JP6657149B2 - 炭化珪素半導体素子の製造方法 - Google Patents
炭化珪素半導体素子の製造方法 Download PDFInfo
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- JP6657149B2 JP6657149B2 JP2017150408A JP2017150408A JP6657149B2 JP 6657149 B2 JP6657149 B2 JP 6657149B2 JP 2017150408 A JP2017150408 A JP 2017150408A JP 2017150408 A JP2017150408 A JP 2017150408A JP 6657149 B2 JP6657149 B2 JP 6657149B2
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| JP2017150408A JP6657149B2 (ja) | 2017-08-03 | 2017-08-03 | 炭化珪素半導体素子の製造方法 |
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| JP2017150408A JP6657149B2 (ja) | 2017-08-03 | 2017-08-03 | 炭化珪素半導体素子の製造方法 |
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| JP2016058531A Division JP6208275B2 (ja) | 2016-03-23 | 2016-03-23 | 炭化珪素半導体素子の製造方法 |
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| JP2017195422A JP2017195422A (ja) | 2017-10-26 |
| JP2017195422A5 JP2017195422A5 (https=) | 2019-03-07 |
| JP6657149B2 true JP6657149B2 (ja) | 2020-03-04 |
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| JP2017150408A Active JP6657149B2 (ja) | 2017-08-03 | 2017-08-03 | 炭化珪素半導体素子の製造方法 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201917734D0 (en) * | 2019-12-04 | 2020-01-15 | Spts Technologies Ltd | Method, substrate and apparatus |
| GB202119119D0 (en) * | 2021-12-30 | 2022-02-16 | Spts Technologies Ltd | Plasma etched silicon carbide |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5842138B2 (ja) * | 2012-08-24 | 2016-01-13 | パナソニックＩｐマネジメント株式会社 | ＳｉＣ基板のエッチング方法 |
| JP6279933B2 (ja) * | 2014-02-28 | 2018-02-14 | Ｓｐｐテクノロジーズ株式会社 | 炭化珪素半導体素子の製造方法 |
| JP2017112293A (ja) * | 2015-12-18 | 2017-06-22 | パナソニックＩｐマネジメント株式会社 | 溝を有するシリコンカーバイド基板の製造方法 |
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| JP2017195422A (ja) | 2017-10-26 |
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