JP6625835B2 - 表示装置 - Google Patents
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- JP6625835B2 JP6625835B2 JP2015127297A JP2015127297A JP6625835B2 JP 6625835 B2 JP6625835 B2 JP 6625835B2 JP 2015127297 A JP2015127297 A JP 2015127297A JP 2015127297 A JP2015127297 A JP 2015127297A JP 6625835 B2 JP6625835 B2 JP 6625835B2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
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- 239000003822 epoxy resin Substances 0.000 description 2
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- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017105 AlOxNy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
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- 239000003990 capacitor Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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- 229920002050 silicone resin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Optical Filters (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
図5に本発明の一実施形態における画素の開口形状を示す。図5は開口部142、コンタクトホール138の場所と形状を示したものであるが、あくまで模式図であり、実際にはコンタクトホールが露出しているわけではない。図5に示した遮光層136が有する開口部142の形状は、略四角形の形状をしている。
図6に本発明の一実施形態における画素の開口形状を示す。本実施例は、開口部142、コンタクトホール138に加えて、絶縁層開口部140を設けたものである。
本発明の一実施形態に係る表示装置の画素の配列を、図8を示して説明する。本実施形態において、開口部142の形状は、画素108を3か所開口する形状としたものである。この場合も、第1の方向に隣り合う画素の開口部の中心を結ぶ線、第1の方向に隣り合う画素のコンタクトホールの中心を結ぶ線は、いずれも、第1の方向と略平行である。同様に、第2の方向に隣り合う画素の開口部の中心を結ぶ線、第2の方向に隣り合う画素のコンタクトホールの中心を結ぶ線は、いずれも、第2の方向と略平行である。
また、画素の配列例3において、絶縁層開口部140を設けることも可能である。この場合には、図9に示すように、隣接する画素144間に設けることが可能である。
102、104:基板
106:表示領域
108:画素
110:シール材
112:ドライバ回路
114:端子領域
116:接続端子
117:選択トランジスタ
118:駆動トランジスタ
120:発光素子
122:カラーフィルタ
124:個別画素電極
126:共通画素電極
128:有機層
130:バンク
132:封止膜
131:絶縁層
134:充填材
136:遮光層(BM)
138:コンタクトホール
140:絶縁層開口部
142:開口部
144:サブピクセル
151:ゲート信号線
152:容量素子
153:データ信号線
154:電極線
Claims (5)
- 複数の画素が第1の方向と、前記第1の方向と交差する第2の方向とに、行列状に配置された表示領域を有する表示装置であって、
前記複数の画素はそれぞれ、
少なくとも一つのトランジスタと、
前記トランジスタ上に、絶縁層を介して設けられた画素電極と、
前記トランジスタを覆うと共に、前記トランジスタと前記画素電極との間に設けられた平坦化膜と、
前記平坦化膜と前記画素電極との間に設けられた絶縁膜と、
前記トランジスタのソース電極又はドレイン電極と、前記画素電極との接続箇所に設けられたコンタクトホールと、
前記画素電極上に、前記画素電極の端部と前記コンタクトホールとを覆うように設けられたバンクと、
前記画素電極の一部を露出するように、前記バンクに形成された第2開口部と、を有し、
隣接する前記画素の所定方向の境界に、前記平坦化膜の一部を露出するように、前記絶縁膜に形成された第1開口部が設けられており、
前記平坦化膜と前記バンクとは、前記第1開口部を介して互いに接しており、
前記第1開口部は、前記第1の方向又は前記第2の方向のいずれか一に沿って平行移動した軌跡が前記コンタクトホール上を通り、かつ前記第1の方向又は前記第2の方向の他の一に沿って平行移動した軌跡が前記コンタクトホール上を通らず、前記第2開口部上を通る平面形状を有することを特徴とする表示装置。 - 前記第1開口部は、その開口端に少なくとも一の直線部分を有し、
前記第1開口部の直線部分は、前記第1の方向及び前記第2の方向のいずれとも交わる方向に延在することを特徴とする、請求項1に記載の表示装置。 - 前記第2開口部は、その開口端に少なくとも一の直線部分を有し、
前記第2開口部の直線部分は、前記第1の方向及び前記第2の方向のいずれとも交わる
方向に延在することを特徴とする、請求項1又は2に記載の表示装置。 - 前記第1開口部の直線部分と、前記第2開口部の直線部分とは、互いに平行に延在する部分を有することを特徴とする、請求項3に記載の表示装置。
- 前記表示装置は、第1の基板と、前記第1の基板と対向する第2の基板と、をさらに有し、
前記複数の画素は、それぞれ前記第1の基板上に形成され、
前記第2の基板の前記複数の画素に対応する位置に、カラーフィルタが形成されていることを特徴とする、請求項1乃至4のいずれか一に記載の表示装置。
Priority Applications (2)
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JP2015127297A JP6625835B2 (ja) | 2015-06-25 | 2015-06-25 | 表示装置 |
