JP6622735B2 - ビーム成形構造体を備えた発光素子およびその製造方法 - Google Patents
ビーム成形構造体を備えた発光素子およびその製造方法 Download PDFInfo
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- JP6622735B2 JP6622735B2 JP2017017728A JP2017017728A JP6622735B2 JP 6622735 B2 JP6622735 B2 JP 6622735B2 JP 2017017728 A JP2017017728 A JP 2017017728A JP 2017017728 A JP2017017728 A JP 2017017728A JP 6622735 B2 JP6622735 B2 JP 6622735B2
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- Prior art keywords
- light
- led semiconductor
- light emitting
- photoluminescence
- semiconductor die
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 68
- 239000004065 semiconductor Substances 0.000 claims description 100
- 238000005424 photoluminescence Methods 0.000 claims description 73
- 238000000149 argon plasma sintering Methods 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 39
- 238000007493 shaping process Methods 0.000 claims description 38
- 239000002245 particle Substances 0.000 claims description 37
- 239000006228 supernatant Substances 0.000 claims description 31
- 239000002952 polymeric resin Substances 0.000 claims description 30
- 229920003002 synthetic resin Polymers 0.000 claims description 30
- 230000005540 biological transmission Effects 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 23
- 239000002131 composite material Substances 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 70
- 230000007423 decrease Effects 0.000 description 9
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
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- 229920001187 thermosetting polymer Polymers 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Optical Filters (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105104034 | 2016-02-05 | ||
| TW105104034A TWI583028B (zh) | 2016-02-05 | 2016-02-05 | 具有光形調整結構之發光裝置及其製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019211691A Division JP7016467B2 (ja) | 2016-02-05 | 2019-11-22 | ビーム成形構造体を備えた発光素子およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017175118A JP2017175118A (ja) | 2017-09-28 |
| JP6622735B2 true JP6622735B2 (ja) | 2019-12-18 |
Family
ID=59367327
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017017728A Active JP6622735B2 (ja) | 2016-02-05 | 2017-02-02 | ビーム成形構造体を備えた発光素子およびその製造方法 |
| JP2019211691A Active JP7016467B2 (ja) | 2016-02-05 | 2019-11-22 | ビーム成形構造体を備えた発光素子およびその製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019211691A Active JP7016467B2 (ja) | 2016-02-05 | 2019-11-22 | ビーム成形構造体を備えた発光素子およびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP6622735B2 (ko) |
| KR (2) | KR102210462B1 (ko) |
| TW (1) | TWI583028B (ko) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI658610B (zh) * | 2017-09-08 | 2019-05-01 | Maven Optronics Co., Ltd. | 應用量子點色彩轉換之發光裝置及其製造方法 |
| US10879434B2 (en) | 2017-09-08 | 2020-12-29 | Maven Optronics Co., Ltd. | Quantum dot-based color-converted light emitting device and method for manufacturing the same |
| EP3905349B1 (en) * | 2018-12-27 | 2024-02-07 | Denka Company Limited | Light-emitting substrate, and lighting device |
| WO2020137764A1 (ja) | 2018-12-27 | 2020-07-02 | デンカ株式会社 | 蛍光体基板、発光基板及び照明装置 |
| US20220059730A1 (en) * | 2018-12-27 | 2022-02-24 | Denka Company Limited | Phosphor substrate, light emitting substrate, and lighting device |
| KR20210106433A (ko) | 2018-12-27 | 2021-08-30 | 덴카 주식회사 | 형광체 기판, 발광 기판 및 조명 장치 |
| KR102363199B1 (ko) * | 2019-05-10 | 2022-02-15 | 덕산하이메탈(주) | 복합 굴절율 도막 조성물 및 이를 이용한 도막 |
