JP6692439B2 - アモルファス金属薄膜非線形抵抗 - Google Patents
アモルファス金属薄膜非線形抵抗 Download PDFInfo
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- JP6692439B2 JP6692439B2 JP2018539228A JP2018539228A JP6692439B2 JP 6692439 B2 JP6692439 B2 JP 6692439B2 JP 2018539228 A JP2018539228 A JP 2018539228A JP 2018539228 A JP2018539228 A JP 2018539228A JP 6692439 B2 JP6692439 B2 JP 6692439B2
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- 239000005300 metallic glass Substances 0.000 title claims description 219
- 239000010409 thin film Substances 0.000 title claims description 207
- 239000012212 insulator Substances 0.000 claims description 101
- 239000000758 substrate Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 38
- 239000011521 glass Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 239000003990 capacitor Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 238000003860 storage Methods 0.000 claims description 13
- 239000010408 film Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
- 206010026749 Mania Diseases 0.000 claims 1
- 238000000059 patterning Methods 0.000 description 12
- 238000000151 deposition Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 208000023564 acute macular neuroretinopathy Diseases 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000010791 quenching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical group [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Description
前記第1、第2、および第3のアモルファス金属薄膜相互接続部が第1のグループであり、前記第4、第5、および第6のアモルファス金属薄膜相互接続部が第2のグループであり、前記第1および第2の電極が、第1のグループと第2のグループの間にある、デバイス。
Claims (34)
- 基板と、
第1の端部および第2の端部を有する該基板上の第1のアモルファス金属薄膜相互接続部と、
第1の端部および第2の端部を有する第2のアモルファス金属薄膜相互接続部であって、該第2のアモルファス金属薄膜相互接続部の該第1の端部が、前記第1のアモルファス金属薄膜相互接続部の前記第1の端部の上方にありトンネル絶縁体を介して重っている、第2のアモルファス金属薄膜相互接続部と、
第1の端部および第2の端部を有する第3のアモルファス金属薄膜相互接続部であって、該第3のアモルファス金属薄膜相互接続部の該第1の端部が、前記第2のアモルファス金属薄膜相互接続部の前記第2の端部の上方にありトンネル絶縁体を介して重っている、第3のアモルファス金属薄膜相互接続部と
を備えてなるデバイス。 - 前記第1のアモルファス金属薄膜相互接続部の前記第2の端部が第1の端子であり、
前記第3のアモルファス金属薄膜相互接続部の前記第2の端部が第2の端子である、
請求項1に記載のデバイス。 - 第1の端部および第2の端部を有する前記基板上の第4のアモルファス金属薄膜相互接続部と、
第1の端部および第2の端部を有する第5のアモルファス金属薄膜相互接続部であって、該第5のアモルファス金属薄膜相互接続部の該第1の端部が、前記第4のアモルファス金属薄膜相互接続部の前記第1の端部の上方にあり重なっている、第5のアモルファス金属薄膜相互接続部と、
第1の端部および第2の端部を有する第6のアモルファス金属薄膜相互接続部であって、該第6のアモルファス金属薄膜相互接続部の該第1の端部が、前記第3のアモルファス金属薄膜相互接続部の前記第2の端部の上方にあり重なっている、第6のアモルファス金属薄膜相互接続部と
をさらに備える
請求項2に記載のデバイス。 - 第1の電極および第2の電極をさらに備え、
前記第1、第2、および第3のアモルファス金属薄膜相互接続部が第1のグループであり、
前記第4、第5、および第6のアモルファス金属薄膜相互接続部が第2のグループであり、
