JP6626997B2 - 検査システム - Google Patents
検査システム Download PDFInfo
- Publication number
- JP6626997B2 JP6626997B2 JP2019006089A JP2019006089A JP6626997B2 JP 6626997 B2 JP6626997 B2 JP 6626997B2 JP 2019006089 A JP2019006089 A JP 2019006089A JP 2019006089 A JP2019006089 A JP 2019006089A JP 6626997 B2 JP6626997 B2 JP 6626997B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- wavelength
- laser
- generator
- harmonic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000007689 inspection Methods 0.000 title claims description 66
- 238000005286 illumination Methods 0.000 claims description 65
- 230000003287 optical effect Effects 0.000 claims description 56
- 238000002156 mixing Methods 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 13
- 230000007547 defect Effects 0.000 claims description 8
- 238000013480 data collection Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 2
- 239000013078 crystal Substances 0.000 description 54
- 238000010586 diagram Methods 0.000 description 33
- 238000006243 chemical reaction Methods 0.000 description 31
- 238000003384 imaging method Methods 0.000 description 30
- 239000000835 fiber Substances 0.000 description 24
- 238000001069 Raman spectroscopy Methods 0.000 description 23
- 210000001747 pupil Anatomy 0.000 description 23
- 230000005855 radiation Effects 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000005350 fused silica glass Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 10
- 238000007493 shaping process Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 239000012141 concentrate Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 5
- 230000033001 locomotion Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 235000019796 monopotassium phosphate Nutrition 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- NNAZVIPNYDXXPF-UHFFFAOYSA-N [Li+].[Cs+].OB([O-])[O-] Chemical compound [Li+].[Cs+].OB([O-])[O-] NNAZVIPNYDXXPF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- PSNPEOOEWZZFPJ-UHFFFAOYSA-N alumane;yttrium Chemical compound [AlH3].[Y] PSNPEOOEWZZFPJ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- XBJJRSFLZVLCSE-UHFFFAOYSA-N barium(2+);diborate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]B([O-])[O-].[O-]B([O-])[O-] XBJJRSFLZVLCSE-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- VCZFPTGOQQOZGI-UHFFFAOYSA-N lithium bis(oxoboranyloxy)borinate Chemical compound [Li+].[O-]B(OB=O)OB=O VCZFPTGOQQOZGI-UHFFFAOYSA-N 0.000 description 1
- HIQSCMNRKRMPJT-UHFFFAOYSA-J lithium;yttrium(3+);tetrafluoride Chemical compound [Li+].[F-].[F-].[F-].[F-].[Y+3] HIQSCMNRKRMPJT-UHFFFAOYSA-J 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- IDEDFOKHQXDWGJ-UHFFFAOYSA-N nonacesium triborate Chemical compound [Cs+].[Cs+].[Cs+].[Cs+].[Cs+].[Cs+].[Cs+].[Cs+].[Cs+].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-] IDEDFOKHQXDWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- -1 potassium fluoroborate Chemical compound 0.000 description 1
- ZBWBYBYOJRDPDE-UHFFFAOYSA-K potassium titanium(4+) phosphate Chemical compound P(=O)([O-])([O-])[O-].[Ti+4].[K+] ZBWBYBYOJRDPDE-UHFFFAOYSA-K 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000006335 response to radiation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0892—Catadioptric systems specially adapted for the UV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10053—Phase control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
- H01S3/302—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects in an optical fibre
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/354—Third or higher harmonic generation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
- G02F1/395—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves in optical waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06754—Fibre amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1666—Solid materials characterised by a crystal matrix borate, carbonate, arsenide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Lasers (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Nonlinear Science (AREA)
Description
本出願は、2013年2月13日出願の米国仮特許出願第61/764、441号の優先権を主張し、参照により本明細書に組み込まれる。
本出願は、米国特許出願第13/797、939号、題名「Solid−state 193nm laser and an Inspection System using a Solid−State 193nm laser」(Chuangら、2013年5月12日出願)に関し、本明細書において参考として援用される。本出願はまた、米国特許出願第11/735、967号、題名「Coherent light generation below about 200 nm」(Dribinskiら、2007年4月16日出願)、PCT公開出願第WO2012/154468号(Leiら、2012年11月15日公開)、米国仮特許出願第61/538,353号、題名「Solid−State 193nm Laser And An Inspection System Using A Solid−State 193nm Laser」(Chuangら、2011年9月23日出願)、米国仮特許出願第61/559,292号、題名「Solid−State 193nm Laser And An Inspection System Using A Solid−State 193nm Laser」(Chuangら、2011年11月14日出願)、米国仮特許出願第61/591,384号、題名「Solid−State 193nm Laser And An Inspection System Using A Solid−State 193nm Laser」(Chuangら、2012年1月27日出願)、米国仮特許出願第61/603,911号、題名「Solid−State 193nm Laser And An Inspection System Using A Solid−State 193nm Laser」(Chuangら、2012年2月27日出願)、米国特許出願第13/558,318号、題名「193nm Laser and Inspection System using 193nm Laser」(Chuangら、2012年7月25日出願)、米国仮特許出願第61/666,675号、題名「Scan rate for Continuous Motion of a Crystal in a Frequency Converted Laser」(Armstrongら、2012年6月29日出願)、米国特許出願第14/022/190号(代理人整理番号KLA−050 P3996)、題名「Solid State Illumination Source And Inspection System」(Armstrongら、2013年9月9日出願)及び米国特許出願第14/158、615号(代理人整理番号KLA−052 P4060)、題名「193nm Laser and Inspection System」(Chuangら、2014年1月17日出願)に関する。前述の出願はすべて本明細書に参考として援用される。
