TWI583028B - 具有光形調整結構之發光裝置及其製造方法 - Google Patents

具有光形調整結構之發光裝置及其製造方法 Download PDF

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Publication number
TWI583028B
TWI583028B TW105104034A TW105104034A TWI583028B TW I583028 B TWI583028 B TW I583028B TW 105104034 A TW105104034 A TW 105104034A TW 105104034 A TW105104034 A TW 105104034A TW I583028 B TWI583028 B TW I583028B
Authority
TW
Taiwan
Prior art keywords
light
structures
emitting device
scattering
forming
Prior art date
Application number
TW105104034A
Other languages
English (en)
Chinese (zh)
Other versions
TW201729436A (zh
Inventor
傑 陳
王琮璽
Original Assignee
行家光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 行家光電股份有限公司 filed Critical 行家光電股份有限公司
Priority to TW105104034A priority Critical patent/TWI583028B/zh
Priority to JP2017017728A priority patent/JP6622735B2/ja
Priority to US15/423,513 priority patent/US10797209B2/en
Priority to EP20173969.5A priority patent/EP3734675A1/en
Priority to KR1020170015622A priority patent/KR102210462B1/ko
Priority to EP17154536.1A priority patent/EP3203534B1/en
Application granted granted Critical
Publication of TWI583028B publication Critical patent/TWI583028B/zh
Publication of TW201729436A publication Critical patent/TW201729436A/zh
Priority to KR1020180153435A priority patent/KR20180132018A/ko
Priority to JP2019211691A priority patent/JP7016467B2/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Optical Filters (AREA)
TW105104034A 2016-02-05 2016-02-05 具有光形調整結構之發光裝置及其製造方法 TWI583028B (zh)

Priority Applications (8)

Application Number Priority Date Filing Date Title
TW105104034A TWI583028B (zh) 2016-02-05 2016-02-05 具有光形調整結構之發光裝置及其製造方法
JP2017017728A JP6622735B2 (ja) 2016-02-05 2017-02-02 ビーム成形構造体を備えた発光素子およびその製造方法
US15/423,513 US10797209B2 (en) 2016-02-05 2017-02-02 Light emitting device with beam shaping structure and manufacturing method of the same
EP20173969.5A EP3734675A1 (en) 2016-02-05 2017-02-03 Light emitting device with beam shaping structure and manufacturing method of the same
KR1020170015622A KR102210462B1 (ko) 2016-02-05 2017-02-03 빔 성형 구조를 가진 발광 디바이스 및 그 제조 방법
EP17154536.1A EP3203534B1 (en) 2016-02-05 2017-02-03 Light emitting device with beam shaping structure and manufacturing method of the same
KR1020180153435A KR20180132018A (ko) 2016-02-05 2018-12-03 빔 성형 구조를 가진 발광 디바이스 및 그 제조 방법
JP2019211691A JP7016467B2 (ja) 2016-02-05 2019-11-22 ビーム成形構造体を備えた発光素子およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW105104034A TWI583028B (zh) 2016-02-05 2016-02-05 具有光形調整結構之發光裝置及其製造方法

Publications (2)

Publication Number Publication Date
TWI583028B true TWI583028B (zh) 2017-05-11
TW201729436A TW201729436A (zh) 2017-08-16

Family

ID=59367327

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105104034A TWI583028B (zh) 2016-02-05 2016-02-05 具有光形調整結構之發光裝置及其製造方法

Country Status (3)

Country Link
JP (2) JP6622735B2 (ko)
KR (2) KR102210462B1 (ko)
TW (1) TWI583028B (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10879434B2 (en) 2017-09-08 2020-12-29 Maven Optronics Co., Ltd. Quantum dot-based color-converted light emitting device and method for manufacturing the same
TWI658610B (zh) * 2017-09-08 2019-05-01 Maven Optronics Co., Ltd. 應用量子點色彩轉換之發光裝置及其製造方法
US12068438B2 (en) 2018-12-27 2024-08-20 Denka Company Limited Phosphor substrate, light emitting substrate, and lighting device
KR20210105894A (ko) 2018-12-27 2021-08-27 덴카 주식회사 형광체 기판, 발광 기판 및 조명 장치
US20220059730A1 (en) * 2018-12-27 2022-02-24 Denka Company Limited Phosphor substrate, light emitting substrate, and lighting device
WO2020137761A1 (ja) * 2018-12-27 2020-07-02 デンカ株式会社 蛍光体基板、発光基板及び照明装置
KR102363199B1 (ko) * 2019-05-10 2022-02-15 덕산하이메탈(주) 복합 굴절율 도막 조성물 및 이를 이용한 도막

