JP6643975B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP6643975B2
JP6643975B2 JP2016256337A JP2016256337A JP6643975B2 JP 6643975 B2 JP6643975 B2 JP 6643975B2 JP 2016256337 A JP2016256337 A JP 2016256337A JP 2016256337 A JP2016256337 A JP 2016256337A JP 6643975 B2 JP6643975 B2 JP 6643975B2
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JP
Japan
Prior art keywords
pressure
metal layer
sintered metal
bonding
semiconductor device
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JP2016256337A
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English (en)
Japanese (ja)
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JP2018110149A (ja
JP2018110149A5 (https=
Inventor
宏貴 園田
宏貴 園田
亜弥 武藤
亜弥 武藤
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2016256337A priority Critical patent/JP6643975B2/ja
Publication of JP2018110149A publication Critical patent/JP2018110149A/ja
Publication of JP2018110149A5 publication Critical patent/JP2018110149A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/533—Cross-sectional shape
    • H10W72/534—Cross-sectional shape being rectangular
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

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  • Die Bonding (AREA)
JP2016256337A 2016-12-28 2016-12-28 半導体装置の製造方法 Active JP6643975B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016256337A JP6643975B2 (ja) 2016-12-28 2016-12-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016256337A JP6643975B2 (ja) 2016-12-28 2016-12-28 半導体装置の製造方法

Publications (3)

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JP2018110149A JP2018110149A (ja) 2018-07-12
JP2018110149A5 JP2018110149A5 (https=) 2018-12-27
JP6643975B2 true JP6643975B2 (ja) 2020-02-12

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JP2016256337A Active JP6643975B2 (ja) 2016-12-28 2016-12-28 半導体装置の製造方法

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JP (1) JP6643975B2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113169083B (zh) * 2019-06-20 2024-12-31 富士电机株式会社 半导体装置以及半导体装置的制造方法
JP7484097B2 (ja) * 2019-07-18 2024-05-16 株式会社レゾナック 半導体装置
JP7247053B2 (ja) * 2019-08-02 2023-03-28 株式会社東芝 半導体装置
JP7404208B2 (ja) * 2020-09-24 2023-12-25 株式会社東芝 半導体装置
JP7768897B2 (ja) * 2020-11-27 2025-11-12 ローム株式会社 半導体装置
JP7827833B2 (ja) 2022-03-30 2026-03-10 三井金属株式会社 接合体の製造方法及び被接合体の接合方法
JP2025077454A (ja) * 2023-11-06 2025-05-19 ミネベアパワーデバイス株式会社 半導体装置
WO2026003997A1 (ja) * 2024-06-26 2026-01-02 三菱電機株式会社 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5542567B2 (ja) * 2010-07-27 2014-07-09 三菱電機株式会社 半導体装置
JP2014029897A (ja) * 2012-07-31 2014-02-13 Hitachi Ltd 導電性接合体およびそれを用いた半導体装置
JP6147176B2 (ja) * 2013-12-02 2017-06-14 三菱電機株式会社 半導体素子の基板への接合方法

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JP2018110149A (ja) 2018-07-12

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