Claims (3)
- フォトマスク、レチクル、または半導体ウェハーの表面に欠陥がないかを検査する光学検査システムであって、
入射光線を照射する光源であって、約1109nmの波長にある光を約234nmの波長にある光と混ぜ合わせて、190nm〜200nmの波長にある光を発生させる周波数混合ステージを含む光源と、
前記フォトマスク、レチクル、または半導体ウェハーの表面に前記入射光線を向ける複数の光学構成要素を含む光学系と、
前記フォトマスク、レチクル、または半導体ウェハーから反射または伝達された光の少なくとも2つの経路を選択し、かつ、センサーに前記光を中継する光学素子と、
前記光の少なくとも2つの経路を同時に検出するセンサーとを備え、
前記光学素子が前記190nm〜200nmの波長にある光の干渉性を低減する少なくとも1つの電気光学変調器をさらに備え、
前記周波数混合ステージは、
前記約1109nmの波長にある光を前記約234nmの波長にある光と混ぜ合わせて、前記190nm〜200nmの波長にある光を発生させる周波数混合器と、
前記周波数混合器からの前記約1109nmの波長にある光の一部から約1171nmの波長にある光を発生させる1171nm発生器と、
前記1171nm発生器からの前記約1171nmの波長にある光から前記約234nmの波長にある光を発生させて前記周波数混合器に向ける第5高調波発生器と、
を備える、光学検査システム。 - フォトマスク、レチクル、または半導体ウェハーの表面に欠陥がないかを検査する光学検査システムであって、
入射光線を照射する光源であって、約1109nmの波長にある光を約234nmの波長にある光と混ぜ合わせて、190nm〜200nmの波長にある光を発生させる周波数混合ステージを含む光源と、
前記フォトマスク、レチクル、または半導体ウェハーの表面に前記入射光線を向ける複数の光学構成要素を含む光学系と、
前記フォトマスク、レチクル、または半導体ウェハーから反射または伝達された光の少なくとも2つの経路を選択し、かつ、センサーに前記光を中継する光学素子と、
前記光の少なくとも2つの経路を同時に検出するセンサーとを備え、
前記光の少なくとも2つの経路が、前記フォトマスク、レチクル、または半導体ウェハーの表面から反射された光及び前記フォトマスク、レチクル、または半導体ウェハーを通って伝達された光を含み、
前記周波数混合ステージは、
前記約1109nmの波長にある光を前記約234nmの波長にある光と混ぜ合わせて、前記190nm〜200nmの波長にある光を発生させる周波数混合器と、
前記周波数混合器からの前記約1109nmの波長にある光の一部から約1171nmの波長にある光を発生させる1171nm発生器と、
前記1171nm発生器からの前記約1171nmの波長にある光から前記約234nmの波長にある光を発生させて前記周波数混合器に向ける第5高調波発生器と、
を備える、光学検査システム。 - サンプルの表面を検査する検査システムであって、
複数の光の経路を生成するよう構成された照明サブシステムであって、生成されたそれぞれの光の経路が少なくとも1つの他の光エネルギーの経路とは異なる特性を有し、前記照明サブシステムが、約1109nmの波長にある光を約234nmの波長にある光と混ぜ合わせて、少なくとも1つの経路に対して、190nm〜200nmの波長にある光を発生させる周波数混合ステージを含む、照明サブシステムと、
前記複数の光の経路を受け取り、かつ、空間的に分離された混合光線に複数の光エネルギーの経路を混合し、かつ、前記サンプルに前記空間的に分離された混合光線を向けるよう構成された光学素子と、
前記サンプルから反射された光を検出する、少なくとも1つの検出器を備えるデータ収集サブシステムとを備え、
前記データ収集サブシステムが前記複数の光の経路に対応する複数の受け取られた経路に前記反射された光を分離するよう構成され、
前記周波数混合ステージは、
前記約1109nmの波長にある光を前記約234nmの波長にある光と混ぜ合わせて、前記190nm〜200nmの波長にある光を発生させる周波数混合器と、
前記周波数混合器からの前記約1109nmの波長にある光の一部から約1171nmの波長にある光を発生させる1171nm発生器と、
前記1171nm発生器からの前記約1171nmの波長にある光から前記約234nmの波長にある光を発生させて前記周波数混合器に向ける第5高調波発生器と、
を備える、検査システム。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019218274A JP6954980B2 (ja) | 2013-02-13 | 2019-12-02 | 光学検査システム、光学検査方法、及びレーザー |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361764441P | 2013-02-13 | 2013-02-13 | |
US61/764,441 | 2013-02-13 | ||
US14/170,384 US9529182B2 (en) | 2013-02-13 | 2014-01-31 | 193nm laser and inspection system |
US14/170,384 | 2014-01-31 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015558125A Division JP2016508627A (ja) | 2013-02-13 | 2014-02-13 | 193nmレーザー及び検査システム |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019218274A Division JP6954980B2 (ja) | 2013-02-13 | 2019-12-02 | 光学検査システム、光学検査方法、及びレーザー |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019082716A JP2019082716A (ja) | 2019-05-30 |
JP6626997B2 true JP6626997B2 (ja) | 2019-12-25 |
Family
ID=51297240
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015558125A Pending JP2016508627A (ja) | 2013-02-13 | 2014-02-13 | 193nmレーザー及び検査システム |
JP2019006089A Active JP6626997B2 (ja) | 2013-02-13 | 2019-01-17 | 検査システム |
JP2019218274A Active JP6954980B2 (ja) | 2013-02-13 | 2019-12-02 | 光学検査システム、光学検査方法、及びレーザー |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015558125A Pending JP2016508627A (ja) | 2013-02-13 | 2014-02-13 | 193nmレーザー及び検査システム |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019218274A Active JP6954980B2 (ja) | 2013-02-13 | 2019-12-02 | 光学検査システム、光学検査方法、及びレーザー |
Country Status (5)
Country | Link |
---|---|
US (3) | US9529182B2 (ja) |
JP (3) | JP2016508627A (ja) |
KR (3) | KR102309984B1 (ja) |
TW (2) | TWI632752B (ja) |
WO (1) | WO2014127100A1 (ja) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9793673B2 (en) | 2011-06-13 | 2017-10-17 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
US8873596B2 (en) | 2011-07-22 | 2014-10-28 | Kla-Tencor Corporation | Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal |
US9496425B2 (en) | 2012-04-10 | 2016-11-15 | Kla-Tencor Corporation | Back-illuminated sensor with boron layer |
US9151940B2 (en) | 2012-12-05 | 2015-10-06 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
US8929406B2 (en) | 2013-01-24 | 2015-01-06 | Kla-Tencor Corporation | 193NM laser and inspection system |
US9529182B2 (en) | 2013-02-13 | 2016-12-27 | KLA—Tencor Corporation | 193nm laser and inspection system |
US9608399B2 (en) | 2013-03-18 | 2017-03-28 | Kla-Tencor Corporation | 193 nm laser and an inspection system using a 193 nm laser |
US9478402B2 (en) | 2013-04-01 | 2016-10-25 | Kla-Tencor Corporation | Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor |
US9410901B2 (en) | 2014-03-17 | 2016-08-09 | Kla-Tencor Corporation | Image sensor, an inspection system and a method of inspecting an article |
