JP6652042B2 - Iii−v族窒化物半導体エピタキシャルウェハの製造方法 - Google Patents
Iii−v族窒化物半導体エピタキシャルウェハの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 150000004767 nitrides Chemical class 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 15
- 239000007789 gas Substances 0.000 claims description 75
- 230000012010 growth Effects 0.000 claims description 51
- 230000004888 barrier function Effects 0.000 claims description 37
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 109
- 230000006866 deterioration Effects 0.000 description 10
- 230000006911 nucleation Effects 0.000 description 10
- 238000010899 nucleation Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000010348 incorporation Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
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Description
図1は、この発明の実施の形態1に係る製造方法で作製されたエピタキシャルウェハの断面構造を模式的に表した図である。エピタキシャルウェハはSiC、Si又はサファイアなどで作られた基板1を備える。なお基板1、及び、基板1の上に各種半導体が積層された状態の構造体を半導体基体と呼ぶ。
この発明の実施の形態2に係る製造方法で作製されたエピタキシャルウェハの断面構造は実施の形態1と同様であり、断面図は模式的に図1で示される。
この発明の実施の形態3に係る製造方法で作製されたエピタキシャルウェハの断面構造は実施の形態1と同様であり、断面図は模式的に図1で示される。
この発明の実施の形態4に係る製造方法で作製されたエピタキシャルウェハの断面構造は実施の形態1と同様であり、断面図は模式的に図1で示される。
Claims (9)
- Ga原料ガス及び窒素原料ガスを供給し、半導体基体上にGaNチャネル層を成長させる第1成長工程と、
前記第1成長工程のあと、少なくとも前記窒素原料ガスを供給しながら温度を下げる降温工程と、
前記降温工程のあと、前記Ga原料ガスを供給せず、かつ、Al原料ガス及び前記窒素原料ガスを供給するプリフロー工程と、
前記プリフロー工程のあと、前記Al原料ガス及び前記Ga原料ガスを供給せず、かつ、前記窒素原料ガスを供給しながら温度を上げる昇温工程と、
前記昇温工程のあと、前記Al原料ガス及び前記窒素原料ガスを供給し、かつ、前記Ga原料ガス及びIn原料ガスのうち少なくともいずれか一方を供給し、AlxGayInzNバリア層(x+y+z=1、x>0、y≧0、z≧0、y+z>0)を成長させる第2成長工程と、
を備えたIII−V族窒化物半導体エピタキシャルウェハの製造方法。 - 前記プリフロー工程における温度が900℃以上、1050℃以下であることを特徴とする請求項1に記載のIII−V族窒化物半導体エピタキシャルウェハの製造方法。
- 前記プリフロー工程において成長する層の厚さが2ML以下であることを特徴とする請求項1又は2に記載のIII−V族窒化物半導体エピタキシャルウェハの製造方法。
- 前記降温工程において、前記Ga原料ガスを供給しないことを特徴とする請求項1〜3のいずれか1項に記載のIII−V族窒化物半導体エピタキシャルウェハの製造方法。
- 前記プリフロー工程におけるV/III比が前記第1成長工程及び前記第2成長工程におけるV/III比に比べて高いことを特徴とする請求項1〜3のいずれか1項に記載のIII−V族窒化物半導体エピタキシャルウェハの製造方法。
- 前記降温工程において、前記Ga原料ガスを供給することを特徴とする請求項1〜3のいずれか1項に記載のIII−V族窒化物半導体エピタキシャルウェハの製造方法。
- 前記プリフロー工程におけるV/III比が前記第1成長工程及び前記第2成長工程におけるV/III比に比べて高く、
前記降温工程において、前記Ga原料ガスを供給し、かつ、V/III比を徐々に高くすることを特徴とする請求項1〜3のいずれか1項に記載のIII−V族窒化物半導体エピタキシャルウェハの製造方法。 - 前記第1成長工程、前記プリフロー工程及び前記第2成長工程におけるエピタキシャル成長がMOCVD法を用いてなされることを特徴とする請求項1〜5のいずれか1項に記載のIII−V族窒化物半導体エピタキシャルウェハの製造方法。
- 前記第1成長工程、前記降温工程、前記プリフロー工程及び前記第2成長工程におけるエピタキシャル成長がMOCVD法を用いてなされることを特徴とする請求項6〜7のいずれか1項に記載のIII−V族窒化物半導体エピタキシャルウェハの製造方法。
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JP2016241448A JP6652042B2 (ja) | 2016-12-13 | 2016-12-13 | Iii−v族窒化物半導体エピタキシャルウェハの製造方法 |
US15/657,242 US10199218B2 (en) | 2016-12-13 | 2017-07-24 | Method for manufacturing group III-V nitride semiconductor epitaxial wafer |
CN201711326833.7A CN108231556B (zh) | 2016-12-13 | 2017-12-13 | Iii-v族氮化物半导体外延片的制造方法 |
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TWI701717B (zh) | 2019-08-12 | 2020-08-11 | 環球晶圓股份有限公司 | 磊晶結構 |
CN113502460B (zh) * | 2021-09-09 | 2021-12-03 | 苏州长光华芯光电技术股份有限公司 | 一种半导体结构的制备方法、半导体生长设备 |
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JPS5478083A (en) * | 1977-12-05 | 1979-06-21 | Nippon Telegr & Teleph Corp <Ntt> | Vapour-phase growth and vapour-phase growth unit |
US5843590A (en) * | 1994-12-26 | 1998-12-01 | Sumitomo Electric Industries, Ltd. | Epitaxial wafer and method of preparing the same |
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