前記第1および第2の電極が、第1のグループと第2のグループとの間にある、
請求項3に記載のデバイス。 - 前記第4のアモルファス金属薄膜相互接続部の前記第2の端部が第3の端子であり、
前記第6のアモルファス金属薄膜相互接続部の前記第2の端部が第4の端子である、
請求項3に記載のデバイス。 - 第1の電極および第2の電極ならびに第1および第2のデータ線
をさらに備え、
該第1のデータ線が前記第1の端子に接続されており、
該第1の電極が前記第2の端子および前記第3の端子の間に接続されており、
該第2のデータ線が前記第4の端子に接続されているものである、
請求項5に記載のデバイス。 - 第1のガラス層と、
該第1のガラス層上の第1および第2のアモルファス金属薄膜デバイスと、
該第1のガラス層上の第1の電極であって、該第1のアモルファス金属薄膜デバイスと該第2のアモルファス金属薄膜デバイスとの間に接続されている第1の電極と、
第2の電極と、
該第2の電極がその上にある第2のガラス層と
を備えてなり、
前記第1および第2のアモルファス金属薄膜デバイスそれぞれが、
第1のアモルファス金属薄膜相互接続部と、
第2のアモルファス金属薄膜相互接続部と、
第3のアモルファス金属薄膜相互接続部と
を含んでおり、
前記第1、第2、および第3のアモルファス金属薄膜相互接続部が前記第1のガラス層上に形成され、
トンネル酸化物が前記第1、第2、および第3のアモルファス金属薄膜相互接続部上に形成されているものである、
システム。 - 前記第1の電極と前記第2の電極との間に配置された液晶層
をさらに備える
請求項7に記載のシステム。 - 前記第1および第2のアモルファス金属薄膜デバイスそれぞれが、
前記第1のアモルファス金属薄膜相互接続部と重なる信号線と、
前記第1のアモルファス金属薄膜相互接続部と重なり、前記第2のアモルファス金属薄膜相互接続部と重なる第1の導電性相互接続部と、
前記第2のアモルファス金属薄膜相互接続部および前記第3のアモルファス金属薄膜相互接続部と重なる第2の導電性相互接続部であって、前記第1の電極も前記第3のアモルファス金属薄膜相互接続部と重なる第2の導電性相互接続部と
を含むものである、
請求項7に記載のシステム。 - 前記第1および第2の導電性相互接続部がアモルファス金属薄膜である、
請求項9に記載のシステム。 - 前記第1のアモルファス金属薄膜デバイスの前記信号線および前記第2のアモルファス金属薄膜デバイスの前記信号線は、前記第1および第2のアモルファス金属薄膜デバイスによって前記第1および第2の電極から分離されるものである、
請求項9に記載のシステム。 - 前記第1のアモルファス金属薄膜デバイスの前記信号線および前記第2のアモルファス金属薄膜デバイスの前記信号線は、前記第1および前記第2のアモルファス金属薄膜デバイスならびに前記第1の電極および前記第2の電極によって互いから分離されているものである、
請求項9に記載のシステム。 - 基板と、
該基板上のアモルファス金属薄膜相互接続部と、
該アモルファス金属薄膜相互接続部上の第1のトンネル絶縁体と、
該第1のトンネル絶縁体上の第2の絶縁体と、
該第2の絶縁体を通る第1の導電性ビアと、
該第2の絶縁体上にあり、該第1の導電性ビアに接続されている導電性相互接続部と
を備えてなるデバイス。 - 前記第2の絶縁体がカラーフィルターである、
請求項13に記載のデバイス。 - 前記第2の絶縁体が有機カラーフィルター材料である、
請求項13に記載のデバイス。 - 前記第2の絶縁体が、有機非カラーフィルターバリアである、
請求項13に記載のデバイス。 - 前記第2の絶縁体が無機バリアである、
請求項13に記載のデバイス。 - フレキシブルな基板と、
該基板上の第1、第2、および第3のアモルファス金属薄膜相互接続部と、
該第1、第2、および第3のアモルファス金属薄膜相互接続部上に形成されているトンネル酸化物と、
該第1および第2のアモルファス金属薄膜相互接続部に重なる第1の導電性相互接続部であって、前記トンネル酸化物が該第1の導電性相互接続部と前記第1および第2のアモルファス金属薄膜相互接続部との間にある、第1の導電性相互接続部と、
該第2および第3のアモルファス金属薄膜相互接続部に重なる第2の導電性相互接続部であって、前記トンネル酸化物が該第2の導電性相互接続部と前記第2および第3のアモルファス金属薄膜相互接続部との間にある、第2の導電性相互接続部と、
該第1のアモルファス金属薄膜相互接続部と重なる第1の端子であって、前記トンネル酸化物が前記第1のアモルファス金属薄膜相互接続部と該第1の端子との間にある、第1の端子と、
該第3のアモルファス金属薄膜相互接続部に重なる第2の端子であって、前記トンネル酸化物が前記第3のアモルファス金属薄膜相互接続部と該第2の端子との間にあり、前記第1の導電性相互接続部と前記第2の導電性相互接続部とが、前記第1の端子と該第2の端子との間にある、第2の端子と
を備えてなるデバイス。 - 前記第1のアモルファス金属薄膜相互接続部と前記トンネル酸化物と前記第1の端子とで定まる第1の活性領域と、
前記第1のアモルファス金属薄膜相互接続部と前記トンネル酸化物と前記第1の導電性相互接続部とで定まる第2の活性領域と、
前記第2のアモルファス金属薄膜相互接続部と前記トンネル酸化物と前記第1の導電性相互接続部とで定まる第3の活性領域と、
前記第2のアモルファス金属薄膜相互接続部と前記トンネル酸化物と前記第2の導電性相互接続部とで定まる第4の活性領域と、