US9804101B2 (en) | 2014-03-20 | 2017-10-31 | Kla-Tencor Corporation | System and method for reducing the bandwidth of a laser and an inspection system and method using a laser |
US9419407B2 (en) | 2014-09-25 | 2016-08-16 | Kla-Tencor Corporation | Laser assembly and inspection system using monolithic bandwidth narrowing apparatus |
US9748729B2 (en) | 2014-10-03 | 2017-08-29 | Kla-Tencor Corporation | 183NM laser and inspection system |
CN104759753B (zh) * | 2015-03-30 | 2016-08-31 | 江苏大学 | 多系统自动化协调工作提高激光诱导空化强化的方法 |
US9860466B2 (en) | 2015-05-14 | 2018-01-02 | Kla-Tencor Corporation | Sensor with electrically controllable aperture for inspection and metrology systems |
US10748730B2 (en) | 2015-05-21 | 2020-08-18 | Kla-Tencor Corporation | Photocathode including field emitter array on a silicon substrate with boron layer |
US10462391B2 (en) | 2015-08-14 | 2019-10-29 | Kla-Tencor Corporation | Dark-field inspection using a low-noise sensor |
WO2017064789A1 (ja) * | 2015-10-15 | 2017-04-20 | 国立大学法人 東京大学 | 固体レーザシステムおよびエキシマレーザシステム |
US10313622B2 (en) | 2016-04-06 | 2019-06-04 | Kla-Tencor Corporation | Dual-column-parallel CCD sensor and inspection systems using a sensor |
US10778925B2 (en) | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
US9945730B2 (en) | 2016-09-02 | 2018-04-17 | Cymer, Llc | Adjusting an amount of coherence of a light beam |
JP6306659B1 (ja) * | 2016-10-19 | 2018-04-04 | ファナック株式会社 | ビーム分配器 |
US10012544B2 (en) * | 2016-11-29 | 2018-07-03 | Cymer, Llc | Homogenization of light beam for spectral feature metrology |
JP7088937B2 (ja) | 2016-12-30 | 2022-06-21 | イノビュージョン インコーポレイテッド | 多波長ライダー設計 |
US10175555B2 (en) | 2017-01-03 | 2019-01-08 | KLA—Tencor Corporation | 183 nm CW laser and inspection system |
US10551320B2 (en) * | 2017-01-30 | 2020-02-04 | Kla-Tencor Corporation | Activation of wafer particle defects for spectroscopic composition analysis |
DE102017212465A1 (de) | 2017-07-20 | 2017-09-14 | Carl Zeiss Smt Gmbh | Messsystem und Messverfahren für fotolithographische Anwendungen |
RU2664758C1 (ru) * | 2017-08-14 | 2018-08-22 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") | Способ стабилизации длины волны узкополосного волоконного лазера и устройство для его осуществления |
US10409139B2 (en) | 2017-09-21 | 2019-09-10 | Qioptiq Photonics Gmbh & Co. Kg | Light source with multi-longitudinal mode continuous wave output based on multi-mode resonant OPO technology |
US10756505B2 (en) | 2017-09-21 | 2020-08-25 | Qioptiq Photonics Gmbh & Co. Kg | Tunable light source with broadband output |
WO2019164961A1 (en) | 2018-02-21 | 2019-08-29 | Innovusion Ireland Limited | Lidar systems with fiber optic coupling |
WO2019165130A1 (en) | 2018-02-21 | 2019-08-29 | Innovusion Ireland Limited | Lidar detection systems and methods with high repetition rate to observe far objects |
US11422234B2 (en) * | 2018-02-23 | 2022-08-23 | Innovusion, Inc. | Distributed lidar systems |
US11114489B2 (en) | 2018-06-18 | 2021-09-07 | Kla-Tencor Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
US11557872B2 (en) * | 2018-08-20 | 2023-01-17 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Multi-wavelength sources based on parametric amplification |
US11579300B1 (en) | 2018-08-21 | 2023-02-14 | Innovusion, Inc. | Dual lens receive path for LiDAR system |
US10943760B2 (en) | 2018-10-12 | 2021-03-09 | Kla Corporation | Electron gun and electron microscope |
US11114491B2 (en) | 2018-12-12 | 2021-09-07 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
CN112011464B (zh) * | 2019-05-31 | 2021-12-28 | 浙江华睿生物技术有限公司 | 一种用于生产麦角硫因的里氏木霉 |
US11848350B2 (en) | 2020-04-08 | 2023-12-19 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer |
CN111458951B (zh) * | 2020-04-14 | 2022-03-01 | 中国地质大学(北京) | 一种深紫外激光输出技术的复合晶体装置 |
US20220399694A1 (en) | 2021-06-11 | 2022-12-15 | Kla Corporation | Tunable duv laser assembly |
KR20230018767A (ko) * | 2021-07-30 | 2023-02-07 | 삼성전자주식회사 | 기판 검사 방법 및 장치 |
US20230155341A1 (en) | 2021-11-16 | 2023-05-18 | Taiwan Semiconductor Manufacturing Company Limited | Laser device and method of using the same |
US11899338B2 (en) * | 2021-12-11 | 2024-02-13 | Kla Corporation | Deep ultraviolet laser using strontium tetraborate for frequency conversion |
Family Cites Families (194)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3755704A (en) | 1970-02-06 | 1973-08-28 | Stanford Research Inst | Field emission cathode structures and devices utilizing such structures |
US4178561A (en) | 1978-10-02 | 1979-12-11 | Hughes Aircraft Company | Scanning arrangements for optical frequency converters |
JPS58146B2 (ja) | 1980-10-14 | 1983-01-05 | 浜松テレビ株式会社 | フレ−ミング管 |
US4644221A (en) | 1981-05-06 | 1987-02-17 | The United States Of America As Represented By The Secretary Of The Army | Variable sensitivity transmission mode negative electron affinity photocathode |
JPS63185084A (ja) * | 1987-01-28 | 1988-07-30 | Hamamatsu Photonics Kk | 光波長可変レ−ザ装置 |
US4853595A (en) | 1987-08-31 | 1989-08-01 | Alfano Robert R | Photomultiplier tube having a transmission strip line photocathode and system for use therewith |
