CN107958841B - 晶片的加工方法 - Google Patents

晶片的加工方法 Download PDF

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Publication number
CN107958841B
CN107958841B CN201710951990.0A CN201710951990A CN107958841B CN 107958841 B CN107958841 B CN 107958841B CN 201710951990 A CN201710951990 A CN 201710951990A CN 107958841 B CN107958841 B CN 107958841B
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China
Prior art keywords
wafer
unit
processing
back surface
grinding
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Active
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CN201710951990.0A
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English (en)
Chinese (zh)
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CN107958841A (zh
Inventor
大山裕辅
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Disco Corp
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Disco Corp
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Publication of CN107958841A publication Critical patent/CN107958841A/zh
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Publication of CN107958841B publication Critical patent/CN107958841B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
CN201710951990.0A 2016-10-14 2017-10-13 晶片的加工方法 Active CN107958841B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016203068A JP6707291B2 (ja) 2016-10-14 2016-10-14 ウェーハの加工方法
JP2016-203068 2016-10-14

Publications (2)

Publication Number Publication Date
CN107958841A CN107958841A (zh) 2018-04-24
CN107958841B true CN107958841B (zh) 2023-04-18

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ID=61954624

Family Applications (1)

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CN201710951990.0A Active CN107958841B (zh) 2016-10-14 2017-10-13 晶片的加工方法

Country Status (4)

Country Link
JP (1) JP6707291B2 (ko)
KR (1) KR102325715B1 (ko)
CN (1) CN107958841B (ko)
TW (1) TWI737810B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI805823B (zh) * 2018-10-31 2023-06-21 日商三星鑽石工業股份有限公司 基板供給系統及基板加工裝置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002273653A (ja) * 2001-03-16 2002-09-25 Dainippon Screen Mfg Co Ltd 基板の研磨終点検出
JP2003197855A (ja) * 2001-12-27 2003-07-11 Toshiba Corp 半導体装置およびその製造方法
JP2011125987A (ja) * 2009-12-21 2011-06-30 Disco Abrasive Syst Ltd 研削装置
EP2469586A1 (en) * 2010-12-24 2012-06-27 Mitsuboshi Diamond Industrial Co., Ltd. Patterning device
JP2014053354A (ja) * 2012-09-05 2014-03-20 Disco Abrasive Syst Ltd ウエーハの加工方法
TW201606896A (zh) * 2014-04-29 2016-02-16 蘭姆研究公司 用於直通矽晶穿孔露出應用的端點偵測系統及方法
KR20160026691A (ko) * 2014-08-29 2016-03-09 가부시기가이샤 디스코 웨이퍼 검사 방법 및 연삭 연마 장치
JP2016064459A (ja) * 2014-09-24 2016-04-28 株式会社ディスコ 被加工物の研削方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3792954B2 (ja) 1999-08-10 2006-07-05 株式会社東芝 半導体装置の製造方法
JP4340517B2 (ja) 2003-10-30 2009-10-07 Ｏｋｉセミコンダクタ株式会社 半導体装置及びその製造方法
JP2008071839A (ja) * 2006-09-12 2008-03-27 Canon Inc 表面位置検出方法、露光装置及びデバイスの製造方法
JP2012164801A (ja) 2011-02-07 2012-08-30 Lasertec Corp 検査装置及び検査方法
US9960088B2 (en) * 2011-11-07 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. End point detection in grinding
JP5770677B2 (ja) * 2012-05-08 2015-08-26 株式会社ディスコ ウェーハの加工方法
JP2014053353A (ja) 2012-09-05 2014-03-20 Disco Abrasive Syst Ltd ウエーハの加工方法
JP6385131B2 (ja) * 2014-05-13 2018-09-05 株式会社ディスコ ウェーハの加工方法
JP6366383B2 (ja) * 2014-06-27 2018-08-01 株式会社ディスコ 加工装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002273653A (ja) * 2001-03-16 2002-09-25 Dainippon Screen Mfg Co Ltd 基板の研磨終点検出
JP2003197855A (ja) * 2001-12-27 2003-07-11 Toshiba Corp 半導体装置およびその製造方法
JP2011125987A (ja) * 2009-12-21 2011-06-30 Disco Abrasive Syst Ltd 研削装置
EP2469586A1 (en) * 2010-12-24 2012-06-27 Mitsuboshi Diamond Industrial Co., Ltd. Patterning device
JP2014053354A (ja) * 2012-09-05 2014-03-20 Disco Abrasive Syst Ltd ウエーハの加工方法
TW201606896A (zh) * 2014-04-29 2016-02-16 蘭姆研究公司 用於直通矽晶穿孔露出應用的端點偵測系統及方法
KR20160026691A (ko) * 2014-08-29 2016-03-09 가부시기가이샤 디스코 웨이퍼 검사 방법 및 연삭 연마 장치
JP2016064459A (ja) * 2014-09-24 2016-04-28 株式会社ディスコ 被加工物の研削方法

Also Published As

Publication number Publication date
TW201816872A (zh) 2018-05-01
KR20180041585A (ko) 2018-04-24
KR102325715B1 (ko) 2021-11-11
CN107958841A (zh) 2018-04-24
JP6707291B2 (ja) 2020-06-10
JP2018064076A (ja) 2018-04-19
TWI737810B (zh) 2021-09-01

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