前記第3のアモルファス金属薄膜相互接続部と前記トンネル酸化物と前記第2の導電性相互接続部とで定まる第5の活性領域と、
前記第3のアモルファス金属薄膜相互接続部と前記トンネル酸化物と前記第2の端子とで定まる第6の活性領域と
をさらに備える
請求項18に記載のデバイス。 - 基板と、
該基板上の第1および第2の導電性相互接続部と、
該第1および第2の導電性相互接続部上のトンネル絶縁体と、
該トンネル絶縁体ならびに該第1および第2の導電性相互接続部上の第1のアモルファス金属薄膜相互接続部と
を備えてなり、
前記第1および第2の導電性相互接続部がアモルファス金属薄膜である、デバイス。 - 前記トンネル絶縁体上の第2および第3のアモルファス金属薄膜相互接続部であって、該第2のアモルファス金属薄膜相互接続部が前記第1の導電性相互接続部と重なっており、該第3のアモルファス金属薄膜相互接続部が前記第2の導電性相互接続部と重なっているものある、第2および第3のアモルファス金属薄膜相互接続部
をさらに備える
請求項20に記載のデバイス。 - 前記第1および第2の導電性相互接続部それぞれに繋がっている第1の端子および第2の端子
をさらに備える
請求項21に記載のデバイス。 - 前記第1の端子が前記第2のアモルファス金属薄膜相互接続部と重なり、前記第2の端子が前記第3のアモルファス金属薄膜相互接続部と重なるものである、
請求項22に記載のデバイス。 - 基板と、
少なくとも一の活性領域を有するアモルファス金属薄膜非線形抵抗器である第1のアモルファス金属薄膜デバイスと、
少なくとも一の活性領域を有するアモルファス金属薄膜非線形抵抗器である第2のアモルファス金属薄膜デバイスと、
前記基板上に形成され、前記第1および第2のアモルファス金属薄膜デバイスに接続されている第1電極と、
第1の電極と整列されている第2の電極と
を備えてなり、
前記第1および第2のアモルファス金属薄膜デバイスそれぞれが、第1のアモルファス金属薄膜相互接続部と、第1および第2の導電性相互接続部と、該第1のアモルファス金属薄膜相互接続部と該第1および第2の導電性相互接続部との間にあるトンネル絶縁体と、を含むものである、デバイス。 - 前記第2の電極および前記第1の電極が、前記基板上にあって前記第1および第2のアモルファス金属薄膜デバイスの上方に位置するものである、
請求項24に記載のデバイス。 - 前記第1電極および第2電極の上にガラス層をさらに含み、
該第2電極が該ガラス層上に形成されるものである、
請求項24に記載のデバイス。 - 前記第1および第2のアモルファス金属薄膜デバイスそれぞれが、第2のアモルファス金属薄膜相互接続部と、第3および第4の導電性相互接続部とをさらに含むものであり、前記トンネル絶縁体が、該第2のアモルファス金属薄膜相互接続部と該第3および第4の導電性相互接続部との間にある、
請求項24に記載のデバイス。 - 前記第1および第2の電極が、互いに向かって延びて容量的に相互作用するくし形フィンガーを含むものである、
請求項24に記載のデバイス。 - 基板上に第1のアモルファス金属薄膜相互接続部を形成する工程と、
該基板上に第1および第2の導電性相互接続部を形成する工程と、
該第1のアモルファス金属薄膜相互接続部と該第1の導電性相互接続部との間に第1の活性領域を形成する工程と、
該第1のアモルファス金属薄膜相互接続部と該第2の導電性相互接続部との間に第2の活性領域を形成する工程と
により、第1のアモルファス金属薄膜デバイスを形成する工程
を含んでおり、
前記第1のアモルファス金属薄膜相互接続部を形成する工程が、前記基板上に前記第1および第2の相互接続部を形成する工程より後に生じるものであり、
前記第1のアモルファス金属薄膜相互接続部と前記第1および第2の導電性相互接続部との間にトンネル絶縁体を形成する工程
をさらに含んでいる方法。 - 基板上に第2のアモルファス金属薄膜相互接続部を形成する工程と、
該基板上に第3および第4の導電性相互接続部を形成する工程と、
該第2のアモルファス金属薄膜相互接続部と該第3の導電性相互接続部との間に第3の活性領域を形成する工程と、
該第2のアモルファス金属薄膜相互接続部と該第4の導電性相互接続部との間に第4の活性領域を形成する工程と
により、第2のアモルファス金属薄膜デバイスを形成する工程
をさらに含む
請求項29に記載の方法。 - 第1および第2の電極を形成する工程と、
前記第1および第2のアモルファス金属薄膜デバイスの間に該第1の電極を接続する工程と
をさらに含む
請求項30に記載の方法。 - 蓄積コンデンサーを形成する工程をさらに含む、
請求項31に記載の方法。 - 基板上に第1のアモルファス金属薄膜相互接続部を形成する工程と、
該アモルファス金属薄膜相互接続部上に第1のトンネル絶縁体を形成する工程と、
該第1のトンネル絶縁体上に第2の絶縁体を形成する工程と、
該第2の絶縁体を通して第1の導電性ビアを形成する工程と、
第1の導電性相互接続部を、該第2の絶縁体上に形成し該第1の導電性ビアに接続する工程と
を含む方法。 - 第2のアモルファス金属薄膜相互接続部を前記基板上に形成する工程であって、前記第1の導電性相互接続部が前記第1および第2のアモルファス金属薄膜相互接続部の両方に重なるものである、工程と、
前記第2の絶縁体を通して第2の導電性ビアを形成する工程と、
該第2の導電性ビアを通じて前記第1の導電性相互接続部を前記第2のアモルファス金属薄膜相互接続部に接続する工程と
をさらに含む
請求項33に記載の方法。
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