JP6682175B2 - 固体撮像素子および撮像システム - Google Patents

固体撮像素子および撮像システム Download PDF

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Publication number
JP6682175B2
JP6682175B2 JP2014156789A JP2014156789A JP6682175B2 JP 6682175 B2 JP6682175 B2 JP 6682175B2 JP 2014156789 A JP2014156789 A JP 2014156789A JP 2014156789 A JP2014156789 A JP 2014156789A JP 6682175 B2 JP6682175 B2 JP 6682175B2
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photoelectric conversion
signal
pixel
solid
layer
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JP2014156789A
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Japanese (ja)
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JP2016033981A (ja
JP2016033981A5 (enExample
Inventor
俊明 小野
俊明 小野
政次 板橋
政次 板橋
直樹 稲谷
直樹 稲谷
雄 前橋
雄 前橋
高橋　秀和
秀和 高橋
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014156789A priority Critical patent/JP6682175B2/ja
Priority to EP15176841.3A priority patent/EP2980851B1/en
Priority to US14/809,753 priority patent/US10136091B2/en
Priority to CN201510463215.1A priority patent/CN105323506B/zh
Priority to CN201811226086.4A priority patent/CN109378321B/zh
Publication of JP2016033981A publication Critical patent/JP2016033981A/ja
Publication of JP2016033981A5 publication Critical patent/JP2016033981A5/ja
Priority to US16/148,490 priority patent/US11159756B2/en
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/192—Colour image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/618—Noise processing, e.g. detecting, correcting, reducing or removing noise for random or high-frequency noise

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2014156789A 2014-07-31 2014-07-31 固体撮像素子および撮像システム Active JP6682175B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014156789A JP6682175B2 (ja) 2014-07-31 2014-07-31 固体撮像素子および撮像システム
EP15176841.3A EP2980851B1 (en) 2014-07-31 2015-07-15 Solid-state image pickup element and image pickup system
US14/809,753 US10136091B2 (en) 2014-07-31 2015-07-27 Solid-state image pickup element and image pickup system
CN201811226086.4A CN109378321B (zh) 2014-07-31 2015-07-31 固态图像拾取元件和图像拾取系统
CN201510463215.1A CN105323506B (zh) 2014-07-31 2015-07-31 固态图像拾取元件和图像拾取系统
US16/148,490 US11159756B2 (en) 2014-07-31 2018-10-01 Solid-state image pickup element and image pickup system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014156789A JP6682175B2 (ja) 2014-07-31 2014-07-31 固体撮像素子および撮像システム

Related Child Applications (1)

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JP2020012486A Division JP7071416B2 (ja) 2020-01-29 2020-01-29 固体撮像素子および撮像システム

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JP2016033981A JP2016033981A (ja) 2016-03-10
JP2016033981A5 JP2016033981A5 (enExample) 2017-09-07
JP6682175B2 true JP6682175B2 (ja) 2020-04-15

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US (2) US10136091B2 (enExample)
EP (1) EP2980851B1 (enExample)
JP (1) JP6682175B2 (enExample)
CN (2) CN105323506B (enExample)