US15/176,293 US9853095B2 (en) | 2015-06-25 | 2016-06-08 | Display device |
Applications Claiming Priority (1)
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JP2015127297A JP6625835B2 (ja) | 2015-06-25 | 2015-06-25 | 表示装置 |
Publications (3)
Publication Number | Publication Date |
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JP2017009884A JP2017009884A (ja) | 2017-01-12 |
JP2017009884A5 JP2017009884A5 (ja) | 2018-08-02 |
JP6625835B2 true JP6625835B2 (ja) | 2019-12-25 |
Family
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JP2015127297A Active JP6625835B2 (ja) | 2015-06-25 | 2015-06-25 | 表示装置 |
Country Status (2)
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US (1) | US9853095B2 (ja) |
JP (1) | JP6625835B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102562896B1 (ko) * | 2016-03-18 | 2023-08-04 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR20180068549A (ko) * | 2016-12-14 | 2018-06-22 | 엘지디스플레이 주식회사 | 유기발광 표시장치와 그의 제조방법 |
TWI615661B (zh) * | 2017-06-13 | 2018-02-21 | 友達光電股份有限公司 | 顯示面板 |
CN109300936B (zh) * | 2017-07-25 | 2021-04-06 | 上海和辉光电股份有限公司 | 一种显示基板、显示面板及显示装置 |
JP6500945B2 (ja) * | 2017-07-31 | 2019-04-17 | セイコーエプソン株式会社 | 電気光学装置 |
KR102698293B1 (ko) * | 2018-11-27 | 2024-08-23 | 삼성전자주식회사 | 디스플레이 장치 및 제조 방법 |
JP2019117941A (ja) * | 2019-03-19 | 2019-07-18 | セイコーエプソン株式会社 | 電気光学装置 |
TWI699903B (zh) * | 2019-05-17 | 2020-07-21 | 友達光電股份有限公司 | 顯示面板及其製造方法 |
KR20210013493A (ko) * | 2019-07-26 | 2021-02-04 | 삼성디스플레이 주식회사 | 표시 장치 |
CN111223902B (zh) * | 2019-11-29 | 2022-06-17 | 云谷(固安)科技有限公司 | 一种像素结构、掩膜版及显示装置 |
CN112993118B (zh) * | 2020-06-05 | 2023-05-09 | 友达光电股份有限公司 | 显示装置 |
WO2023070328A1 (zh) * | 2021-10-26 | 2023-05-04 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
Family Cites Families (7)
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JP3213242B2 (ja) | 1996-10-23 | 2001-10-02 | シャープ株式会社 | 反射板、反射型液晶表示装置およびその製造方法 |
TWI387800B (zh) | 2004-09-10 | 2013-03-01 | Samsung Display Co Ltd | 顯示裝置 |
JP4655942B2 (ja) * | 2006-01-16 | 2011-03-23 | セイコーエプソン株式会社 | 発光装置、発光装置の製造方法および電子機器 |
WO2011045911A1 (ja) * | 2009-10-15 | 2011-04-21 | パナソニック株式会社 | 表示パネル装置及びその製造方法 |
JP2015072770A (ja) * | 2013-10-02 | 2015-04-16 | 株式会社ジャパンディスプレイ | 有機エレクトロルミネッセンス装置及びその製造方法 |
JP2015090814A (ja) * | 2013-11-06 | 2015-05-11 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102182953B1 (ko) * | 2013-11-26 | 2020-11-25 | 엘지디스플레이 주식회사 | 유기발광표시패널 및 이를 이용한 유기발광표시장치 |
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2015
- 2015-06-25 JP JP2015127297A patent/JP6625835B2/ja active Active
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2016
- 2016-06-08 US US15/176,293 patent/US9853095B2/en active Active
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Publication number | Publication date |
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US20160380037A1 (en) | 2016-12-29 |
JP2017009884A (ja) | 2017-01-12 |
US9853095B2 (en) | 2017-12-26 |
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