CN1021269C (zh) | 1990-10-11 | 1993-06-16 | 中国科学院上海光学精密机械研究所 | 内腔式高次谐波激光器 |
US5120949A (en) | 1991-01-17 | 1992-06-09 | Burle Technologies, Inc. | Semiconductor anode photomultiplier tube |
JP2828221B2 (ja) | 1991-06-04 | 1998-11-25 | インターナショナル・ビジネス・マシーンズ・コーポレイション | レーザー光波長変換装置 |
US5144630A (en) | 1991-07-29 | 1992-09-01 | Jtt International, Inc. | Multiwavelength solid state laser using frequency conversion techniques |
EP0532927B1 (en) | 1991-08-22 | 1996-02-21 | Kla Instruments Corporation | Automated photomask inspection apparatus |
US5563702A (en) | 1991-08-22 | 1996-10-08 | Kla Instruments Corporation | Automated photomask inspection apparatus and method |
DE69208413T2 (de) | 1991-08-22 | 1996-11-14 | Kla Instr Corp | Gerät zur automatischen Prüfung von Photomaske |
US5475227A (en) | 1992-12-17 | 1995-12-12 | Intevac, Inc. | Hybrid photomultiplier tube with ion deflector |
US5326978A (en) | 1992-12-17 | 1994-07-05 | Intevac, Inc. | Focused electron-bombarded detector |
US5760809A (en) | 1993-03-19 | 1998-06-02 | Xerox Corporation | Recording sheets containing phosphonium compounds |
FI940740A0 (fi) | 1994-02-17 | 1994-02-17 | Arto Salokatve | Detektor foer paovisning av fotoner eller partiklar, foerfarande foer framstaellning av detektorn och maetningsfoerfarande |
US6271916B1 (en) | 1994-03-24 | 2001-08-07 | Kla-Tencor Corporation | Process and assembly for non-destructive surface inspections |
US5493176A (en) | 1994-05-23 | 1996-02-20 | Siemens Medical Systems, Inc. | Photomultiplier tube with an avalanche photodiode, a flat input end and conductors which simulate the potential distribution in a photomultiplier tube having a spherical-type input end |
JPH08241977A (ja) | 1995-03-03 | 1996-09-17 | Hamamatsu Photonics Kk | 半導体装置の製造方法 |
US6512631B2 (en) | 1996-07-22 | 2003-01-28 | Kla-Tencor Corporation | Broad-band deep ultraviolet/vacuum ultraviolet catadioptric imaging system |
WO1997046865A1 (en) | 1996-06-04 | 1997-12-11 | Tencor Instruments | Optical scanning system for surface inspection |
US5999310A (en) | 1996-07-22 | 1999-12-07 | Shafer; David Ross | Ultra-broadband UV microscope imaging system with wide range zoom capability |
US5742626A (en) | 1996-08-14 | 1998-04-21 | Aculight Corporation | Ultraviolet solid state laser, method of using same and laser surgery apparatus |
US5760899A (en) | 1996-09-04 | 1998-06-02 | Erim International, Inc. | High-sensitivity multispectral sensor |
US6201257B1 (en) | 1996-10-10 | 2001-03-13 | Advanced Scientific Concepts, Inc. | Semiconductor X-ray photocathodes devices |
US6212310B1 (en) | 1996-10-22 | 2001-04-03 | Sdl, Inc. | High power fiber gain media system achieved through power scaling via multiplexing |
US6064759A (en) | 1996-11-08 | 2000-05-16 | Buckley; B. Shawn | Computer aided inspection machine |
EP2648039A3 (en) | 1997-03-21 | 2014-07-09 | Imra America, Inc. | High energy optical fiber amplifier for picosecond-nanosecond pulses for advanced material processing applications |
US6608676B1 (en) | 1997-08-01 | 2003-08-19 | Kla-Tencor Corporation | System for detecting anomalies and/or features of a surface |
US5825562A (en) | 1997-08-18 | 1998-10-20 | Novatec Corporation | Method of continuous motion for prolong usage of optical elements under the irradiation of intensive laser beams |
EP1070982A4 (en) | 1997-09-17 | 2003-05-21 | Ushio Electric Inc | LIGHT SOURCE |
US6201601B1 (en) | 1997-09-19 | 2001-03-13 | Kla-Tencor Corporation | Sample inspection system |
JPH11121854A (ja) | 1997-10-16 | 1999-04-30 | Ushio Sogo Gijutsu Kenkyusho:Kk | 光源装置 |
EP1063742A4 (en) | 1998-03-11 | 2005-04-20 | Nikon Corp | ULTRAVIOLET LASER DEVICE AND EXPOSURE APPARATUS COMPRISING SUCH A ULTRAVIOLET LASER DEVICE |
JP3997450B2 (ja) | 1998-03-13 | 2007-10-24 | ソニー株式会社 | 波長変換装置 |
US6376985B2 (en) | 1998-03-31 | 2002-04-23 | Applied Materials, Inc. | Gated photocathode for controlled single and multiple electron beam emission |
US6373869B1 (en) | 1998-07-30 | 2002-04-16 | Actinix | System and method for generating coherent radiation at ultraviolet wavelengths |
JP2000223408A (ja) | 1999-02-03 | 2000-08-11 | Hitachi Ltd | 半導体製造装置および半導体装置の製造方法 |
US6535531B1 (en) | 2001-11-29 | 2003-03-18 | Cymer, Inc. | Gas discharge laser with pulse multiplier |
US6888855B1 (en) | 1999-06-11 | 2005-05-03 | Daniel Kopf | Optical system for lasers |
ATE246367T1 (de) | 1999-06-11 | 2003-08-15 | Daniel Dr Kopf | Laser-generatorsystem |
US6285018B1 (en) | 1999-07-20 | 2001-09-04 | Intevac, Inc. | Electron bombarded active pixel sensor |
JP2001042369A (ja) | 1999-07-27 | 2001-02-16 | Ushio Sogo Gijutsu Kenkyusho:Kk | 波長変換ユニット |
US6498801B1 (en) | 1999-08-05 | 2002-12-24 | Alexander E. Dudelzak | Solid state laser for microlithography |
US7136402B1 (en) | 1999-09-10 | 2006-11-14 | Nikon Corporation | Laser device and exposure method |
AU6865300A (en) | 1999-09-10 | 2001-04-17 | Nikon Corporation | Light source and wavelength stabilization control method, exposure apparatus andexposure method, method for producing exposure apparatus, and device manufactur ing method and device |