| JP7539296B2 (ja) | 2020-10-21 | 2024-08-23 | シャープ福山レーザー株式会社 | 半導体モジュール |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7005679B2 (en) * | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
| JP2006310568A (ja) | 2005-04-28 | 2006-11-09 | Toyoda Gosei Co Ltd | 発光装置 |
| US7791093B2 (en) * | 2007-09-04 | 2010-09-07 | Koninklijke Philips Electronics N.V. | LED with particles in encapsulant for increased light extraction and non-yellow off-state color |
| RU2489774C2 (ru) * | 2007-11-29 | 2013-08-10 | Нития Корпорейшн | Светоизлучающее устройство и способ его изготовления |
| KR20110066202A (ko) * | 2008-10-01 | 2011-06-16 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 증가된 광 추출 및 황색이 아닌 오프 상태 컬러를 위한 인캡슐런트 내의 입자들을 갖는 ｌｅｄ |
| EP3547380B1 (en) * | 2010-02-09 | 2023-12-20 | Nichia Corporation | Light emitting device |
| JP5566785B2 (ja) | 2010-06-22 | 2014-08-06 | 日東電工株式会社 | 複合シート |
| JP2012094578A (ja) * | 2010-10-25 | 2012-05-17 | Citizen Holdings Co Ltd | 半導体発光装置の製造方法 |
| KR20120061376A (ko) * | 2010-12-03 | 2012-06-13 | 삼성엘이디 주식회사 | 반도체 발광 소자에 형광체를 도포하는 방법 |
| CN103299441B (zh) * | 2011-01-20 | 2016-08-10 | 夏普株式会社 | 发光装置、照明装置、显示装置以及发光装置的制造方法 |
| JP2012174941A (ja) | 2011-02-22 | 2012-09-10 | Panasonic Corp | 発光装置 |
| JP5730680B2 (ja) * | 2011-06-17 | 2015-06-10 | シチズン電子株式会社 | Ｌｅｄ発光装置とその製造方法 |
| CN103650179A (zh) * | 2011-07-19 | 2014-03-19 | 松下电器产业株式会社 | 发光装置及该发光装置的制造方法 |
| DE102011116752A1 (de) * | 2011-10-24 | 2013-04-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Streumittel |
| JP2013118235A (ja) * | 2011-12-02 | 2013-06-13 | Hitachi Appliances Inc | 照明装置 |
| DE102012200973A1 (de) | 2012-01-24 | 2013-07-25 | Osram Opto Semiconductors Gmbh | Leuchte und verfahren zur herstellung einer leuchte |
| WO2013137356A1 (ja) * | 2012-03-13 | 2013-09-19 | シチズンホールディングス株式会社 | 半導体発光装置及びその製造方法 |
| US9773950B2 (en) * | 2012-04-06 | 2017-09-26 | Ctlab Co. Ltd. | Semiconductor device structure |
| JP5976406B2 (ja) * | 2012-06-11 | 2016-08-23 | シチズンホールディングス株式会社 | 半導体発光装置 |
| KR101997243B1 (ko) * | 2012-09-13 | 2019-07-08 | 엘지이노텍 주식회사 | 발광 소자 및 조명 시스템 |
| US20140191263A1 (en) * | 2013-01-07 | 2014-07-10 | Sabic Innovative Plastics Ip B.V. | Compositions for an led reflector and articles thereof |
| TW201431124A (zh) * | 2013-01-22 | 2014-08-01 | 矽品精密工業股份有限公司 | 發光二極體封裝件及其製法 |
| JP6071661B2 (ja) * | 2013-03-11 | 2017-02-01 | 株式会社東芝 | 半導体発光装置 |
| JP2015038960A (ja) * | 2013-05-16 | 2015-02-26 | 株式会社日本セラテック | 発光装置 |
| TWI707484B (zh) | 2013-11-14 | 2020-10-11 | 晶元光電股份有限公司 | 發光裝置 |
| TW201616689A (zh) * | 2014-06-25 | 2016-05-01 | 皇家飛利浦有限公司 | 經封裝之波長轉換發光裝置 |
| CN105161609B (zh) * | 2015-09-24 | 2018-06-12 | 广东晶科电子股份有限公司 | 一种芯片级led光源模组及其制作方法 |
-
2016
- 2016-02-05 TW TW105104034A patent/TWI583028B/zh active
-
2017
- 2017-02-02 JP JP2017017728A patent/JP6622735B2/ja active Active
- 2017-02-03 KR KR1020170015622A patent/KR102210462B1/ko active IP Right Grant
-
2018
- 2018-12-03 KR KR1020180153435A patent/KR20180132018A/ko active Application Filing
-
2019
- 2019-11-22 JP JP2019211691A patent/JP7016467B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201729436A (zh) | 2017-08-16 |
| JP7016467B2 (ja) | 2022-02-07 |
| JP2017175118A (ja) | 2017-09-28 |
| TWI583028B (zh) | 2017-05-11 |
| JP2020053690A (ja) | 2020-04-02 |
| KR102210462B1 (ko) | 2021-02-02 |
| KR20170093735A (ko) | 2017-08-16 |
| KR20180132018A (ko) | 2018-12-11 |
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