JP2017195422A5 - - Google Patents
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- Publication number
- JP2017195422A5 JP2017195422A5 JP2017150408A JP2017150408A JP2017195422A5 JP 2017195422 A5 JP2017195422 A5 JP 2017195422A5 JP 2017150408 A JP2017150408 A JP 2017150408A JP 2017150408 A JP2017150408 A JP 2017150408A JP 2017195422 A5 JP2017195422 A5 JP 2017195422A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon carbide
- manufacturing
- silicon
- carbide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 230000001681 protective effect Effects 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 235000012239 silicon dioxide Nutrition 0.000 claims 3
- 239000000377 silicon dioxide Substances 0.000 claims 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 238000009616 inductively coupled plasma Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017150408A JP6657149B2 (ja) | 2017-08-03 | 2017-08-03 | 炭化珪素半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017150408A JP6657149B2 (ja) | 2017-08-03 | 2017-08-03 | 炭化珪素半導体素子の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016058531A Division JP6208275B2 (ja) | 2016-03-23 | 2016-03-23 | 炭化珪素半導体素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017195422A JP2017195422A (ja) | 2017-10-26 |
| JP2017195422A5 true JP2017195422A5 (https=) | 2019-03-07 |
| JP6657149B2 JP6657149B2 (ja) | 2020-03-04 |
Family
ID=60156558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017150408A Active JP6657149B2 (ja) | 2017-08-03 | 2017-08-03 | 炭化珪素半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6657149B2 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201917734D0 (en) * | 2019-12-04 | 2020-01-15 | Spts Technologies Ltd | Method, substrate and apparatus |
| GB202119119D0 (en) * | 2021-12-30 | 2022-02-16 | Spts Technologies Ltd | Plasma etched silicon carbide |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5842138B2 (ja) * | 2012-08-24 | 2016-01-13 | パナソニックＩｐマネジメント株式会社 | ＳｉＣ基板のエッチング方法 |
| JP6279933B2 (ja) * | 2014-02-28 | 2018-02-14 | Ｓｐｐテクノロジーズ株式会社 | 炭化珪素半導体素子の製造方法 |
| JP2017112293A (ja) * | 2015-12-18 | 2017-06-22 | パナソニックＩｐマネジメント株式会社 | 溝を有するシリコンカーバイド基板の製造方法 |
-
2017
- 2017-08-03 JP JP2017150408A patent/JP6657149B2/ja active Active
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