US6369888B1 (en) | 1999-11-17 | 2002-04-09 | Applied Materials, Inc. | Method and apparatus for article inspection including speckle reduction |
US7838794B2 (en) | 1999-12-28 | 2010-11-23 | Gsi Group Corporation | Laser-based method and system for removing one or more target link structures |
US6549647B1 (en) | 2000-01-07 | 2003-04-15 | Cyberoptics Corporation | Inspection system with vibration resistant video capture |
JP2002033473A (ja) | 2000-07-17 | 2002-01-31 | Hamamatsu Photonics Kk | 半導体装置 |
US6879390B1 (en) | 2000-08-10 | 2005-04-12 | Kla-Tencor Technologies Corporation | Multiple beam inspection apparatus and method |
JP2002055368A (ja) | 2000-08-11 | 2002-02-20 | Takano Co Ltd | 波長変換レーザ装置 |
US20020105995A1 (en) | 2000-11-16 | 2002-08-08 | Lambda Physik Ag | Molecular fluorine laser with single spectral line and polarized output |
US7184616B2 (en) | 2000-11-20 | 2007-02-27 | Aculight Corporation | Method and apparatus for fiber Bragg grating production |
US6704339B2 (en) | 2001-01-29 | 2004-03-09 | Cymer, Inc. | Lithography laser with beam delivery and beam pointing control |
US8208505B2 (en) | 2001-01-30 | 2012-06-26 | Board Of Trustees Of Michigan State University | Laser system employing harmonic generation |
US6791099B2 (en) | 2001-02-14 | 2004-09-14 | Applied Materials, Inc. | Laser scanning wafer inspection using nonlinear optical phenomena |
JP3939928B2 (ja) | 2001-02-28 | 2007-07-04 | サイバーレーザー株式会社 | 波長変換装置 |
US6667828B2 (en) * | 2001-07-13 | 2003-12-23 | Zygo Corporation | Apparatus and method using a nonlinear optical crystal |
JP2003043533A (ja) | 2001-08-03 | 2003-02-13 | Kitakyushu Foundation For The Advancement Of Industry Science & Technology | レーザーの第二高調波の方向を一定に保つための自動追尾装置 |
US20030161374A1 (en) | 2001-11-21 | 2003-08-28 | Lambda Physik Ag | High-resolution confocal Fabry-Perot interferometer for absolute spectral parameter detection of excimer laser used in lithography applications |
US6816520B1 (en) | 2001-11-30 | 2004-11-09 | Positive Light | Solid state system and method for generating ultraviolet light |
US7088443B2 (en) | 2002-02-11 | 2006-08-08 | Kla-Tencor Technologies Corporation | System for detecting anomalies and/or features of a surface |
US6859335B1 (en) | 2002-11-20 | 2005-02-22 | Ming Lai | Method of programmed displacement for prolong usage of optical elements under the irradiation of intensive laser beams |
US7957066B2 (en) | 2003-02-21 | 2011-06-07 | Kla-Tencor Corporation | Split field inspection system using small catadioptric objectives |
EP1666520B1 (en) | 2003-09-11 | 2013-11-13 | Nikon Corporation | A macromolecular crystral working apparatus ; A macromolecular crystal evaluating device with such apparatus |
US7463657B2 (en) | 2003-10-09 | 2008-12-09 | Coherent, Inc. | Intracavity frequency-tripled CW laser |
US7813406B1 (en) | 2003-10-15 | 2010-10-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Temporal laser pulse manipulation using multiple optical ring-cavities |
JP2005156516A (ja) | 2003-11-05 | 2005-06-16 | Hitachi Ltd | パターン欠陥検査方法及びその装置 |
US7304310B1 (en) * | 2003-11-21 | 2007-12-04 | Kla-Tencor Technologies Corp. | Methods and systems for inspecting a specimen using light scattered in different wavelength ranges |
US7023126B2 (en) | 2003-12-03 | 2006-04-04 | Itt Manufacturing Enterprises Inc. | Surface structures for halo reduction in electron bombarded devices |
US7321468B2 (en) | 2003-12-15 | 2008-01-22 | Carl Zeiss Laser Optics Gmbh | Method and optical arrangement for beam guiding of a light beam with beam delay |
CN1926728A (zh) | 2004-01-07 | 2007-03-07 | 光谱物理学公司 | 工业用直接二极管泵浦超快速放大器系统 |
US7313155B1 (en) | 2004-02-12 | 2007-12-25 | Liyue Mu | High power Q-switched laser for soft tissue ablation |
US7035012B2 (en) | 2004-03-01 | 2006-04-25 | Coherent, Inc. | Optical pulse duration extender |
WO2005085947A1 (ja) | 2004-03-08 | 2005-09-15 | Nikon Corporation | レーザ光源装置、このレーザ光源装置を用いた露光装置及びマスク検査装置 |
JP2005275095A (ja) | 2004-03-25 | 2005-10-06 | Nikon Corp | 光源装置、半導体露光装置、レーザー治療装置、レーザー干渉計装置およびレーザー顕微鏡装置 |
JP4365255B2 (ja) | 2004-04-08 | 2009-11-18 | 浜松ホトニクス株式会社 | 発光体と、これを用いた電子線検出器、走査型電子顕微鏡及び質量分析装置 |
US20050254065A1 (en) | 2004-05-12 | 2005-11-17 | Stokowski Stanley E | Method and apparatus for detecting surface characteristics on a mask blank |
US7349079B2 (en) | 2004-05-14 | 2008-03-25 | Kla-Tencor Technologies Corp. | Methods for measurement or analysis of a nitrogen concentration of a specimen |
EP1750172B1 (en) | 2004-05-26 | 2013-04-24 | Nikon Corporation | Wavelength converting optical system |
JP2006060162A (ja) | 2004-08-24 | 2006-03-02 | Nikon Corp | レーザ光源装置の励起光の制御方法及びレーザ光源装置 |
US7627007B1 (en) | 2004-08-25 | 2009-12-01 | Kla-Tencor Technologies Corporation | Non-critical phase matching in CLBO to generate sub-213nm wavelengths |
JP4500641B2 (ja) | 2004-09-29 | 2010-07-14 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法およびその装置 |
US7609309B2 (en) | 2004-11-18 | 2009-10-27 | Kla-Tencor Technologies Corporation | Continuous clocking of TDI sensors |
