-11-30 蒸着装置及び有機電子デバイスの生産方法
JP2018225362A Active JP6709272B2 (ja) 2018-03-28 2018-11-30 蒸着装置及び有機電子デバイスの生産方法
JP2018225364A Active JP6709273B2 (ja) 2018-03-28 2018-11-30 蒸着装置
JP2018225363A Active JP6734909B2 (ja) 2018-03-28 2018-11-30 蒸着装置及び有機電子デバイスの生産方法

Family Applications After (3)

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JP2018225362A Active JP6709272B2 (ja) 2018-03-28 2018-11-30 蒸着装置及び有機電子デバイスの生産方法
JP2018225364A Active JP6709273B2 (ja) 2018-03-28 2018-11-30 蒸着装置
JP2018225363A Active JP6734909B2 (ja) 2018-03-28 2018-11-30 蒸着装置及び有機電子デバイスの生産方法

Country Status (3)

Country Link
US (1) US20210013457A1 (enExample)
JP (4) JP6709271B2 (enExample)
CN (1) CN111971411A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021112019A1 (enExample) * 2019-12-02 2021-06-10
JP2024022701A (ja) * 2020-12-24 2024-02-21 公益財団法人福岡県産業・科学技術振興財団 誘導加熱装置、真空蒸着装置、局所加熱装置、局所計測装置、誘導加熱方法及び局所計測方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3570083B2 (ja) * 1996-05-27 2004-09-29 富士電機システムズ株式会社 底穴出湯式浮揚溶解装置
KR20030038689A (ko) * 2000-08-10 2003-05-16 신닛테츠가가쿠 가부시키가이샤 유기 ｅｌ 소자의 제조방법 및 장치
JP2005307354A (ja) * 2000-08-10 2005-11-04 Nippon Steel Chem Co Ltd 有機ｅｌ素子の製造方法及び装置
JP3932830B2 (ja) * 2001-05-21 2007-06-20 富士ゼロックス株式会社 電磁誘導加熱用制御装置、電磁誘導加熱装置および画像形成装置
GB0213186D0 (en) * 2002-06-08 2002-07-17 Univ Dundee Methods
JP2004059992A (ja) * 2002-07-29 2004-02-26 Sony Corp 有機薄膜形成装置
JP4558375B2 (ja) * 2004-05-17 2010-10-06 株式会社アルバック 有機材料用蒸発源及び有機蒸着装置
JP4476019B2 (ja) * 2004-05-20 2010-06-09 東北パイオニア株式会社 成膜源、真空成膜装置、有機ｅｌ素子の製造方法
JP4001296B2 (ja) * 2005-08-25 2007-10-31 トッキ株式会社 有機材料の真空蒸着方法およびその装置
WO2007057925A1 (en) * 2005-11-15 2007-05-24 Galileo Vacuum Systems S.P.A. Device and method for controlling the power supplied to vacuum vaporization sources of metals and other
CN101658066B (zh) * 2007-04-07 2012-09-05 应达公司 用于电感应加热、熔化和搅拌的具有脉冲调节器的电流反馈逆变器
TWI352494B (en) * 2007-04-07 2011-11-11 Inductotherm Corp Current fed inverter with pulse regulator for elec
CN201144277Y (zh) * 2007-12-29 2008-11-05 杭州晶鑫镀膜包装有限公司 一种真空镀铝膜设备
US20130106374A1 (en) * 2011-11-02 2013-05-02 Alan R. Ball Power supply controller and method therefor
JP2013182966A (ja) * 2012-03-01 2013-09-12 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
ZA201305605B (en) * 2012-07-26 2014-05-28 Oss Man Services (Pty) Ltd Reactor vessel,system and method for removing and recovering volatilizing contaminants from contaminated materials
JP6070846B2 (ja) * 2013-07-31 2017-02-01 富士電機株式会社 半導体装置の製造方法および半導体装置
DE102014112456B4 (de) * 2014-08-29 2020-09-24 Schott Ag Vorrichtung und Verfahren zur Beheizung einer Schmelze

Also Published As

Publication number Publication date
JP2019173151A (ja) 2019-10-10
JP2019173153A (ja) 2019-10-10
US20210013457A1 (en) 2021-01-14
CN111971411A (zh) 2020-11-20
JP6709272B2 (ja) 2020-06-10
JP2019173152A (ja) 2019-10-10
JP6709273B2 (ja) 2020-06-10
JP6734909B2 (ja) 2020-08-05
JP2019173154A (ja) 2019-10-10

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