JP6707291B2 - ウェーハの加工方法 - Google Patents

ウェーハの加工方法 Download PDF

Info

Publication number
JP6707291B2
JP6707291B2 JP2016203068A JP2016203068A JP6707291B2 JP 6707291 B2 JP6707291 B2 JP 6707291B2 JP 2016203068 A JP2016203068 A JP 2016203068A JP 2016203068 A JP2016203068 A JP 2016203068A JP 6707291 B2 JP6707291 B2 JP 6707291B2
Authority
JP
Japan
Prior art keywords
wafer
unit
back surface
processing
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016203068A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018064076A (ja
Inventor
裕輔 大山
裕輔 大山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2016203068A priority Critical patent/JP6707291B2/ja
Priority to TW106131123A priority patent/TWI737810B/zh
Priority to KR1020170130077A priority patent/KR102325715B1/ko
Priority to CN201710951990.0A priority patent/CN107958841B/zh
Publication of JP2018064076A publication Critical patent/JP2018064076A/ja
Application granted granted Critical
Publication of JP6707291B2 publication Critical patent/JP6707291B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
JP2016203068A 2016-10-14 2016-10-14 ウェーハの加工方法 Active JP6707291B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016203068A JP6707291B2 (ja) 2016-10-14 2016-10-14 ウェーハの加工方法
TW106131123A TWI737810B (zh) 2016-10-14 2017-09-12 晶圓之加工方法
KR1020170130077A KR102325715B1 (ko) 2016-10-14 2017-10-11 웨이퍼의 가공 방법
CN201710951990.0A CN107958841B (zh) 2016-10-14 2017-10-13 晶片的加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016203068A JP6707291B2 (ja) 2016-10-14 2016-10-14 ウェーハの加工方法

Publications (2)

Publication Number Publication Date
JP2018064076A JP2018064076A (ja) 2018-04-19
JP6707291B2 true JP6707291B2 (ja) 2020-06-10

Family

ID=61954624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016203068A Active JP6707291B2 (ja) 2016-10-14 2016-10-14 ウェーハの加工方法

Country Status (4)

Country Link
JP (1) JP6707291B2 (ko)
KR (1) KR102325715B1 (ko)
CN (1) CN107958841B (ko)
TW (1) TWI737810B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI805823B (zh) * 2018-10-31 2023-06-21 日商三星鑽石工業股份有限公司 基板供給系統及基板加工裝置
JP7325913B2 (ja) * 2019-11-22 2023-08-15 株式会社ディスコ ウェーハ加工装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3792954B2 (ja) 1999-08-10 2006-07-05 株式会社東芝 半導体装置の製造方法
JP3844973B2 (ja) * 2001-03-16 2006-11-15 大日本スクリーン製造株式会社 基板の研磨終点検出
JP3895987B2 (ja) * 2001-12-27 2007-03-22 株式会社東芝 半導体装置およびその製造方法
JP4340517B2 (ja) 2003-10-30 2009-10-07 Ｏｋｉセミコンダクタ株式会社 半導体装置及びその製造方法
JP2008071839A (ja) * 2006-09-12 2008-03-27 Canon Inc 表面位置検出方法、露光装置及びデバイスの製造方法
JP2011125987A (ja) * 2009-12-21 2011-06-30 Disco Abrasive Syst Ltd 研削装置
JP5170294B2 (ja) * 2010-12-24 2013-03-27 三星ダイヤモンド工業株式会社 パターニング装置
JP2012164801A (ja) * 2011-02-07 2012-08-30 Lasertec Corp 検査装置及び検査方法
US9960088B2 (en) * 2011-11-07 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. End point detection in grinding
JP5770677B2 (ja) * 2012-05-08 2015-08-26 株式会社ディスコ ウェーハの加工方法
JP2014053354A (ja) * 2012-09-05 2014-03-20 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2014053353A (ja) * 2012-09-05 2014-03-20 Disco Abrasive Syst Ltd ウエーハの加工方法
US9543225B2 (en) * 2014-04-29 2017-01-10 Lam Research Corporation Systems and methods for detecting endpoint for through-silicon via reveal applications
JP6385131B2 (ja) * 2014-05-13 2018-09-05 株式会社ディスコ ウェーハの加工方法
JP6366383B2 (ja) * 2014-06-27 2018-08-01 株式会社ディスコ 加工装置
JP6377459B2 (ja) * 2014-08-29 2018-08-22 株式会社ディスコ ウエーハ検査方法、研削研磨装置
JP2016064459A (ja) * 2014-09-24 2016-04-28 株式会社ディスコ 被加工物の研削方法

Also Published As

Publication number Publication date
TW201816872A (zh) 2018-05-01
JP2018064076A (ja) 2018-04-19
CN107958841B (zh) 2023-04-18
KR102325715B1 (ko) 2021-11-11
KR20180041585A (ko) 2018-04-24
TWI737810B (zh) 2021-09-01
CN107958841A (zh) 2018-04-24

Similar Documents

Publication Publication Date Title
JP6906859B2 (ja) 加工装置
TWI483302B (zh) Wafer grinding method
JP2009004406A (ja) 基板の加工方法
JP2004207606A (ja) ウェーハサポートプレート
JP2007305835A (ja) ウエーハの加工方法
JP6723892B2 (ja) ウエーハの加工方法
JP2019220632A (ja) 被加工物の加工方法
JP6707291B2 (ja) ウェーハの加工方法
JP2011040511A (ja) ウエーハの研削方法
TW201310517A (zh) 晶圓之加工方法
JP2021174896A (ja) 加工方法及び保持テーブル
JP4861061B2 (ja) ウエーハの外周部に形成される環状補強部の確認方法および確認装置
JP5554601B2 (ja) 研削装置
JP2010147134A (ja) 位置合わせ機構、研削装置、位置合わせ方法および研削方法
JP2014038929A (ja) インラインシステム
JP6817761B2 (ja) ウエーハの分割方法
JP7071818B2 (ja) 基板処理システム
JP5295720B2 (ja) 半導体ウエーハ加工装置
JP7025249B2 (ja) 被加工物の研削方法。
JP2012064735A (ja) ウエーハの研削方法
JP5508114B2 (ja) 研削装置
JP2014042959A (ja) 研削装置
JP5975839B2 (ja) 研削装置
JP5973284B2 (ja) 研削装置
JP2019111634A (ja) 被加工物の研削方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190814

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200423

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200519

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200519

R150 Certificate of patent or registration of utility model

Ref document number: 6707291

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250