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200505054A (en) * 2003-05-01 2005-02-01 Cree Inc Multiple component solid state white light
TW201342669A (zh) * 2011-12-02 2013-10-16 Hitachi Appliances Inc 照明裝置
TW201431124A (zh) * 2013-01-22 2014-08-01 矽品精密工業股份有限公司 發光二極體封裝件及其製法
TW201501367A (zh) * 2013-05-16 2015-01-01 Nihon Ceratec Co Ltd 發光裝置
CN105161609A (zh) * 2015-09-24 2015-12-16 晶科电子（广州）有限公司 一种芯片级led光源模组及其制作方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006310568A (ja) * 2005-04-28 2006-11-09 Toyoda Gosei Co Ltd 発光装置
US7791093B2 (en) * 2007-09-04 2010-09-07 Koninklijke Philips Electronics N.V. LED with particles in encapsulant for increased light extraction and non-yellow off-state color
JP5526782B2 (ja) * 2007-11-29 2014-06-18 日亜化学工業株式会社 発光装置及びその製造方法
CN102171844A (zh) * 2008-10-01 2011-08-31 皇家飞利浦电子股份有限公司 用于增大的光提取和非黄色的断开状态颜色的在封装剂中具有颗粒的led
EP2535954B1 (en) * 2010-02-09 2019-06-12 Nichia Corporation Light emitting device
JP5566785B2 (ja) * 2010-06-22 2014-08-06 日東電工株式会社 複合シート
JP2012094578A (ja) * 2010-10-25 2012-05-17 Citizen Holdings Co Ltd 半導体発光装置の製造方法
KR20120061376A (ko) * 2010-12-03 2012-06-13 삼성엘이디 주식회사 반도체 발광 소자에 형광체를 도포하는 방법
US9144118B2 (en) * 2011-01-20 2015-09-22 Sharp Kabushiki Kaisha Light-emitting device, lighting device, display device, and method for manufacturing light-emitting device
JP2012174941A (ja) * 2011-02-22 2012-09-10 Panasonic Corp 発光装置
JP5730680B2 (ja) * 2011-06-17 2015-06-10 シチズン電子株式会社 Ｌｅｄ発光装置とその製造方法
WO2013011628A1 (ja) * 2011-07-19 2013-01-24 パナソニック株式会社 発光装置及びその製造方法
DE102011116752A1 (de) * 2011-10-24 2013-04-25 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Streumittel
DE102012200973A1 (de) * 2012-01-24 2013-07-25 Osram Opto Semiconductors Gmbh Leuchte und verfahren zur herstellung einer leuchte
JP6008940B2 (ja) * 2012-03-13 2016-10-19 シチズンホールディングス株式会社 半導体発光装置及びその製造方法
WO2013151387A1 (ko) * 2012-04-06 2013-10-10 주식회사 씨티랩 반도체 소자 구조물을 제조하는 방법
JP5976406B2 (ja) * 2012-06-11 2016-08-23 シチズンホールディングス株式会社 半導体発光装置
KR101997243B1 (ko) * 2012-09-13 2019-07-08 엘지이노텍 주식회사 발광 소자 및 조명 시스템
US20140191263A1 (en) * 2013-01-07 2014-07-10 Sabic Innovative Plastics Ip B.V. Compositions for an led reflector and articles thereof
JP6071661B2 (ja) * 2013-03-11 2017-02-01 株式会社東芝 半導体発光装置
TWI707484B (zh) * 2013-11-14 2020-10-11 晶元光電股份有限公司 發光裝置
TW201616689A (zh) * 2014-06-25 2016-05-01 皇家飛利浦有限公司 經封裝之波長轉換發光裝置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200505054A (en) * 2003-05-01 2005-02-01 Cree Inc Multiple component solid state white light
TW201342669A (zh) * 2011-12-02 2013-10-16 Hitachi Appliances Inc 照明裝置
TW201431124A (zh) * 2013-01-22 2014-08-01 矽品精密工業股份有限公司 發光二極體封裝件及其製法
TW201501367A (zh) * 2013-05-16 2015-01-01 Nihon Ceratec Co Ltd 發光裝置
CN105161609A (zh) * 2015-09-24 2015-12-16 晶科电子（广州）有限公司 一种芯片级led光源模组及其制作方法

Also Published As

Publication number Publication date
TW201729436A (zh) 2017-08-16
JP7016467B2 (ja) 2022-02-07
KR102210462B1 (ko) 2021-02-02
KR20170093735A (ko) 2017-08-16
KR20180132018A (ko) 2018-12-11
JP2017175118A (ja) 2017-09-28
JP2020053690A (ja) 2020-04-02
JP6622735B2 (ja) 2019-12-18

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