JP6705726B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6705726B2
JP6705726B2 JP2016179331A JP2016179331A JP6705726B2 JP 6705726 B2 JP6705726 B2 JP 6705726B2 JP 2016179331 A JP2016179331 A JP 2016179331A JP 2016179331 A JP2016179331 A JP 2016179331A JP 6705726 B2 JP6705726 B2 JP 6705726B2
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Japan
Prior art keywords
region
semiconductor
semiconductor device
semiconductor region
epitaxial layer
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JP2016179331A
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English (en)
Japanese (ja)
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JP2018046136A (ja
JP2018046136A5 (enExample
Inventor
栄介 児玉
栄介 児玉
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Renesas Electronics Corp
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Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2016179331A priority Critical patent/JP6705726B2/ja
Priority to US15/635,441 priority patent/US10229903B2/en
Priority to CN201710784798.7A priority patent/CN107818976B/zh
Publication of JP2018046136A publication Critical patent/JP2018046136A/ja
Publication of JP2018046136A5 publication Critical patent/JP2018046136A5/ja
Application granted granted Critical
Publication of JP6705726B2 publication Critical patent/JP6705726B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/619—Combinations of lateral BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP2016179331A 2016-09-14 2016-09-14 半導体装置 Active JP6705726B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016179331A JP6705726B2 (ja) 2016-09-14 2016-09-14 半導体装置
US15/635,441 US10229903B2 (en) 2016-09-14 2017-06-28 Semiconductor device with a resistance element and an electrostatic protection element
CN201710784798.7A CN107818976B (zh) 2016-09-14 2017-09-04 半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016179331A JP6705726B2 (ja) 2016-09-14 2016-09-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2018046136A JP2018046136A (ja) 2018-03-22
JP2018046136A5 JP2018046136A5 (enExample) 2019-04-04
JP6705726B2 true JP6705726B2 (ja) 2020-06-03

Family

ID=61560784

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016179331A Active JP6705726B2 (ja) 2016-09-14 2016-09-14 半導体装置

Country Status (3)

Country Link
US (1) US10229903B2 (enExample)
JP (1) JP6705726B2 (enExample)
CN (1) CN107818976B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109887912B (zh) * 2019-03-06 2021-07-13 西安微电子技术研究所 一种面向冷备份系统双极型集成电路应用的静电保护电路
JP7086018B2 (ja) 2019-03-12 2022-06-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN114551438A (zh) * 2022-02-24 2022-05-27 武汉华星光电半导体显示技术有限公司 显示面板

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0109996B1 (fr) * 1982-11-26 1987-06-03 International Business Machines Corporation Structure de résistance autopolarisée et application à la réalisation de circuits d'interface
GB2204445B (en) * 1987-03-06 1991-04-24 Texas Instruments Ltd Semiconductor switch
EP0429686B1 (de) * 1989-10-30 1994-12-28 Siemens Aktiengesellschaft Eingangsschutzstruktur für integrierte Schaltungen
US5521783A (en) * 1993-09-17 1996-05-28 Analog Devices, Inc. Electrostatic discharge protection circuit
JPH07211510A (ja) * 1994-01-27 1995-08-11 Nippondenso Co Ltd 半導体装置
JPH1079472A (ja) * 1996-09-05 1998-03-24 Mitsubishi Electric Corp 半導体集積回路
JP4065104B2 (ja) * 2000-12-25 2008-03-19 三洋電機株式会社 半導体集積回路装置およびその製造方法
JP4067346B2 (ja) * 2002-06-25 2008-03-26 三洋電機株式会社 半導体集積回路装置
JP3760945B2 (ja) * 2004-04-01 2006-03-29 セイコーエプソン株式会社 半導体装置及びその製造方法
US20070173026A1 (en) * 2006-01-23 2007-07-26 Bcd Semiconductor Manufacturing Limited Method for fabricating bipolar integrated circuits
JP2007317869A (ja) * 2006-05-25 2007-12-06 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4209432B2 (ja) * 2006-06-12 2009-01-14 Ｎｅｃエレクトロニクス株式会社 静電破壊保護装置
JP5203850B2 (ja) * 2008-08-22 2013-06-05 パナソニック株式会社 静電気保護素子
JP2013073993A (ja) * 2011-09-27 2013-04-22 Semiconductor Components Industries Llc 半導体装置
JP5749616B2 (ja) * 2011-09-27 2015-07-15 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置

Also Published As

Publication number Publication date
JP2018046136A (ja) 2018-03-22
US20180076191A1 (en) 2018-03-15
CN107818976A (zh) 2018-03-20
US10229903B2 (en) 2019-03-12
CN107818976B (zh) 2024-02-09

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