US7952633B2 (en) | 2004-11-18 | 2011-05-31 | Kla-Tencor Technologies Corporation | Apparatus for continuous clocking of TDI sensors |
US7432517B2 (en) | 2004-11-19 | 2008-10-07 | Asml Netherlands B.V. | Pulse modifier, lithographic apparatus, and device manufacturing method |
JP2006250845A (ja) | 2005-03-14 | 2006-09-21 | Topcon Corp | パターン欠陥検査方法とその装置 |
US7593440B2 (en) | 2005-03-29 | 2009-09-22 | Coherent, Inc. | MOPA laser apparatus with two master oscillators for generating ultraviolet radiation |
EP1716964B1 (en) | 2005-04-28 | 2009-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device and laser irradiation apparatus |
US7345825B2 (en) | 2005-06-30 | 2008-03-18 | Kla-Tencor Technologies Corporation | Beam delivery system for laser dark-field illumination in a catadioptric optical system |
JP4640029B2 (ja) | 2005-08-08 | 2011-03-02 | 株式会社ニコン | 波長変換光学系、レーザ光源、露光装置、被検物検査装置、及び高分子結晶の加工装置 |
US7535938B2 (en) | 2005-08-15 | 2009-05-19 | Pavilion Integration Corporation | Low-noise monolithic microchip lasers capable of producing wavelengths ranging from IR to UV based on efficient and cost-effective frequency conversion |
JP4142734B2 (ja) | 2005-09-16 | 2008-09-03 | 松下電器産業株式会社 | 回折光学素子 |
JP4925085B2 (ja) | 2005-09-20 | 2012-04-25 | 株式会社メガオプト | 深紫外レーザー光の発生方法および深紫外レーザー装置 |
JP4939033B2 (ja) | 2005-10-31 | 2012-05-23 | 浜松ホトニクス株式会社 | 光電陰極 |
WO2007053335A2 (en) | 2005-11-01 | 2007-05-10 | Cymer, Inc. | Laser system |
US20090296755A1 (en) | 2005-11-01 | 2009-12-03 | Cymer, Inc. | Laser system |
US7920616B2 (en) | 2005-11-01 | 2011-04-05 | Cymer, Inc. | Laser system |
US7643529B2 (en) | 2005-11-01 | 2010-01-05 | Cymer, Inc. | Laser system |
US7715459B2 (en) | 2005-11-01 | 2010-05-11 | Cymer, Inc. | Laser system |
JP2007133102A (ja) | 2005-11-09 | 2007-05-31 | Canon Inc | 反射防止膜を有する光学素子及びそれを有する露光装置 |
US7471705B2 (en) | 2005-11-09 | 2008-12-30 | Lockheed Martin Corporation | Ultraviolet laser system and method having wavelength in the 200-nm range |
US7519253B2 (en) | 2005-11-18 | 2009-04-14 | Omni Sciences, Inc. | Broadband or mid-infrared fiber light sources |
US7528943B2 (en) * | 2005-12-27 | 2009-05-05 | Kla-Tencor Technologies Corporation | Method and apparatus for simultaneous high-speed acquisition of multiple images |
JP2007206452A (ja) | 2006-02-02 | 2007-08-16 | Lasertec Corp | 深紫外光源及び、その深紫外光源を用いたマスク検査装置及び露光装置 |
JP4911494B2 (ja) | 2006-03-18 | 2012-04-04 | 国立大学法人大阪大学 | 波長変換光学素子、波長変換光学素子の製造方法、波長変換装置、紫外線レーザ照射装置およびレーザ加工装置 |
JP5269764B2 (ja) * | 2006-04-28 | 2013-08-21 | コーニング インコーポレイテッド | パルス動作uv及び可視ラマンレーザシステム |
US7113325B1 (en) | 2006-05-03 | 2006-09-26 | Mitsubishi Materials Corporation | Wavelength conversion method with improved conversion efficiency |
US7593437B2 (en) | 2006-05-15 | 2009-09-22 | Coherent, Inc. | MOPA laser apparatus with two master oscillators for generating ultraviolet radiation |
US20070263680A1 (en) | 2006-05-15 | 2007-11-15 | Andrei Starodoumov | MOPA laser apparatus with two master oscillators for generating ultraviolet radiation |
WO2007142988A2 (en) | 2006-06-02 | 2007-12-13 | Corning Incorporated | Uv and visible laser systems |
US7457330B2 (en) | 2006-06-15 | 2008-11-25 | Pavilion Integration Corporation | Low speckle noise monolithic microchip RGB lasers |
US7970201B2 (en) | 2006-07-31 | 2011-06-28 | Applied Materials Israel, Ltd. | Method and system for defect detection |
DE102007004235B3 (de) | 2006-12-21 | 2008-01-03 | Coherent Gmbh | Verfahren zur Frequenzkonversion eines Lichtstrahls mittels eines CLBO-Kristalls |
JP5342769B2 (ja) | 2006-12-28 | 2013-11-13 | 浜松ホトニクス株式会社 | 光電陰極、電子管及び光電子増倍管 |
US20080173903A1 (en) | 2006-12-28 | 2008-07-24 | Fujifilm Corporation | Solid-state image pickup element |
CN107059116B (zh) | 2007-01-17 | 2019-12-31 | 晶体公司 | 引晶的氮化铝晶体生长中的缺陷减少 |
US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
JP4224863B2 (ja) | 2007-02-02 | 2009-02-18 | レーザーテック株式会社 | 検査装置及び検査方法、並びにパターン基板の製造方法 |
JP2008209664A (ja) | 2007-02-27 | 2008-09-11 | Advanced Mask Inspection Technology Kk | パターン検査装置 |
JP2008261790A (ja) | 2007-04-13 | 2008-10-30 | Hitachi High-Technologies Corp | 欠陥検査装置 |
US8755417B1 (en) | 2007-04-16 | 2014-06-17 | Kla-Tencor Corporation | Coherent light generation below about two-hundred nanometers |
KR100809271B1 (ko) * | 2007-04-17 | 2008-02-29 | 삼성전기주식회사 | 파장가변 레이저 장치 |
US20110073982A1 (en) | 2007-05-25 | 2011-03-31 | Armstrong J Joseph | Inspection system using back side illuminated linear sensor |
US7586108B2 (en) | 2007-06-25 | 2009-09-08 | Asml Netherlands B.V. | Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector |
JP2009058782A (ja) | 2007-08-31 | 2009-03-19 | Osaka Univ | レーザ光発生装置およびレーザ光発生方法 |
US7999342B2 (en) | 2007-09-24 | 2011-08-16 | Taiwan Semiconductor Manufacturing Company, Ltd | Image sensor element for backside-illuminated sensor |
JP4634427B2 (ja) | 2007-09-27 | 2011-02-16 | 株式会社東芝 | 照明装置及びパターン検査装置 |
US7525649B1 (en) | 2007-10-19 | 2009-04-28 | Kla-Tencor Technologies Corporation | Surface inspection system using laser line illumination with two dimensional imaging |