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JP6682175B2 (ja) 2014-07-31 2020-04-15 キヤノン株式会社 固体撮像素子および撮像システム
TWI788994B (zh) * 2014-11-05 2023-01-01 日商索尼半導體解決方案公司 固體攝像元件及其製造方法以及電子機器
JP6301382B2 (ja) 2016-02-25 2018-03-28 矢崎総業株式会社 ワイヤハーネス
JP6789643B2 (ja) 2016-03-04 2020-11-25 キヤノン株式会社 撮像装置
US10313610B2 (en) 2016-04-14 2019-06-04 Qualcomm Incorporated Image sensors with dynamic pixel binning
US10313609B2 (en) * 2016-04-14 2019-06-04 Qualcomm Incorporated Image sensors having pixel-binning with configurable shared floating diffusion
JP6808463B2 (ja) * 2016-11-30 2021-01-06 キヤノン株式会社 光電変換装置および光電変換システム
JP6929643B2 (ja) * 2016-12-27 2021-09-01 キヤノン株式会社 撮像装置および撮像システム
JP2018107725A (ja) * 2016-12-27 2018-07-05 キヤノン株式会社 光電変換装置、撮像システム
JP7071055B2 (ja) * 2017-02-24 2022-05-18 キヤノン株式会社 撮像素子および撮像装置
CN108807434B (zh) * 2017-04-26 2023-12-05 松下知识产权经营株式会社 摄像装置及照相机系统
JP6907029B2 (ja) 2017-05-31 2021-07-21 キヤノン株式会社 撮像装置
CN110663248B (zh) * 2017-06-02 2023-10-24 索尼半导体解决方案公司 固态摄像装置和电子设备
CN115332277A (zh) * 2017-06-21 2022-11-11 索尼半导体解决方案公司 成像元件、层叠式成像元件和固态成像装置
WO2019009023A1 (ja) 2017-07-05 2019-01-10 パナソニックＩｐマネジメント株式会社 撮像装置
JP2019041352A (ja) 2017-08-29 2019-03-14 キヤノン株式会社 撮像装置及び撮像システム
KR102461817B1 (ko) * 2017-09-05 2022-10-31 엘지디스플레이 주식회사 엑스레이 검출기용 어레이 기판과 이를 포함하는 엑스레이 검출기 및 그 제조 방법
CN107634080B (zh) * 2017-09-26 2024-07-02 南京文已恒网络科技有限公司 一种多光谱摄像装置
CN109920808B (zh) * 2017-12-13 2024-05-14 松下知识产权经营株式会社 摄像装置
JP7005331B2 (ja) * 2017-12-21 2022-01-21 キヤノン株式会社 撮像装置及び撮像システム
JP2019133982A (ja) * 2018-01-29 2019-08-08 キヤノン株式会社 撮像装置、撮像システム及び移動体
TWI833774B (zh) 2018-07-31 2024-03-01 日商索尼半導體解決方案公司 固體攝像裝置
CN109087929A (zh) * 2018-08-23 2018-12-25 德淮半导体有限公司 背照式图像传感器及其制造方法
TWI685098B (zh) * 2019-02-01 2020-02-11 同泰電子科技股份有限公司 拼接式發光二極體電路板
WO2021106402A1 (ja) * 2019-11-29 2021-06-03 ソニーセミコンダクタソリューションズ株式会社 半導体装置、撮像素子、及び電子機器
CN114846609A (zh) * 2020-01-29 2022-08-02 索尼半导体解决方案公司 固态成像元件和电子设备
JP7071416B2 (ja) * 2020-01-29 2022-05-18 キヤノン株式会社 固体撮像素子および撮像システム
JP7672060B2 (ja) * 2020-11-30 2025-05-07 パナソニックＩｐマネジメント株式会社 撮像装置

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WO2014208047A1 (ja) * 2013-06-24 2014-12-31 パナソニックＩｐマネジメント株式会社 固体撮像装置およびその製造方法
WO2015045829A1 (ja) * 2013-09-27 2015-04-02 富士フイルム株式会社 撮像装置及び撮像方法
JP2015207594A (ja) * 2014-04-17 2015-11-19 パナソニックＩｐマネジメント株式会社 固体撮像装置
JP2016015430A (ja) * 2014-07-03 2016-01-28 ソニー株式会社 固体撮像素子および電子機器
JP6682175B2 (ja) 2014-07-31 2020-04-15 キヤノン株式会社 固体撮像素子および撮像システム

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Publication number Publication date
JP2016033981A (ja) 2016-03-10
CN105323506A (zh) 2016-02-10
US10136091B2 (en) 2018-11-20
EP2980851B1 (en) 2020-02-26
CN105323506B (zh) 2018-11-09
EP2980851A2 (en) 2016-02-03
CN109378321B (zh) 2023-11-07
CN109378321A (zh) 2019-02-22
US20190037160A1 (en) 2019-01-31
US11159756B2 (en) 2021-10-26
EP2980851A3 (en) 2016-08-17
US20160037117A1 (en) 2016-02-04

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