JP6685126B2 - 半導体製造装置および半導体装置の製造方法 - Google Patents

半導体製造装置および半導体装置の製造方法 Download PDF

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Publication number
JP6685126B2
JP6685126B2 JP2015251207A JP2015251207A JP6685126B2 JP 6685126 B2 JP6685126 B2 JP 6685126B2 JP 2015251207 A JP2015251207 A JP 2015251207A JP 2015251207 A JP2015251207 A JP 2015251207A JP 6685126 B2 JP6685126 B2 JP 6685126B2
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Japan
Prior art keywords
die
wafer
unit
illumination
manufacturing apparatus
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JP2015251207A
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English (en)
Japanese (ja)
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JP2017117916A (ja
JP2017117916A5 (https=
Inventor
英晴 小橋
英晴 小橋
光央 依田
光央 依田
僚 大森
僚 大森
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Fasford Technology Co Ltd
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Fasford Technology Co Ltd
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Priority to JP2015251207A priority Critical patent/JP6685126B2/ja
Priority to TW105135961A priority patent/TWI624887B/zh
Priority to KR1020160153608A priority patent/KR20170076545A/ko
Priority to CN201611028994.3A priority patent/CN106920762B/zh
Publication of JP2017117916A publication Critical patent/JP2017117916A/ja
Publication of JP2017117916A5 publication Critical patent/JP2017117916A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/14—Beam splitting or combining systems operating by reflection only
    • G02B27/141—Beam splitting or combining systems operating by reflection only using dichroic mirrors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3206—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Die Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2015251207A 2015-12-24 2015-12-24 半導体製造装置および半導体装置の製造方法 Active JP6685126B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015251207A JP6685126B2 (ja) 2015-12-24 2015-12-24 半導体製造装置および半導体装置の製造方法
TW105135961A TWI624887B (zh) 2015-12-24 2016-11-04 半導體製造裝置及半導體裝置的製造方法
KR1020160153608A KR20170076545A (ko) 2015-12-24 2016-11-17 반도체 제조 장치 및 반도체 장치의 제조 방법
CN201611028994.3A CN106920762B (zh) 2015-12-24 2016-11-18 半导体制造装置、半导体器件的制造方法及芯片贴装机

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015251207A JP6685126B2 (ja) 2015-12-24 2015-12-24 半導体製造装置および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2017117916A JP2017117916A (ja) 2017-06-29
JP2017117916A5 JP2017117916A5 (https=) 2019-01-24
JP6685126B2 true JP6685126B2 (ja) 2020-04-22

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JP2015251207A Active JP6685126B2 (ja) 2015-12-24 2015-12-24 半導体製造装置および半導体装置の製造方法

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Country Link
JP (1) JP6685126B2 (https=)
KR (1) KR20170076545A (https=)
CN (1) CN106920762B (https=)
TW (1) TWI624887B (https=)

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* Cited by examiner, † Cited by third party
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JP7082862B2 (ja) * 2017-07-27 2022-06-09 ファスフォードテクノロジ株式会社 ダイボンディング装置、半導体装置の製造方法および半導体製造システム
JP7029900B2 (ja) * 2017-08-03 2022-03-04 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP7010633B2 (ja) * 2017-09-19 2022-01-26 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP7010638B2 (ja) * 2017-09-26 2022-01-26 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP6886379B2 (ja) * 2017-09-28 2021-06-16 Ｔｏｗａ株式会社 保持部材、保持部材の製造方法、検査装置及び切断装置
JP6965368B2 (ja) * 2017-12-07 2021-11-10 株式会社Fuji 情報管理装置
JP7102271B2 (ja) 2018-07-17 2022-07-19 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP7146352B2 (ja) * 2018-12-10 2022-10-04 株式会社ディスコ 試験装置
WO2020157971A1 (ja) * 2019-02-01 2020-08-06 株式会社Ｆｕｊｉ 作業機
JP7299728B2 (ja) 2019-03-22 2023-06-28 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP7300353B2 (ja) * 2019-09-13 2023-06-29 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP7377655B2 (ja) * 2019-09-19 2023-11-10 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP7437987B2 (ja) * 2020-03-23 2024-02-26 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP7502108B2 (ja) * 2020-07-31 2024-06-18 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
KR102792628B1 (ko) * 2020-11-03 2025-04-07 세메스 주식회사 다이 이송 장치 및 방법
JP7575937B2 (ja) 2020-12-21 2024-10-30 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP7635075B2 (ja) * 2021-05-28 2025-02-25 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP7788847B2 (ja) * 2021-12-21 2025-12-19 ファスフォードテクノロジ株式会社 実装装置、照明システムの調整方法および半導体装置の製造方法
DE102022118873B4 (de) * 2022-07-27 2024-02-08 ASMPT GmbH & Co. KG Verfahren und Vorrichtung zum Entnehmen von Chips von einem Waferfilmframe, Bestücksystem und Computerprogramm
JP7804547B2 (ja) * 2022-07-28 2026-01-22 ファスフォードテクノロジ株式会社 ダイボンディング装置、ダイボンディング方法および半導体装置の製造方法
WO2026078941A1 (ja) * 2024-10-10 2026-04-16 ファスフォードテクノロジ株式会社 半導体製造装置、照明装置、半導体装置の製造方法および照明方法

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JP3744966B2 (ja) * 1994-10-07 2006-02-15 株式会社ルネサステクノロジ 半導体基板の製造方法
US5774222A (en) * 1994-10-07 1998-06-30 Hitachi, Ltd. Manufacturing method of semiconductor substrative and method and apparatus for inspecting defects of patterns on an object to be inspected
JPH11345865A (ja) * 1998-06-01 1999-12-14 Sony Corp 半導体製造装置
JP2000150546A (ja) * 1998-11-16 2000-05-30 Toshiba Corp 電子部品の実装装置及び実装方法
JP2005332982A (ja) * 2004-05-20 2005-12-02 Renesas Technology Corp 半導体装置の製造方法
JP2006138830A (ja) * 2004-11-10 2006-06-01 Nippon Electro Sensari Device Kk 表面欠陥検査装置
JP4624813B2 (ja) * 2005-01-21 2011-02-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体製造装置
JP4830772B2 (ja) * 2006-10-11 2011-12-07 ヤマハ株式会社 半導体チップの検査方法
JP5054949B2 (ja) * 2006-09-06 2012-10-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2008215875A (ja) * 2007-02-28 2008-09-18 Omron Corp 成形体の検査方法およびこの方法を用いた検査装置
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Also Published As

Publication number Publication date
TW201735209A (zh) 2017-10-01
JP2017117916A (ja) 2017-06-29
TWI624887B (zh) 2018-05-21
CN106920762B (zh) 2020-03-10
CN106920762A (zh) 2017-07-04
KR20170076545A (ko) 2017-07-04

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