JP6665673B2 - 強誘電体薄膜の製造方法 - Google Patents

強誘電体薄膜の製造方法 Download PDF

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Publication number
JP6665673B2
JP6665673B2 JP2016095911A JP2016095911A JP6665673B2 JP 6665673 B2 JP6665673 B2 JP 6665673B2 JP 2016095911 A JP2016095911 A JP 2016095911A JP 2016095911 A JP2016095911 A JP 2016095911A JP 6665673 B2 JP6665673 B2 JP 6665673B2
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film
thin film
substrate
ferroelectric thin
outer peripheral
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JP2016095911A
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Japanese (ja)
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JP2017204573A (ja
Inventor
敏昭 渡辺
敏昭 渡辺
曽山　信幸
信幸 曽山
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Priority to JP2016095911A priority Critical patent/JP6665673B2/ja
Priority to KR1020170056942A priority patent/KR102299871B1/ko
Publication of JP2017204573A publication Critical patent/JP2017204573A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8536—Alkaline earth metal based oxides, e.g. barium titanates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
JP2016095911A 2016-05-12 2016-05-12 強誘電体薄膜の製造方法 Active JP6665673B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016095911A JP6665673B2 (ja) 2016-05-12 2016-05-12 強誘電体薄膜の製造方法
KR1020170056942A KR102299871B1 (ko) 2016-05-12 2017-05-04 강유전체 박막의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016095911A JP6665673B2 (ja) 2016-05-12 2016-05-12 強誘電体薄膜の製造方法

Publications (2)

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JP2017204573A JP2017204573A (ja) 2017-11-16
JP6665673B2 true JP6665673B2 (ja) 2020-03-13

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JP2016095911A Active JP6665673B2 (ja) 2016-05-12 2016-05-12 強誘電体薄膜の製造方法

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JP (1) JP6665673B2 (ko)
KR (1) KR102299871B1 (ko)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005217219A (ja) * 2004-01-30 2005-08-11 Hitachi Cable Ltd 強誘電体薄膜及びその製造方法
US8859051B2 (en) * 2008-05-28 2014-10-14 Mitsubishi Materials Corporation Composition for ferroelectric thin film formation, method for forming ferroelectric thin film and ferroelectric thin film formed by the method thereof
JP5381410B2 (ja) 2009-06-30 2014-01-08 三菱マテリアル株式会社 強誘電体薄膜の製造方法
JP5828293B2 (ja) * 2011-05-17 2015-12-02 三菱マテリアル株式会社 Ｐｚｔ強誘電体薄膜の製造方法

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JP2017204573A (ja) 2017-11-16
KR20170128101A (ko) 2017-11-22
KR102299871B1 (ko) 2021-09-07

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