JP6701335B2 - 燐光有機電界発光素子 - Google Patents
燐光有機電界発光素子 Download PDFInfo
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- JP6701335B2 JP6701335B2 JP2018526171A JP2018526171A JP6701335B2 JP 6701335 B2 JP6701335 B2 JP 6701335B2 JP 2018526171 A JP2018526171 A JP 2018526171A JP 2018526171 A JP2018526171 A JP 2018526171A JP 6701335 B2 JP6701335 B2 JP 6701335B2
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- CECAIMUJVYQLKA-UHFFFAOYSA-N iridium 1-phenylisoquinoline Chemical compound [Ir].C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 CECAIMUJVYQLKA-UHFFFAOYSA-N 0.000 description 1
- YERGTYJYQCLVDM-UHFFFAOYSA-N iridium(3+);2-(4-methylphenyl)pyridine Chemical compound [Ir+3].C1=CC(C)=CC=C1C1=CC=CC=N1.C1=CC(C)=CC=C1C1=CC=CC=N1.C1=CC(C)=CC=C1C1=CC=CC=N1 YERGTYJYQCLVDM-UHFFFAOYSA-N 0.000 description 1
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- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
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- 150000003384 small molecules Chemical class 0.000 description 1
- 229940006186 sodium polystyrene sulfonate Drugs 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Description
前記正孔輸送材料層は、ホスト材料を含み、前記ホスト材料は、正孔輸送特性を備え、
前記電子輸送材料層は、ホスト材料及びホスト材料にドープされた燐光材料を含み、前記ホスト材料は、電子輸送特性を備え、
ただし、正孔輸送特性を備える材料の第1の三重項準位は、前記エキシマの第1の一重項準位よりも高く、エネルギー差は、0.2eV以上であり、且つ、正孔輸送特性を備える材料のHOMO準位の絶対値は、5.3eV以下であり、
電子輸送特性を備える材料の第1の三重項準位は、前記エキシマの第1の一重項準位よりも高く、エネルギー差は、0.2eVよりも大きく、且つ、電子輸送特性を備える材料のLUMO準位の絶対値は、2.0eVよりも大きく、正孔輸送特性を備える材料と電子輸送特性を備える材料とのLUMO準位の差は、0.3eVよりも大きく、HOMO準位の差は、0.2eVよりも大きく、
エキシマの第1の一重項準位は、燐光材料の第1の三重項準位よりも高い。
T1A−S1>0.2eV
T1D−S1≧0.2eV
│LUMOA│>2.0eV
│HOMOD│≦5.3eV
電子輸送特性を備える材料の第1の三重項準位は、前記エキシマの第1の一重項準位よりも高く、エネルギー差は、0.2eVよりも大きく、且つ、電子輸送特性を備える材料のLUMO準位の絶対値は、2.0eVよりも大きく、
また、正孔輸送特性を備える材料と電子輸送特性を備える材料とのLUMO準位の差は、0.3eVよりも大きく、好ましくは、約0.4eVであり、
正孔輸送特性を備える材料と電子輸送特性を備える材料とのHOMO準位の差は、0.2eVよりも大きく、
エキシマの第1の一重項準位は、燐光色素の第1の三重項準位よりも高い。
構造式(1−1)、
構造式(1−2)、
構造式(1−3)、
構造式(1−4)、
構造式(1−5)(TmPyPb)、
構造式(1−6)(TPBi)、
構造式(1−7)(PPT)、
構造式(1−8)(CzTrz)
構造式(2−1)(NPB)、
構造式(2−2)(TPD)、
構造式(2−3)(TAPC)、
構造式(2−4)(CBP)、
構造式(2−5)(TCTA)、
構造式(2−6)(mCP)、
構造式(2−7)(m−MTDATA)
Ir(piq)3、
Ir(piq)2(acac)、
Ir(piq−F)2(acac)、
Ir(m−piq)2(acac)、
Ir(DBQ)2(acac)、
Ir(MDQ)2(acac)、
Ir(bt)2(acac)、
Ir(bt)3
本実施例では、発光層04の正孔輸送材料層05と電子輸送材料層06の厚さが異なる発光素子を製造し、これらの素子は、図1に示す構造を有する。発光層04の正孔輸送材料層05は、ホスト材料化合物(2−5)のTCTAからなり、電子輸送材料層06は、ホスト材料化合物(1−8)のCzTrzと燐光色素PO−01とからなる。供与体のホスト化合物(2−5)TCTAと受容体のホスト化合物(1−8)CzTrzとのLUMO準位の差は0.3eVよりも大きく、HOMO準位の差は0.2eVよりも大きい。エキシマの第1の一重項準位は、燐光色素の第1の三重項準位よりも高い。燐光色素PO−01が発光層04に占める比率は、3wt%である。
実施例1と同様の方法で有機電界発光素子を製造し、当該素子の構造は、ITO(150nm)/NPB(40nm)/CBP+3wt%PO−01(40nm)/Bphen(20nm)/LiF(0.5nm)/Al(150nm)である。
実施例1と同様の方法で有機電界発光素子を製造し、当該素子の構造は、ITO(150nm)/NPB(40nm)/エキシマ(TCTA及びCzTrz、両者の質量比率は1:1)+3wt%PO−01(40nm)/Alq3(20nm)/LiF(0.5nm)/Al(150nm)である。
本実施例の素子の構造は、ITO(150nm)/NPB(40nm)/TCTA(10nm)/CzTrz+1〜10wt%燐光色素PO−01(30nm)/Bphen(20nm)/LiF(0.5nm)/Al(150nm)である。
本実施例では、本発明におけるホスト材料が、有機電界発光素子の特性に与える影響を測定するために、実施例1と同様の方法で有機電界発光素子を製造し、当該発光素子の構造は、ITO(150nm)/NPB(40nm)/正孔輸送材料層(正孔輸送特性を備える材料)(10nm)/電子輸送材料層(電子輸送特性を備える材料+3wt%燐光色素)(30nm)/Bphen(20nm)/LiF(0.5nm)/Al(150nm)である。
Claims (7)
- 順に積層された正孔輸送層と、発光層と、電子輸送層とを含む燐光有機電界発光素子であって、
前記発光層は、正孔輸送材料層と電子輸送材料層を含み、前記正孔輸送材料層が前記正孔輸送層と前記電子輸送材料層の間に設けられ、前記電子輸送材料層が前記正孔輸送材料層と前記電子輸送層の間に設けられ、前記正孔輸送材料層と前記電子輸送材料層とが接触した界面にエキシマが生成され、
前記正孔輸送材料層が、ホスト材料を含み、前記ホスト材料が、正孔輸送特性を備え、
前記電子輸送材料層が、ホスト材料及びホスト材料にドープされた燐光材料を含み、前記ホスト材料が、電子輸送特性を備え、
ただし、正孔輸送特性を備える材料の第1の三重項準位は、前記エキシマの第1の一重項準位よりも高く、エネルギー差は、0.2eV以上であり、且つ、正孔輸送特性を備える材料のHOMO準位の絶対値は、5.3eV以下であり、
電子輸送特性を備える材料の第1の三重項準位は、前記エキシマの第1の一重項準位よりも高く、エネルギー差は、0.2eVよりも大きく、且つ、電子輸送特性を備える材料のLUMO準位の絶対値は、2.0eVよりも大きく、正孔輸送特性を備える材料と電子輸送特性を備える材料とのLUMO準位の差が、0.3eVよりも大きく、正孔輸送特性を備える材料と電子輸送特性を備える材料とのHOMO準位の差が、0.2eVよりも大きく、
前記電子輸送特性を備える材料は、下記の構造式(1−1)、(1−4)、(1−8)に示す構造を有する化合物
構造式(1−4)、
構造式(1−8)
のうちの1種又は複数種であり、
前記正孔輸送特性を備える材料は、下記の構造式(2−1)〜(2−3)、(2−7)に示す構造を有する化合物
構造式(2−2) 、
構造式(2−3)、
構造式(2−7)
のうちの1種又は複数種であり、
エキシマの第1の一重項準位は、燐光材料の第1の三重項準位よりも高く、
前記電子輸送材料層のホスト材料にドープされた燐光色素が発光層に占める比率は、1wt%〜10wt%である
ことを特徴とする燐光有機電界発光素子。 - 前記正孔輸送特性を備える材料と電子輸送特性を備える材料とのLUMO準位の差は、0.4eV以上である
請求項1に記載の燐光有機電界発光素子。 - 前記電子輸送材料層のホスト材料にドープされた燐光色素が発光層に占める比率は、3wt%である
請求項1に記載の燐光有機電界発光素子。 - 前記正孔輸送材料層と前記電子輸送材料層の厚さの比は、1:1〜1:5である
請求項1に記載の燐光有機電界発光素子。 - 前記正孔輸送材料層と前記電子輸送材料層の厚さの比は、1:3である
請求項1に記載の燐光有機電界発光素子。 - 基板に順に積層された陽極と、正孔輸送層と、正孔輸送材料層と、電子輸送材料層と、電子輸送層、陰極とを含む
請求項1に記載の燐光有機電界発光素子。 - 前記陽極と前記正孔輸送層の間に正孔注入層がさらに設けられる
請求項6に記載の燐光有機電界発光素子。
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