JP6677464B2 - 半導体素子及びその製造方法 - Google Patents
半導体素子及びその製造方法 Download PDFInfo
- Publication number
- JP6677464B2 JP6677464B2 JP2015165001A JP2015165001A JP6677464B2 JP 6677464 B2 JP6677464 B2 JP 6677464B2 JP 2015165001 A JP2015165001 A JP 2015165001A JP 2015165001 A JP2015165001 A JP 2015165001A JP 6677464 B2 JP6677464 B2 JP 6677464B2
- Authority
- JP
- Japan
- Prior art keywords
- patterns
- pattern
- region
- active
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 100
- 239000000758 substrate Substances 0.000 claims description 82
- 238000000034 method Methods 0.000 claims description 67
- 238000005530 etching Methods 0.000 claims description 57
- 125000006850 spacer group Chemical group 0.000 claims description 33
- 230000002093 peripheral effect Effects 0.000 claims description 18
- 238000000926 separation method Methods 0.000 claims description 15
- 238000000206 photolithography Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims 3
- 239000010410 layer Substances 0.000 description 34
- 239000000463 material Substances 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 13
- 238000002955 isolation Methods 0.000 description 13
- 239000011295 pitch Substances 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462041473P | 2014-08-25 | 2014-08-25 | |
| US62/041,473 | 2014-08-25 | ||
| KR10-2015-0014806 | 2015-01-30 | ||
| KR1020150014806A KR102290460B1 (ko) | 2014-08-25 | 2015-01-30 | 반도체 소자 및 그 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016046535A JP2016046535A (ja) | 2016-04-04 |
| JP6677464B2 true JP6677464B2 (ja) | 2020-04-08 |
Family
ID=55534432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015165001A Active JP6677464B2 (ja) | 2014-08-25 | 2015-08-24 | 半導体素子及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6677464B2 (ko) |
| KR (1) | KR102290460B1 (ko) |
| TW (1) | TWI661557B (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102637621B1 (ko) * | 2016-05-25 | 2024-02-20 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| US9679994B1 (en) * | 2016-08-30 | 2017-06-13 | Taiwan Semiconductor Manufacturing Company Limited | High fin cut fabrication process |
| TWI767844B (zh) * | 2021-09-29 | 2022-06-11 | 華邦電子股份有限公司 | 半導體結構及其形成方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7655387B2 (en) * | 2004-09-02 | 2010-02-02 | Micron Technology, Inc. | Method to align mask patterns |
| JP4704015B2 (ja) * | 2004-11-29 | 2011-06-15 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体記憶装置の製造方法 |
| US7750416B2 (en) * | 2006-05-03 | 2010-07-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Modifying work function in PMOS devices by counter-doping |
| US7790531B2 (en) * | 2007-12-18 | 2010-09-07 | Micron Technology, Inc. | Methods for isolating portions of a loop of pitch-multiplied material and related structures |
| US8198655B1 (en) * | 2009-04-27 | 2012-06-12 | Carnegie Mellon University | Regular pattern arrays for memory and logic on a semiconductor substrate |
| JP2010153899A (ja) * | 2010-02-22 | 2010-07-08 | Toshiba Corp | 半導体メモリ |
| KR20120041558A (ko) * | 2010-10-21 | 2012-05-02 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| JP2013197533A (ja) * | 2012-03-22 | 2013-09-30 | Toshiba Corp | 記憶装置及びその製造方法 |
-
2015
- 2015-01-30 KR KR1020150014806A patent/KR102290460B1/ko active IP Right Grant
- 2015-08-05 TW TW104125320A patent/TWI661557B/zh active
- 2015-08-24 JP JP2015165001A patent/JP6677464B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016046535A (ja) | 2016-04-04 |
| KR102290460B1 (ko) | 2021-08-19 |
| KR20160025436A (ko) | 2016-03-08 |
| TW201611273A (zh) | 2016-03-16 |
| TWI661557B (zh) | 2019-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102269055B1 (ko) | 반도체 소자의 제조 방법 | |
| US9324619B2 (en) | Semiconductor device and method of fabricating the same | |
| KR101508368B1 (ko) | 패터닝 방법 및 메모리 장치를 형성하는 방법 | |
| KR102318410B1 (ko) | 반도체 소자 및 이의 제조 방법 | |
| KR102257038B1 (ko) | 반도체 소자의 미세 패턴 형성 방법, 및 이를 이용한 반도체 소자의 제조방법, 및 이를 이용하여 제조된 반도체 소자 | |
| KR102192350B1 (ko) | 반도체 소자의 미세 패턴 형성 방법 및 이를 이용한 반도체 소자의 제조방법 | |
| KR102198857B1 (ko) | 랜딩 패드를 구비하는 반도체 소자 | |
| US20110318931A1 (en) | Method of Forming a Micro-Pattern for Semiconductor Devices | |
| KR101827893B1 (ko) | 도전 라인 구조물 및 그 형성 방법 | |
| KR102318393B1 (ko) | 전계 효과 트랜지스터를 포함하는 반도체 소자 | |
| KR20160125859A (ko) | 반도체 소자의 패턴 형성 방법 | |
| US20150028410A1 (en) | Non-volatile memory device and method for manufacturing same | |
| KR100924344B1 (ko) | 리세스 채널을 갖는 반도체 소자 및 그 제조방법 | |
| US10103030B2 (en) | Methods of fabricating semiconductor devices | |
| JP6677464B2 (ja) | 半導体素子及びその製造方法 | |
| US9564340B2 (en) | Method of manufacturing semiconductor device | |
| JP6094023B2 (ja) | 半導体装置の製造方法 | |
| US10410886B2 (en) | Methods of fabricating a semiconductor device | |
| JP2008103729A (ja) | 半導体素子及びその形成方法 | |
| JP2010258224A (ja) | 不揮発性半導体記憶装置及びその製造方法 | |
| US9349813B2 (en) | Method for fabricating semiconductor device | |
| JP6292281B2 (ja) | 半導体装置の製造方法 | |
| KR102085082B1 (ko) | 반도체 장치 및 그 제조방법 | |
| KR20140023764A (ko) | 반도체 장치 및 그 제조방법 | |
| KR20040059375A (ko) | 자기 정렬 컨택을 이용한 노아 플래시 셀 어레이의 사이즈축소 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20161222 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20161228 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180807 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190815 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190820 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191120 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200310 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200313 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6677464 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |