JP6650452B2 - ミラー、特にマイクロリソグラフィ用のコレクタミラー - Google Patents

ミラー、特にマイクロリソグラフィ用のコレクタミラー Download PDF

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Publication number
JP6650452B2
JP6650452B2 JP2017528558A JP2017528558A JP6650452B2 JP 6650452 B2 JP6650452 B2 JP 6650452B2 JP 2017528558 A JP2017528558 A JP 2017528558A JP 2017528558 A JP2017528558 A JP 2017528558A JP 6650452 B2 JP6650452 B2 JP 6650452B2
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Japan
Prior art keywords
mirror
facet
grating
elliptical
focal point
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JP2017528558A
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English (en)
Japanese (ja)
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JP2017538966A5 (enExample
JP2017538966A (ja
Inventor
バウアー マルクス
バウアー マルクス
Original Assignee
カール・ツァイス・エスエムティー・ゲーエムベーハー
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0019—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors)
    • G02B19/0023—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors) at least one surface having optical power
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/09—Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
JP2017528558A 2014-11-27 2015-11-26 ミラー、特にマイクロリソグラフィ用のコレクタミラー Active JP6650452B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014117453.4 2014-11-27
DE102014117453.4A DE102014117453A1 (de) 2014-11-27 2014-11-27 Kollektorspiegel für Mikrolithografie
PCT/EP2015/077717 WO2016083487A1 (de) 2014-11-27 2015-11-26 Spiegel, insbesondere kollektorspiegel für mikrolithografie

Publications (3)

Publication Number Publication Date
JP2017538966A JP2017538966A (ja) 2017-12-28
JP2017538966A5 JP2017538966A5 (enExample) 2019-01-10
JP6650452B2 true JP6650452B2 (ja) 2020-02-19

Family

ID=54937003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017528558A Active JP6650452B2 (ja) 2014-11-27 2015-11-26 ミラー、特にマイクロリソグラフィ用のコレクタミラー

Country Status (5)

Country Link
US (1) US10101569B2 (enExample)
EP (1) EP3224677B1 (enExample)
JP (1) JP6650452B2 (enExample)
DE (1) DE102014117453A1 (enExample)
WO (1) WO2016083487A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10754012B2 (en) * 2019-01-04 2020-08-25 Blackmore Sensors & Analytics, Llc Lidar system including multifaceted deflector
EP3949617A1 (en) 2019-03-27 2022-02-09 Telefonaktiebolaget LM Ericsson (publ) Methods for sl sr/bsr handling
CN110146992A (zh) * 2019-05-10 2019-08-20 厦门市承谱科学仪器有限公司 一种激光二极管阵列的光束整形装置
DE102019213063A1 (de) * 2019-08-30 2021-03-04 Carl Zeiss Smt Gmbh Optische Beugungskomponente
JP7403271B2 (ja) * 2019-10-10 2023-12-22 ギガフォトン株式会社 極端紫外光集光ミラー、極端紫外光生成装置、及び電子デバイスの製造方法
DE102019215829A1 (de) 2019-10-15 2021-04-15 Asml Netherlands B.V. EUV-Kollektorspiegel
DE102020208298A1 (de) * 2020-07-02 2022-01-05 Carl Zeiss Smt Gmbh EUV-Kollektor
DE102022207359A1 (de) 2022-07-19 2024-01-25 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Bestimmen eines Passformfehlers bei einem Hohlspiegel
WO2025233082A1 (en) * 2024-05-07 2025-11-13 Carl Zeiss Smt Gmbh Collector device, wafer inspection apparatus having a collector device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4995714A (en) * 1988-08-26 1991-02-26 Cohen Allen L Multifocal optical device with novel phase zone plate and method for making
US5153780A (en) * 1991-06-10 1992-10-06 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for uniformly concentrating solar flux for photovoltaic applications
EP0519112B1 (de) * 1991-06-21 1996-03-13 Tetsuhiro Kano Reflektor und Verfahren zum Erzeugen einer Reflektorform
DE10214259A1 (de) * 2002-03-28 2003-10-23 Zeiss Carl Semiconductor Mfg Kollektoreinheit für Beleuchtungssysteme mit einer Wellenlänge <193 nm
US7623235B2 (en) * 2004-03-20 2009-11-24 Seng-Tiong Ho Curved grating spectrometer with very high wavelength resolution
JP4508708B2 (ja) * 2004-04-12 2010-07-21 キヤノン株式会社 Ｅｕｖ光を用いた露光装置および露光方法
JP5061069B2 (ja) * 2008-05-20 2012-10-31 ギガフォトン株式会社 極端紫外光を用いる半導体露光装置
US8227778B2 (en) 2008-05-20 2012-07-24 Komatsu Ltd. Semiconductor exposure device using extreme ultra violet radiation
JP5061063B2 (ja) * 2008-05-20 2012-10-31 ギガフォトン株式会社 極端紫外光用ミラーおよび極端紫外光源装置
FR2941528A1 (fr) * 2009-01-27 2010-07-30 Univ Paris Curie Spectrographe a miroir elliptique
DE102009044462A1 (de) * 2009-11-06 2011-01-05 Carl Zeiss Smt Ag Optisches Element, Beleuchtungssystem und Projektionsbelichtungsanlage
DE102010063530A1 (de) * 2009-12-22 2011-06-30 Carl Zeiss SMT GmbH, 73447 Blendenelement und optisches System für die EUV-Lithographie
DE102011084266A1 (de) * 2011-10-11 2013-04-11 Carl Zeiss Smt Gmbh Kollektor
NL2010274C2 (en) * 2012-02-11 2015-02-26 Media Lario Srl Source-collector modules for euv lithography employing a gic mirror and a lpp source.
US20140118830A1 (en) 2012-10-25 2014-05-01 L-3 Integrated Optical Systems Tinsley Optical grating including a smoothing layer
NL2012499A (en) * 2013-04-17 2014-10-20 Asml Netherlands Bv Radiation collector, radiation source and lithographic apparatus.
CN103499851B (zh) * 2013-09-29 2015-06-10 清华大学深圳研究生院 一种闪耀凹面光栅制作方法

Also Published As

Publication number Publication date
EP3224677A1 (de) 2017-10-04
US20170254995A1 (en) 2017-09-07
WO2016083487A1 (de) 2016-06-02
JP2017538966A (ja) 2017-12-28
US10101569B2 (en) 2018-10-16
DE102014117453A1 (de) 2016-06-02
EP3224677B1 (de) 2018-10-10

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