US7605376B2 (en) | 2007-10-29 | 2009-10-20 | Fairchild Imaging, Inc. | CMOS sensor adapted for dental x-ray imaging |
US8298335B2 (en) | 2007-12-18 | 2012-10-30 | Kla-Tencor Technologies Corporation | Enclosure for controlling the environment of optical crystals |
JP2009145791A (ja) | 2007-12-18 | 2009-07-02 | Lasertec Corp | 波長変換装置、検査装置及び波長変換方法 |
US7885298B2 (en) | 2008-01-16 | 2011-02-08 | Deep Photonics Corporation | Method and apparatus for producing arbitrary pulsetrains from a harmonic fiber laser |
JP2010003755A (ja) | 2008-06-18 | 2010-01-07 | Mitsubishi Electric Corp | 波長変換レーザ装置 |
JP2010008574A (ja) * | 2008-06-25 | 2010-01-14 | Sumitomo Metal Mining Co Ltd | 光パラメトリック発振波長変換装置 |
JP2010054547A (ja) | 2008-08-26 | 2010-03-11 | Lasertec Corp | 紫外レーザ装置 |
US9080990B2 (en) | 2008-09-29 | 2015-07-14 | Kla-Tencor Corp. | Illumination subsystems of a metrology system, metrology systems, and methods for illuminating a specimen for metrology measurements |
US9080991B2 (en) | 2008-09-29 | 2015-07-14 | Kla-Tencor Corp. | Illuminating a specimen for metrology or inspection |
US7875948B2 (en) | 2008-10-21 | 2011-01-25 | Jaroslav Hynecek | Backside illuminated image sensor |
FR2938935B1 (fr) | 2008-11-21 | 2011-05-06 | Eolite Systems | Dispositif d'allongement de la duree de vie d'un systeme optique non lineaire soumis au rayonnement d'un faisceau laser intense et source optique non lineaire comprenant ce dispositif |
US8146498B2 (en) | 2008-12-03 | 2012-04-03 | Eastman Kodak Company | Printing plate registration |
US8624971B2 (en) | 2009-01-23 | 2014-01-07 | Kla-Tencor Corporation | TDI sensor modules with localized driving and signal processing circuitry for high speed inspection |
JP5237874B2 (ja) | 2009-04-24 | 2013-07-17 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法および欠陥検査装置 |
JP4565207B1 (ja) | 2009-04-28 | 2010-10-20 | レーザーテック株式会社 | 波長変換装置及び波長変換方法並びに半導体装置の製造方法 |
US20100301437A1 (en) | 2009-06-01 | 2010-12-02 | Kla-Tencor Corporation | Anti-Reflective Coating For Sensors Suitable For High Throughput Inspection Systems |
JP2011023532A (ja) | 2009-07-15 | 2011-02-03 | Nikon Corp | 光増幅器、レーザ装置及び光源装置 |
US9023152B2 (en) | 2009-09-17 | 2015-05-05 | Kla-Tencor Corporation | CLBO crystal growth |
CN102035085B (zh) | 2009-10-08 | 2014-03-05 | 群康科技(深圳)有限公司 | 导电结构及其制造方法 |
WO2011046780A1 (en) | 2009-10-13 | 2011-04-21 | Nanda Nathan | Pulsed high-power laser apparatus and methods |
US8629384B1 (en) | 2009-10-26 | 2014-01-14 | Kla-Tencor Corporation | Photomultiplier tube optimized for surface inspection in the ultraviolet |
CN101702490B (zh) | 2009-10-29 | 2011-02-09 | 长春理工大学 | 一种采用阱中量子点(dwell)的中红外锑化物激光器结构 |
US20110134944A1 (en) | 2009-12-08 | 2011-06-09 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Efficient pulse laser light generation and devices using the same |
JP2011128330A (ja) | 2009-12-17 | 2011-06-30 | Nikon Corp | レーザ装置 |
JP4590578B1 (ja) | 2010-04-01 | 2010-12-01 | レーザーテック株式会社 | 光源装置、マスク検査装置、及びコヒーレント光発生方法 |
WO2011148895A1 (ja) | 2010-05-24 | 2011-12-01 | ギガフォトン株式会社 | 固体レーザ装置およびレーザシステム |
EP2601714A4 (en) | 2010-08-08 | 2014-12-17 | Kla Tencor Corp | DYNAMIC WAVE FRONT CONTROL OF A LASER SYSTEM WITH FREQUENCY CONVERSION |
US8482846B2 (en) | 2010-08-09 | 2013-07-09 | Coherent Gmbh | Advanced shifting algorithm for prolonging the life of an optically nonlinear crystal |
US8824514B2 (en) | 2010-11-09 | 2014-09-02 | Kla-Tencor Corporation | Measuring crystal site lifetime in a non-linear optical crystal |
US8711470B2 (en) | 2010-11-14 | 2014-04-29 | Kla-Tencor Corporation | High damage threshold frequency conversion system |
SG190678A1 (en) | 2010-12-16 | 2013-07-31 | Kla Tencor Corp | Wafer inspection |
US8669512B2 (en) | 2010-12-28 | 2014-03-11 | Technion Research & Development Foundation Limited | System and method for analyzing light by three-photon counting |
WO2012154468A2 (en) | 2011-05-06 | 2012-11-15 | Kla-Tencor Corporation | Deep ultra-violet light sources for wafer and reticle inspection systems |
US9793673B2 (en) | 2011-06-13 | 2017-10-17 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
WO2013006867A1 (en) | 2011-07-07 | 2013-01-10 | Massachussetts Institute Of Technology | Methods and apparatus for ultrathin catalyst layer for photoelectrode |
JP5731444B2 (ja) | 2011-07-07 | 2015-06-10 | 富士フイルム株式会社 | 放射線検出器、放射線画像撮影装置、及び放射線画像撮影システム |
US9279774B2 (en) | 2011-07-12 | 2016-03-08 | Kla-Tencor Corp. | Wafer inspection |
ITTO20110649A1 (it) | 2011-07-19 | 2013-01-20 | St Microelectronics Srl | Dispositivo di fotorivelazione con copertura protettiva e antiriflesso, e relativo metodo di fabbricazione |
US8873596B2 (en) | 2011-07-22 | 2014-10-28 | Kla-Tencor Corporation | Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal |
US8817827B2 (en) | 2011-08-17 | 2014-08-26 | Veralas, Inc. | Ultraviolet fiber laser system |
WO2013036576A1 (en) | 2011-09-07 | 2013-03-14 | Kla-Tencor Corporation | Transmissive-reflective photocathode |
US8748828B2 (en) | 2011-09-21 | 2014-06-10 | Kla-Tencor Corporation | Interposer based imaging sensor for high-speed image acquisition and inspection systems |
US20130077086A1 (en) | 2011-09-23 | 2013-03-28 | Kla-Tencor Corporation | Solid-State Laser And Inspection System Using 193nm Laser |
US8872159B2 (en) | 2011-09-29 | 2014-10-28 | The United States Of America, As Represented By The Secretary Of The Navy | Graphene on semiconductor detector |
US9250178B2 (en) | 2011-10-07 | 2016-02-02 | Kla-Tencor Corporation | Passivation of nonlinear optical crystals |
US9389166B2 (en) | 2011-12-16 | 2016-07-12 | Kla-Tencor Corporation | Enhanced high-speed logarithmic photo-detector for spot scanning system |
US8754972B2 (en) | 2012-02-01 | 2014-06-17 | Kla-Tencor Corporation | Integrated multi-channel analog front end and digitizer for high speed imaging applications |
US9496425B2 (en) | 2012-04-10 | 2016-11-15 | Kla-Tencor Corporation | Back-illuminated sensor with boron layer |
US20130313440A1 (en) | 2012-05-22 | 2013-11-28 | Kla-Tencor Corporation | Solid-State Laser And Inspection System Using 193nm Laser |
US8953869B2 (en) | 2012-06-14 | 2015-02-10 | Kla-Tencor Corporation | Apparatus and methods for inspecting extreme ultra violet reticles |
US8964798B2 (en) | 2012-07-12 | 2015-02-24 | Kla-Tencor Corporation | Reducing the spectral bandwidth of lasers |
US9601299B2 (en) | 2012-08-03 | 2017-03-21 | Kla-Tencor Corporation | Photocathode including silicon substrate with boron layer |
US9042006B2 (en) | 2012-09-11 | 2015-05-26 | Kla-Tencor Corporation | Solid state illumination source and inspection system |
NL2011568A (en) | 2012-10-31 | 2014-05-06 | Asml Netherlands Bv | Sensor and lithographic apparatus. |
US9151940B2 (en) | 2012-12-05 | 2015-10-06 | Kla-Tencor Corporation | Semiconductor inspection and metrology system using laser pulse multiplier |
US9426400B2 (en) | 2012-12-10 | 2016-08-23 | Kla-Tencor Corporation | Method and apparatus for high speed acquisition of moving images using pulsed illumination |
US8929406B2 (en) | 2013-01-24 | 2015-01-06 | Kla-Tencor Corporation | 193NM laser and inspection system |
US9529182B2 (en) | 2013-02-13 | 2016-12-27 | KLA—Tencor Corporation | 193nm laser and inspection system |
US9608399B2 (en) | 2013-03-18 | 2017-03-28 | Kla-Tencor Corporation | 193 nm laser and an inspection system using a 193 nm laser |
US9478402B2 (en) | 2013-04-01 | 2016-10-25 | Kla-Tencor Corporation | Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor |
US11180866B2 (en) | 2013-04-10 | 2021-11-23 | Kla Corporation | Passivation of nonlinear optical crystals |
US9347890B2 (en) | 2013-12-19 | 2016-05-24 | Kla-Tencor Corporation | Low-noise sensor and an inspection system using a low-noise sensor |
US9748294B2 (en) | 2014-01-10 | 2017-08-29 | Hamamatsu Photonics K.K. | Anti-reflection layer for back-illuminated sensor |
-
2014
- 2014-01-31 US US14/170,384 patent/US9529182B2/en active Active
- 2014-02-13 KR KR1020207026017A patent/KR102309984B1/ko active IP Right Grant
- 2014-02-13 TW TW106141017A patent/TWI632752B/zh active
- 2014-02-13 KR KR1020197031211A patent/KR102157013B1/ko active IP Right Grant
- 2014-02-13 TW TW103104792A patent/TWI612745B/zh active
- 2014-02-13 WO PCT/US2014/016198 patent/WO2014127100A1/en active Application Filing
- 2014-02-13 JP JP2015558125A patent/JP2016508627A/ja active Pending
- 2014-02-13 KR KR1020157024509A patent/KR102038737B1/ko active IP Right Grant
-
2016
- 2016-11-04 US US15/344,383 patent/US9935421B2/en active Active
-
2018
- 2018-02-21 US US15/901,388 patent/US10439355B2/en active Active
-
2019
- 2019-01-17 JP JP2019006089A patent/JP6626997B2/ja active Active
- 2019-12-02 JP JP2019218274A patent/JP6954980B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR102038737B1 (ko) | 2019-11-26 |
US9935421B2 (en) | 2018-04-03 |
TW201813225A (zh) | 2018-04-01 |
KR102309984B1 (ko) | 2021-10-08 |
KR102157013B1 (ko) | 2020-09-16 |
JP2020065056A (ja) | 2020-04-23 |
JP6954980B2 (ja) | 2021-10-27 |
WO2014127100A1 (en) | 2014-08-21 |
US20140226140A1 (en) | 2014-08-14 |
US20180191126A1 (en) | 2018-07-05 |
US20170063026A1 (en) | 2017-03-02 |
US9529182B2 (en) | 2016-12-27 |
KR20190122892A (ko) | 2019-10-30 |
KR20150119040A (ko) | 2015-10-23 |
TWI612745B (zh) | 2018-01-21 |
JP2016508627A (ja) | 2016-03-22 |
KR20200110453A (ko) | 2020-09-23 |
TWI632752B (zh) | 2018-08-11 |
TW201444209A (zh) | 2014-11-16 |
US10439355B2 (en) | 2019-10-08 |
JP2019082716A (ja) | 2019-05-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6626997B2 (ja) | 検査システム | |
US10199149B2 (en) | 183NM laser and inspection system | |
US9318869B2 (en) | 193nm laser and inspection system | |
TWI692914B (zh) | 使用193奈米雷射之固態雷射及檢測系統 | |
CN110352538B (zh) | 183nm cw激光器及检验系统 | |
US20130077086A1 (en) | Solid-State Laser And Inspection System Using 193nm Laser |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190117 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20191018 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191105 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191202 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6626997 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |